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MBRS140TR
40V 1A Schottky Discrete Diode in a SMB package
Bulletin PD-20591 rev.C 03/03
International
I523 Rectifier MBRS140TR
SCHOTTKY RECTIFIER 1 Amp
Major Ratings and Characteristics Description/ Features
designed for applications requmng Iowforward drop and very small
foot prints on PC boards. Typical applications are in disk drives,
|F(AV) Rectangularwaveform 1.0 A switching power supplies, converters, free-wheeling diodes,
battery charging, and reverse battery protection.
VRRM 40 V . Small foot print, surface mountable
. Low forward voltage drop
IFSM @tp=5ps sme 380 A . High frequency operation
. Guard ring for enhanced ruggedness and long term
VF @1.0Apk, TJ=125°C 0.53 V reliability
TJ range -55 to 150 "C
Device Marking: IR14 CATHODE ANODE
Cr-lil-Cy
0 (.150) [ Ci) Ci) J
0 (.130)
2.15 (.085)
1.80 (.071)
1 4.70 (A85) Li) POLARITY Ci) PART NUMBER
4.10 (.161)
2.5 TYP. SOLDERING PAD
-qr" (.098 TYP.)
2.40 (.094) I
1.90 (.075) -q
AL [I]
0.30 (.012) J;
120 (051 0.15 (.006) 2.0 TYP. -ol L7
0769030) 5.60(.220) (.079TYP.) 4.2 165
5.00(.197) .2(. )
4.0 (.157)
Outline SMB
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994
1
MBRS14OTR International
Bulletin PD-20591 rev.C 03/03 IDR Rectifier
Voltage Ratings
Part number MBRS14OTR
v,, Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters Value Units Conditions
IHAV) Max.Average Forward Current 1.0 A 50% duty cyc|e@TL=119°C,rectangular waveform
IFSM MaxPeakOneCydeNon-Repetitive 380 A Sus Sine orsps Rect. pulse Following any rated
load condition and
Surge Current 40 10ms Sine or ems Rect. pulse with rated VRRM applied
EAS Non-Repetitive Avalanche Energy 3.0 mJ TJ=25°C,IAS=1A,L=6mH
|AR Repetitive Avalanche Current 1.0 A Current decaying linearlytozeroin1 psec
Frequencylimited by T, max.Va=1.5xVr typical
Electrical Specifications
Parameters Typ. Max Units Conditions
VFM Max. Forward Voltage Drop (1) 0.52 0.6 V @ IA
0.70 0.77 v @ 2A T, - 25 C
0.48 0.53 V @ 1A
0.63 0.71 v © 2A T, - 125 C
|RM Max. Reverse Leakage Current (1) - 0.1 mA T, = 25''C
VR = rated v,,
- 4.0 mA T, = 125''C
c, Max. Junction Capacitance - 80 pF VR = 5VDc(test signal range 100KHz to 1Mhz)25°C
LS Typical Series Inductance - 2.0 nH Measured lead tolead 5mm from package body
dv/dt Max. Voltage Rate of Change - 10000 V/ps
(Rated VR)
(1) Pulse deth < 300ps, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters Value Units Conditions
T: Max. Junction Temperature Range(*) -55to150 "C
Tstg Max.Storage Temperature Range -55to150 T
Rtrur. Max.Thermal Resistance 36 "CAN DC operation(See Fig.4)
Junction to Lead (H)
RthJA Max.Thermal Resistance 80 "CAN DC operation
Junction to Ambient
wt Approximate Weight 0.10(0.003) g(oz.)
Case Style SMB Similarto DO-214AA
Device Marking IR14
(*) dPtot < 1
de Rth(j-a)
(**) Mounted 1 inch square PCB
thermal runaway condition for a diode on its own heatsink
