MAX8858ETJ+T ,Smallest, All-Internal MOSFET, 6-Channel DSC PMIC in a 5mm x 5mm TQFNFeaturesThe MAX8858 PMIC provides a complete power-supply ♦ 95% Efficient Synchronous-Rectified DC- ..
MAX8860EUA18+ ,Low-Dropout, 300mA Linear Regulator in µMAXMAX886019-1422; Rev 2; 1/01Low-Dropout, 300mA Linear Regulator in µMAX
MAX8860EUA18+T ,Low-Dropout, 300mA Linear Regulator in µMAXMAX886019-1422; Rev 2; 1/01Low-Dropout, 300mA Linear Regulator in µMAX
MAX8860EUA25 ,Low-Dropout / 300mA Linear Regulator in MAXELECTRICAL CHARACTERISTICS(V = +3.6V, C = 33nF, T = -40°C to +85°C, unless otherwise noted. Typical ..
MAX8860EUA25 ,Low-Dropout / 300mA Linear Regulator in MAXfeatures include a 10nA, logic-controlled shut- Small, Space-Saving µMAX Package down mode, short ..
MAX8860EUA25+ ,Low-Dropout, 300mA Linear Regulator in µMAXApplicationsWireless HandsetsDSP Core PowerOrdering InformationPCMCIA CardsPIN- VOUTPART TEMP RANGE ..
MB86626 , KeyWave AFE ADSL Analog Front End
MB86831 ,Microprocessor SPARClite CMOSapplications. Conforming to the SPARC * architecture, the MB86830 series is upward code-compatible ..
MB86831 ,Microprocessor SPARClite CMOSfeatures of the MB86830 series achieves high levels of speed, flexibility, and efficiency, making i ..
MB86831-80PFV ,32-bit Embedded Controllerapplications. Conforming to the SPARC * architecture, the MB86830 series is upward code-compatible ..
MB86833 ,Microprocessor SPARClite CMOSfeatures of the MB86830 series achieves high levels of speed, flexibility, and efficiency, making i ..
MB86836 ,Microprocessor SPARClite CMOSapplications. Conforming to the SPARC * architecture, the MB86830 series is upward code-compatible ..
MAX8858ETJ+T
Smallest, All-Internal MOSFET, 6-Channel DSC PMIC in a 5mm x 5mm TQFN
General DescriptionThe MAX8858 PMIC provides a complete power-supply
solution for digital still cameras (DSCs) and digital video
cameras (DVCs). The MAX8858 improves performance,
component count, and board space utilization compared
to currently available solutions for two AA cell and dual-
battery designs. On-chip power MOSFETs provide up to
95% efficiency for critical power supplies. The CCD
inverter can operate directly from two AA/NiMH batteries
without the use of any additional external components.Step-up synchronous-rectified DC-DC converter
(SU). The MAX8858 is bootstrapped from VVSU.MAIN synchronous-rectified step-up DC-DC converter
(M) with active discharge for DSP I/O supply voltage.SDZ synchronous-rectified step-down DC-DC con-
verter (SDZ) with active discharge for DSP DDR
supply voltage.Low-voltage (down to 1V) synchronous-rectified
step-down DC-DC converter (SD) with active dis-
charge for DSP core supply voltage.High-voltage step-up DC-DC converter (CCDBST)
for CCD imagers or positive LCD bias supplies.Transformerless inverting DC-DC converter (CCDINV)
with active discharge for CCD imagers or negative
LCD bias supplies. This converter can connect
directly to two AA batteries.Individual ON_ inputs provide independent on/off control
for the SU, CCDBST, and CCDINV converters, while dual-
function inputs allow independent on/off control or power-
up sequencing of the MAIN, SDZ, and SD converters.
The MAX8858 is available in a 5mm x 5mm x 0.8mm,
32-pin thin QFN package and operates over the -40°C
to +85°C extended temperature range.
ApplicationsDSCs and DVCs
PDAs and Portable Media Players
Features95% Efficient Synchronous-Rectified DC-DC
ConvertersUp to 90% Efficient Boost-Buck OperationUp to 85% Efficient, High-Voltage DC-DC
ConvertersTransformerless Inverting Converter with Active
Discharge for CCDPreset Power-Up Sequencing for MAIN, SDZ, and
SD ConvertersInverter Operates Directly from Two AA BatteriesInternal Compensation on All ChannelsTrue Shutdown™on All Step-Up ConvertersOverload ProtectionStartup into Short ProtectionSoft-Start for Controlled Inrush Current100% Duty Cycle on Step-Down Converters2MHz ±5% Switching Frequency0.1µA Shutdown Supply CurrentAll Internal Power MOSFETs
MAX8858
Highly Efficient, All-Internal MOSFET, 6-Channel
PMIC for 2AA Digital Camera SystemsMAX8858
TOP VIEW
ONSD/EN1
GND
FBZ
ONZ/EN2
FBINV
FBM
FBSUVSUGNDONM/SEQREFFBBST
PVSD672422201918
LXSD
PVM
PVBST
PVINV
OUTINV
LXINV
FBSD
ONSU10LXMPVZ9LXMLXZ
PVSU15SWBSTLXSU16LXBST
ONINV
ONBST
LXSU
THIN QFN-EP5mm x 5mmEP = EXPOSED PAD
Pin Configuration19-4102; Rev 0; 5/08
Ordering Information
PARTTEMP RANGEPIN-PACKAGEMAX8858ETJ+-40°C to +85°C32 Thin QFN-EP*
+Denotes a lead-free package.
*EP =Exposed pad.
PVBSTSU STEP-UP
ONSUMAIN STEP-UP
SDZ STEP-DOWN
CCDBST
CCDINV
ONM/SEQ
ONSD/EN1
ONBST
ONINV
ONZ/EN2
SD STEP-DOWN
VSU 5V
VMAIN 3.3V
VSD 1.8V
VSDZ 2.5V
VCCDBST +15V
VCCDINV -7.5V
INPUT
0.9V TO 5.5V
MAX8858
Typical Operating Circuit
MAX8858
Highly Efficient, All-Internal MOSFET, 6-Channel
PMIC for 2AA Digital Camera Systems
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS(VPVBST= VPVINV= VPVSD= VPVZ= 2.4V, VPVM= 3.3V, VPVSU= VVSU= 5V, VEP= VGND= 0V, CREF= 0.22µF, TA= -40°C to +85°C.
Typical values are at TA= +25°C, unless otherwise noted.) (Note 2)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Note 1:LXSU and LXM have internal clamp diodes to PG_ (EP) and VPWR, where VPWR is the internal power node that is connect-
ed to the higher voltage of PVBST and PVSU or PVM, respectively. LXSD and LXZ have internal clamp diodes to PVSD and
PVZ, respectively, and PG_ (EP). LXINV has internal clamp diodes to PVINV and PG_(EP). Applications that forward bias
these diodes must be careful not to exceed the power dissipation limits of the device.
ON__, FB__, PV__, SU, REF to GND........................-0.3V to +6V
SWBST to GND......................................-0.3V to (VPVBST+ 0.3V)
LXSD, LXZ Current (Note 1)...........................................632.5mA
LXSU, LXM Current (Note 1)...............................................2.85A
LXINV to GND..........................(VPVINV- 22V) to (VPVINV+ 0.3V)
OUTINV to GND......................................-14V to (VPVINV+ 0.3V)
LXBST to GND........................................................-0.3V to +28V
EP (PG_) to GND...................................................-0.3V to +0.3V
Continuous Power Dissipation (TA= +70°C)
32-Pin TQFN, Single-Layer Board
(derate 21.3mW/°C above +70°C)............................1702mW
32-Pin TQFN, Multilayer Board
(derate 34.5mW/°C above +70°C)...........................2759mW
Operating Temperature Range...........................-40°C to +85°C
Junction Temperature......................................................+150°C
Storage Temperature Range.............................-65°C to +150°C
Lead Temperature (soldering, 10s).................................+300°C
PARAMETERCONDITIONSMINTYPMAXUNITS
GENERALInput Voltage Range(Note 3)0.95.5V
Minimum SU Startup Voltage1.21.5V
SU Step-Up Startup Frequency2MHz
VONSU = 0VTA = +25°C0.110Shutdown Supply CurrentVPVBST = 5.5VTA = +85°C0.1µA
Supply Current with SU Step-Up
Enabled
VONSU = 2.4V, IPVBST + IVSU (does not include switching
losses)4070µA
Supply Current with SU Step-Up
and SD Step-Down Enabled
VONSU = VONSD/EN1 = 2.4V, IPVBST + IVSU + IPVSD (does
not include switching losses)330500µA
Supply Current with SU Step-Up
and MAIN Step-Up Enabled
VONSU = VONM/SEQ = 2.4V, IPVBST + IVSU + IPVM (does
not include switching losses)330500µA
Supply Current with SU Step-Up
and SDZ Step-Down Enabled
VONSU = VONZ/EN2 = 2.4V, IPVBST + IVSU + IPVZ (does
not include switching losses)330500µA
Supply Current with SU Step-Up
and CCDBST Step-Up Enabled
VONSU = VONBST = 2.4V, IVSU + IPVBST (does not include
switching losses)600900µA
Supply Current with SU Step-Up
and CCDINV Inverter Enabled
VONSU = VONINV = 2.4V, IPVBST + IVSU + IPVINV (does
not include switching losses)550850µA
REFERENCE (REF)Reference Output VoltageIREF = 20µA1.241.251.26V
Reference Load Regulation10µA < IREF < 100µA310mV
Reference Line Regulation3.3V < (VPVSU = VVSU) < 5.5V05mV
MAX8858
Highly Efficient, All-Internal MOSFET, 6-Channel
PMIC for 2AA Digital Camera Systems
PARAMETERCONDITIONSMINTYPMAXUNITS
OSCILLATOR (OSC)SU, MAIN, SDZ, SD Switching
Frequency1.922.1MHz
SU, MAIN Step-Up Maximum
Duty Cycle85%
SDZ, SD Step-Down Maximum
Duty Cycle(Note 4)100%
CCDBST, CCDINV Switching
Frequency0.6340.6670.700MHz
CCDBST, CCDINV Maximum
Duty Cycle90%
SU STEP-UP DC-DC CONVERTERStep-Up Voltage Adjust Range3.35.0V
FBSU Regulation VoltageNo load0.9951.0151.025V
FBSU Load Regulation-7.5mV/A
FBSU Line Regulation-10mV/D
FBSU Input Leakage CurrentVFBSU = 1.01V-50-5+50nA
Idle Mode™ Trip Level(Note 5)50mA
LXSU Leakage CurrentVLXSU = 0V, 5V, VPVBST = 5V-50.1+5µA
n-Channel On-ResistanceILXSU = 190mA0.1Ω
p-Channel On-ResistanceILXSU = -190mA0.14Ω
n-Channel Current Limit2.02.32.6A
p-Channel Turn-Off Current10mA
Soft-Start IntervalFull load7.5ms
Overload Protection Fault Delay100ms
Startup into a Short CircuitFault timing30ms
MAIN STEP-UP DC-DC CONVERTERStep-Up Voltage Adjust Range3.3VVSUV
FBM Regulation VoltageNo load0.9951.0151.025V
FBM Load Regulation-7.5mV/A
FBM Line Regulation-10mV/D
FBM Input Leakage CurrentVFBM = 1.01V-50-5+50nA
Idle-Mode Trip Level(Note 5)50mA
LXM Leakage CurrentVLXM = 0V, 5V, VPVBST = 5V-50.1+5µA
n-Channel On-ResistanceILXM = 190mA0.1Ω
p-Channel On-ResistanceILXM = -190mA0.14Ω
PVM Pulldown Resistance306090Ω
n-Channel Current Limit2.02.32.6A
ELECTRICAL CHARACTERISTICS (continued)(VPVBST= VPVINV= VPVSD= VPVZ= 2.4V, VPVM= 3.3V, VPVSU= VVSU= 5V, VEP= VGND= 0V, CREF= 0.22µF, TA= -40°C to +85°C.
Typical values are at TA= +25°C, unless otherwise noted.) (Note 2)
MAX8858
Highly Efficient, All-Internal MOSFET, 6-Channel
PMIC for 2AA Digital Camera Systems
ELECTRICAL CHARACTERISTICS (continued)(VPVBST= VPVINV= VPVSD= VPVZ= 2.4V, VPVM= 3.3V, VPVSU= VVSU= 5V, VEP= VGND= 0V, CREF= 0.22µF, TA= -40°C to +85°C.
Typical values are at TA= +25°C, unless otherwise noted.) (Note 2)
PARAMETERCONDITIONSMINTYPMAXUNITSp-Channel Turn-Off Current10mA
Soft-Start IntervalFull load15ms
Overload Protection Fault Delay100ms
Startup into a Short CircuitFault timing30ms
SDZ STEP-DOWN DC-DC CONVERTERStep-Down Output Voltage Adjust
Range1VVSUV
FBZ Regulation VoltageNo load0.9951.0151.025V
FBZ Load Regulation-50mV/A
FBZ Line Regulation-10mV/D
FBZ Input Leakage CurrentVFBZ = 1.01V-50-5+50nA
Idle-Mode Trip Level(Note 5)50mA
LXZ Leakage CurrentVLXZ = 0V, 5V, VPVBST = 5V-50.1+5µA
n-Channel On-ResistanceILXZ = 190mA0.21Ω
p-Channel On-ResistanceILXZ = -190mA0.24Ω
LXZ Pulldown Resistance306090Ω
p-Channel Current Limit0.4250.50.575A
n-Channel Turn-Off Current10mA
Soft-Start Interval1.25ms
Overload Protection Fault Delay100ms
SD STEP-DOWN DC-DC CONVERTERSD Step-Down Output Voltage
Adjust Range1VVSUV
FBSD Regulation VoltageNo load0.9951.0151.025V
FBSD Load Regulation-60mV/A
FBSD Line Regulation-7mV/D
FBSD Input Leakage CurrentVFBSD = 1.01V-50-5+50nA
Idle-Mode Trip Level(Note 5)50mA
LXSD Leakage CurrentVLXSD = 0V, 5V, VPVBST = 5V-50.1+5µA
n-Channel On-ResistanceILXSD = 190mA0.21Ω
p-Channel On-ResistanceILXSD = -190mA0.24Ω
LXSD Pulldown Resistance306090Ω
p-Channel Current Limit0.4250.50.575A
n-Channel Turn-Off Current10mA
Soft-Start Interval2.5ms
Overload Protection Fault Delay100ms
CCDBST DC-DC CONVERTERCCDBST Ouput Voltage Adjust
RangeVPVBST18V
MAX8858
Highly Efficient, All-Internal MOSFET, 6-Channel
PMIC for 2AA Digital Camera Systems
ELECTRICAL CHARACTERISTICS (continued)(VPVBST= VPVINV= VPVSD= VPVZ= 2.4V, VPVM= 3.3V, VPVSU= VVSU= 5V, VEP= VGND= 0V, CREF= 0.22µF, TA= -40°C to +85°C.
Typical values are at TA= +25°C, unless otherwise noted.) (Note 2)
PARAMETERCONDITIONSMINTYPMAXUNITSFBBST Regulation VoltageNo load1.0051.021.035V
FBBST Load Regulation-15mV/A
FBBST Line Regulation-20mV/D
FBBST Input Leakage CurrentVFBBST = 1.01V-50-5+50nA
SWBST Leakage CurrentVSWBST = 0V-50.1+5µA
LXBST Leakage CurrentVLXBST = 28V-50.1+5µA
Load Switch On-ResistanceISWBST = 190mA0.09Ω
DMOS On-ResistanceILXBST = -190mA0.4Ω
SWBST Current Limit0.81.01.2A
SWBST Short-Circuit Current Limit1.11.31.6A
Soft-Start Interval7.5ms
Overload Protection Fault Delay100ms
CCDINV DC-DC CONVERTERCCDINV Output Voltage Adjust
Range
VPVINV
- 160V
FBINV Regulation VoltageNo load-100+10mV
FBINV Load Regulation23mV/A
FBINV Line Regulation20mV/
(D-0.5)
FBINV Input Leakage CurrentVFBINV = 0V-50-5+50nA
LXINV Leakage CurrentVLXINV = -14.5V, VPVINV = 5V-50.1+5µA
HVPMOS On-ResistanceILXINV = -190mA0.575Ω
HVPMOS Current Limit0.81.01.2A
OUTINV Discharge CurrentVLXINV = VOUTINV = -7.5V, ONINV = GND, VONSU = 2.4V50mA
OUTINV Input Leakge CurrentVOUTINV = -12V-50.1+5µA
Soft-Start Interval7.5ms
Overload Protection Fault Delay100ms
LOGIC INPUTS/OUTPUTSONSU Input-Low Level1.5V ≤ VPVSU = VVSU = VPVBST < 5.5V (Note 6)0.5V
ONSU Input-High Level1.5V ≤ VPVSU = VVSU = VPVBST < 5.5V, VH is the higher
of VPVSU and VPVBST (Note 6)
VH - 0.2V
(1.3V max)V
ONSD/EN1, ONZ/EN2,
ONM/SEQ, ONBST, ONINV
Input-Low Level
3.3V ≤ VPVSU = VVSU = VPVBST
(Note 7)0.5V
ONSD/EN1, ONZ/EN2,
ONM/SEQ, ONBST, ONINV
Input-High Level
3.3V ≤ VPVSU = VVSU = VPVBST
(Note 7)1.4V
MAX8858
Highly Efficient, All-Internal MOSFET, 6-Channel
PMIC for 2AA Digital Camera Systems
Note 2:Limits are 100% production tested at TA= +25°C. Limits over the operating temperature range are guaranteed by design
and characterization.
Note 3:Once the SU converter has reached regulation, the battery voltage can decay to 0.9V without loss of regulation.
Note 4:Guaranteed by design and characterization, not production tested.
Note 5:The idle-mode current threshold is the transition point between fixed-frequency PWM operation and idle-mode operation. Thespecification is given in terms of output load current for inductor values shown in Figure 1. For the step-up converter, the idle-
mode transition varies with input-to-output voltage ratio.
Note 6:Production tested at 1.5V. Guaranteed by design up to 5.5V.
Note 7:Production tested at 3.3V.
ELECTRICAL CHARACTERISTICS (continued)(VPVBST= VPVINV= VPVSD= VPVZ= 2.4V, VPVM= 3.3V, VPVSU= VVSU= 5V, VEP= VGND= 0V, CREF= 0.22µF, TA= -40°C to +85°C.
Typical values are at TA= +25°C, unless otherwise noted.) (Note 2)
PARAMETERCONDITIONSMINTYPMAXUNITSON_ Pulldown Resistance1MΩ
THERMAL-LIMIT PROTECTIONThermal Shutdown+165°C
Typical Operating Characteristics(VPVBST= VPVINV= VPVSD= 2.4V, VPVM= 3.3V, VPVSU= VPVZ= 5V, CREF= 0.22µF, TA= +25°C (circuit of Figure 1, unless otherwise
noted.)
VSU STEP-UP EFFICIENCY
vs. LOAD CURRENTMAX8858 toc01
LOAD CURRENT (mA)
EFFICIENCY (%)
VSU = 5V
VBATT =
5.5V
5.0V
4.2V
3.6V
3.0V
2.4V
1.8V
1.5V
VM STEP-UP EFFICIENCY
vs. LOAD CURRENTMAX8858 toc02
LOAD CURRENT (mA)
EFFICIENCY (%)
ONLY VSU AND VM ON
VSU = 5V, VM = 3.3V
VBATT =
3.0V
2.7V
2.4V
1.8V
1.5V
VSD STEP-DOWN EFFICIENCY
vs. LOAD CURRENTMAX8858 toc03
LOAD CURRENT (mA)
EFFICIENCY (%)
ONLY VSU AND VSD ON
VSU = 5V, VSD = 1.8V
VBATT =
5.5V
5.0V
4.2V
3.6V
3.0V
2.4V
2.0V
MAX8858
Highly Efficient, All-Internal MOSFET, 6-Channel
PMIC for 2AA Digital Camera Systemsypical Operating Characteristics (continued)(VPVBST= VPVINV= VPVSD= 2.4V, VPVM= 3.3V, VPVSU= VPVZ= 5V, CREF= 0.22µF, TA= +25°C (circuit of Figure 1, unless otherwise
noted.)
VSDZ STEP-DOWN EFFICIENCY
vs. LOAD CURRENTMAX8858 toc04
LOAD CURRENT (mA)
EFFICIENCY (%)
ONLY VSU AND VZ ON
VSU = 5V, VZ = 2.5V
VBATT =
5.5V
5.0V
4.2V
3.6V
3.0V
2.7V
PVZ = PVBST
VCCDINV INVERTER EFFICIENCY
vs. LOAD CURRENTMAX8858 toc05
LOAD CURRENT (mA)1100
ONLY VSU AND VCCDINV ON
VSU = 5V, VCCDINV = -7.5V
VBATT =
5.5V
5.0V
4.2V
3.6V
3.0V
2.4V
1.5V
EFFICIENCY (%)
VCCDBST STEP-UP EFFICIENCY
vs. LOAD CURRENT
MAX8858 toc06
LOAD CURRENT (mA)1100
ONLY VSU AND VCCDBST ON
VSU = 5V, VCCDBST = 15V
VBATT =
5.5V
5.0V
4.2V
3.6V
3.0V
2.4V
1.8V
1.5V
EFFICIENCY (%)
VSD STEP-DOWN EFFICIENCY
vs. LOAD CURRENT
MAX8858 toc07
LOAD CURRENT (mA)
EFFICIENCY (%)
ONLY VSU AND VSD ON
VSU = 5V, VSD = 1.2V
VBATT =
5.0V
4.2V
3.6V
3.0V
2.4V
1.8V
1.5V
VSDZ BOOST-BUCK EFFICIENCY
vs. LOAD VOUT = 2.5V PVZ = PSUMAX8858 toc08
ILOAD (A)
EFFICIENCY (%)
VIN = 4.2V
VIN = 5V
VIN = 3.6V
VIN = 3.0V
VIN = 2.4V
VIN = 1.8V
VIN = 1.5V0
NO-LOAD SUPPLY CURRENT
vs. BATTERY VOLTAGE
MAX8858 toc09
BATTERY VOLTAGE (V)
NO-LOAD SUPPLY CURRENT (mA)
PVBST = PVINV = PVSD = BATT, PVZ = SU
ONLY VSU, VCCDBST, AND VCCDINV ON
ONLY VSU, VM, VSDZ, AND VSD ON
ONLY VSU, VM, AND VSD ON
ONLY VSU ON
MINIMUM STARTUP VOLTAGE
vs. LOAD CURRENTMAX8858 toc10
MINIMUM STARTUP VOLTAGE (V)
VMAIN
VCCDINV
VCCDBST
VSU
400ns/div
VSU STEP-UP IDLE-MODE
SWITCHING WAVEFORMS2V/div
10mV/div
200mA/div
MAX8858 toc11
VLX
ILX
VOUT
AC-
COUPLEDIOUT = 10mA
400ns/div
VSU STEP-UP HEAVY LOAD
SWITCHING WAVEFORMS2V/div
10mV/div
200mA/div
MAX8858 toc12
VLX
ILX
VOUT
AC-
COUPLEDIOUT = 300mA
MAX8858
Highly Efficient, All-Internal MOSFET, 6-Channel
PMIC for 2AA Digital Camera Systemsypical Operating Characteristics (continued)(VPVBST= VPVINV= VPVSD= 2.4V, VPVM= 3.3V, VPVSU= VPVZ= 5V, CREF= 0.22µF, TA= +25°C (circuit of Figure 1, unless otherwise
noted.)
1μs/div
VCCDBST STEP-UP
SWITCHING WAVEFORMS10V/div
50mV/div
500mA/div
MAX8858 toc13
VLX
ILX
VOUT
AC-COUPLED
IOUT = 30mA
1μs/div
VCCDINV INVERTER
SWITCHING WAVEFORMS5V/div
50mV/div
200mA/div
MAX8858 toc14
VLX
ILX
VOUT
AC-COUPLED
IOUT = 100mA
40μs/div
VSU STEP-UP
STARTUP WAVEFORMS2V/div
5V/div
5V/div
500mA/div
MAX8858 toc15
VONSU
VSU
VLXSU
ILX
ONLY VSU ON, IOUT = 100mA
400μs/div
VMAIN STEP-UP
STARTUP WAVEFORMS2V/div
2V/div
2V/div
500mA/div
MAX8858 toc16
VONM
VMAIN
VLXM
ILX
IOUT = 100mA
400μs/div
VSDZ STEP-DOWN
STARTUP WAVEFORMS2V/div
2V/div
2V/div
200mA/div
MAX8858 toc17
VONZ
VLXZ
ILX
IOUT = 200mA
1ms/div
VSD STEP-DOWN
STARTUP WAVEFORMS2V/div
2V/div
2V/div
200mA/div
MAX8858 toc18
VONZ
VLXZ
ILX
IOUT = 250mA
MAX8858
Highly Efficient, All-Internal MOSFET, 6-Channel
PMIC for 2AA Digital Camera Systemsypical Operating Characteristics (continued)(VPVBST= VPVINV= VPVSD= 2.4V, VPVM= 3.3V, VPVSU= VPVZ= 5V, CREF= 0.22µF, TA= +25°C (circuit of Figure 1, unless otherwise
noted.)
VSU OUTPUT VOLTAGE
vs. LOAD CURRENTMAX8858 toc19
LOAD CURRENT (mA)
OUTPUT VOLTAGE (V)
VSU = 5V
VBATT =
5.0V
4.2V
3.6V
3.0V
2.4V
1.8V
1.5V
VSD OUTPUT VOLTAGE
vs. LOAD CURRENTMAX8858 toc20
LOAD CURRENT (mA)
OUTPUT VOLTAGE (V)
ONLY VSU AND VSD ON
VSU = 5V, VSD = 1.8V
VBATT =
5.5V
5.0V
4.2V
3.6V
3.0V
2.4V
2.0V
VCCDBST OUTPUT VOLTAGE
vs. LOAD CURRENTMAX8858 toc21
LOAD CURRENT (mA)
OUTPUT VOLTAGE (V)
ONLY VSU AND VCCDBST ON
VSU = 5V, VCCDBST = 15V
VBATT =
5.5V
5.0V
4.2V
3.6V
3.0V
2.4V
1.8V
1.5V
REFERENCE VOLTAGE
vs. LOAD CURRENT OVER TEMPERATURE
MAX8858 toc22
LOAD CURRENT (μA)
REFERENCE VOLTAGE (V)
TA = +85°C
TA = -25°C
TA = -40°C
TA = +50°C
TA = +25°C
TA = -40°C
OSCILLATOR FREQUENCY
vs. TEMPERATURE
MAX8858 toc23
TEMPERATURE (°C)
OSCILLATOR FREQUENCY (MHz)
SU, MAIN, SDZ, SD
CCDBST, CCDINV
1ms/div
VSU STEP-UP
LOAD TRANSIENT RESPONSE200mA/div
100mV/div
MAX8858 toc24
VSU
AC RIPPLE
IOUT
10mA
500mA
10mA
MAX8858
Highly Efficient, All-Internal MOSFET, 6-Channel
PMIC for 2AA Digital Camera Systemsypical Operating Characteristics (continued)(VPVBST= VPVINV= VPVSD= 2.4V, VPVM= 3.3V, VPVSU= VPVZ= 5V, CREF= 0.22µF, TA= +25°C (circuit of Figure 1, unless otherwise
noted.)
1ms/div
VM STEP-UP
LOAD TRANSIENT RESPONSE200mA/div
100mV/div
MAX8858 toc25
AC RIPPLE
IOUT
10mA
500mA
10mA
1ms/div
VSD STEP-DOWN
LOAD TRANSIENT RESPONSE100mA/div
50mV/div
MAX8858 toc26
VSD
AC RIPPLE
IOUT
10mA
250mA
10mA
1ms/div
VSDZ STEP-DOWN
LOAD TRANSIENT RESPONSE100mA/div
50mV/div
MAX8858 toc27
VSDZ
AC RIPPLE
IOUT
10mA
200mA
10mA
1ms/div
VCCDBST STEP-UP
LOAD TRANSIENT RESPONSE20mA/div
200mV/div
MAX8858 toc28
VCCDBST
AC RIPPLE
IOUT1mA
30mA
1mA
1ms/div
VCCDINV INVERTER
LOAD TRANSIENT RESPONSE100mA/div
200mV/div
MAX8858 toc29
VCCDINV
AC RIPPLE
IOUT10mA
100mA
10mA
1ms/div
VSU STEP-UP LINE
TRANSIENT RESPONSE20mV/div
1V/div
MAX8858 toc30
VSU
AC RIPPLE
VBATT2.7V
3.6V
2.7V
ISU = 500mA
MAX8858
Highly Efficient, All-Internal MOSFET, 6-Channel
PMIC for 2AA Digital Camera Systemsypical Operating Characteristics (continued)(VPVBST= VPVINV= VPVSD= 2.4V, VPVM= 3.3V, VPVSU= VPVZ= 5V, CREF= 0.22µF, TA= +25°C (circuit of Figure 1, unless otherwise
noted.)
1ms/div
VSD STEP-DOWN LINE
TRANSIENT RESPONSE10mV/div
1V/div
MAX8858 toc31
VSD
AC RIPPLE
VBATT2.7V
3.6V
2.7V
ISD = 250mA
1ms/div
CCD LINE
TRANSIENT RESPONSE100mV/div
100mV/div
1V/div
MAX8858 toc32
VCCDINV
AC RIPPLE
VCCDBST
AC RIPPLE
VBATT2.7V
3.6V
2.7V
ICCDBST = ICCDINV = 30mA
4ms/div
POWER-UP SEQUENCE 12V/div
2V/div
2V/div
5V/div
MAX8858 toc33
VSDZ
VSD
VMAIN
VONSD/EN1
VONM/SEQ = VSU = 5V
4ms/div
POWER-UP SEQUENCE 22V/div
2V/div
2V/div
5V/div
MAX8858 toc34
VSDZ
VSD
VMAIN
VONZ/EN2
VONM/SEQ = VSU = 5V
4ms/div
INDEPENDENT POWER-UP SEQUENCE2V/div
2V/div
2V/div
5V/div
MAX8858 toc35
VSDZ
VSD
VMAIN
VONZ/EN2
VSU = 5V
ONM/SEQ = ONSD/EN1 =
ONZ/EN2
2ms/div
OUTINV ACTIVE DISCHARGE20mA/div
2V/div
5V/div
1V/div
MAX8858 toc36
VONSU
VVSU
VINV
ILXINV
ONINV = VSU
ISU = 10mA
IINV = 0mA
MAX8858
Highly Efficient, All-Internal MOSFET, 6-Channel
PMIC for 2AA Digital Camera Systems
Pin Description
PINNAMEFUNCTIONFBMMAIN Step-Up Converter Feedback Input. The feedback threshold is 1.015V. FBM is high impedance
in shutdown.ONSD/EN1
SD Dual-Function Enable Input. When ONM/SEQ = VSU before VVSU reaches regulation, then
ONSD/EN1 selects power-up sequence 1. If ONM/SEQ = GND when VVSU reaches regulation,
ONSD/EN1 turns VSD on and off. See the Power-Up Sequencing and On/Off Control (MAIN, SDZ, SD
Converters) section. ONSD/EN1 has an internal 1MΩ resistor to GND.FBSDSD Step-Down Converter Feedback Input. The feedback threshold is 1.015V. FBSD is high
impedance in shutdown.
4, 20GNDAnalog Ground. Connect GND to EP as close as possible to the IC using a star connection for best
performance.FBZSDZ Step-Down Converter Feedback Input. The feedback threshold is 1.015V. FBZ is high
impedance in shutdown.ONZ/EN2
SDZ Dual-Function Enable Input. When ONM/SEQ = VSU before VVSU reaches regulation, then
ONZ/EN2 selects power-up sequence 2. If ONM/SEQ = GND when VVSU reaches regulation,
ONZ/EN2 turns VSDZ on and off. See the Power-Up Sequencing and On/Off Control (MAIN, SDZ, SD
Converters) section.FBINVCCD Inverting Converter Feedback Input. The feedback threshold is 0V. FBINV is internally pulled to
GND in shutdown.ONINVCCD Inverting Converter On/Off Control Input. Connect ONINV to SU to turn the CCDINV converter
on. CCDINV does not turn on until the SU step-up converter has reached regulation.LXZSDZ Step-Down Converter Switching Node. LXZ is high impedance in shutdown.PVZSDZ Step-Down Converter Power Input. Bypass PVZ to GND with a 1µF ceramic capacitor installed
as close as possible to the IC.LXINVCCD Inverting Converter Switching Node. LXINV is high impedance in shutdown.OUTINV
CCD Inverting Converter Discharge Node. Install a 100Ω resistor between OUTINV and the INV
output capacitor. OUTINV discharges the CCDINV output capacitor for 8ms when ONINV is driven
low. OUTINV is high impedance when ONINV is high and when the IC is in shutdown.PVINVCCD Inverting Converter Power Input. Bypass PVINV to GND with a 1µF ceramic capacitor installed
as close as possible to the IC.PVBSTCCDBST Converter and IC Power Input. Bypass PVBST to GND with a 1µF ceramic capacitor
installed as close as possible to the IC.SWBSTCCDBST True Shutdown Switch Input. Connect the inductor for the CCDBST converter between
LXBST and SWBST. SWBST is high impedance in shutdown.LXBSTCCDBST Open-Drain Switching Node. Connect the inductor for the CCDBST converter between
LXBST and SWBST. LXBST is high impedance in shutdown.ONBST
CCD Boost Converter On/Off Control Input. Connect ONBST to SU to turn on the CCDBST output.
CCDBST does not turn on until the SU step-up converter has reached regulation. ONBST has an
internal 1MΩ pulldown resistor to GND.FBBSTCCDBST Converter Feedback Input. The feedback threshold is 1.02V. FBBST is high impedance in
shutdown.
MAX8858
Highly Efficient, All-Internal MOSFET, 6-Channel
PMIC for 2AA Digital Camera Systems
Pin Description (continued)
PINNAMEFUNCTIONREF1.25V Reference Output. Bypass REF to GND with a 0.22µF ceramic capacitor installed as close as
possible to the IC. REF is internally pulled to GND in shutdown.VSUPower Input Bootstrapped from PVSU. Connect VSU to PVSU through an optional RC filter.ONSU
SU Step-Up Converter On/Off Control Input. Connect ONSU to PVBST to turn on the SU output. No
other outputs turn on until the SU step-up converter has reached regulation. ONSU has an internal
1MΩ pulldown resistor to GND.FBSUSU Step-Up Converter Feedback Input. The feedback threshold is 1.015V. FBSU is high impedance
in shutdown.ONM/SEQ
MAIN/SDZ/SD Dual-Function Enable Input. ONM/SEQ selects either a preset power-up sequence for
the MAIN, SDZ, and SD converters, or allows independent control of the on/off behavior of these
converters. Connect ONM/SEQ to VSU before VVSU has reached regulation to select a preset
power-up sequence. ONSD/EN1 and ONZ/EN2 select the particular power-up sequence.
Alternatively, connect ONM/SEQ to GND before VVSU reaches regulation to select independent
control of the MAIN, SDZ, and SD converters. ONM/SEQ controls the on/off behavior of the VMAIN
converter when independent control is selected. See the Power-Up Sequencing and On/Off Control
(MAIN, SDZ, SD Converters) section.
25, 26LXSUSU Step-Up Converter Switching Node. LXSU is high impedance in shutdown.PVSUSU Step-Up Converter Power Output. Bypass PVSU to GND with 2x 22µF, 6.3V X5R ceramic
capacitors installed as close as possible to the IC.PVSDSD Step-Down Converter Power Input. Bypass PVSD to GND with a 10µF ceramic capacitor installed
as close as possible to the IC.LXSDSD Step-Down Converter Switching Node. LXSD is high impedance in shutdown.PVMStep-Up Converter Power Output. Bypass PVM to GND with 2x 22µF, 6.3V X5R ceramic capacitors
installed as close as possible to the IC.
31, 32LXMMAIN Step-Up Converter Switching Node. LXM is high impedance in shutdown.
—EP
Exposed Pad. EP is internally connected to all converters’ power ground. There are internal bond
wires physically connecting the exposed pad to the internal power grounds (PGs) of all the
converters. Connect EP to the power ground plane and GND as close as possible to the device for
best performance.
