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MBRS360TR
60V 3A Schottky Discrete Diode in a SMC package
International
ISZR lecti
Bulletin PD-20586 rev.C 03/03
MBRS360TR
SCHOTTKY RECTIFIER
Major Ratings and Characteristics
Characteristics MBRS360TR Units
|F(AV) Rectangular 3.0 A
waveform
VRRM 60 V
|FSM @tp=5ps sine 790 A
VF @3.0Apk,TJ=125°C 0.61 V
T: range - 55 to150 °C
Description/Features
The MBRS360TR surface-mount Schottky rectifier has been
designed forapplications requiring Iowforward drop and small
foot prints on PC boards. Typical applications are in disk
drives, switching power supplies, converters, free-wheeling
diodes, battery charging, and reverse battery protection.
. Small foot print, surface mountable
. Very low forward voltage drop
. High frequency operation
. Guard ring for enhanced ruggedness and long term
reliability
2.75 (.108)
3.15 (.124)
Device Marking: IR36
5.59 (.220)
6.22 (.245)
CATHODE ANODE
6.60 (.260)
7.11 (.280)
2.00 (.079)
2.62 (.103)
0.76 (.030)
1.52 (.060) 7.75
(.305)
(.320)
Outline SMC
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to Application Note # AN-994
.152 (.006)
.305 (.012)
CD Ci)
Ci) POLARITY Ci) PART NUMBER
.102 (.004)
.203 (.008)
MBRS360TR International
Bulletin PD-20586 rev.C 03/03 IEER Rectifier
Voltage Ratings
Part number MBRS360TR
VR Max. DC Reverse Voltage (V) 60
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters Value Units Conditions
IHAV) Max.Average Forward Current 3.0 A 50% duty cyc|e@TL=118°C,rectangular waveform
4.0 50% duty cycle@TL=105°C,rectangular waveform
IFSM Max.PeakOneCycleNon-Repetitive 790 A 5ps Sineor3ps Rect.pulse Following any rated
load condition and
SurgeCurrent 80 10ms Sine or6ms Rect. pulse with rated VRRM applied
EAS Non RepetitiveAvalanche Energy 5.0 mJ To=25''C,lAs=r0A, L=10mH
la, RepetitiveAvalancheCurrent 1.0 A Currentdecayinglinearlytozeroin1psec
Frequency limited by T, max. Va = 1.5 er typical
Electrical Specifications
Parameters Typ Max Units Conditions
Vo, Max. Forward Voltage Drop (1) 0.57 0.74 V @ 3A T = 25 "C
0.72 0.9 v © 6A J
0.51 0.61 V @ 3A
0.62 0.77 v @ 6A T4 = 125 DC
IRM Max. Reverse Leakage (1) - 0.5 mA T: = 25 "C
Current - 20 mA T J = 100°C VR = rated VR
- 30 mA T J = 125 'C
c, Max. Junction Capacitance - 180 pF VR-- 5Vroc(testsignal range 100KHzto 1Mhz) 25''C
LS Typical Series Inductance - 3.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change - 10000 V/ps (Rated VR)
(1) Pulse 1/Nhdth < 300ps, Duty Cycle < 2%
ThermaI-Mechanical Specifications
Parameters Value Units Conditions
T J Max.JunctionTemperature Range(*) -5510150 "C
Tstg Max.StorageTemperature Range -55to150 "C
RmJL Max.Thermal Resistance 12 "CAN DCoperation
Junction to Lead (**)
Rm.IA Max.ThermaI Resistance 46 “CM DCoperation
Junction to Ambient
wt Approximate Weight 0.24(0.008) g(oz.)
Case Style SMC Similar to DO-214AB
Device Marking IR36
C) dP_tot < 1 thermal runaway condition fora diode on its own heatsink
dT] Rth(j-a)
C') Mounted 1 inch square PCB
2
