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MBR4060WTIRFN/a43avai60V 40A Schottky Discrete Diode in a TO-247AC package


MBR4060WT ,60V 40A Schottky Discrete Diode in a TO-247AC packageFeaturesMajor Ratings and CharacteristicsThe MBR... center tap Schottky rectifier has been optimize ..
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MBR4060WT
60V 40A Schottky Discrete Diode in a TO-247AC package
FeaturesMajor Ratings and CharacteristicsThe MBR... center tap Schottky rectifier has been optimizedfor very low forward voltage drop, with moderate leakage.Characteristics Values UnitsThe proprietary barrier technology allows for reliableoperation up to 150° C junction temperature. Typical applica-I Rectangular 40 AF(AV)tions are in switching power supplies, converters, free-wheel-waveforming diodes, and reverse battery protection.V 60 V150° C T operationRRMJCenter tap TO-247 packageI @ tp = 5 µs sine 1020 AFSMHigh purity, high temperature epoxy encapsulation forenhanced mechanical strength and moisture resistanceV @ 20 Apk, T =125°C 0.62 V F J Very low forward voltage drop(per leg)High frequency operationGuard ring for enhanced ruggedness and long termT - 55 to 150 °CJreliabilityCase StylesMBR4060WTTO-247 1MBR4060WTBulletin PD-20052 rev. A 08/03Voltage RatingsPart number MBR4060WTV Max. DC Reverse Voltage (V)R 60V Max. Working Peak Reverse Voltage (V)RWMAbsolute Maximum RatingsParameters Values Units ConditionsI Max. Average Forward (Per Device) 40 A @ T = 108°C, 50% duty cycle, rectangular waveformF(AV) CCurrent (Per Leg) 20I Max.Peak One Cycle Non-Repetitive 1020 5µs Sine or 3µs Rect. pulse Following any ratedAFSMload condition and withSurge Current ( Per Leg) See fig.7 265 10ms Sine or 6ms Rect. pulserated V appliedRRM E Non-Repetitive Avalanche Energy 13 mJ T = 25 °C, I = 1.5 Amps, L = 11.5 mHAS J AS (Per Leg)I Repetitive Avalanche Current 1.5 A Current decaying linearly to zero in 1 µsecAR(Per Leg) Frequency limited by T max. V = 1.5 x V typicalJ A R
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