MAX9993ETP+-MAX9993ETP+T Fast Delivery |IC PHOENIX CO.,LIMITED

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MAX9993ETP+-MAX9993ETP+T
High-Linearity 1700MHz to 2200MHz Down-Conversion Mixer with LO Buffer/Switch
MAX9993
High-Linearity 1700MHz to 2200MHz Down-
Conversion Mixer with LO Buffer/Switch
19-2596; Rev 0; 10/02
General Description
The MAX9993 high-linearity down-conversion mixer
provides 8.5dB of gain, +23.5dBm IIP3, and 9.5dB NF
for UMTS, DCS, and PCS base-station applications.
The MAX9993 integrates baluns in the RF and LO ports,
a dual-input LO selectable switch, an LO buffer, a dou-
ble-balanced mixer, and a differential IF output amplifi-
er. The MAX9993 requires a typical LO drive of +3dBm,
and supply current is guaranteed to below 230mA.
The MAX9993 is available in a compact 20-pin thin
QFN package (5mm ✕5mm) with an exposed pad.
Electrical performance is guaranteed over the extended
-40°C to +85°C temperature range.
The MAX9993 EV kit is available; contact the factory for
more information.
Applications
UMTS and 3G Base Stations
DCS1800 and EDGE Base Stations
PCS1900 Base Stations
Point-to-Point Microwave Systems
Wireless Local Loop
Private Mobile Radio
Military Systems
Features+23.5dBm Input IIP31700MHz to 2200MHz RF Frequency Range40MHz to 350MHz IF Frequency Range1400MHz to 2000MHz LO Frequency Range8.5dB Conversion Gain9.5dB Noise FigureIntegrated LO BufferSwitch-Selectable (SPDT), Two LO InputsLow 0 to +6dBm LO Drive40dB LO1-to-LO2 Isolation
Ordering Information
PARTTEMP RANGEPIN-PACKAGE
MAX9993ETP-T-40°C to 85°C20 Thin QFN-EP*
*EP = Exposed pad.19181716789
TOP VIEW
THIN QFN
VCC
TAP
GND
LOBIAS
LO1
GND
GND
LO2
LOSEL
LEXTIFBIASIF+IF-
GND
GND
GND
GND
MAX9993
Pin Configuration/Functional Diagram
MAX9993
High-Linearity 1700MHz to 2200MHz Down-
Conversion Mixer with LO Buffer/Switch
ABSOLUTE MAXIMUM RATINGS
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
VCC..........................................................................-0.3V to 5.5V
RF (RF is DC shorted to GND through balun).....................50mA
LO1, LO2 to GND...............................................................±0.3V
TAP, IF+, IF- to GND..................................-0.3V to (VCC+ 0.3V)
LOSEL to GND................................-0.3V to (VCC (pin 8) + 0.3V)
LOBIAS, IFBIAS, LEXT to GND..................-0.3V to (VCC+ 0.3V)
RF and LO Input Power..................................................+22dBm
Continuous Power Dissipation (TA= +70°C)
20-Lead Thin QFN
(derate 30.3mW/°C above TA= +70°C)....................2200mW
θJA....................................................................................33°C/W
Operating Temperature Range...........................-40°C to +85°C
Storage Temperature Range.............................-65°C to +150°C
Lead Temperature (soldering, 10s).................................+300°C
DC ELECTRICAL CHARACTERISTICS
(Typical Operating Circuit as shown, no input RF or LO signals applied. VCC= 4.75V to 5.25V, TA= -40°C to +85°C. Typical values are
at VCC= 5.0V and TA= +25°C, unless otherwise noted.)
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITS
Supply VoltageVCC4.755.005.25V
Total supply current202230
VCC (pin 8)87105Supply CurrentICC
IF+/IF- (total of both)103133
LOSEL Input High VoltageVIH2.0V
LOSEL Input Low VoltageVIL0.8V
LOSEL Input CurrentIIL and IIH-5+5µA
AC ELECTRICAL CHARACTERISTICS
(Typical Operating Circuit, 4.75V < VCC< 5.75V, -40°C < TA< +85°, RF and LO ports are driven from 50Ωsources, 0dBm < PLO<
+6dBm, PRF= -5dBm, 1700MHz < fRF< 2200MHz, 1400MHz < fLO< 2000MHz, fIF= 200MHz. Typical values are for TA= +25°C
VCC= 5.0V, PLO= +3dBm, fRF= 1900MHz, fLO= 1700MHz, 200MHz IF.) (Notes 1, 2)
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITS
RF FrequencyfRF17002200MHz
LO FrequencyfLO(Note 6)14002000MHz
IF FrequencyfIF50350MHz
Conversion GainGC(Note 3)8.5dB
Gain Variation Over TemperatureTA = -40°C to +85°C0.0012dB/°C
Gain Variation from Nominal (3σ)0.45dB
Input Compression PointP1dB12.6dBm
Two RF tones: -5dBm each at 1950MHz
and 1951MHz, LO: +3dBm at 1750MHz24
Input Third-Order Intercept Point
(Note 3)IIP3
Two RF tones: -5dBm each at 2200MHz
and 2201MHz, LO: +3dBm at 2000MHz23
dBm
MAX9993
High-Linearity 1700MHz to 2200MHz Down-
Conversion Mixer with LO Buffer/Switch
AC ELECTRICAL CHARACTERISTICS (continued)
(Typical Operating Circuit, 4.75V < VCC< 5.75V, -40°C < TA< +85°, RF and LO ports are driven from 50Ωsources, 0dBm < PLO<
+6dBm, PRF= -5dBm, 1700MHz < fRF< 2200MHz, 1400MHz < fLO< 2000MHz, fIF= 200MHz. Typical values are for TA= +25°C
VCC= 5.0V, PLO= +3dBm, fRF= 1900MHz, fLO= 1700MHz, 200MHz IF.) (Notes 1, 2)
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITS
IIP3 Variation Over TemperatureTA = -40°C to +85°C±0.5dB
Noise FigureNFfRF = 1950MHz, fLO = 1750MHz,
measured single-side band9.5dB
Required LO DrivePLO036dBm
PLO = +3dBm65
2 ✕ 2
2 RF - 2 LO
PRF = -5dBm
fRF = 1950MHz
fLO = 1750MHz
fSPUR = 1850MHzPLO = +6dBm70
PLO = +3dBm67
Spurious Response at IF
3 ✕ 3
3 RF - 3 LO
PRF = -5dBm
fRF = 1950MHz
fLO = 1750MHz
fSPUR = 1816.66MHz
PLO = +6dBm68
dBc
Maximum LO-to-RF LeakagePLO = 0dBm to +6dBm,
fLO = 1400MHz to 2000MHz-19dBm
Maximum LO-to-IF LeakagePLO = 0dBm to +6dBm,
fLO = 1400MHz to 2000MHz-21dBm
Minimum RF-to-IF IsolationfRF = 1700MHz to 2200MHz37dB
Conversion Loss, LO to IFPLO = +0dBm, inject -20dBm at 200MHz
into LO port, measure 200MHz at IF28dB
LO Switching Time50% of LOSEL to IF settled to within
2 degrees<50ns
LO1-to-LO2 Isolation(Note 4)40dB
RF Return Loss19dB
LO port selected15LO Return LossLO port unselected14dB
IF Return LossRF terminated, PLO = +3dBm (Note 5)15dB
Note 1:Guaranteed by design and characterization.
Note 2:All limits reflect losses of external components. Output measurements taken at IFOUT of the Typical Application Circuit.
Note 3:Production tested.
Note 4:Measured at IF port at IF frequency. fLO1and fLO2are offset by 1MHz, PLO1= PLO2= +3dBm.
Note 5:IF return loss can be optimized by external matching components.
Note 6:Operation outside this range is possible, but with degraded performance of some specifications.
MAX9993
High-Linearity 1700MHz to 2200MHz Down-
Conversion Mixer with LO Buffer/Switch
Typical Operating Characteristics
(MAX9993 EV Kit, VCC= 5.0V, PRF= -5dBm, PLO= +3dBm, LO is low-side injected for a 200MHz IF, TA= +25°C. For high-side LO
injection curves, LO frequency is beyond maximum specified range, and is shown for completeness.)
INPUT IP3 vs. RF FREQUENCY
LOW-SIDE INJECTION
MAX9993-09
RF FREQUENCY (MHz)
INPUT IP3 (dBm)
TA = +85°C
TA = +25°C
TA = -40°C
2 LO - 2 RF RESPONSE vs. RF FREQUENCY
HIGH-SIDE INJECTION
MAX9993-08
2 LO - 2 RF RESPONSE (dBc)
RF FREQUENCY (MHz)
TA = -40°C
TA = +25°C
TA = +85°C
PRF = -5dBm
2 RF - 2 LO RESPONSE vs. RF FREQUENCY
LOW-SIDE INJECTION
MAX9993-07
2 RF- 2 LO RESPONSE (dBc)
RF FREQUENCY (MHz)
VCC = 5.25V
VCC = 4.75V, 5.0V
PRF = -5dBm
2 RF - 2 LO RESPONSE vs. RF FREQUENCY
LOW-SIDE INJECTION
MAX9993-06
2 RF- 2 LO RESPONSE (dBc)
RF FREQUENCY (MHz)
PLO = +6dBm
PLO = +3dBm
PLO = 0dBm
PRF = -5dBm
2 RF - 2 LO RESPONSE vs. RF FREQUENCY
LOW-SIDE INJECTION
MAX9993-05
2 RF- 2 LO RESPONSE (dBc)
RF FREQUENCY (MHz)
TA = +85°C
TA = -40°C
TA = +25°C
PRF = -5dBm
CONVERSION GAIN vs. RF FREQUENCY
HIGH-SIDE INJECTION
MAX9993-04
RF FREQUENCY (MHz)
CONVERSION GAIN (dB)
TA = +85°CTA = +25°CTA = -40°C
CONVERSION GAIN vs. RF FREQUENCY
LOW-SIDE INJECTION
MAX9993-03
RF FREQUENCY (MHz)
CONVERSION GAIN (dB)
VCC = 4.75V, 5.0V, 5.25V
CONVERSION GAIN vs. RF FREQUENCY
LOW-SIDE INJECTION
MAX9993-02
RF FREQUENCY (MHz)
CONVERSION GAIN (dB)
PLO = 0dBm, +3dBm, +6dBm
CONVERSION GAIN vs. RF FREQUENCY
LOW-SIDE INJECTION
MAX9993-01
RF FREQUENCY (MHz)
CONVERSION GAIN (dB)
TA = +85°CTA = +25°CTA = -40°C
21502100205020001950190018501800175017002200
MAX9993
High-Linearity 1700MHz to 2200MHz Down-
Conversion Mixer with LO Buffer/Switch
MAX9993 toc18
LO SWITCH ISOLATION vs. RF FREQUENCY
LOW-SIDE INJECTION
LO SWITCH ISOLATION (dB)
RF FREQUENCY (MHz)
PLO = +6dBm
PLO = 0dBm, +3dBmPLO1 = PLO2
ΔfLO = 1MHz
LO SWITCH ISOLATION vs. RF FREQUENCY
LOW-SIDE INJECTION
MAX9993 toc17
LO SWITCH ISOLATION (dB)
RF FREQUENCY (MHz)
TA = +25°C
TA = +85°C
TA = -40°C
PLO1 = PLO2 = +3dBm
ΔfLO = 1MHz
MAX9993 toc16
INPUT P
1dB
(dBm)
INPUT P1dB vs. RF FREQUENCY
HIGH-SIDE INJECTION
RF FREQUENCY (MHz)
TA = -40°C
TA = +25°C
TA = +85°C
MAX9993 toc15
INPUT P
1dB
(dBm)
INPUT P1dB vs. RF FREQUENCY
LOW-SIDE INJECTION
RF FREQUENCY (MHz)
VCC = 4.75V
VCC = 5.0VVCC = 5.25C
INPUT P1dB vs. RF FREQUENCY
LOW-SIDE INJECTION
MAX9993 toc14
INPUT P
1dB
(dBm)
PLO = 0dBm
PLO = +3dBm, +6dBm
RF FREQUENCY (MHz)
INPUT P1dB vs. RF REQUENCY
LOW-SIDE INJECTION
MAX9993 toc13
RF FREQUENCY (MHz)
INPUT P
1dB
(dBm)
TA = -40°C
TA = +85°CTA = +25°C
INPUT IP3 vs. RF FREQUENCY
HIGH-SIDE INJECTION
MAX9993-12
RF FREQUENCY (MHz)
INPUT IP3 (dBm)
TA = +85°CTA = +25°C
TA = -40°C
INPUT IP3 vs. RF FREQUENCY
LOW-SIDE INJECTION
MAX9993-11
RF FREQUENCY (MHz)
INPUT IP3 (dBm)
VCC = 5.25V
VCC = 5.0VVCC = 4.75V
INPUT IP3 vs. RF FREQUENCY
LOW-SIDE INJECTION
MAX9993-10
RF FREQUENCY (MHz)
INPUT IP3 (dBm)
PLO = +6dBm
PLO = +3dBm
PLO = 0dBm
Typical Operating Characteristics (continued)
(MAX9993 EV Kit, VCC= 5.0V, PRF= -5dBm, PLO= +3dBm, LO is low-side injected for a 200MHz IF, TA= +25°C. For high-side LO
injection curves, LO frequency is beyond maximum specified range, and is shown for completeness.)
MAX9993
High-Linearity 1700MHz to 2200MHz Down-
Conversion Mixer with LO Buffer/Switch
RF-TO-IF ISOLATION vs. RF FREQUENCY
MAX9993 toc27
RF-TO-IF ISOLATION (dB)
LO FREQUENCY (MHz)
VCC = +4.75V, +5.0V, +5.25V
RF FREQUENCY (MHz)
RF-TO-IF ISOLATION vs. RF FREQUENCY
MAX9993 toc26
RF-TO-IF ISOLATION (dB)
LO FREQUENCY (MHz)
PLO = 0dBm, +3dBm, +6dBm
RF FREQUENCY (MHz)
RF-TO-IF ISOLATION vs. FREQUENCY
MAX9993 toc25
RF-TO-IF ISOLATION (dB)
LO FREQUENCY (MHz)
TA = +85°C
TA = -40°C
TA = +25°C
RF FREQUENCY (MHz)
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX9993 toc24
LO LEAKAGE (dBm)
IF PORT
TERMINATED IN 50Ω
PLO = +6dBm
PLO = +3dBm
LO FREQUENCY (MHz)
PLO = 0dBm
MAX9993 toc23
LO FREQUENCY (MHz)
LO LEAKAGE (dBm)
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
VCC = 4.75V
VCC = 5.0V
VCC = 5.25V
MAX9993 toc22
LO FREQUENCY (MHz)
LO LEAKAGE (dBm)
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
PLO = +3dBm
PLO = +6dBm
PLO = 0dBm
MAX9993 toc21
LO FREQUENCY (MHz)
LO LEAKAGE (dBm)
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
TA = -40°C
TA = +25°C
TA = +85°C
MAX9993 toc20
LO SWITCH ISOLATION vs. RF FREQUENCY
HIGH-SIDE INJECTION
LO SWITCH ISOLATION (dB)
RF FREQUENCY (MHz)
PLO1 = PLO2 = +3dBm
ΔfLO = 1MHz
TA = +85°C
TA = +25°C
TA = -40°C
MAX9993 toc19
LO SWITCH ISOLATION vs. RF FREQUENCY
LOW-SIDE INJECTION
LO SWITCH ISOLATION (dB)
RF FREQUENCY (MHz)
VCC = 4.75, 5.00, 5.25V
PLO1 = PLO2 = +3dBm
ΔfLO = 1MHz
Typical Operating Characteristics (continued)
(MAX9993 EV Kit, VCC= 5.0V, PRF= -5dBm, PLO= +3dBm, LO is low-side injected for a 200MHz IF, TA= +25°C. For high-side LO
injection curves, LO frequency is beyond maximum specified range, and is shown for completeness.)

Partno	Mfg	Dc	Qty	Available	Descript
MAX9993ETP+	MAXIN	N/a	206	avai	High-Linearity 1700MHz to 2200MHz Down-Conversion Mixer with LO Buffer/Switch
MAX9993ETP+T	MAXIM	N/a	2500	avai	High-Linearity 1700MHz to 2200MHz Down-Conversion Mixer with LO Buffer/Switch