MBR3050 ,30 Ampere Schottky Barrier Rectifiersapplications. TO-247AD 0.82(20.8)0.134(3.4)0.114(2.9)• Metal silicon junction, majority carrier0.11 ..
MBR3060 ,30A, 60V ultra fast recovery rectifierELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 1)LCharacteristic Symbol Max Uni ..
MBR3060FCT , 30 Amp Schottky Barrier Rectifier 20 to 100 Volts
MBR30H100CT ,100V, 30A SWITCHMODE Power RectifierThermal Characteristics (T = 25°C unless otherwise noted)CParameter Symbol MBR MBRF MBRB UnitOTypic ..
MBR30H100CT-E1 , HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR30H100PT ,DiodesThermal Characteristics Ratings per leg at TA = 25°C unless otherwise specified.Parameter Symbol MB ..
MC14574P ,CMOS MSI(PROGRAMMABLE DUAL OP AMP / DUAL COMPARATORMAXIMUM RATINGS? (Voltages referenced to V531Rating 7 Symbol Value UnitDC Supply Voltage VDD 7 0 51 ..
MC14575P ,CMOS MSI(PROGRAMMABLE DUAL OP AMP / DUAL COMPARATORMOTOROLAI SEMICONDUCTOR -i--i-l-ll-ll-lellMl.TECHNICAL DATAMCI4573MCI4574MC14575.1QUAD PROGRAMMABLE ..
MC14576AP ,Dual Video AmplifiersMAXIMUM RATINGS. _This device oontai ns protection cir-Parameter Value Unit cuitry to guard against ..
MC14577AP ,Dual Video AmplifiersMOTOROLA- SEMICONDUCTOR 'TECHNICAL DATA 'Advance InformationDual Video AmplifiersCMOSEach of these ..
MC1458 ,Amplifiers and Comparatorsmaximum ratings” may cause permanent damage to the device. These are stress ratings only, andfuncti ..
MC14580BCP ,4 x 4 Multiport Register**SEMICONDUCTOR TECHNICAL DATA * * **L SUFFIXThe MC14580B is a 4 by 4 multiport register useful in ..
MBR3050
30 Ampere Schottky Barrier Rectifiers
MBR3035PT - MBR3060PT MBR3035PT - MBR3060PT 0.203(5.16) Features 0.193(4.90) 0.645(16.4) 0.625(15.9) 0.078(1.98) • Low power loss, high efficiency. 0.245(6.2) 0.323(8.2) 0.225(5.7) 10° 0.313(7.9) • High surge capacity. 30° • For use in low voltage, high frequency .17(4.3) 10° TYP TO-3P/ inverters, free wheeling, and polarity 0.84(21.3) BOTH SIDES protection applications. TO-247AD 0.82(20.8) 0.134(3.4) 0.114(2.9) • Metal silicon junction, majority carrier 0.118(3.0) 1 23 0.086(2.18) conduction. 0.108(2.7) 0.076(1.93) • High current capacity, low forward 0.16(4.1) PIN 1 0.127(3.22) + 0.14(3.5) voltage drop. 0.117(2.97) 0.795(20.2) CASE PIN 3 0.775(19.7) • Guard ring for over voltage protection. PIN 2 0.048(1.22) 0.030(0.76) 0.044(1.12) 0.020(0.51) 0.225(5.7) 30 Ampere Schottky Barrier Rectifiers 0.205(5.2) Dimensions are in: inches (mm) Absolute Maximum Ratings* T = 25°C unless otherwise noted A Symbol Parameter Value Units I Average Rectified Current 30 A O i Peak Repetitive Forward Current f(repetitive) (Rated V , Square Wave, 20 KHz) @ T = 130 C 30 A R A ° Peak Forward Surge Current i f(surge) 8.3 ms single half-sine-wave 200 A Superimposed on rated load (JEDEC method) P Total Device Dissipation 3.0 W D Derate above 25°C 25 mW/°C Thermal Resistance, Junction to Lead 1.4 Rθ °C/W JL Storage Temperature Range -65 to +175 C T ° stg Operating Junction Temperature -65 to +150 C T ° J *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics T = 25°C unless otherwise noted A Parameter Device Units 3035PT 3045PT 3050PT 3060PT Peak Repetitive Reverse Voltage 35 45 50 60 V Maximum RMS Voltage 24 31 35 42 V 35 45 50 60 V DC Reverse Voltage (Rated VR) 10,000 V/uS Voltage Rate of Change (Rated V ) R Maximum Reverse Current 1.0 5.0 mA @ rated V T = 25°C R A 60 100 mA T = 125°C A Maximum Forward Voltage I 20 A, T = 25°C - 0.75 V F = C 0.60 0.65 V I 20 A, T = 125°C F = C 0.76 - V I 30 A, T = 25°C F = C 0.72 - V I 30 A, T = 125°C F = C Peak Repetitive Reverse Surge 1.0 0.5 A Current 2.0 us Pulsu Width, f = 1.0 KHz 1999 MBR3035PT - MBR3060PT, Rev. A
