MAX8552ETB+T ,High-Speed, Wide-Input, Single-Phase MOSFET DriverELECTRICAL CHARACTERISTICS(V = V = V = V = 5V, V = V = V = 0V; T = -40°C to +85°C, unless otherwise ..
MAX8552EUB ,High-Speed, Wide-Input, Single-Phase MOSFET DriverELECTRICAL CHARACTERISTICS(V = V = V = V = 5V, V = V = V = 0V; T = -40°C to +85°C, unless otherwise ..
MAX8552EUB+ ,High-Speed, Wide-Input, Single-Phase MOSFET DriverFeaturesThe MAX8552 highly integrated monolithic MOSFET dri-♦ Single-Phase Synchronous Driversver i ..
MAX8552EUB+T ,High-Speed, Wide-Input, Single-Phase MOSFET DriverApplications10 TDFNMAX8552ETB -40°C to +85°CMultiphase Buck Converters3mm x 3mmVoltage Regulator Mo ..
MAX8553EEE+ ,4.5V to 28V Input, Synchronous PWM Buck Controllers for DDR Termination and Point-of-Load ApplicationsELECTRICAL CHARACTERISTICS(V = V = +12V, V = V = +2.5V, V = +5V, C = 4.7µF, C = 1µF, C = 0.22µF, V ..
MAX8554EEE ,4.5V to 28V Input / Synchronous PWM Buck Controllers for DDR Termination and Point-of-Load ApplicationsELECTRICAL CHARACTERISTICS(V = V = +12V, V = V = +2.5V, V = +5V, C = 4.7µF, C = 1µF, C = 0.22µF, V ..
MB8264A-10 , MOS 65536-BIT DYNAMIC RANDOM ACCESS MEMORY
MB8264A-10 , MOS 65536-BIT DYNAMIC RANDOM ACCESS MEMORY
MB8264A-10 , MOS 65536-BIT DYNAMIC RANDOM ACCESS MEMORY
MB82D01171A-80LLPBN , 16 Mbit (1 M word x 16 bit) Mobile Phone Application Specific Memory
MB82D01171A-80LLPBN , 16 Mbit (1 M word x 16 bit) Mobile Phone Application Specific Memory
MB82D01171A-90LLPBT , 16 Mbit (1 M word x 16 bit) Mobile Phone Application Specific Memory
MAX8552ETB+T-MAX8552EUB+-MAX8552EUB+T
High-Speed, Wide-Input, Single-Phase MOSFET Driver
General DescriptionThe MAX8552 highly integrated monolithic MOSFET dri-
ver is capable of driving a pair of power MOSFETs in
single or multiphase synchronous buck-converter appli-
cations that provide up to 30A output current per
phase. The MAX8552 simplifies PC board layout in mul-
tiphase systems, particularly three phases and higher.
High input voltages up to 24V allow the MAX8552 to be
used in desktop, notebook, and server applications.
Each MOSFET driver is capable of driving 3000pF
capacitive loads with only 12ns propagation delay and
11ns (typ) rise and fall times, making the MAX8552
ideal for high-frequency applications.
User-programmable break-before-make circuitry pre-
vents shoot-through currents, maximizing converter effi-
ciency. An enable input allows total driver shutdown
(<1µA typ) for power-sensitive portable applications.
The PWM control input is compatible with TTL and
CMOS logic levels. The MAX8552, along with the
MAX8524 or the MAX8525 multiphase controllers, pro-
vides flexible 2-, 3-, 4-, 6-, or 8-phase CPU core-voltage
supplies.
The MAX8552 is available in space-saving 10-pin TDFN
and µMAX packages and is specified for -40°C to
+85°C operation.
ApplicationsMultiphase Buck Converters
Voltage Regulator Modules (VRMs)
Processor-Core Voltage Regulators
Desktops, Notebooks, and Servers
Switching Power Supplies
FeaturesSingle-Phase Synchronous DriversUp to 24V (max) Input Voltage0.1µA (typ) Quiescent Current in Shutdown Over
Temperature0.5Ω/1.0Ω/0.7Ω/1.3ΩROUTDrivers12ns (typ) Propagation Delay11ns (typ) Rise/Fall Times with 3000pF LoadAdaptive Dead Time and User-Programmable
Delay ModeUp to 2MHz Operation with TDFN PackageUp to 1.2MHz Operation with µMAX PackageEnable FunctionTTL- and CMOS-Compatible Logic InputsAvailable in a Space-Saving Thin DFN Package
MAX8552
High-Speed, Wide-Input,
Single-Phase MOSFET Driver
Ordering InformationVCC
GND
OFF
DLY
PWM
BST
PGND
MAX8552EN
VIN
6V TO 24V
VOUT
1.45V AT 20A
VCC
4.5V TO 6.5V
PWM CONTROL
SIGNAL
Typical Operating Circuit19-2997; Rev 0; 10/03
PARTTEMP RANGEPIN-PACKAGEMAX8552EUB-40°C to +85°C10 µMAX
MAX8552ETB-40°C to +85°C10 TDFN
3mm x 3mm
Pin Configurations appear at end of data sheet..0mmx3.0-PINTDF
MAX8552
High-Speed, Wide-Input,
Single-Phase MOSFET Driver
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS(VCC= VBST= VDLY= VEN= 5V, VGND= VPGND= VLX= 0V; TA= -40°C to +85°C, unless otherwise noted. Typical values are at TA=
+25°C.) (Note 1)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
VCCto GND..............................................................-0.3V to +7V
PWM, EN, DL, DLY to GND........................-0.3V to (VCC+ 0.3V)
BST to PGND..........................................................-0.3V to +35V
LX to PGND...............................................................-1V to +28V
DH to PGND..............................................-0.3V to (VBST+ 0.3V)
DH, BST to LX...........................................................-0.3V to +7V
DH and DL Continuous Current......................................±200mA
Continuous Power Dissipation (TA= +70°C)
10-Pin µMAX (derate 5.6mW/°C above +70°C)........444.4mW
10-Pin TDFN (derate 24.4mW/°C above +70°C).......1951mW
Operating Temperature Range...........................-40°C to +85°C
Junction Temperature......................................................+150°C
Storage Temperature Range.............................-65°C to +150°C
Lead Temperature (soldering, 10s).................................+300°C
PARAMETERCONDITIONSMINTYPMAXUNITS
UNDERVOLTAGE PROTECTIONVCC Supply Voltage Range4.56.5V
VCC rising3.253.80Undervoltage Lockout (UVLO)0.25V hysteresisVCC falling3.03.5V
PWM = GND or VCC,
TA= +25°C0.041
Shutdown Supply CurrentVEN = 0V, VCC = 6.5V
PWM = GND or VCC,
TA = +85°C0.1
Idle Supply Current (ICC)No switchingVCC = 6.5V, PWM = GND,
RDLY = 47kΩ330500µA
PWM = GND2550µANo switchingPWM = VCC23mAControl Supply Current (IGND)
SwitchingfPWM = 250kHz,
50% duty cycle1.83mA
PWM = GND0.110µANo switching, ICCPWM = VCC1.22mA
PWM = GND0.110µANo switching, IBSTPWM = VCC1.22
Driver Supply Current (IPGND)
Switching, IBST + ICC250kHz24mA
DRIVER SPECIFICATIONS (See the Timing Diagram)VBST = 4.5V1.32.4PWM = GND,
sourcing currentVBST = 5V1.2
VBST = 4.5V0.71.1DH Driver Resistance
PWM = VCC,
sinking currentVBST = 5V0.6
MAX8552
High-Speed, Wide-Input,
Single-Phase MOSFET Driver
ELECTRICAL CHARACTERISTICS (continued)(VCC= VBST= VDLY= VEN= 5V, VGND= VPGND= VLX= 0V; TA= -40°C to +85°C, unless otherwise noted. Typical values are at TA=
+25°C.) (Note 1)
PARAMETERCONDITIONSMINTYPMAXUNITSVCC = 4.5V1.01.6PWM = GND,
sourcing currentVCC = 5V0.9
VCC = 4.5V0.50.8DL Driver Resistance
PWM = VCC,
sinking currentVCC = 5V0.45
DH Rise Time (trDH)PWM = VCCVBST = 5V, 3000pF load14ns
DH Fall Time (tfDH)PWM = GNDVBST = 5V, 3000pF load9ns
DL Rise Time (trDL)PWM = VCCVCC= 5V, 3000pF load11ns
DL Fall Time (tfDL)PWM = GNDVCC= 5V, 3000pF load8ns
PWM falling (tpDHf)VBST = 5V12
DH Propagation DelayPWM = VCC,
DL falling (tpDHr)VBST = 5V14ns
PWM rising (tpDLf)9
DL Propagation DelayPWM = GND,
LX falling (tpDLr)VBST - VLX = 5V16ns
VPWM = 0V or 6.5V, VEN = 0V or 6.5V,
VCC = 6.5V, TA = +25°C0.011
Leakage Current
VPWM = 0V or 6.5V, VEN = 0V or 6.5V,
VCC = 6.5V, TA = +85°C0.1
Input-Voltage High ThresholdVCC = 6.5V2.5V
Input-Voltage Low ThresholdVCC = 4.5V0.8V
PWMVPWM = 0V or 6.5V, VEN = 0V or 6.5V,
VCC = 6.5V, TA = +25°C0.011
Leakage Current
VPWM = 0V or 6.5V, VEN = 0V or 6.5V,
VCC = 6.5V, TA = +85°C0.1
Input-Voltage High ThresholdVCC = 6.5V3.5V
Input-Voltage Low ThresholdVCC = 4.5V1.2V
Input Threshold Hysteresis0.5V
DLYDelay Program AccuracyRDLY = 47kΩ, DL fall to DH rise67.590.0112.5ns
Delay Disable-Detection
Threshold4.04.7V
Note 1:Specifications are production tested at TA= +25°C. Maximum and minimum limits are guaranteed by design and characterization.
MAX8552
High-Speed, Wide-Input,
Single-Phase MOSFET Driver
Typical Operating Characteristics(VCC= VDLY= 5V, CHS_LOAD= CLS_LOAD= 3000pF, 50% duty ratio.)
PACKAGE-POWER DISSIPATION
vs. PWM FREQUENCY
MAX8552 toc01
PWM FREQUENCY (kHz)
(mW)
A: CHS = 3300pF; CLS = 3300pF
B: CHS = 3300pF; CLS = 5600pF
C: CHS = 1500pF; CLS = 3300pF
VCC = 6.5V
PACKAGE-POWER DISSIPATION
vs. CAPACITIVE LOAD ON DH AND DL
MAX8552 toc02
CAPACITANCE (pF)
(mW)
A: fS = 300kHz
B: fS = 600kHz
C: fS = 1MHz
CDH = CDL
VCC = 6.5V
DL RISE AND FALL TIMES
vs. CAPACITIVE LOAD
MAX8552 toc03
CAPACITANCE (pF)
RISE AND FALL TIME (ns)
RISE TIME
FALL TIME
DH RISE AND FALL TIMES
vs. CAPACITIVE LOAD
MAX8552 toc04
CAPACITANCE (pF)
RISE AND FALL TIME (ns)
RISE TIME
FALL TIME
DH AND DL RISE AND FALL TIMES
vs. TEMPERATURE
MAX8552 toc05
TEMPERATURE (°C)
RISE AND FALL TIME (ns)
DH RISE
DL RISE
DH FALL
DL FALL
CONTROL-CIRCUITRY CURRENT
vs. PWM FREQUENCY
MAX8552 toc06
PWM FREQUENCY (kHz)
IGND
(mA)
VCC = 6.5V
VCC = 5V
VEN = 0V
PROPAGATION DELAY
vs. TEMPERATURE
MAX8552 toc07
TEMPERATURE (°C)
PROPAGATION DELAY (ns)
DL FALL TO DH RISE
PWM RISE TO DL FALL
PWM FALL TO DH FALL
PROGRAMMABLE DELAY (tDLY)
vs. RDLY
MAX8552 toc08
RDLY (kΩ)
PROGRAMMABLE DELAY (ns)
TYPICAL APPLICATION CIRCUIT
SWITCHING WAVEFORMSMAX8552 toc09VPWM
VDH
VDL
VLX
5V/div
10V/div
5V/div
20V/div
100ns/div
MAX8552
High-Speed, Wide-Input,
Single-Phase MOSFET Driver
Pin Description
PINNAMEFUNCTION1VCCInput Supply Voltage. Connect to a supply voltage in the 4.5V to 6.5V range. Bypass to PGND with a
2.2µF or larger capacitor, and bypass to GND with a 0.47µF or larger capacitor.
2DL
External Synchronous-Rectifier N-MOSFET Gate-Driver Output. Swings between VCC and PGND.
Anticrowbar feature prevents DL from turning on until DH is off and (LX - PGND) < 2V. DL is pulled to
GND in shutdown.PGNDPower GroundGNDAnalog GroundDLY
Dead-Time Delay Programming Input. Connect a resistor from DLY to GND to set the dead-time delay
between when DL falls and when DH rises. Connect DLY to VCC to disable the delay function. See the
Typical Operating Characteristics for RDLY selection.PWMPWM Input. DH is high when PWM is high; DL is high when PWM is low. Input frequency can be as
high as 1.2MHz for the 10-pin µMAX package and as high as 2MHz for the 10-pin TDFN package.
7ENEnable Input. Drive high to enable output drivers. Drive low to disable output drivers and place the IC
in low-power shutdown mode.
8LX
Switching Node and Inductor Connection. Low power supply for the DH high-side gate driver.
Connect to the source of the high-side N-MOSFET and the drain of the low-side N-MOSFET, as well
as the switched side of the inductor.
9DH
External High-Side N-MOSFET Gate-Driver Output. Swings between LX and BST. Anticrowbar feature
delays DH from turning on until DL is off. An additional user-programmable delay can be added. DH
is pulled to LX in shutdown.BSTBoost Flying-Capacitor Connection. Gate-drive power supply for DH high-side gate driver. Connect a
0.47µF or larger capacitor between BST and LX.Exposed
Paddle*Exposed Paddle. Connect to GND.
*10-pin TDFN only.
MAX8552
High-Speed, Wide-Input,
Single-Phase MOSFET DriverPWM
tpDLftpDHf
tfDLtpDHrtpDLrtrDL
trDHtfDH
*WHEN RDLY IS USED, tpDHr BECOMES THE LONGER OF THE USER-PROGRAMMABLE TIME DELAY, tDLY,
OR THE ADAPTIVE DEAD TIME, tpDHr. DRAWING IS NOT TO SCALE.
(tDLY)*
MAX8552DHON
DHOFF
DLON
DLOFF
DRIVE LOGICVCC
DELAY LOGIC
PWM
UVLO
DELAY
PROGRAM
VCC
DLY
BST
PGND
LXLOWDETECT
Timing Diagram
Functional Diagram
