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MAX8791-MAX8791GTA+-MAX8791GTA+T
Single-Phase, Synchronous MOSFET Drivers
MAX8791/MAX8791B
Single-Phase, Synchronous MOSFET Drivers
Ordering Information19-0628; Rev 2; 1/10
General DescriptionThe MAX8791/MAX8791B are single-phase, synchro-
nous, noninverting MOSFET drivers. The MAX8791/
MAX8791B are intended to work with controller ICs like
the MAX8736 or MAX8786, in multiphase notebook
CPU core regulators.
The regulators can either step down directly from the
battery voltage to create the core voltage, or step down
from the main system supply. The single-stage conver-
sion method allows the highest possible efficiency, while
the 2-stage conversion at higher switching frequency
provides the minimum possible physical size.
The low-side drivers are optimized to drive 3nF capaci-
tive loads with 4ns/8ns typical fall/rise times, and the
high-side driver with 8ns/10ns typical fall/rise times.
Adaptive dead-time control prevents shoot-through cur-
rents and maximizes converter efficiency.
The MAX8791/MAX8791B are available in a small, lead-
free, 8-pin, 3mm x 3mm TQFN package.
Features
Applications+Denotes a lead(Pb)-free/RoHS-compliant package.
*EP = Exposed pad.
PARTTEMP RANGEPIN-PACKAGEMAX8791GTA+-40oC to +105oC8 TQFN-EP*
MAX8791BGTA+-40oC to +105oC8 TQFN-EP*
Single-Phase, Synchronous MOSFET Drivers
0.5ΩLow-Side On-Resistance
0.7ΩHigh-Side On-Resistance
8ns Propagation Delay
15ns Minimum Guaranteed Dead Time
Integrated Boost “Diode”
2V to 24V Input Voltage Range
Selectable Pulse-Skipping Mode
Low-Profile TQFN PackageNotebooks/Desktops/Servers
CPU Core Power Supplies
Multiphase Step-Down Converters
SKIP
PWM
BST
GND
TQFN
3mm × 3mmMAX8791
MAX8791B
TOP VIEW
Pin ConfigurationMAX8791
MAX8791B
PWMDH
BST
GND
PAD
PWM
+5V BIAS
SUPPLY
SKIPSKIP
VDD
INPUT (VIN)*
5V TO 24V
VOUT (1.45V
AT 20A)
Typical Operating Circuit
MAX8791/MAX8791B
Single-Phase, Synchronous MOSFET Drivers
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS(Circuit of Figure1, VDD= VSKIP= 5V, TA= -40°C to +105°C, unless otherwise noted. Typical values are at TA= +25°C.) (Note 1)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
VDDto GND...............…………………….………….. -0.3V to +6V
SKIPto GND..................………………………………-0.3V to +6V
PWM to GND................……………………………….-0.3V to +6V
DL to GND..................................................-0.3V to (VDD+ 0.3V)
BST to GND............................................................-0.3V to +36V
DH to LX....................................................-0.3V to (VBST+ 0.3V)
BST to VDD.............................................................-0.3V to +30V
BST to LX................…………………………………...-0.3V to +6V
Continuous Power Dissipation (TA= +70°C)
8-Pin 3mm x 3mm TQFN
(derate 23.8mW/°C above +70°C).............................1904mW
Operating Temperature Range.........................-40°C to +105°C
Junction Temperature......................................................+150°C
Storage Temperature Range.............................-65°C to +150°C
Lead Temperature (soldering, 10s).................................+300°C
Soldering Temperature (reflow).......................................+260°C
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITSInput Voltage RangeVDD4.205.50V
Rising edge, PWM disabled below this level3.7VDD Undervoltage
Lockout ThresholdVUVLO(VDD)Falling edge, PWM disabled below this level3.03.54.0V
PWM = open; after the shutdown hold time has expired0.080.2
SKIP = GND, PWM = GND,
LX = GND (after zero crossing)0.250.5Quiescent Supply
Current (VDD)IDD
SKIP = GND or VDD, PWM = VDD, VBST = 5V0.61.5
DRIVERStON(MIN)Minimum on-time50PWM Pulse WidthtOFF(MIN)Minimum off-time300ns
DL Propagation DelaytPWM-DLPWM high to DL low10ns
DH Propagation DelaytPWM-DHPWM low to DH low14ns
TA = 0°C to +85°C1530DL-to-DH Dead TimetDL-DHDL falling to DH risingTA = -40°C to +105°C15ns
TA = 0°C to +85°C1530DH-to-DL Dead TimetDH-DLDH falling to DL risingTA = -40°C to +105°C15ns
tF_DLFalling, 3.0nF load12DL Transition TimetR_DLRising, 3.0nF load14ns
tF_DHFalling, 3.0nF load8DH Transition TimetR_DHRising, 3.0nF load10ns
DH, high state (pullup)0.92.5DH Driver On-ResistanceRON(DH)BST-LX forced to 5VDH, low state (pulldown)0.72.3Ω
DL, high state (pullup)0.71.8DL Driver On-ResistanceRON(DL)DL, low state (pulldown)0.51.2ΩH D r i ver S our ce C ur r entIDH_SOURCEDH forced to 2.5V, BST - LX forced to 5V2.2A
DH Driver Sink CurrentIDH_SINKDH forced to 2.5V, BST - LX forced to 5V2.7A
DL Driver Source CurrentIDL_SOURCEDL forced to 2.5V2.7A
DL Driver Sink CurrentIDL_SINKDL forced to 2.5V8A
Zero-Crossing ThresholdVZXGND - LX, SKIP = GND3mV
Boost On-ResistanceRON(BST)V D D = 5V , D H = LX = G N D ( p ul l d ow n state) , IBS T = 10m A512Ω
MAX8791/MAX8791B
Single-Phase, Synchronous MOSFET Drivers
ELECTRICAL CHARACTERISTICS (continued)(Circuit of Figure 1, VDD= VSKIP= 5V, TA= -40°C to +105°C, unless otherwise noted. Typical values are at TA= +25°C.) (Note 1)
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITSHigh (DH = high; DL = low)VDD -
MidlevelV D D /2
- 0.4D D /2
+ 0.4
PWM Input Levels
Low (DH = low; DL = high)0.4
Sink; PWM forced to VDD-400-200-80PWM Input CurrentIPWMSource; PWM forced to GND80+200400µA
Midlevel Shutdown Hold
TimetMID120300600ns
Rising edge1.72.4SKIP Input ThresholdFalling edge0.81.5V
SKIP Input CurrentISKIPSink; SKIP forced to 0.8V to VDD, TA = +25°C-4-2-0.5µA
Thermal-Shutdown
ThresholdTSHDNHysteresis = 20°C+160°C
Note 1:Limits are 100% production tested at TA= +25°C. Maximum and minimum limits over temperature are guaranteed through
correlation using statistical-quality-control (SQC) methods.
Typical Operating Characteristics(Circuit of Figure1, VDD= 5V, CDH = 3nF, CDL = 3nF, TA = +25°C, unless otherwise noted.)
PACKAGE-POWER DISSIPATION
vs. PWM FREQUENCYPWM FREQUENCY (kHz)
PD (mW)
MAX8791 toc0120040060080010001200
A: CDH = 3.3nF; CDL = 3.3nF
B: CDH = 1.5nF; CDL = 6.8nF
PACKAGE-POWER DISSIPATION
vs. CAPACITIVE LOAD ON DH AND DLCAPACITANCE (pF)
PD (mW)
MAX8791 toc02
10002500400055007000850010,000
A: 300kHz
B: 600kHz
C: 1MHz
DL RISE AND FALL TIMES
vs. CAPACITIVE LOADCAPACITANCE (pF)
RISE AND FALL TIME (ns)
MAX8791 toc03
10002500400055007000850010,000
RISE TIME
FALL TIME
CDL = CDH
MAX8791/MAX8791B
Single-Phase, Synchronous MOSFET Drivers
Typical Operating Characteristics (continued)(Circuit of Figure1, VDD= 5V, CDH = 3nF, CDL = 3nF, TA = +25°C, unless otherwise noted.)
DH RISE AND FALL TIMES
vs. CAPACITIVE LOADCAPACITANCE (pF)
RISE AND FALL TIME (ns)
MAX8791 toc04
10002500400055007000850010,000
RISE TIME
FALL TIME
CDL = CDH
DH AND DL RISE AND FALL TIMES
vs. TEMPERATURETEMPERATURE (°C)
RISE AND FALL TIME (ns)
MAX8791 toc05
DL RISE
DH RISE
DH FALL
DL FALLDL FALL
DL IS DRIVING 2 SI7336ADP
DH IS DRIVING 1 SI7892ADP
PACKAGE-POWER DISSIPATION
vs. PWM FREQUENCYPWM FREQUENCY (kHz)
IDD
(mW)
MAX8791 toc0620040060080010001200
A: CDH = 3.3nF; CDL = 3.3nF
B: CDH = 1.5nF; CDL = 6.8nF
PROPAGATION DELAY TIME
vs. TEMPERATURETEMPERATURE (°C)
PROPOGATION DELAY TIME (ns)
MAX8791 toc07
PWM FALL TO DH FALL
PWM RISE TO DL FALL
TYPICAL APPLICATION CIRCUIT
SWITCHING WAVEFORMSMAX8791 toc08
VPWM
VDL
10V/div
20V/div
5V/div
5V/div
100ns/div
VLX
VDH
DH FALL AND DL RISE WAVEFORMSMAX8791 toc09
VPWM
VDL
10V/div
10V/div
5V/div
5V/div
20ns/div
VLX
VDH
DH RISE AND DL FALL WAVEFORMSMAX8791 toc10
VPWM
VDL
10V/div
10V/div
5V/div
5V/div
20ns/div
VLX
VDH
MAX8791/MAX8791B
Single-Phase, Synchronous MOSFET Drivers
Pin DescriptionPIN NAME FUNCTION1 BST Boost Flying-Capacitor Connection. Gate-drive power supply for DH high-side gate driver. Connect a 0.1µF or
0.22µF capacitor between BST and LX.2 PWMPWM Input Pin. Noninverting DH control input from the controller IC: Logic high: DH = high (BST), DL = low (PGND).
Midlevel: After the midlevel hold time expires, the controller enters standby mode. DH and DL pulled low.
Logic low: DH = low (LX), DL = high (VDD) when SKIP = high. Internal pullup and pulldown resistors create the midlevel and prevent the controller from triggering an on-time if
this input is left unconnected (not soldered properly) or driven by a high impedance.3 GND Power Ground for the DL Gate Drivers and Analog Ground. Connect exposed pad to GND.4 DL PWM Low-Side Gate-Driver Output. Swings between GND and VDD. DL forced high in shutdown.5 VDD Supply Voltage Input for the DL Gate Drivers. Connect to 4.2V to 5.5V supply and bypass to GND with a 1µF
ceramic capacitor.6 SKIPPulse-Skipping Mode Pin. Enable pulse-skipping mode (zero-crossing comparator enabled) when the driver is
operating in SKIP mode: SKIP = VDD PWM mode
SKIP = GND SKIP mode An internal pulldown current pulls the controller into the low-power pulse-skipping state if this input is left
unconnected (not soldered properly) or driven by a high impedance.7 LX Switching Node and Inductor Connection. Low-power supply for the DH high-side gate driver. LX connects to the skip-mode zero-crossing comparator.8 DH External High-Side nMOSFET Gate-Driver Output. Swings between LX and BST.
Typical Operating Characteristics (continued)(Circuit of Figure1, VDD= 5V, CDH = 3nF, CDL = 3nF, TA = +25°C, unless otherwise noted.)
SWITCHING WAVEFORMS
(PWM = MID TO LOW TO MID)MAX8791 toc11
VPWM
VDL
VDH
VLX
5V/div
5V/div
10V/div
10V/div
SWITCHING WAVEFORMS
(PWM = HIGH TO MID TO HIGH)MAX8791 toc12
VPWM
VDL
VDH
VLX
10V
5V/div
5V/div
10V/div
15V
10V/div
MAX8791/MAX8791B
Single-Phase, Synchronous MOSFET DriversPWM
tPWM-DL
tPWM-DH
tF_DL
tR_DHtR_DHtR_DH
tDL-DHtDH-DL
tMID
tMIDtPWM-DH
tPWM-DL
tF_DLtR_DLtR_DL
tR_DH
MAX8791
MAX8791B
PWMDH
BST
GND
PAD
PWM
+5V BIAS
SUPPLY
SKIPSKIP
VDD
CBST
0.1μF
1.0μF
CDH
3nFCDL
3nF
Figure1. Test Circuit