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MBRS130TRPBFIRN/a6000avaiSCHOTTKY RECTIFIER


MBRS130TRPBF ,SCHOTTKY RECTIFIERapplications are in diskI Rectangular 1.0 AF(AV)drives, switching power supplies, converters, free- ..
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MBRS130TRPBF
SCHOTTKY RECTIFIER
Bulletin PD-20436 07/04
International
IezR Rectifier MBRS130TRPbF
SCHOTTKY RECTIFIER 1 Amp
|F(AV) = 1.0Amp
VR = 30V
Major Ratings and Characteristics Description! Features
Characteristics Value Units The MBRS130TRPbF surface-mount Schottky rectifier has
been designed for applications requiring low forward drop and
small foot prints on PC boards. Typical applications are in disk
|F(AV) Rectafngular 1.0 A drives, switching power supplies, converters, free-wheeling
wave orm diodes, battery charging, and reverse battery protection.
VRRM 30 V . Small foot print, surface mountable
. . Very low forward voltage drop
lFSM @tp=5us sme 230 A
. High frequency operation
. Guard ring for enhanced ruggedness and long term
VF @1.0Apk,To=12s'c 0.42 V reliability
. Lad-Free (PbF" sumx)
T: range - 55to 125 "C
Case Styles
MBRS130TRPbF
Cathode o-Mt-o Anode
1
MBRS130TRPbF International
Bulletin PD-20436 07104 TOR Rectifier
Voltage Ratings
Part number MBRS130TRPbF
VR Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters Value Units Conditions
IHAV) Max.Average Forward Current 1.0 A 50% duty cycle@TL= 147 ''C,rectangular waveform
IFSM Max.PeakOneCycle Non-Repetitive 870 A Sps Sine or 3ps Rect. pulse Following any rated
load condition and
Surge Current, T., = 25°C 50 10ms Sine or 6ms Rect. pulse with rated VRRM applied
EAS Non- Repetitive Avalanche Energy 3.0 mJ TJ =25 °C,IAS=1A.L= 6mH
I AR Repetitive Avalanche Current 1.0 A Current decaying linearlytozeroin1 psec
Frequencylimited by T, max. Va =1.5xVrtypical
Electrical Specifications
Parameters Value Units Conditions
Vo, Max. Forward Voltage Drop (1) 0.6 V @ IA TJ = 25 ''C
0.67 V @ 2A
0.42 V @ IA T = 125°C
0.52 v @ 2A J
IRS, Max. Reverse Leakage Current (1) 0.5 mA T: = 25 °C
5.0 mA Tu = 100 ''C v,, = rated VR
15 mA T J = 125 ''C
c, Max. Junction Capacitance 200 pF VR = 5VDC (test signal range 100KHz to 1Mhz) 25°C
LS Typical Series Inductance 2.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/ps
(Rated VR)
(1) Pulse 1Mdth < 300ps, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters Value Units Conditions
T J Max.JunctionTemperature Range (*) -5510125 ''C
Tstg Max.StorageTemperature Range -55to150 "C
L Max.Thermal Resistance 25 "CAN DCoperation
Junction to Lead (**)
RWA Max.ThermaI Resistance 80 ''C/W DC operation
Junction to Ambient
wt Approximate Weight O.10(0.003) g(oz.)
Case Style SMB Similarto DO-214AA
Device Marking IR13
C) dP_tot < 1 thermal runaway condition foradiode onits own heatsink
dT] Rth (j-a)
(**) Mounted 1 inch square PCB
2
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