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MAX870EUK+T ,Switched-Capacitor Voltage InvertersApplicationsMAX871EUK -40°C to +85°C 5 SOT23-5 ABZOLocal -5V Supply from 5V Logic SupplySmall LCD P ..
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MB84VD22181FM-70PBS , 32M (X16) FLASH MEMORY & 4M (X16) STATIC RAM
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MB84VD22183EE-90 ,32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAMFEATURES• Power supply voltage of 2.7 to 3.3 V• High performance90 ns maximum access time (Flash)85 ..
MB84VD22184FM-70 , 32M (X16) FLASH MEMORY & 4M (X16) STATIC RAM
MAX8702ETP+T
Dual-Phase MOSFET Drivers with Temperature Sensor
General DescriptionThe MAX8702/MAX8703 dual-phase noninverting
MOSFET drivers are designed to work with PWM con-
troller ICs, such as the MAX8705/MAX8707, in note-
book CPU core and other multiphase regulators.
Applications can either step down directly from the bat-
tery voltage to create the core voltage, or step down
from a low-voltage system supply. The single-stage con-
version method allows the highest possible efficiency,
while the 2-stage conversion at higher switching frequen-
cy provides the minimum possible physical size.
Each MOSFET driver is capable of driving 3nF capaci-
tive loads with only 19ns propagation delay and 8ns
typical rise and fall times. Larger capacitive loads are
allowable but result in longer propagation and transition
times. Adaptive dead-time control helps prevent shoot-
through currents and maximizes converter efficiency.
The MAX8702/MAX8703 feature zero-crossing com-
parators on each channel. When enabled, these com-
parators permit the drivers to be used in pulse-skipping
operation, thereby saving power at light loads. A sepa-
rate shutdown control is also included that disables all
functions, drops quiescent current to 2µA, and sets DH
low and DL high.
The MAX8702 integrates a resistor-programmable tem-
perature sensor. An open-drain output (DRHOT) signals
to the system when the local die temperature exceeds
the set temperature. The MAX8702/MAX8703 are avail-
able in a thermally-enhanced 20-pin thin QFN package.
ApplicationsMultiphase High-Current Power Supplies
2- to 4-Cell Li+ Battery to CPU Core Supplies
Notebook and Desktop Computers
Servers and Workstations
FeaturesDual-Phase MOSFET Driver0.35Ω(typ) On-Resistance and 5A (typ)
Drive CurrentDrives Large Synchronous-Rectifier MOSFETsIntegrated Temperature Sensor (MAX8702 Only)
Resistor Programmable
Open-Drain Driver Hot Indicator (DRHOT)Adaptive Dead Time Prevents Shoot-ThroughSelectable Pulse-Skipping Mode4.5V to 28V Input Voltage RangeThermally Enhanced Low-Profile Thin QFN Package
MAX8702/MAX8703
Dual-Phase MOSFET Drivers
with Temperature SensorMAX8702
+5V
TSET
AGND
VOUT
VIN
4.5V TO 28VBST1
DH1
LX1
DL1
PGND1
VCC
DRHOT
VDD
SHDN
+5V
VOUT
VIN4.5V TO 28V
+5V
BST2
DH2
LX2
DL2
PGND2
SKIP
PWM1
PWM2
Minimal Operating Circuit
Ordering Information19-3357; Rev 0; 8/04
PARTTEMP RANGEPIN-
PACKAGED ESC R IPT IO N
MAX8702ETP-40°C to +100°C20 Thi n Q FN
4m m x 4m m
Dual-Phase
Driver with
Temp. Sensor
MAX8703ETP-40°C to +100°C20 Thi n Q FN
4m m x 4m m
Dual-Phase
Driver without
Temp. Sensor
Pin Configuration appears at end of data sheet.
MAX8702/MAX8703
Dual-Phase MOSFET Drivers
with Temperature Sensor
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS(Circuit of Figure2. VCC= VDD= VSHDN= VSKIP= 5V, TA
= 0°C to +85°C. Typical values are at TA= +25°C, unless otherwise noted.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
VCCto AGND............................................................-0.3V to +6V
VDDto AGND............................................................-0.3V to +6V
PGND_ to AGND...................................................-0.3V to +0.3V
SKIP, SHDN, DRHOT, TSET to AGND......................-0.3V to +6V
PWM_ to AGND........................................................-0.3V to +6V
DL_ to PGND_............................................-0.3V to (VDD + 0.3V)
LX_ to AGND.............................................................-2V to +30V
DH_ to LX_...............................................-0.3V to (VBST_ + 0.3V)
BST_ to LX_..............................................................-0.3V to +6V
Continuous Power Dissipation (TA= +70°C)
20-Pin 4mm x 4mm Thin QFN
(derate 16.9mW/°C above +70°C).............................1349mW
Operating Temperature Range.........................-40°C to +100°C
Junction Temperature......................................................+150°C
Storage Temperature Range.............................-65°C to +150°C
Lead Temperature (soldering, 10s).................................+300°C
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITSInput Voltage RangeVCC4.55.5V
VCC rising3.43.854.1VCC Undervoltage-Lockout
ThresholdVUVLO85mV typical
hysteresisVCC falling3.33.754.0V
SKIP = AGND, PWM_ = AGND200400µAVCC Quiescent Current
(Note 1)ICCSKIP = AGND, PWM_ = VCC23mA
VDD Quiescent CurrentIDDSKIP = AGND, PWM_ = AGND15µA
VCC Shutdown CurrentSHDN = SKIP = AGND25µA
VDD Shutdown CurrentSHDN = SKIP = AGND15µA
GATE DRIVERS AND DEAD-TIME CONTROL (Figure 1)tPWM-DL PWM_ high to DL_ low 19 DL_ Propagation Delay tDH-DL DH_ low to DL_ high 36 nstDL-DH DL_ low to DH_ high 25 DH_ Propagation Delay tPWM-DH PWM_ low to DH_ low 23 ns
tF_DLDL_ falling, 3nF load 11DL_ Transition TimetR_DLDL_ rising, 3nF load 8ns
tF_DHDH_ falling, 3nF load 14DH_ Transition TimetR_DHDH_ rising, 3nF load 16ns
DH_ On-Resistance (Note 2)RDHVBST_ - VLX_ = 5V1.04.5Ω
RDL_HIGHHigh state (pullup)1.04.5DL_ On-Resistance (Note 2)RDL_LOWLow state (pulldown)0.352.0Ω
DH_ Source/Sink CurrentIDHVDH_ = 2.5V, VBST_ - VLX_ = 5V1.5A
DL_ Source CurrentIDL_SOURCEVDL_ = 2.5V1.5A
DL_ Sink CurrentIDL_SINKVDL_ = 5V5A
Zero-Crossing ThresholdVPGND_ - VLX_, SKIP = AGND2.5mV
TEMPERATURE SENSORTemperature Threshold
Accuracy TA = +85°C to +125°C, 10°C falling hysteresis -5 +5 °CDRHOT Output Low Voltage ISINK = 3mA 0.4 VDRHOT Leakage Current High state, VDRHOT = 5.5V 1 µA
MAX8702/MAX8703
Dual-Phase MOSFET Drivers
with Temperature Sensor
Note 1:Static drivers instead of pulsed-level translators.
Note 2:Production testing limitations due to package handling require relaxed maximum on-resistance specifications for the
thin QFN package.
Note 3:Specifications from -40°C to +100°C are guaranteed by design, not production tested.
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITSThermal-Shutdown Threshold 10°C hysteresis +160 °C
LOGIC CONTROL SIGNALSLogic Input High Voltage SHDN, SKIP, PWM1, PWM2 2.4 VLogic Input Low Voltage SHDN, SKIP, PWM1, PWM2 0.8 VLogic Input Current SHDN, SKIP, PWM1, PWM2 -1 +1 µA
ELECTRICAL CHARACTERISTICS (continued)(Circuit of Figure2. VCC= VDD= VSHDN= VSKIP= 5V, TA
= 0°C to +85°C. Typical values are at TA= +25°C, unless otherwise noted.)
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITSInput Voltage RangeVCC4.55.5V
VCC rising3.44.1VCC Undervoltage-Lockout
ThresholdVUVLO85mV typical
hysteresisVCC falling3.34.0V
SKIP = AGND, PWM_ = PGND_450µAVCC Quiescent CurrentICCSKIP = AGND, PWM_ = VCC3mA
VDD Quiescent CurrentIDDSKIP = AGND, PWM_ = PGND_,
TA = -40°C to +85°C5µA
VCC Shutdown CurrentSHDN = SKIP = AGND, TA = -40°C to +85°C5µA
VDD Shutdown CurrentSHDN = SKIP = AGND, TA = -40°C to +85°C5µA
GATE DRIVERS AND DEAD-TIME CONTROLDH_ On-Resistance (Note 2)RDHVBST_ - VLX_ = 5V1.04.5Ω
RDL _HIGHHigh state (pullup)1.04.5DL_ On-Resistance (Note 2)RDL _LOWLow state (pulldown)0.352.0Ω
TEMPERATURE SENSORDRHOT Output Low Voltage ISINK = 3mA 0.4 V
LOGIC CONTROL SIGNALSLogic Input High Voltage SHDN, SKIP, PWM1, PWM2 2.4 VLogic Input Low Voltage SHDN, SKIP, PWM1, PWM2 0.8 V
ELECTRICAL CHARACTERISTICS(Circuit of Figure2. VCC= VDD= VSHDN= VSKIP= 5V, TA
= -40°C to +100°C, unless otherwise noted.) (Note 3)
POWER DISSIPATION vs. FREQUENCY
(SINGLE PHASE, BOTH DRIVERS SWITCHING)MAX8702/03 toc01
FREQUENCY (MHz)
POWER DISSIPATION (mW)
CDL = 6nF, CDH = 3nF
CDL = 3nF, CDH = 3nF
CDL = 3nF,
CDH = 1.5nF
VCC = 5.5V
POWER DISSIPATION vs. CAPACITIVE LOAD
(SINGLE PHASE, BOTH DRIVERS SWITCHING)
MAX8702/03 toc02
CAPACITANCE (nF)
POWER DISSIPATION (mW)
FREQ = 1.2MHz
FREQ = 0.6MHz
FREQ = 0.3MHz
VCC = 5.5V,
CDH = CDL2456
DL RISE/FALL TIME vs. CAPACITIVE LOADMAX8702/03 toc03
CAPACITANCE (nF)
RISE/FALL TIME (ns)
DL RISE
DL FALL2456
DH RISE/FALL TIME vs. CAPACITIVE LOADMAX8702/03 toc04
CAPACITANCE (nF)
RISE/FALL TIME (ns)
DH RISE
DH FALL
MAX8702/MAX8703
Dual-Phase MOSFET Drivers
with Temperature SensorPWM_
DL_
DH_10%
tR_DH
90%
10%
90%
tF_DLtPWM-DL
10%
90%
tF_DH
10%
tR_DL
90%
tDL-DHtDH-DLtPWM-DH
Figure 1. Timing Definitions Used in the Electrical Characteristics
Typical Operating Characteristics(Circuit of Figure2. VIN= 12V, VDD= VCC= VSHDN= VSKIP= 5V, TA= +25°C unless otherwise noted.)
MAX8702/MAX8703
Dual-Phase MOSFET Drivers
with Temperature Sensor
DH/DL RISE/FALL TIMES
vs. TEMPERATUREMAX8702 toc05
TEMPERATURE (°C)
RISE/FALL TIME (ns)
DH RISEDH FALL
DL RISE
DL FALL
CDH = CDL = 3nF
PROPAGATION DELAY vs. TEMPERATUREMAX8702 toc06
TEMPERATURE (°C)
PROPAGATION DELAY (ns)
DL FALL TO DH RISE
PWM FALL TO DH FALL
PWM RISE TO DL FALL
CDH = CDL = 3nF
RTSET vs. TEMPERATUREMAX8702 toc07
TEMPERATURE (°C)
TSET
(k
TYPICAL SWITCHING WAVEFORMS
MAX8702 toc08
125ns/div
10V
A. PWM, 5V/div
B. DL, 5V/div
C. DH, 10V/div
D. LX, 10V/div
DH RISE AND DL FALL WAVEFORMSMAX8702 toc09
20ns/div
10V
A. PWM, 5V/div
B. DL, 5V/div
C. DH, 10V/div
D. LX, 10V/div
DH FALL AND DL RISE WAVEFORMSMAX8702 toc10
20ns/div
10V
A. PWM, 5V/div
B. DL, 5V/div
C. DH, 10V/div
D. LX, 10V/div
Typical Operating Characteristics (continued)(Circuit of Figure2. VIN= 12V, VDD= VCC= VSHDN= VSKIP= 5V, TA= +25°C unless otherwise noted.)
MAX8702/MAX8703
Dual-Phase MOSFET Drivers
with Temperature Sensor
Pin DescriptionPINMAX8702 MAX8703 NAME FUNCTION1 1 PWM1 Phase 1 PWM Logic Input. DH1 is high when PWM1 is high; DL1 is high when PWM1 is low.2 2 PWM2 Phase 2 PWM Logic Input. DH2 is high when PWM2 is high; DL2 is high when PWM2 is low.3 3 AGND Analog Ground. The AGND and PGND_ pins must be connected externally at one point close to
the IC. Connect the device’s exposed backside pad to AGND.4 — TSETTemperature-Set Input. Connect an external 1% resistor from TSET to AGND to set the trip point.
RTSET = 85,210 / T - 745,200 / T2 - 195, where RTSET is the temperature-setting resistor in kΩ
and T is the trip temperature in Kelvin.5 — DRHOT Driver-Hot-Indicator Output. DRHOT is an open-drain output. Pull up with an external resistor.
When the device’s temperature exceeds the programmed set point, DRHOT is pulled low.6 — I.C. Internally Connected. Connect to AGND.7 7 VCCInternal Control Circuitry Supply Input. The input voltage range is from 4.5V to 5.5V. Bypass VCC
to AGND with a 1µF ceramic capacitor. The maximum resistance between VCC and VDD should
be 10Ω.8 8 BST2 Phase 2 Bootstrap Flying-Capacitor Connection. An optional resistor in series with BST2 allows
the DH2 pullup current to be adjusted.9 9 DH2 Phase 2 High-Side Gate-Driver Output. DH2 swings between LX2 and BST2.10 10 LX2 Phase 2 Inductor Switching Node Connection. LX2 is the internal lower supply rail for the DH2
high-side gate driver. LX2 is also the input to the skip-mode zero-crossing comparator.11 11 PGND2 Phase 2 Power Ground. PGND2 is the internal lower supply rail for the DL2 low-side gate driver.12 12 DL2 Phase 2 Low-Side Gate-Driver Output. DL2 swings between PGND2 and VDD. DL2 is high in
shutdown.13 13 VDD DL_ Gate-Driver Supply Input. The input voltage range is from 4.5V to 5.5V. Bypass VDD to the
power ground with a 2.2µF ceramic capacitor.14 14 DL1 Phase 1 Low-Side Gate-Driver Output. DL1 swings between PGND1 and VDD. DL1 is high in
shutdown.15 15 PGND1 Phase 1 Power Ground. PGND1 is the internal lower supply rail for the DL1 low-side gate driver.16 16 LX1 Phase 1 Inductor Switching Node Connection. LX1 is the internal lower supply rail for the DH1
high-side gate driver. LX1 is also the input to the skip-mode zero-crossing comparator.17 17 DH1 Phase 1 High-Side Gate-Driver Output. DH1 swings between LX1 and BST1.18 18 BST1 Phase 1 Bootstrap Flying-Capacitor Connection. An optional resistor in series with BST1 allows
the DH1 pullup current to be adjusted.19 19 SKIPPulse-Skipping-Mode Control Input. The pulse-skipping mode is enabled when SKIP is low.
When SKIP is high, both drivers operate in PWM mode (i.e., except during dead times, DL_ is the
complement of DH_).20 20 SHDN S hutd ow n C ontr ol Inp ut. W hen S HD N and S KIP ar e l ow , D H _ i s for ced l ow , D L_ for ced hi g h, and
the d evi ce enter s i nto a l ow - p ow er shutd ow n state. Tem p er atur e sensi ng i s d i sab l ed i n shutd ow n.— 4, 5, 6 N. C. No Connection. Not internally connected.
MAX8702/MAX8703
Dual-Phase MOSFET Drivers
with Temperature Sensorypical Operating CircuitThe typical operating circuit of the MAX8702 (Figure2)
shows the power-stage and gate-driver circuitry of a dual-
phase CPU core supply operating at 300kHz, with each
phase capable of supplying 20A of load current. Table1
lists recommended component options, and Table2 lists
the component suppliers’ contact information.
Detailed DescriptionThe MAX8702/MAX8703 dual-phase noninverting
MOSFETdrivers are intended to work with PWM con-
troller ICs in CPU core and other multiphase switching
regulators. Each MOSFET driver is capable of driving
3nF capacitive loads with only 19ns propagation delay
and 8ns typical rise and fall times. Larger capacitive
loads are allowable but result in longer propagation
and transition times. Adaptive dead-time control pre-
vents shoot-through currents and maximizes converter
NH1
MAX8702
NL1
2.2μF
0.22μF
0.22μF
1μF
10Ω
+5V
RTSET
DBST1
TSET
AGND
VOUT
VOUT
VIN
7V TO 20V
VIN
7V TO 20V
BST1
DH1
LX1
DL1
PGND1
VCC
DRHOT
COUT1
CIN1
VDD
NH2SHDN
+5V
NL2D2
BST2
DH2
LX2FROM
CONTROLLERDL2
PGND2
COUT2
CIN2
DBST2
100kΩ
+5V
DRSKPSKIP
PWM1PWM1
PWM2PWM2
Figure 2. MAX8702 Typical Operating Circuit
DESIGNATIONDESCRIPTIONTotal Input
Capacitance (CIN)
(4) 10µF, 25V
Taiyo Yuden TMK432BJ106KM or
TDK C4532X5R1E106M
Total Output
Capacitance (COUT)
(4) 330µF, 2.5V, 9mΩ low-ESR polymer
capacitor (D case)
Sanyo 2R5TPE330M9
Schottky Diode
(per phase)
3A Schottky diode
Central Semiconductor
CMSH3-40
Inductor (per phase)
0.6µH
Panasonic ETQP1H0R6BFA or
Sumida CDEP134H-0R6
High-Side MOSFET
(NH, per phase)
Siliconix (1) Si7892DP or
International Rectifier (2) IRF6604
Low-Side MOSFET
(NL, per phase)
Siliconix (2) Si7442DP or
International Rectifier (2) IRF6603
Table1. Component List
SUPPLIERWEBSITECentral Semiconductorwww.centralsemi.com
Fairchild Semiconductorwww.fairchildsemi.com
International Rectifierwww.irf.com
Panasonicwww.panasonic.com
Sanyowww.secc.co.jp
Siliconix (Vishay)www.vishay.com
Sumidawww.sumida.com
Taiyo Yudenwww.t-yuden.com
TDKwww.component.tdk.com
Table2. Component SuppliersDH_
BST_
LX_
DL_
VDD
PGND_
VCC
TSET*
DRHOT*
PWM_
SKIP
AGND
SHDN
CONTROL
AND ADAPTIVE
DEAD-TIME
CIRCUIT
TEMP
SENSOR +
TSDN
LX_
PGND_
PWM BLOCK (x2)
*MAX8702 ONLY
MAX8702
MAX8703
UVLO
Figure 3. MAX8702 Functional Diagram
