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MBRS340TR
40V 3A Schottky Discrete Diode in a SMC package
International
IEER Rectifier
Bulletin PD-20585 rev.D 03/03
MBRS340TR
SCHOTTKY RECTIFIER
Major Ratings and Characteristics
Description/ Features
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to Application Note # AN-994
. . . The MBRS340TR surface-mount Schottky rectifer has been
Characteristics Value Units designed forapplications requiring Iowforward drop and small
foot prints on PC boards. Typical applications are in disk
IHAV) Rectangular 3.0 A drives, switching power supplies, converters, free-wheeling
waveform diodes, battery charging, and reverse battery protection.
VRRM 40 V . Small foot print, surface mountable
. Very low forward voltage drop
|FSM @tp=5ps sine 1580 A . High frequency operation
. Guard ring for enhanced ruggedness and long term
VF @3.0Apk,TJ=125°C 0.43 V reliability
T., range - 55 to150 ''C
Device Marking: IR34
2.75 (.108) 5.59 (.220)
3-15 (.124) 6.22 (.245) CATHODE ANODE
6.60 (.260)
7.11 (.280) (D Ci)
.152 (.006)
-ar" .305 (.012)
2.00 (.079) Ci) POLARITY Ci) PART NUMBER
2.62 .103 k
( l, H J 102( 004)
0.76 (.030) . .
.203 (.008)
1.52 (.060) 7.75 (.305)
8.13 (.320)
Outline SMC
MBRS340TR International
Bulletin PD-20585 rev.D 03/03 IEZR Rectifier
Voltage Ratings
Part number MBRS340TR
VR Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters Value Units Conditions
Imv) Max.Average Forward Current 3.0 A 50%duty cycle@TL=118°C,rectangular waveform
4.0 50% duty cycle@ TL=110 ''C, rectangular waveform
|FSM Max.PeakOneCycIeNon-Repetitive 1580 A 5ps Sine or3ps Rect. pulse Following any rated
load condition and
SurgeCurrent 80 10msSineor6ms Rect. pulse with rated VRRMapplied
EAs Non RepetitiveAvalanche Energy 6 tttl T J=25°C,l AS=1.0A,L=12mH
I AR Repetitive Avalanche Current 1.0 A Current decaying linearlytozeroin1 psec
Frequencylimited by T, max.Va =1.5er typical
Electrical Specifications
Parameters Value Units Conditions
V Ma . Forward Volta e Dre 1 0.525 V 3A
FM x g p ( ) @ T, = 25 ''C
0.68 V @ 6A
0.43 V @ 3A
0.57 v @6A T, =125 C
Ira, Max. Reverse Leakage (1) 2.0 mA TJ = 25 "C
Current 20 mA T J = 100''C VR = rated VR
35 mA T J = 125 "C
c, Max. Junction Capacitance 230 pF VR-- 5VDC(test signal range 100KHz to 1Mhz) 25°C
Ls Typical Series Inductance 3.0 nH Measuredlead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/ps (Rated VR)
(1) Pulse \Mdth < 300ps, Duty Cycle < 2%
ThermaI-Mechanical Specifications
Parameters Value Units Conditions
T, Max.JunctionTemperatureRange (*) -55 to150 (
Tstg Max.StorageTemperature Range -55 to150 ''C
RthJL Max.Thermal Resistance 12 °C/W DCoperation
Junction to Lead (**)
Rm,, Max.ThermaI Resistance 46 “CM DCoperation
Junction to Ambient
wt Approximate Weight 0.24(0.008) g(oz.)
Case Style SMC SimilartoDO-214AB
Device Marking IR34
(') dPtot < 1
dT] Rth(j-a)
(") Mounted 1 inch square PCB
thermal runaway condition for a diode on its own heatsink
