MAX662AESA+ ,12V, 30mA Flash Memory Programming SupplyFeaturesThe MAX662A is a regulated +12V, 30mA-output, charge-♦ Regulated +12V ±5% Output Voltagepum ..
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MAX662ACPA+-MAX662ACSA+-MAX662ACSA+T-MAX662ACSA-T-MAX662AEPA+-MAX662AESA+-MAX662AESA+T
12V, 30mA Flash Memory Programming Supply
_______________General DescriptionThe MAX662A is a regulated +12V, 30mA-output, charge-
pump DC-DC converter. It provides the necessary +12V
±5% output to program byte-wide flash memories, and
requires no inductors to deliver a guaranteed 30mA out-
put from inputs as low as 4.75V. It fits into less than 0.1in2
of board space. The MAX662A is a pin-compatible
upgrade to the MAX662, and is recommended for new
designs. The MAX662A offers lower quiescent and shut-
down currents, and guarantees the output current over all
temperature ranges.
The MAX662A is the first charge-pump boost converter to
provide a regulated +12V output. It requires only a few
inexpensive capacitors, and the entire circuit is complete-
ly surface-mountable.
A logic-controlled shutdown pin that interfaces directly
with microprocessors reduces the supply current to only
0.5μA. The MAX662A comes in 8-pin narrow SO and DIP
packages.
For higher-current flash memory programming solutions,
refer to the data sheets for the MAX734 (120mA output
current, guaranteed) and MAX732 (200mA output cur-
rent, guaranteed) PWM, switch-mode DC-DC converters.
Or, refer to the MAX761 data sheet for a 150mA, PFM
switch-mode DC-DC converter that operates from inputs
as low as 2V.
________________________Applications+12V Flash Memory Programming Supplies
Compact +12V Op-Amp Supplies
Switching MOSFETs in Low-Voltage Systems
Dual-Output +12V and +20V Supplies
____________________________FeaturesRegulated +12V ±5% Output Voltage4.5V to 5.5V Supply Voltage RangeFits in 0.1in2Guaranteed 30mA OutputNo Inductor—Uses Only 4 Capacitors185μA Quiescent CurrentLogic-Controlled 0.5μA Shutdown8-Pin Narrow SO and DIP Packages
______________Ordering Information2V, 30mA Flash Memory
Programming Supply
________________________________________________________________Maxim Integrated Products1SHDN
GND
VOUT
VCCC2+
C2-
C1+
C1-
MAX662A
DIP/SOTOP VIEW
__________________Pin ConfigurationMAX662AFLASH
MEMORY
4.7μF
4.7μF0.22μF0.22μF
OUTPUT
12V ±5%
30mAVCC
SHDN
C1+
C1-
VOUT
C2-
C2+GND
INPUT
4.75V TO 5.5V
Vpp
__________Typical Operating Circuit
Call toll free 1-800-998-8800 for free samples or literature.19-0253; Rev 1; 8/94
EVALUATION KIT MANUAL
FOLLOWS DATA SHEET
PARTMAX662ACPA
MAX662ACSA
MAX662AC/D0°C to +70°C
0°C to +70°C
0°C to +70°C
TEMP. RANGEPIN-PACKAGE8 Plastic DIP
8 SO
Dice*
MAX662AEPA-40°C to +85°C8 Plastic DIP
MAX662AESA-40°C to +85°C8 SO
MAX662AMJA-55°C to +125°C8 CERDIP**
* Dice are tested at TA= +25°C.
** Contact factory for availability and processing to MIL-STD-883.
2V, 30mA Flash MemoryProgramming Supply_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS(Circuit of Figure 3a, VCC= 4.5V to 5.5V, TA= TMINto TMAX, unless otherwise noted.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
VCCto GND................................................................-0.3V to 6V
SHDN..........................................................-0.3V to (VCC+ 0.3V)
IOUTContinuous..................................................................50mA
Continuous Power Dissipation (TA= +70°C)
Plastic DIP (derate 9.09mW/°C above +70°C)............727mW
SO (derate 5.88mW/°C above +70°C).........................471mW
CERDIP (derate 8.00mW/°C above +70°C).................640mW
Operating Temperature Ranges
MAX662AC_A.....................................................0°C to +70°C
MAX662AE_A..................................................-40°C to +85°C
MAX662AMJA................................................-55°C to +125°C
Storage Temperature Range.............................-65°C to +160°C
Lead Temperature (soldering, 10sec).............................+300°C
MAX662AC/E
VCC= VSHDN= 5V,
IOUT= 30mA
VCC= 5V, IOUT= 30mA
MAX662AM
No load, VSHDN= 0V
No load, VSHDN= VCC
VCC= VSHDN= 5V
VCC= 5V, IOUT= 30mA
VCC= 5V, VSHDN= 0V
CONDITIONS0SHDN Pin Current-50-15-5
11.41212.60.4VILShutdown Input Threshold2.4VIH12RSWVCC-to-VOUTSwitch Impedance76Power Efficiency
VOUTOutput Voltage185500ICCSupply Current0.510Shutdown Current
kHz500fOSCOscillator Frequency
UNITSMINTYPMAXSYMBOLPARAMETER
__________________________________________Typical Operating Characteristics(Circuit of Figure 3a, TA = +25°C, unless otherwise noted.)
SUPPLY CURRENT vs. SUPPLY VOLTAGE
MAX662A-01
SUPPLY VOLTAGE (V)
(μ
TA = -55°C
TA = 0°C
TA = +25°C
TA = +125°C
OUTPUT VOLTAGE vs. OUTPUT CURRENT
MAX662A-02
OUTPUT CURRENT (mA)
E (V80
VCC = 5.5V
VCC = 5.0V
VCC = 4.75V
VCC = 4.5V
CONTINUOUS OUTPUT CURRENT MUST
NOT EXCEED 50mA ABS MAX LIMIT.
INTERMITTENT PEAK CURRENTS MAY
BE HIGHER.2060100
EFFICIENCY vs. LOAD CURRENTMAX662A-03
LOAD CURRENT (mA)
(%8030507090
VCC = 5.5V
VCC = 5.0V
VCC = 4.75V
VCC = 4.5V
CONTINUOUS OUTPUT CURRENT
MUST NOT EXCEED 50mA ABS MAX
LIMIT. INTERMITTENT PEAK
CURRENTS MAY BE HIGHER.
0mA ≤IOUT≤30mA,
VCC= 4.75V to 5.5V
0mA ≤IOUT≤20mA
0mA ≤IOUT≤24mA,
VCC= 4.75V to 5.5V
0mA ≤IOUT≤16mA
MAX662AC/E
MAX662AM12.5
2V, 30mA Flash MemoryProgramming Supply
_______________________________________________________________________________________3
LOAD-TRANSIENT RESPONSEA: OUTPUT CURRENT, 20mA/div, IOUT = 0mA to 30mA
B: OUTPUT VOLTAGE RIPPLE, 100mV/div, VCC = 5.0V
1ms/div
0mA
_____________________________Typical Operating Characteristics (continued)(Circuit of Figure 3a, TA= +25°C, unless otherwise noted.)
LINE-TRANSIENT RESPONSEA: SUPPLY VOLTAGE, 2V/div, VCC = 4.5V to 5.5V, IOUT = 30mA
B: OUTPUT VOLTAGE RIPPLE, 200mV/div
1ms/div
_____________________Pin Description
NAMEFUNCTIONC1-Negative terminal for the first charge-
pump capacitor
PINC1+Positive terminal for the first charge-
pump capacitorC2+Positive terminal for the second
charge-pump capacitorC2-Negative terminal for the second
charge-pump capacitorGNDGroundVOUT+12V Output Voltage. VOUT= VCC
when in shutdown mode.VCCSupply Voltage
Active-high CMOS-logic level
Shutdown Input. SHDN is internally
pulled up to VCC. Connect to GND for
normal operation. In shutdown mode,
the charge pumps are turned off and
VOUT= VCC.
SHDN
MAX662A
C1-
C1+
C2-
C2+
C4
4.7μF
0.22μF
0.22μF
VCC
VCC
GND
OSCILLATOR
VREF
SHDN
VOUTC5
4.7μF
C3*
0.1μF
+12V
SWITCH CLOSURES SHOWN FOR CHARGE PUMP IN THE TRANSFER MODE
* C3 NOT REQUIRED. FOR MAX662 ONLY.
ERROR
AMP
Figure 1. Block Diagram
_______________Detailed DescriptionOperating PrincipleThe MAX662A provides a regulated 12V output voltage
at 30mA from a 5V ±5% power supply, making it ideal
for flash EEPROM programming applications. It uses
internal charge pumps and external capacitors to gen-
erate +12V, eliminating inductors. Regulation is provid-
ed by a pulse-skipping scheme that monitors the
output voltage level and turns on the charge pumps
when the output voltage begins to droop.
Figure 1 shows a simplified block diagram of the
MAX662A. When the S1 switches are closed and the
S2 switches are open, capacitors C1 and C2 are
charged up to VCC. The S1 switches are then opened
and the S2 switches are closed so that capacitors C1
and C2 are connected in series between VCCand
VOUT. This performs a voltage tripling function. A pulse-
skipping feedback scheme adjusts the output voltage
to 12V ±5%. The efficiency of the MAX662A with VCC=
5V and IOUT= 30mA is typically 76%. See the
Efficiency vs. Load Current graph in the Typical
Operating Characteristics.
During one oscillator cycle, energy is transferred from
the charge-pump capacitors to the output filter capaci-
tor and the load. The number of cycles within a given
time frame increases as the load current increases or
as the input supply voltage decreases. In the limiting
case, the charge pumps operate continuously, and the
oscillator frequency is nominally 500kHz.
Shutdown ModeThe MAX662A enters shutdown mode when SHDN is a
logic high. SHDN is a TTL/CMOS-compatible input sig-
nal that is internally pulled up to VCC. In shutdown
mode, the charge-pump switching action is halted and
VINis connected to VOUTthrough a 1kΩswitch. When
entering shutdown, VOUTdeclines to VCCin typically
13ms. Connect SHDN to ground for normal operation.
When VCC= 5V, it takes typically 400μs for the output
to reach 12V after SHDN goes low (Figure 2).
__________Applications Information
Compatibility with MAX662The MAX662A is a 100%-compatible upgrade of the
MAX662. The MAX662A does not require capacitor C3,
although its presence does not affect performance.
Capacitor Selection
Charge-Pump Capacitors, C1 and C2The capacitance values of the charge-pump capacitors
C1 and C2 are critical. Use ceramic or tantalum capaci-
tors in the 0.22μF to 1.0μF range. For applications requir-
ing operation over extended and/or military temperature
ranges, use 1.0μF tantalum capacitors for C1 and C2
(Figure 3b).
Input and Output Capacitors, C4 and C5The type of input bypass capacitor (C4) and output filter
capacitor (C5) affects performance. Tantalums, ceramics
or aluminum electrolytics are suggested. For smallest size,
use Sprague 595D475X9016A7 surface-mount capacitors,
which are 3.51mm x 1.81mm. For lowest ripple, use low-
ESR through-hole ceramic or tantalum capacitors. For low-
est cost, use aluminum electrolytic or tantalum capacitors.
Figure 3a shows the component values for proper opera-
tion over the commercial temperature range using mini-
mum board space. The input bypass capacitor (C4) and
output filter capacitor (C5) should both be at least 4.7μF
when using Sprague’s miniature 595D series of tantalum
chip capacitors. Figure 3b shows the suggested compo-
nent values for applications over extended and/or mili-
tary temperature ranges.
The values of C4 and C5 can be reduced to 2μF and
1μF, respectively, when using ceramic capacitors. If
using aluminum electrolytics, choose capacitance values
of 10μF or larger for C4 and C5. Note that as VCC
increases above 5V and the output current decreases,
the amount of ripple at VOUTincreases due to the slower
oscillator frequency combined with the higher input volt-
age. Increase the input and output bypass capacitance
to reduce output ripple.
Table 1 lists various capacitor suppliers.
2V, 30mA Flash Memory
Programming Supply_______________________________________________________________________________________Figure 2. MAX662A Exiting Shutdown
CIRCUIT OF FIGURE 3, VCC = 5V, IOUT = 200µA
12V
SHDN
VOUT
200µs/div
Layout ConsiderationsLayout is critical, due to the MAX662A’s high oscillator
frequency. Good layout ensures stability and helps
maintain the output voltage under heavy loads. For best
performance, use very short connections to the capaci-
tors. The order of importance is: C4, C5, C1, C2.
Flash EEPROM ApplicationsThe circuit of Figure 3a is a +12V ±5% 30mA flash
EEPROM programming power supply. A microproces-
sor controls the programming voltage via the SHDN
pin. When SHDN is low, the output voltage (which is
connected to the flash memory VPPsupply-voltage pin)
rises to +12V to facilitate programming the flash memo-
ry. When SHDN is high, the output voltage is connected
to VINthrough an internal 1kΩresistor.
Paralleling DevicesTwo MAX662As can be placed in parallel to increase
output drive capability. The VCC, VOUT, and GND pins
can be paralleled, reducing pin count. Use a single
bypass capacitor and a single output filter capacitor
with twice the capacitance value if the two devices can
be placed close to each other. If the MAX662As cannot
be placed close together, use separate bypass and
output capacitors. The amount of output ripple
observed will determine whether single input bypass
and output filter capacitors can be used. Under certain
conditions, one device may supply the total output cur-
rent. Therefore, regardless of the number of devices in
parallel, the maximum continuous current must not
exceed 50mA.
12V and 20V Dual-Output Power SupplyUsing the charge-pump voltage-doubler circuit of
Figure 4, the MAX662A can produce a +20V supply
from a single +5V supply. Figure 5 shows the current
capability of the +20V supply.
2V, 30mA Flash Memory
Programming Supply
_______________________________________________________________________________________5
Table 1. Capacitor SuppliersMAX662A
*C1
1.0μF
C2-
C2+
VCC
VOUT
PROGRAMMING
CONTROL
DIRECT FROM
*C2
1.0μF
VIN
4.75V TO 5.5V
*C4
22μF
VOUT
+12V ±5%
AT 30mA
*C5
22μF
C1+
C1-
SHDN
GND
*SPRAGUE 595D SERIES OR EQUIVALENT
MAX662A
C1
0.22μF
C2-
C2+
VCC
VOUT
PROGRAMMING
CONTROL
DIRECT FROM
C2
0.22μF
VIN
4.75V TO 5.5V
C4
4.7μFVOUT
+12V ±5%
AT 30mAC5
4.7μF
C1+
C1-
SHDN
GND
Figure 3a. Flash EEPROM Programming Power Supply for
Commercial Temperature Range Applications
Figure 3b. Flash EEPROM Programming Power Supply for
Extended and/or Military Temperature Range Applications
SupplierPhone NumberFax NumberCapacitorCapacitor Type*GRM42-6Z5U224M500.22μF Ceramic (SM)
Murata Erie(814) 237-1431(814) 238-0490
RPE123Z5U105M50V1.0μF Ceramic (TH)
595D475X9016A74.7μF Tantalum (SM)
Sprague Electric(603) 224-1961
(207) 324-4140
(603) 224-1430
(207) 324-7223595D105X9016A71.0μF Tantalum (SM)
*Note: (SM) denotes surface-mount component, (TH) denotes through-hole component.
2V, 30mA Flash MemoryProgramming Supply_______________________________________________________________________________________MAX662A0.22μF
C2-
C2+
VOUT
0.22μF
VIN =
5V ±5%
1μF
1μF
20V
OUTPUT
1μF
C1+
C1-
SHDN
VCC
12V
OUTPUT
GND
1N5818
1N5818
2μF
Figure 4. +12V and +20V Dual Supply from a +5V Input
16.030
MAX662AFIG 5
20V OUTPUT CURRENT (mA)
(V
CIRCUIT OF FIGURE 4
VCC = 4.75V
TA = +25°C
WITH +12V OUTPUT
UNLOADED
WITH 34mA LOAD
ON +12V OUTPUT
Figure 5. +20V Supply Output Current Capability
___________________Chip Topography
C1-
SHDNVCC
C2+C2-C1+
GNDVOUT
0.086"
(2.184mm)086"
(2.184mm)TRANSISTOR COUNT: 225
SUBSTRATE CONNECTED TO VOUT
