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MAX9995ETX+-MAX9995ETX+T
Dual, SiGe, High-Linearity, 1700MHz to 2700MHz Downconversion Mixer with LO Buffer/Switch
MAX9995
Dual, SiGe, High-Linearity, 1700MHz to 2700MHz
Downconversion Mixer with LO Buffer/SwitchEVALUATION KIT AVAILABLE
General DescriptionThe MAX9995 dual, high-linearity, downconversion
mixer provides 6.1dB gain, +25.6dBm IIP3, and 9.8dB
NF for WCDMA, TD-SCDMA, LTE, TD-LTE, and
GSM/EDGE base-station applications.
This device integrates baluns in the RF and LO ports, a
dual-input LO selectable switch, an LO buffer, two double-
balanced mixers, and a pair of differential IF output ampli-
fiers. The MAX9995 requires a typical LO drive of 0dBm
and supply current is guaranteed to be below 380mA.
These devices are available in a compact 36-pin TQFN
package (6mm ×6mm) with an exposed pad. Electrical
performance is guaranteed over the extended tempera-
ture range, from TC= -40°C to +100°C.
Applications
Features1700MHz to 2700MHz RF Frequency Range1400MHz to 2600MHz LO Frequency Range40MHz to 350MHz IF Frequency Range6.1dB Conversion Gain+25.6dBm Input IP39.8dB Noise Figure66dBc 2RF - 2LO Spurious Rejection at
PRF= -10dBmDual Channels Ideal for Diversity Receiver
ApplicationsIntegrated LO BufferIntegrated RF and LO Baluns for Single-Ended
InputsLow -3dBm to +3dBm LO DriveBuilt-In SPDT LO Switch with 50dB LO1 - LO2
Isolation and 50ns Switching Time44dB Channel-to-Channel Isolationcdma2000 is a registered trademark of Telecommunications
Ordering Information
PARTTEMP RANGEPIN-PACKAGEMAX9995ETX+TC* = -40°C to +100°C36 TQFN-EP**
MAX9995ETX+TTC* = -40°C to +100°C36 TQFN-EP**
+Denotes a lead(PB)-free and RoHS-compliant package.
*TC= Case temperature.
**EP = Exposed pad.
T = Tape and reel.11121314151617182930313233343536LO2
VCC
GND
VCC
GND
GND
TAPDIV
TAPMAIN
RFMAIN
RFDIV
EXPOSED
PAD*
IFD_SET
GND
IND_EXT
LO_ADJ_D
N.C.
N.C.LO_ADJ_MV
IND_EXT
GNDIFM_SET
IFD+
IFD-
IFM+IFM-
LO1
LOSEL
GND
GND
GND
GND
GND
VCC
MAX9995
6mm x 6mm TQFNTOP VIEW
Pin Configuration/
Functional DiagramWCDMA, TD-SCDMA,
and cdma2000®3G
Base Stations
LTE and TD-LTE
Base Stations
GSM/EDGE
Base Stations
PHS/PAS Base Stations
Fixed Broadband
Wireless Access
Wireless Local Loop
Private Mobile Radio
Military Systems
MAX9995
Dual, SiGe, High-Linearity, 1700MHz to 2700MHz
Downconversion Mixer with LO Buffer/Switch
ABSOLUTE MAXIMUM RATINGSStresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
VCC........................................................................-0.3V to +5.5V
LO1, LO2 to GND...............................................................±0.3V
IFM_, IFD_, IFM_SET, IFD_SET, LOSEL,
LO_ADJ_M, LO_ADJ_D to GND.............-0.3V to (VCC+ 0.3V)
RFMAIN, RFDIV, and LO_ Input Power..........................+20dBm
RFMAIN, RFDIV Current
(RF is DC shorted to GND through balun)......................50mA
Continuous Power Dissipation (Note 1).............................6.75W
Operating Temperature Range (Note 2)...TC= -40°C to +100°C
Maximum Junction Temperature.....................................+150°C
Storage Temperature Range.............................-65°C to +150°C
Lead Temperature (soldering, 10s).................................+300°C
Soldering Temperature (reflow).......................................+260°C
DC ELECTRICAL CHARACTERISTICS(Typical Application Circuit, no input RF or LO signals applied, VCC= 4.75V to 5.25V, TC= -40°C to +85°C. Typical values are at VCC
= 5.0V, TC= +25°C, unless otherwise noted.)
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITSSupply VoltageVCC4.7555.25V
Total supply current332380
VCC (pin 16)8290
VCC (pin 30)97110
IFM+/IFM- (total of both)7090
Supply CurrentICC
IFD+/IFD- (total of both)7090
LOSEL Input High VoltageVIH2V
LOSEL Input Low VoltageVIL0.8V
LOSEL Input CurrentIIL and IIH-10+10µA
Note 1:Based on junction temperature TJ= TC+ (θJCx VCCx ICC). This formula can be used when the temperature of the exposed
pad is known while the device is soldered down to a PCB. See the Applications Informationsection for details. The junction
temperature must not exceed +150°C.
Note 2:TCis the temperature on the exposed pad of the package. TAis the ambient temperature of the device and PCB.
TQFN
Junction-to-Ambient Thermal Resistance (θJA)
(Note 3, 4)....................................................................38°C/W
Junction-to-Board Thermal Resistance (θJB)................12.2°C/W
Junction-to-Case Thermal Resistance (θJC)
(Note 1, 4)...................................................................7.4°C/W
PACKAGE THERMAL CHARACTERISTICS
Note 3:Junction temperature TJ= TA+ (θJAx VCCx ICC). This formula can be used when the ambient temperature of the PCB is
known. The junction temperature must not exceed +150°C.
Note 4:Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial.
RECOMMENDED AC OPERATING CONDITIONS
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITSRF Frequency RangefRF(Note 5)1700 2700MHz
LO Frequency RangefLO(Note 5)14002600MHz
IF Frequency RangefIF(Note 5)40350MHz
LO Drive LevelPLO(Note 5)-3+3dBm
MAX9995
Dual, SiGe, High-Linearity, 1700MHz to 2700MHz
Downconversion Mixer with LO Buffer/Switch
AC ELECTRICAL CHARACTERISTICS—fRF= 1700MHz TO 2200MHz(Typical Application Circuit, VCC= 4.75V to 5.25V, RF and LO ports are driven from 50Ωsources, PLO= -3dBm to +3dBm, fRF=
1700MHz to 2200MHz, fLO= 1400MHz to 2000MHz, fIF= 200MHz, with fRF> fLO, TC= -40°C to +85°C. Typical values are at VCC=
5.0V, PLO= 0dBm, fRF= 1900MHz, fLO= 1700MHz, fIF= 200MHz, and TC= +25°C, unless otherwise noted.) (Notes 6, 7)
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITfRF = 1710MHz to 1875MHz6
fRF = 1850MHz to 1910MHz6.2
TC = +100°C4.6Conversion GainGC
fRF = 2110MHz to 2170MHz6.1
fRF = 1710MHz to 1875MHz±0.5±1
fRF = 1850MHz to 1910MHz±0.5±1Gain Variation from Nominal
VCC = 5.0V,
TC = +25°C,
PLO = 0dBm,
PRF = -10dBmfRF = 2110MHz to 2170MHz±0.5±1
Gain Variation with Temperature±0.75dB
fRF = 1710MHz to 1875MHz9.7
fRF = 1850MHz to 1910MHz9.8Noise FigureNFNo blockers
present
fRF = 2110MHz to 2170MHz9.9
Noise Figure (with Blocker)
8dBm blocker tone applied to RF port at
2000MHz, fRF = 1900MHz, fLO = 1710MHz,
PLO = -3dBmdB
Input 1dB Compression PointP1dB(Note 8)9.512.6dBm
(Notes 8, 9)2325.6Input Third-Order Intercept PointIIP3TC = +100°C, Note 926.1dBm
PRF = -10dBm66
PRF = -10dBm, TC = +100°C73.3
PRF = -5dBm612RF - 2LO Spur Rejection2 x 2
fRF = 1900MHz,
fLO = 1700MHz,
fSPUR = 1800MHzRF = - 5d Bm , TC = + 100°C 68.3
dBc
PRF = -10dBm7088
PRF = -10dBm, TC = +100°C84.5
PRF = -5dBm60783RF - 3LO Spur Rejection3 x 3
fRF = 1900MHz,
fLO = 1700MHz,
fSPUR = 1766.7MHzRF = - 5d Bm , TC = + 100°C 74.5
dBc
Maximum LO Leakage at RF PortfLO = 1400MHz to 2000MHz-29dBmaxi m um 2LO Leakag e at RF P or tfLO = 1400MHz to 2000MHz-17dBm
fLO = 1400MHz to 2000MHz-25Maximum LO Leakage at IF PortTC = +100°C-50.4dBm
fRF = 1700MHz to 2200MHz, fIF = 200MHz37Minimum RF-to-IF IsolationTC = +100°C44dB
LO1 - LO2 IsolationPLO1 = 0dBm, PLO2 = 0dBm (Note 10)4050.5dB44Minimum Channel-to-Channel
Isolation
PRF = -10dBm, RFMAIN (RFDIV)
power measured at IFDIV (IFMAIN),
relative to IFMAIN (IFDIV),
all unused ports terminated at 50Ω
TC =
+100°C54.7
LO Switching Time50% of LOSEL to IF settled to within 2°50ns
MAX9995
Dual, SiGe, High-Linearity, 1700MHz to 2700MHz
Downconversion Mixer with LO Buffer/Switch
CONVERSION GAIN vs. RF FREQUENCYMAX9995 toc01
RF FREQUENCY (MHz)
CONVERSION GAIN (dB)
TC = -20°C
TC = +85°C
TC = +25°C
CONVERSION GAIN vs. RF FREQUENCYMAX9995 toc02
RF FREQUENCY (MHz)
CONVERSION GAIN (dB)
PLO = -3dBm, 0dBm, +3dBm
CONVERSION GAIN vs. RF FREQUENCYMAX9995 toc03
RF FREQUENCY (MHz)
CONVERSION GAIN (dB)
VCC = 4.75V
VCC = 5.0V
VCC = 5.25V
Typical Operating Characteristics(Typical Application Circuit, VCC= 5.0V, PRF= -5dBm, PLO= 0dBm, LO is low-side injected for a 200MHz IF, TC= +25°C.)
Note 5:Operation outside this frequency band is possible but has not been characterized. See the Typical Operating Characteristics.
Note 6:Guaranteed by design and characterization.
Note 7:All limits reflect losses of external components. Output measurements taken at IF outputs of Typical Application Circuit.
Note 8:Production tested.
Note 9:Two tones 3MHz spacing, -5dBm per tone at RF port.
Note 10:Measured at IF port at IF frequency. fLO1and fLO2are offset by 1MHz.
Note 11:IF return loss can be optimized by external matching components.
AC ELECTRICAL CHARACTERISTICS—fRF= 2540MHz(Typical Application Circuit, RF and LO ports are driven from 50Ωsources, fRF> fLO, VCC= 5.0V, PRF= -5dBm, PLO= 0dBm, fRF=
2540MHz, fLO= 2400MHz, fIF= 140MHz, TC= +25°C, unless otherwise noted.) (Note 7)
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITSRF Return Loss14dB
LO port selected18LO Return LossLO port unselected21dB
IF Return LossLO driven at 0dBm, RF terminated into 50Ω
(Note 11)21dB
Conversion GainGC5.2dB
Input Third-Order Intercept PointIIP3Two tones: fRF1 = 2540MHz, fRF2 = 2541MHz,
PRF = -5dBm/tone24.6dBm
PRF = -10dBm582RF - 2LO Spurious Response2 x 2PRF = -5dBm63dBc
PRF = -10dBm723RF - 3LO Spurious Response3 x 3PRF = -5dBm82dBc
LO Leakage at IF Port-45dBm
RF-to-IF Isolation49dB
Channel-to-Channel Isolation
PRF = -10dBm, RFMAIN (RFDIV) power
measured at IFDIV (IFMAIN), relative to IFMAIN
(IFDIV), all unused ports terminated at 50ΩdB
MAX9995
Dual, SiGe, High-Linearity, 1700MHz to 2700MHz
Downconversion Mixer with LO Buffer/Switch
INPUT IP3 vs. RF FREQUENCYIIP3 (dBm)
MAX9995 toc04
RF FREQUENCY (MHz)
TC = +85°C
TC = -20°C
TC = +25°C
PRF = -5dBm/TONE
2RF - 2LO vs. FUNDAMENTAL FREQUENCYMAX9995 toc07
2RF - 2LO (dBc)
FUNDAMENTAL FREQUENCY (MHz)
TC = +85°C
TC = +25°C
TC = -20°C
PRF = -5dBm
INPUT IP3 vs. RF FREQUENCY
IIP3 (dBm)
MAX9995 toc05
RF FREQUENCY (MHz)
PLO = 0dBm
PLO = +3dBm
PLO = -3dBm
PRF = -5dBm/TONE
INPUT IP3 vs. RF FREQUENCYIIP3 (dBm)
MAX9995 toc06
RF FREQUENCY (MHz)
VCC = 5.25V
VCC = 4.75VVCC = 5.0V
PRF = -5dBm/TONE
2RF - 2LO vs. FUNDAMENTAL FREQUENCYMAX9995 toc08
2RF - 2LO (dBc)
FUNDAMENTAL FREQUENCY (MHz)
PLO = -3dBm
PLO = +3dBm
PLO = 0dBm
PRF = -5dBm
2RF - 2LO vs. FUNDAMENTAL FREQUENCYMAX9995 toc09
2RF - 2LO (dBc)
FUNDAMENTAL FREQUENCY (MHz)
VCC = 4.75V
VCC = 5.0VVCC = 5.25V
PRF = -5dBm
Typical Operating Characteristics (continued)(Typical Application Circuit, VCC= 5.0V, PRF= -5dBm, PLO= 0dBm, LO is low-side injected for a 200MHz IF, TC= +25°C.)
3RF - 3LO vs. FUNDAMENTAL FREQUENCYMAX9995 toc10
3RF - 3LO (dBc)
FUNDAMENTAL FREQUENCY (MHz)
TC = -20°C
TC = +25°C
TC = +85°C
PRF = -5dBm
3RF - 3LO vs. FUNDAMENTAL FREQUENCYMAX9995 toc11
3RF - 3LO (dBc)
FUNDAMENTAL FREQUENCY (MHz)
PLO = -3dBmPLO = 0dBm
PLO = +3dBm
PRF = -5dBm
3RF - 3LO vs. FUNDAMENTAL FREQUENCYMAX9995 toc12
3RF - 3LO (dBc)
FUNDAMENTAL FREQUENCY (MHz)
VCC = 5.0V
VCC = 5.25V
VCC = 4.75V
PRF = -5dBm
MAX9995
Dual, SiGe, High-Linearity, 1700MHz to 2700MHz
Downconversion Mixer with LO Buffer/Switch
CHANNEL ISOLATION vs. RF FREQUENCYCHANNEL ISOLATION (dB)
MAX9995 toc19
RF FREQUENCY (MHz)
TC = +85°CTC = +25°C
TC = -20°C
CHANNEL ISOLATION vs. RF FREQUENCYCHANNEL ISOLATION (dB)
MAX9995 toc20
RF FREQUENCY (MHz)
PLO = 0dBmPLO = +3dBm
PLO = -3dBm
CHANNEL ISOLATION vs. RF FREQUENCYCHANNEL ISOLATION (dB)
MAX9995 toc21
RF FREQUENCY (MHz)
VCC = 4.75VVCC = 5.0V
VCC = 5.25V
INPUT P1dB vs. RF FREQUENCY INPUT P
1dB
(dBm)
MAX9995 toc13
RF FREQUENCY (MHz)
TC = +25°CTC = +85°C
TC = -20°C
LO SWITCH ISOLATION vs. LO FREQUENCYMAX9995 toc16
LO FREQUENCY (MHz)
LO SWITCH ISOLATION (dB)
TC = -20°C
TC = +25°C
TC = +85°C
INPUT P1dB vs. RF FREQUENCY
INPUT P
1dB
(dBm)
MAX9995 toc14
RF FREQUENCY (MHz)
PLO = 0dBm
PLO = -3dBm
PLO = +3dBm
INPUT P1dB vs. RF FREQUENCY
INPUT P
1dB
(dBm)
MAX9995 toc15
RF FREQUENCY (MHz)
VCC = 5.25V
VCC = 4.75V
VCC = 5.0V
LO SWITCH ISOLATION vs. LO FREQUENCYMAX9995 toc17
LO FREQUENCY (MHz)
LO SWITCH ISOLATION (dB)
PLO = -3dBm
PLO = 0dBm
PLO = +3dBm
LO SWITCH ISOLATION vs. LO FREQUENCYMAX9995 toc18
LO FREQUENCY (MHz)
LO SWITCH ISOLATION (dB)
VCC = 4.75V, 5.0V, 5.25V
Typical Operating Characteristics (continued)(Typical Application Circuit, VCC= 5.0V, PRF= -5dBm, PLO= 0dBm, LO is low-side injected for a 200MHz IF, TC= +25°C.)
MAX9995
Dual, SiGe, High-Linearity, 1700MHz to 2700MHz
Downconversion Mixer with LO Buffer/SwitchLO LEAKAGE AT IF PORT vs. LO FREQUENCY
MAX9995 toc22
LO LEAKAGE AT IF PORT (dBm)
LO FREQUENCY (MHz)
TC = -20°C
TC = +85°CTC = +25°C
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
MAX9995 toc25
LO LEAKAGE AT RF PORT (dBm)
LO FREQUENCY (MHz)
TC = -20°C
TC = +85°C
TC = +25°C
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
MAX9995 toc23
LO LEAKAGE AT IF PORT (dBm)
LO FREQUENCY (MHz)
PLO = -3dBm
PLO = +3dBmPLO = 0dBm
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
MAX9995 toc24
LO LEAKAGE AT IF PORT (dBm)
LO FREQUENCY (MHz)
VCC = 5.25V
VCC = 4.75V
VCC = 5.0V
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
MAX9995 toc26
LO LEAKAGE AT RF PORT (dBm)
LO FREQUENCY (MHz)
PLO = +3dBm
PLO = -3dBmPLO = 0dBm-55
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
LO LEAKAGE AT RF PORT (dBm)
LO FREQUENCY (MHz)
VCC = 4.75V, 5.0V, 5.25V
MAX9995 toc27
Typical Operating Characteristics (continued)(Typical Application Circuit, VCC= 5.0V, PRF= -5dBm, PLO= 0dBm, LO is low-side injected for a 200MHz IF, TC= +25°C.)
RF-TO-IF ISOLATION vs. RF FREQUENCYRF-TO-IF ISOLATION (dB)
MAX9995 toc28
RF FREQUENCY (MHz)
TC = +85°C
TC = -20°C
TC = +25°C
RF-TO-IF ISOLATION vs. RF FREQUENCYRF-TO-IF ISOLATION (dB)
MAX9995 toc29
RF FREQUENCY (MHz)
PLO = -3dBm, 0dBm, +3dBm
RF-TO-IF ISOLATION vs. RF FREQUENCY
RF-TO-IF ISOLATION (dB)
MAX9995 toc30
RF FREQUENCY (MHz)
VCC = 5.25V
VCC = 4.75V
VCC = 5.0V