MB2S ,Bridge RectifiersMB1S - MB8SMB1S - MB8S43
MB3120 ,Compandor ICBLOCK DIAGRAM
COMPRESSOR
EXPANDOH
INPUT
COMMON
MUTE
COMPRESSOR',
SECTION
COMPRESS ..
MB3516A ,RGB EncoderFUJITSU SEMICONDUCTORDS04-28026-2EDATA SHEETASSP Image ControlRGB EncoderMB3516An DESCRIPTIONThe ..
MB3516APF ,RGB EncoderFUJITSU SEMICONDUCTORDS04-28026-2EDATA SHEETASSP Image ControlRGB EncoderMB3516An DESCRIPTIONThe ..
MB3614 ,QUAD OPERATIONAL AMPLIFIERFUJITSU SEMICONDUCTORDS04-11107-3EDATA SHEETLINEAR ICQUAD OPERATIONAL AMPLIFIERMB3614QUAD OPERATION ..
MB3614P ,Quad operational amplifierelectrical characteristics of current industrial standard operational am-DIP-14P-M02plifier and req ..
MBCR10J , MINIATURE SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
MBCR10JLH , Low VF Bridge Rectifier
MBCR10K , MINIATURE SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
MBCR10M , MINIATURE SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
MBD101 ,Schottky Barrier DiodesMOTOROLA SC {XSTRS/R " B”! DEIEEIE'ESLI Cllri"ilalil'? D ill8387254 MOTOROLA SC (XSTRS/R F) 890 796 ..
MBD110DW ,Dual Schottky Barrier Diodeshttp://onsemi.com2MBD110DWT1 MBD330DWT1 MBD770DWT1TYPICAL CHARACTERISTICSMBD110DWT11.0 1000.70.5V = ..
MB2S
Bridge Rectifiers
MB1S - MB8S MB1S - MB8S 4 3 Features • Low leakage + + - + • Surge overload rating: 35 amperes peak. ~ ~ • Ideal for printed circuit board. SOIC-4 2 1 Polarity symbols molded • UL certified, UL #E111753. or marking on body Bridge Rectifiers Absolute Maximum Ratings* T = 25°C unless otherwise noted A Value Symbol Parameter Units 1S 2S 4S 6S 8S V Maximum Repetitive Reverse Voltage 100 200 400 600 800 V RRM V Maximum RMS Bridge Input Voltage 70 140 280 420 560 V RMS V DC Reverse Voltage (Rated V) 100 200 400 600 800 V R R I Average Rectified Forward Current, @ T = 50°C 0.5 A F(AV) A I Non-repetitive Peak Forward Surge Current FSM 35 A 8.3 ms Single Half-Sine-Wave Storage Temperature Range -55 to +150 T °C stg T Operating Junction Temperature -55 to +150 °C J *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter Value Units P Power Dissipation 1.4 W D R Thermal Resistance, Junction to Ambient,* per leg 85 C/W ° θJA R Thermal Resistance, Junction to Lead,* per leg 20 °C/W θJL *Device mounted on PCB with 0.5-0.5" (13x13 mm) lead length. Electrical Characteristics T = 25°C unless otherwise noted A Symbol Parameter Device Units V Forward Voltage, per bridge @ 0.5 A 1.0 V F I 5.0 Reverse Current, per leg @ rated V T = 25°C μA R R A 0.5 mA T = 125°C A 2 2 I t rating for fusing t < 8.3 ms 5.0 A s C Total Capacitance, per leg T 13 pF V = 4.0 V, f = 1.0 MHz R 2001 MB1S-MB8S, Rev. C
