MBM2212-20 ,MOS 1024 BIT NON VOLATILE RANDOM ACCESS MEMORYapplications.
256 words x 4 bit organization, fully decoded
10ms selrtimed auto store
10 years ..
MBM2212-20 ,MOS 1024 BIT NON VOLATILE RANDOM ACCESS MEMORYalllllllillllllllllg
FUJITSU
jllllljlliljilllllilllljlllBl
1024-BIT NON- F'
ACCESS MEMOR
..
MBM2212-25 ,MOS 1024 BIT NON VOLATILE RANDOM ACCESS MEMORYapplications such as system potentiometer or electrical
switch to memorize the system condition et ..
MBM2716 ,UV Erasable 16384 Bit ROMFUJITSU
MICROELECTRONICS
UV ERhSABLE 16,384-BIT
The Fujitsu MBM2716 is a high
speed 16,384- ..
MBM29DL161TD-90PBT ,Flash memory CMOS 16M (2M x 8/1M x16) bit dual operationFUJITSU SEMICONDUCTORDS05-20874-4EDATA SHEETFLASH MEMORYCMOS16M (2M · 8/1M · 16) BIT Dual Operatio ..
MBM29DL161TD-90PFTN ,Flash memory CMOS 16M (2M x 8/1M x16) bit dual operationFEATURES• 0.33 m m Process Technology• Simultaneous Read/Write operations (dual bank)Multiple devic ..
MC1411 ,PERIPHERAL DRIVER ARRAYSMOTOROLA SC (TELECOH) ESE D " 53b?253 DUBESSE b33 -l'|0T5MCI411,BMOTOROLA- SEMICONDUCTOR -lil1l-lrl ..
MC1411P ,PERIPHERAL DRIVER ARRAYSMOTOROLA SC (TELECOH) ESE D " 53b?253 DUBESSE b33 -l'|0T5MCI411,BMOTOROLA- SEMICONDUCTOR -lil1l-lrl ..
MC1411P ,PERIPHERAL DRIVER ARRAYSMOTOROLA SC (TELECOH) ESE D " 53b?253 DUBESSE b33 -l'|0T5MCI411,BMOTOROLA- SEMICONDUCTOR -lil1l-lrl ..
MC1412P ,PERIPHERAL DRIVER ARRAYSMAXIMUM RATINGS (TA = 25°C and rating apply to any one deVIce In thepackage unless otherwise noted ..
MC1413 ,High Voltage, High Current Darlington Transistor ArraysFeatures• Pb−Free Packages are Available*SOIC−16D SUFFIX161/7 MC1413, BCASE 751B12.7 k Pin 95.0 kOR ..
MC1413BD ,High Voltage, High Current Darlington Transistor ArraysMOTOROLA SC (TELECOH) ESE D " 53b?253 DUBESSE b33 -l'|0T5MCI411,BMOTOROLA- SEMICONDUCTOR -lil1l-lrl ..
MBM2212-20-MBM2212-25
