MC14510BCP ,BCD Up/Down CounterMaximum Ratings are those values beyond which damage to the may occur.†Temperature Derating: This d ..
MC14511B ,BCD/7 Segment LAT/Decoder/DriverMAXIMUM RATINGS (Voltages Referenced to V ) (Note 2)SSYY, Y = YearSymbol Parameter Value Unit WW, W ..
MC14511BCL ,BCD-To-Seven Segment Latch/Decoder/DriverELECTRICAL CHARACTERISTICS (Voltages Referenced to V )SSÎÎÎÎÎΖ 55* C 25* C 125* CV VD DD DVdc VdcC ..
MC14511BCL ,BCD-To-Seven Segment Latch/Decoder/DriverELECTRICAL CHARACTERISTICS (Voltages Referenced to V )SSÎÎÎÎÎΖ 55* C 25* C 125* CV VD DD DVdc VdcC ..
MC14511BCP ,BCD-To-Seven Segment Latch/Decoder/DriverMAXIMUM RATINGS* (Voltages Referenced to V )SSD 6 11 cRating Symbol Value UnitA 7 10 dDC Supply Vol ..
MC14511BD ,BCD-To-Seven Segment Latch/Decoder/Driver3MC14511BÎÎÎÎÎ SWITCHING CHARACTERISTICS (Note 8) (C = 50 pF, T = 25C)L AÎÎÎÎÎ VDDCharacteristic S ..
MC68HC711E9CFS2 ,Microcontroller, 2 MHz, RAM=512, ROM=0, EPROM=12K, EEPROM=512M68HC11E FamilyTechnical DataM68HC11MicrocontrollersM68HC11E/DRev. 4, 7/2002WWW.MOTOROLA.COM/SEMICO ..
MC68HC711E9CFS2 ,Microcontroller, 2 MHz, RAM=512, ROM=0, EPROM=12K, EEPROM=512M68HC11E FamilyTechnical DataM68HC11MicrocontrollersM68HC11E/DRev. 4, 7/2002WWW.MOTOROLA.COM/SEMICO ..
MC68HC711E9MFN2 ,Microcontroller, 2 MHz, RAM=512, ROM=0, EPROM=12K, EEPROM=512M68HC11E FamilyTechnical DataM68HC11MicrocontrollersM68HC11E/DRev. 4, 7/2002WWW.MOTOROLA.COM/SEMICO ..
MC68HC711E9MFN2 ,Microcontroller, 2 MHz, RAM=512, ROM=0, EPROM=12K, EEPROM=512M68HC11E FamilyTechnical DataM68HC11MicrocontrollersM68HC11E/DRev. 4, 7/2002WWW.MOTOROLA.COM/SEMICO ..
MC68HC711E9VFN2 ,Microcontroller, 2 MHz, RAM=512, ROM=0, EPROM=12K, EEPROM=512M68HC11E FamilyTechnical DataM68HC11MicrocontrollersM68HC11E/DRev. 4, 7/2002WWW.MOTOROLA.COM/SEMICO ..
MC68HC711E9VFN2 ,Microcontroller, 2 MHz, RAM=512, ROM=0, EPROM=12K, EEPROM=512M68HC11E FamilyTechnical DataM68HC11MicrocontrollersM68HC11E/DRev. 4, 7/2002WWW.MOTOROLA.COM/SEMICO ..
MC14510BCL-MC14510BCP
BCD Up/Down Counter
-The MC14510B synchronous up/down BCD counter is constructed with
MOS P–channel and N–channel enhancement mode devices in a monolithic
structure. The counter consists of type D flip–flop stages with a gating
structure to provide type T flip–flop capability.
This counter can be preset by applying the desired value in BCD to the
Preset inputs (P1, P2, P3, P4) and then bringing the Preset Enable (PE)
high. The direction of counting is controlled by applying a high (for up
counting) or a low (for down counting) to the UP/DOWN input. The state of
the counter changes on the positive transition of the clock input.
Cascading can be accomplished by connecting the Carry Out to the
Carry In of the next stage while clocking each counter in parallel. The
outputs (Q1, Q2, Q3, Q4) can be reset to a low state by applying a high to the
Reset (R) pin.
This CMOS counter finds primary use in up/down and difference counting.
Other applications include: (1) Frequency synthesizer applications where
low power dissipation and/or high noise immunity is desired, (2) Analog–to–
digital and digital–to–analog conversions, and (3) Magnitude and sign
generation. Diode Protection on All Inputs Supply Voltage Range = 3.0 Vdc to 18 Vdc Internally Synchronous for High Speed Logic Edge–Clocked Design — Count Occurs on Positive Going Edge
of Clock Asynchronous Preset Enable Operation Capable of Driving Two Low–power TTL Loads or One Low–power
Schottky TTL Load Over the Rated Temperature Range.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Maximum Ratings are those values beyond which damage to the may occur.
†Temperature Derating:
Plastic “P and D/DW” Packages: – 7.0 mW/ C From 65 C To 125C
Ceramic “L” Packages: – 12 mW/ C From 100 C To 125C
TRUTH TABLEX = Don’t Care
NOTE: When counting up, the Carry Out signal is normally high, and is low only
when Q1 and Q4 are high and Carry In is low. When counting down, Carry
SEMICONDUCTOR TECHNICAL DATA
