MAX8213ACSE ,Five Universal Voltage MonitorsApplications
Microprocessor Voltage Monitoring
Precision Battery Monitoring
Over/Under/Window ..
MAX8213ACSE ,Five Universal Voltage MonitorsGeneral Description
The MAX8213 and MAX8214 contain four precision voIt-
age comparators capabl ..
MAX8213ACSE ,Five Universal Voltage MonitorsGeneral Description
The MAX8213 and MAX8214 contain four precision voIt-
age comparators capabl ..
MAX8213ACSE ,Five Universal Voltage MonitorsFeatures
. i1% Guaranteed Trip-Level Accuracy over
Commercial Temp. Range
. 4 Precision Comp ..
MAX8213ACSE+ ,Five Universal Voltage Monitors, Complete µP Voltage MonitoringFeatures
. i1% Guaranteed Trip-Level Accuracy over
Commercial Temp. Range
. 4 Precision Comp ..
MAX8213ACSE+T ,Five Universal Voltage Monitors, Complete µP Voltage MonitoringGeneral Description
The MAX8213 and MAX8214 contain four precision voIt-
age comparators capabl ..
MB81464- ,MOS 262144 Bit DRAMfeatures page mode which allows high speed
random access of up to 256 bits within the same tow.
..
MB81C81A-35 ,CMOS 256K-BIT HIGH-SPEED SRAMMay 1990 00
Edition1.0 FUJITSU
M38 1 C8 1A-25/-35
CMOS 256K-BI T HIGH-SPEED SRAM
256K Words ..
MB81F643242C-10FN ,4 x 512K x 32 bit synchronous dynamic RAMFUJITSU SEMICONDUCTORADVANCED INFO. AE0.1EDATA SHEETMEMORYCMOS4 · 512 K · 32 BITSYNCHRONOUS DYNAMIC ..
MB81F643242C-10FN ,4 x 512K x 32 bit synchronous dynamic RAMfeatures a fully synchronous operation referenced to a positive edge clock whereby all operations a ..
MB81N643289-60FN ,8 x 256K x 32 bit double data rate FCRAMapplications where large memory density and high effective bandwidth arerequired and where a simple ..
MB8264A-10 , MOS 65536-BIT DYNAMIC RANDOM ACCESS MEMORY
MAX8213ACPE-MAX8213ACSE-MAX8213AESE-MAX8213BCPE-MAX8213BCSE-MAX8213BESE-MAX8214ACPE-MAX8214ACSE-MAX8214AESE-MAX8214BCPE-MAX8214BCSE-MAX8214BESE
Five Universal Voltage Monitors
19-0106:Rev l; 7/93
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Five Universal Voltage Monitors -
Complete Microprocessor Voltage Monitoring
General Description
The MAX8213 and MAX8214 contain four precision volt-
age comparators capable of monitoring undervoltage
and overvoltage conditionsfor both positive and negative
supplies. Accurate trip-point setting is facilitated by the
internal 1.25V reference. Not only is trip-level accuracy
guaranteed to t1% over the commercial temperature
range, but the trip levels of all channels are guaranteed
to match each other within i1%. A fifth comparator
channel monitors microprocessor voltages and
generates delayed reset signals. The MAX8213 has
open-drain outputs, while active puiI-up outputs are in-
corporated in the MAX8214.
Applications
Microprocessor Voltage Monitoring
Precision Battery Monitoring
Over/Under/Window Voltage Detection
Industrial Controllers
Appliances
Telephones
Portable Computers
Mobile Radios
Portable Instruments
Automotive and Industrial Equipment
Features
. t1% Guaranteed Trip-Level Accuracy over
Commercial Temp. Range
. 4 Precision Comparators Plus Auxiliary
Comparator
. Buiit-ln Hysteresis
. internal 1.25V Reference with 0.75% Initial
Accuracy
t tth', Guaranteed Trlp-Level Matching Between
Channels over Commercial Temp. Range
. Wide Supply Range: 2.7V to 11V
. Controlled Comparator Response for
Glitch Immunity
. 33pA Max Supply Current Over Temp.
Ordering Information
PART TEMP. RANGE PlN-PACKAGE
MAX8213ACPE (YC) to +70'C 16 Plastic DIP
MAX8213BCPE JC to +70'C 16 Plastic DIP
Orderlng Informatlon contlnued on last page.
Typical Operating Circuit
Call toll free 1-800-998-8800 for free samples or literature.
215k, MAXIM - BATT-DEAD DEAD
. . . (IIN -
Pin Configuration W2 MAX8214
0UT2 - TBWNtETS
TO VIEW ht _ -
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REFERENCE}
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WLZBXVW/Efl-ZSXVW
MAX821 3/MAX821 4
Five Universal Voltage Monitors -
Complete Microprocessor Voltage Monitoring
ABSOLUTE MAXIMUM RATINGS
VDD to GND ............................... -0.3V, +12V
Digital Input Voltage to GND ........... -0.3V. (VDD + 0.3V)
VREF10 GND ........................ -0.3V, (VDD + 0.3V)
VOUT to GND ........................ -0.3V, (VDD + 0.3V)
Continuous Power Dissipation (TA = +70°C)
Plastic DIP (derate 10.53mW/“C above +70°C) ...... 84me
SO (derate 8.70mW/“C above +70°C) ............. 696mW
CERDIP (derate 10.00mW/°C above +70''C) ........ 800mW
Operating Temperature Ranges:
MAX821_C_ -_V__.__l___F__-- 0°C to +70‘C
MAX821_E_ ......................... -40''C to +85°C
MAX821_MJE ........................ -55'C to +125°C
Storage Temperature Range ............... -65''C to +165'C
Lead Temperature (soldering, 10sec) .............. +300°C
Stresses beyond those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. These are stress ratings only, and functional
operation t
the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(VDD = 5V, GND = 0V, TA = +2S'C, unless otherwise noted.)
PARAMETER T CONDITIONS MIN TYP MAX I UNITS
POWER SUPPLY
P __ S l V l MAX821_ _C 2.7 11
'fli1tflttjg) oltage TA=TMIN to TMAX re/AN11i11-t Z85 11 V
Positive Supply Current TA = TMIN to TMAX 16 33 pA
REFERENCE OUTPUT
l TA _ +25°C MAX821_A 075 0.75
MAX821_B -1.50 1.50
- MAX821_AC -1.00 100
Reference Variation MAX821_BC 200 2'00 %
Referred to 125V TA = TMIN to TMAX MAX821_AE -1 .25 1.25
MAX821_BE -2.50 2.50
MAX821_AM -1.50 1.50
MAX821_BM -3.00 3.00
'7/ierence Load TA = TMIN to TMAX 40 “A
Load Regulation 10 " pNiisA
Line Regulation 0.005 %L
OutputTempco 15 - ppm/"C
COMPARATOR INPUTS
V MAX821_A 090 0.90 l
TA = +25'C
MAX821_B -1.50 1.50
MAX821_AC -1.00 1.00
00mparator_s lN1-IN4 . MAX821_BC -2.00 2.00
Trip Level with Respect VIN decreasing %
101.25V(Note 2) TA = TMIN to TMAX MAX821_AE -1 .25 1.25
MAX821_BE -2.50 2.50
MAX821_AM -1.50 1.50
_ MAX821_BM -3.00 3.00
