MBRS1100 ,Schottky Power Rectifier(Surface Mount Power Package)ELECTRICAL CHARACTERISTICSMaximum Instantaneous Forward Voltage (Note 1) (i = 1.0 A, T = 25°C) V 0. ..
MBRS1100T3 ,Schottky RectifierMAXIMUM RATINGSRating Symbol Value UnitPeak Repetitive Reverse Voltage V 100 VoltsRRMWorking Peak R ..
MBRS120 ,20V 1A Schottky Discrete Diode in a SMB packagecontact. Ideally suited for low voltage, high frequency rectification, oras free wheeling and polar ..
MBRS120T3 ,Schottky RectifierMAXIMUM RATINGSB12 = Device CodeRating Symbol Value UnitPeak Repetitive Reverse Voltage V 20 VRRMWo ..
MBRS120TR ,20V 1A Schottky Discrete Diode in a SMB packageapplications are in diskI Rectangular 1.0 AF(AV)drives, switching power supplies, converters, free- ..
MBRS130 ,30V/1.0A/VF = 0.6V Schottky Barrier RectifierTHERMAL CHARACTERISTICSCharacteristic Symbol Value UnitThermal Resistance — Junction to Lead R 12 ° ..
MC1723CL ,V(out): 2-37Vdc; I(out): 150mA; silicon voltage regulatorThermal CharacteristicsMastic PackageTA = +25%Derate above TA = +25°CThermal Resistance, Junction t ..
MC1723CP ,Voltage RegulatorThermal CharacteristicsT = +25°C P 1.25 WA DDerate above T = +25°C 1/θ 10 mW/°CA JAThermal Resistan ..
MC1723G ,V(out): 2-37Vdc; I(out): 150mA; silicon voltage regulatorMOTOROLA SC {TELECOH}ORDERING INFORMATIONDavie. Alumni Tempentura Ringo PackageMC1723CO 0°C to +70“ ..
MC1723L ,V(out): 2-37Vdc; I(out): 150mA; silicon voltage regulatorThermal CharacteristicsMastic PackageTA = +25%Derate above TA = +25°CThermal Resistance, Junction t ..
MC1741CD ,Internally Compensated, High Performance Operationa AmplifierOrder this document by MC1741C/D** * ** OPERATIONAL** AMPLIFIERThe MC1741C was designed for use as ..
MC1741CDR2 ,Internally Compensated, High Performance Operational Amplifier3e , OUTPUT NOISE (mVrms) e ,INPUT NOISE ( μ Vpk)n n, INPUT NOISE (nV/√Hz) e ,INPUT NOISE ( μ Vpk)e ..
MBRS1100-MBRS190T3
1A 90V Schottky Rectifier
MBRS1100T3, MBRS190T3
Preferred DevicesSchottky Power Rectifier
Surface Mount Power PackageSchottky Power Rectifiers employ the use of the Schottky Barrier
principle in a large area metal-to-silicon power diode. State-of-the-art
geometry features epitaxial construction with oxide passivation and
metal overlay contact. Ideally suited for low voltage, high frequency
rectification, or as free wheeling and polarity protection diodes, in
surface mount applications where compact size and weight are critical
to the system. These state-of-the-art devices have the following
features:
Features Pb−Free Packages are Available Small Compact Surface Mountable Package with J-Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction High Blocking Voltage − 100 Volts 150°C Operating Junction Temperature Guardring for Stress Protection
Mechanical Characteristics Case: Epoxy, Molded Weight: 95 mg (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds Shipped in 12 mm Tape and Reel, 2500 units per reel Cathode Polarity Band
MAXIMUM RATINGSMaximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
