MBM29DL324BE90TN ,Flash memory CMOS 32M (4M x 8/2 x 16)bit dual operationFUJITSU SEMICONDUCTORDS05-20881-3EDATA SHEETFLASH MEMORYCMOS32M (4M · 8/2M · 16) BIT Dual Operation ..
MBM29DL324BE-90TN ,32M (4M x 8/2M x 16) BIT Dual OperationFUJITSU SEMICONDUCTORDS05-20881-3EDATA SHEETFLASH MEMORYCMOS32M (4M · 8/2M · 16) BIT Dual Operation ..
MBM29DL324TD-90PFTN ,CMOS 32M (4M x 8/2M x16) bit dual operationFEATURES• 0.33 m m Process Technology• Simultaneous Read/Write operations (dual bank)Multiple devic ..
MBM29DL324TD-90PFTN ,CMOS 32M (4M x 8/2M x16) bit dual operationFEATURES• 0.33 m m Process Technology• Simultaneous Read/Write operations (dual bank)Multiple devic ..
MBM29DL324TE90TN ,Flash memory CMOS 32M (4M x 8/2 x 16)bit dual operationFUJITSU SEMICONDUCTORDS05-20881-3EDATA SHEETFLASH MEMORYCMOS32M (4M · 8/2M · 16) BIT Dual Operation ..
MBM29DL324TE-90TN ,32M (4M x 8/2M x 16) BIT Dual OperationFUJITSU SEMICONDUCTORDS05-20881-3EDATA SHEETFLASH MEMORYCMOS32M (4M · 8/2M · 16) BIT Dual Operation ..
MC14406L ,V(cc): -0.5 to +18V; 10mA; full duplex 8-bit companded PCM codecM014406(l)) MOTOROLAliit14407Advanced Information- CMOS LSI(LOW POWER COMPLEMENTARY MOS)PULSE CODE ..
MC14406P ,V(cc): -0.5 to +18V; 10mA; full duplex 8-bit companded PCM codecMAXIMUM RATINGS (Voltages Referenced to VSS)rRating Symbol Value UnitToe Supply Voltage VDD - vss - ..
MC14407L ,V(cc): -0.5 to +18V; 10mA; full duplex 8-bit companded PCM codecMAXIMUM RATINGS (Voltages Referenced to VSS)rRating Symbol Value UnitToe Supply Voltage VDD - vss - ..
MC14407P ,V(cc): -0.5 to +18V; 10mA; full duplex 8-bit companded PCM codecELECTRICAL CHARACTERISTICSVon _ -4o°c +25°c +85°CCharacteristic A Symbol Vdc Min Max Min k Typ -Mac ..
MC14408P ,BINARY TO PHONE PULSE CONVERTER SUBSYSTEMMnTanl Al
MC14408P ,BINARY TO PHONE PULSE CONVERTER SUBSYSTEMMnTanl Al
MBM29DL322BE90TN-MBM29DL324BE90TN-MBM29DL324TE90TN