MAX8890ETCAAA+-MAX8890ETCAKM-T-MAX8890ETCDDD+-MAX8890ETCDDD+T-MAX8890ETCJJJ Fast Delivery |IC PHOENIX CO.,LIMITED

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MAX8890ETCAAA+-MAX8890ETCAKM-T-MAX8890ETCDDD+-MAX8890ETCDDD+T-MAX8890ETCJJJ
Integrated Cellular RF-Section Power-Management IC
neral DescriptionThe MAX8890 is a power-management IC intended for
cellular handsets using a single lithium-ion (Li+) cell
battery with input voltages from +2.5V to +5.5V. The IC
contains three identical, low-noise, low-dropout (LDO)
linear regulators to provide all of the supply voltage
requirements for the RF portion of the handset.
The first LDO is intended to power the transmitter,
receiver, and synthesizer. The second LDO is intended
to power the TCXO, and high-power voltage-controlled
oscillators (VCOs). The third LDO is intended to power
the UHF offset VCO.
Each LDO has its own individual enable (ON/OFF) con-
trol to maximize design flexibility. The reference is pow-
ered on if any of the enable inputs (EN1, EN2, EN3) are
logic high. The high-accuracy output voltage of each
LDO is preset at an internally trimmed voltage (1.8V to
3.3V in 50mV increments). Each LDO is capable of sup-
plying 100mA with a low 50mV dropout and is opti-
mized for low noise and high crosstalk-isolation.
Designed with internal P-channel MOSFET pass transis-
tors, the MAX8890’s low 180μA operating supply cur-
rent is independent of load.
Other features include short-circuit and thermal-over-
load protection. The MAX8890 is available in a com-
pact, high-power, 12-pin 4mm ✕4mm QFN package
with a metal pad on the underside.
Applications
Cellular Handsets
Single-Cell Li+ Systems
3-Cell NiMH, NiCD, or Alkaline Systems
Personal Digital Assistants (PDAs)atureThree 100mA Low-Dropout Linear RegulatorsLow 50mV Dropout Voltage at 100mA±1% Output Voltage Accuracy Over TemperaturePreset 1.8V to 3.3V Output Voltages
(in 50mV Increments)Low 45μVRMSOutput Voltage NoiseLow 180μA Operating Supply Current2.5V to 5.5V Input Voltage Range67dB PSRR10μVP-PChannel-to-Channel CrosstalkShort-Circuit ProtectionThermal-Overload Protection0.01μA Shutdown CurrentTiny 12-Pin 4mm x 4mm QFN Packagentegrated Cellular RF-Section
Power-Management I
Ordering Information
19-2075; Rev 2; 10/02
Standard Versions table and Pin Configuration appear at
end of data sheet.
PARTTEMP RANGEPIN PACKAGE
MAX8890ETCxyz*-40°C to +85°C12 (4mm x 4mm) QFN
*Each preset output voltage of these devices is factory
trimmed to one of ten voltages. Replace “xyz” with the letters
corresponding to the desired output voltages (see Standard
Preset Output Voltage Suffixes table), where the three letter
suffix corresponds to the following output voltages: “x” =
VOUT1, “y” = VOUT2, and “z” = VOUT3.
Note:There are five standard versions available (see Standard
Versions table). Sample stock is generally held on standard
versions only. Standard versions have an order increment
requirement of 2500 pieces. Nonstandard versions have an
order increment requirement of 10,000 pieces. Contact the
factory for availability of nonstandard versions.
SUFFIXOUTPUT
VOLTAGE (V)SUFFIXOUTPUT
VOLTAGE (V)3.30H2.753.00J2.702.90K2.502.85L2.002.80M1.80andard Preset Output
Voltage Suffixes
*Nonstandard output voltages between 1.80V and 3.30V are
available in 50mV increments.
OFF
IN1OUT1
IN2OUT2
IN3OUT3
EN1BP
EN2
EN3GND
MAX8890
INPUT
OUTPUT #1
OUTPUT #2
OUTPUT #3
Typical Operating Circuit
ntegrated Cellular RF-Section Power-Management IC
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(VIN_ = 3.6V, EN_ = IN_, CIN= 6.8μF, COUT_ = 2.2μF, CBP= 0.01μF, all ceramic capacitors TA= 0°C to +85°C, unless otherwise
noted. Typical values are at TA= +25°C.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Note A:As long as the maximum continuous power dissipation rating is not exceeded, the output can be shorted indefinitely.
IN_, EN_ to GND.......................................................-0.3V to +6V
OUT_, BP to GND......................................-0.3V to (VIN_ + 0.3V)
Output Short-Circuit Protection (Note A).......................indefinite
Continuous Power Dissipation (TA= +70°C)
12-Pin 4 x 4 QFN (derate 16.9mW/°C above +70°C).......1349mW
Operating Temperature Range...........................-40°C to +85°C
Junction Temperature......................................................+150°C
Storage Temperature Range.............................-65°C to +150°C
Lead Temperature (soldering, 10s).................................+300°C
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITS
GENERAL
Input VoltageVIN_2.55.5V
Input Undervoltage Lockout
ThresholdVUVLORising and falling edge2.102.252.45V
Input Undervoltage Hysteresis45mV
SUPPLY CURRENT
Quiescent Supply CurrentIQIOUT_ = 0180330μA
Shutdown Supply CurrentEN_ = OUT_ = GND0.0110μA
LINEAR REGULATORS
TA = +85°C-1+1
Output Voltage AccuracyVOUT_
VIN_ = 0.5V + the
highest of
(VOUT1, VOUT2, or
VOUT3),
IOUT_ = 1mA to
100mA
TA = 0°C +85°C-2+2
Current LimitILIMOUT_ = GND120250500mA
Output Pulldown ResistanceROUT_EN_ = GND358kΩ
IOUT_ = 1mA1
IOUT_ = 50mA25Dropout Voltage (Note 1)VIN_ -
VOUT_IOUT_ = 100mA50100
Line Regulation
VIN_ = (VOUT_+ 0.1V) to 5.5V for VOUT_ ≥
2.4V, or VIN_ = 2.5V to 5.5V for VOUT_ <
2.4V, IOUT = 1mA
-0.15+0.15%/V
Output Voltage Noise10Hz to 100kHz, COUT_ = 10μF ceramic,
VOUT_ = 2.8V, IOUT_ = 10mA45μVRMS
Output Voltage PSRR100Hz, COUT_ = 2.2μF ceramic,
IOUT_ = 10mA67dB
Channel-to-Channel Isolation10kHz, COUT_ = 2.2μF ceramic,
IOUT_ = 10mA64dB
ntegrated Cellular RF-Section Power-Management IC
ELECTRICAL CHARACTERISTICS
(VIN_ = 3.6V, EN_ = IN_, CIN= 6.8μF, COUT_ = 2.2μF, CBP= 0.01μF, all ceramic capacitors TA= -40°C to +85°C, unless otherwise
noted.) (Note 2)
ELECTRICAL CHARACTERISTICS (continued)
(VIN_ = 3.6V, EN_ = IN_, CIN= 6.8μF, COUT_ = 2.2μF, CBP= 0.01μF, all ceramic capacitors TA= 0°C to +85°C, unless otherwise
noted. Typical values are at TA= +25°C.)
Note 1:The dropout voltage is defined as VIN_ - VOUT_, when VOUT_ is 100mV below the set output voltage (the value of VOUT_ for
VIN_ = VOUT_ + 500mV). Since the minimum input voltage range is 2.5V, this specification is only meaningful when the set
output voltage exceeds 2.7V (VOUT_(NOM)≥2.7V).
Note 2:Specifications to -40°C are guaranteed by design, not production tested.
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITS
ENABLE LOGIC CONTROL
EN_ Input ThresholdVEN_2.5V ≤ VIN_ ≤ 5.5V0.41.6V
EN_ Input Bias CurrentIEN_VEN_ = 5.5V or 0, TA = +85°C-1+1μA
THERMAL PROTECTION
Thermal-Shutdown TemperatureTSHDNRising temperature160°C
Thermal-Shutdown HysteresisΔTSHDN15°C
PARAMETERSYMBOLCONDITIONSMINMAXUNITS
GENERAL
Input VoltageVIN_2.55.5V
Input Undervoltage Lockout
ThresholdVUVLORising and falling edge2.102.45V
SUPPLY CURRENT
Quiescent Supply CurrentIQIOUT_ = 0330μA
Shutdown Supply CurrentEN_ = OUT_ = GND10μA
LINEAR REGULATORS
Output Voltage AccuracyVOUT_VIN_ = 0.5V + the highest of (VOUT1, VOUT2,
or VOUT3), IOUT_ = 1mA to 100mA-2+2%
Current LimitILIMOUT_ = GND110500mA
Output Pulldown ResistanceROUT_EN_ = GND38kΩ
Dropout VoltageVIN_ -
VOUT_IOUT_ = 100mA (Note 1)100mV
Line Regulation
VIN_ = (VOUT_+ 0.1V) to 5.5V for VOUT_ ≥
2.4V, or VIN_ = 2.5V to 5.5V for VOUT_ <
2.4V, IOUT = 1mA
-0.15+0.15%/V
ENABLE LOGIC CONTROL
EN_ Input ThresholdVEN_2.5V ≤ VIN_ ≤ 5.5V0.41.6V
EN_ Input Bias CurrentIEN_VEN_ = 5.5V or 0, TA = +85°C-1+1μA
ntegrated Cellular RF-Section Power-Management IC
Typical Operating Characteristics
(Circuit of Figure 1, MAX8890ETCGGG, VIN= 3.3V, EN_ = IN_, TA= +25°C, unless otherwise noted.)
OUTPUT VOLTAGE
vs. INPUT VOLTAGE
AX8890 toc01
INPUT VOLTAGE (V)
(V
IOUT = NO LOAD
OUTPUT VOLTAGE
vs. LOAD CURRENT
AX8890 toc02
LOAD CURRENT (mA)
(V
OUTPUT VOLTAGE
vs. TEMPERATURE
AX8890 toc03
TEMPERATURE (°C)
(V
IOUT = 100mA40206080100
DROPOUT VOLTAGE
vs. LOAD CURRENT
X8890 toc04
LOAD CURRENT (mA)
(m
TA = -40°C
TA = +25°C
TA = +85°C
GROUND-PIN CURRENT
vs. INPUT VOLTAGE
X8890 toc05
INPUT VOLTAGE (V)
(μ
IOUT = NO LOAD
IOUT1 = 100mA
ONLY ONE OUTPUT ENABLED
(EN1 = IN, EN2 = EN3 = GND)
GROUND-PIN CURRENT
vs. LOAD CURRENT
X8890 toc06
LOAD CURRENT (mA)
(μ
ONLY ONE OUTPUT ENABLED
(EN1 = IN, EN2 = EN3 = GND)
GROUND-PIN CURRENT
vs. TEMPERATURE
X8890 toc07
TEMPERATURE (°C)
(μ
IOUT1 = 100mA
ONLY ONE OUTPUT ENABLED
(EN1 = IN, EN2 = EN3 = GND)
POWER-SUPPLY REJECTION RATIO
AX8890 toc08
FREQUENCY (kHz)
(d
CIN = 1μF + 0.1μF
IOUT = 10mA
CHANNEL-TO-CHANNEL ISOLATION
AX8890 toc09
FREQUENCY (kHz)
(d
LOW-IMPEDANCE INPUT
IOUT1 = 100mA SINUSOIDAL LOAD
IOUT3 = 10mA
ntegrated Cellular RF-Section Power-Management I
20μs/div
LOAD TRANSIENT
MAX8890 toc10
A. IOUT_ = 1mA to 100mA, 50mA/div
B. VOUT_ = 2.8V, 20mV/div
VIN = 3.3V (VOUT_ +500mV)
20μs/div
LOAD TRANSIENT NEAR DROPOUT
MAX8890 toc11
A. IOUT_ = 1mA to 100mA, 50mA/div
B. VOUT_ = 2.8V, 20mV/div
VIN = 2.9V (VOUT_ + 100mV)
40μs/div
LINE TRANSIENT RESPONSE
MAX8890 toc12
A. VIN = 3.5V to 4.0V, 200mV/div
B. VOUT_ = 2.8V, 2mV/div
IOUT = 100mA
4.0V
3.5V
2.8V
5ms/div
STARTUP WAVEFORM
(CBP = 0.1μF)
MAX8890 toc15
A. VIN = 0 to 3.3V, 5V/div
B. VOUT_ = 2.8V, 2V/div
C. VBP = 1.25V, 1V/div
ROUT_ = 28Ω (100mA)
20μs/div
STARTUP WAVEFORM
(CBP = 0.01μF)
MAX8890 toc14
A. VIN = 0 to 3.3V, 5V/div
B. VOUT_ = 2.8V, 2V/div
C. VBP = 1.25V, 1V/div
ROUT_ = 28Ω (100mA)
CROSSTALK VOLTAGE
AX8890 toc13
FREQUENCY (kHz)
(μ
LOW-IMPEDANCE INPUT
IOUT1 = 100mA SINUSOIDAL LOAD
IOUT3 = 10mA
Typical Operating Characteristics (continue
(Circuit of Figure 1, MAX8890ETCGGG, VIN= 3.3V, EN_ = IN_, TA= +25°C, unless otherwise noted.)
ntegrated Cellular RF-Section Power-Management IC
Typical Operating Characteristics (continued)
(Circuit of Figure 1, MAX8890ETCGGG, VIN= 3.3V, EN_ = IN_, TA= +25°C, unless otherwise noted.)
20μs/div
ENABLE WAVEFORM
(1ST OUTPUT)
MAX8890 toc16
A. VEN1 = 0 to 3.3V, 5V/div
B. VOUT1 = 2.8V, ROUT1 = 28Ω (100mA), 2V/div
C. VBP = 1.25V, 1V/div
D. IIN, 200mA/div
VIN = 3.3V, EN2 = EN3 = GND, CBP = 0.01μF
20μs/div
ENABLE WAVEFORM
(2ND OUTPUT)
MAX8890 toc17
A. VEN2 = 0 to 3.3V, 5V/div
B. VOUT2 = 2.8V, ROUT2 = 28Ω (100mA), 2V/div
C. VBP = 1.25V, 1V/div
D. IIN, 200mA/div
VIN = 3.3V, EN1 = IN, EN3 = GND, CBP = 0.01μF
Pin Description
PINNAMEFUNCTIONIN1Regulator 1 Input. Supply voltage can range from 2.5V to 5.5V. Bypass with a capacitor to GND (see
Capacitor Selection and Regulator Stability section).IN2Regulator 2 Input. Supply voltage can range from 2.5V to VIN1. Bypass with a capacitor to GND (see
Capacitor Selection and Regulator Stability section).OUT2Regulator 2 Output. Sources up to 100mA. Bypass with a 2.2μF ceramic capacitor to GND.EN1Active-High Enable Input for Regulator 1. A logic low shuts down the first linear regulator. In shutdown,
OUT1 is pulled low through an internal 5kΩ resistor. Connect to IN1 for normal operation.EN2Active-High Enable Input for Regulator 2. A logic low shuts down the second linear regulator. In
shutdown, OUT2 is pulled low through an internal 5kΩ resistor. Connect to IN2 for normal operation.EN3Active-High Enable Input for Regulator 3. A logic low shuts down the third linear regulator. In
shutdown, OUT3 is pulled low through an internal 5kΩ resistor. Connect to IN3 for normal operation.BP1.25V Voltage Reference Bypass Pin. Connect a 0.01μF ceramic bypass capacitor from BP to GND to
minimize the output noise. Make no other connection to this pin.GNDGround. Connect both ground pins together externally, as close to the IC as possible.IN3Regulator 3 Input. Supply voltage can range from 2.5V to VIN1. Bypass with a capacitor to GND (see
Capacitor Selection and Regulator Stability section).OUT3Regulator 3 Output. Sources up to 100mA. Bypass with a 2.2μF ceramic capacitor to GND.GNDGround. Connect both ground pins together externally, as close to the IC as possible.OUT1Regulator 1 Output. Sources up to 100mA. Bypass with a 2.2μF ceramic capacitor to GND.GND
Gr ound . T H E EXPO SED PA D A N D A L L F O U R C O R N ER T A B S O N T H E Q F N PA C K A G E A R E
IN T ER N A L L Y C O N N EC T ED TO G R O U N D . The exp osed p ad functi ons as a heatsi nk. S ol d er to a l ar g ead or to the ci r cui t b oar d g r ound p l ane to m axi m i ze p ow er d i ssi p ati on. D o not use as d evi ce g r ound .

Partno	Mfg	Dc	Qty	Available	Descript
MAX8890ETCAAA+ \|MAX8890ETCAAA	MAXIM	N/a	2000	avai	Integrated Cellular RF-Section Power-Management IC
MAX8890ETCAKM-T \|MAX8890ETCAKMT	MAXIM	N/a	1500	avai	Integrated Cellular RF-Section Power-Management IC
MAX8890ETCDDD+T \|MAX8890ETCDDDT	MAXIM	N/a	2600	avai	Integrated Cellular RF-Section Power-Management IC
MAX8890ETCJJJ	MAXIM	N/a	28	avai	Integrated Cellular RF-Section Power-Management IC
MAX8890ETCDDD+	MAXIM	N/a	1500	avai	Integrated Cellular RF-Section Power-Management IC