MAX5969BETB+T ,IEEE 802.3af/at-Compliant, Powered Device Interface Controllers with Integrated Power MOSFETFeaturesS IEEE 802.3af/at CompliantThe MAX5969A/MAX5969B provide a complete interface ® S 2-Event C ..
MAX5976BETE+T ,2.7V to 18V, 7A, Hot-Swap SolutionsApplicationsNote: All devices are specified over the -40°C to +85°C operating temperature range.RAI ..
MAX5977AETP+ ,1V to 16V, Single-Channel, Hot-Swap Controllers with Precision Current-Sensing OutputApplicationsturn-off and a lower slow-trip threshold for a delayed turn-off.ServersExceeding either ..
MAX5981AETE+ ,IEEE 802.3af/at-Compliant, Powered Device Interface Controllers with Integrated Power MOSFETfeatures an LED driver that is auto-matically activated during sleep mode. During sleep PIN- SLEEP ..
MAX5981BETE+ ,IEEE 802.3af/at-Compliant, Powered Device Interface Controllers with Integrated Power MOSFETELECTRICAL CHARACTERISTICS(V = (V - V ) = 48V, R = 24.9kω, R = 615ω, and R = 60.4kω. RTN, WAD, PG, ..
MAX5982AETE+ ,IEEE 802.3af/at-Compliant, Powered Device Interface Controllers with Integrated 70W High-Power MOSFETFeaturesS Sleep Mode and Ultra-Low-Power Sleep The MAX5982A/MAX5982B/MAX5982C provide a com-(MAX598 ..
MAZ8180-M ,Silicon planar typeelectrical characteristicsZ Zwithin part numbersReverse current I V ··············· Specified value ..
MAZ8200G ,Silicon planar typeElectrical Characteristics T = 25°C±3°CaParameter Symbol Conditions Min Typ Max UnitForward voltag ..
MAZ8200G ,Silicon planar typeAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating UnitRepetitive peak forward current I 20 ..
MAZ8200-H ,Silicon planar typeFeatures•Extremely low noise voltage caused from the diode (2.4V to 39V,1/3 to 1/10 of our conventi ..
MAZ8200-L ,Silicon planar typeelectrical characteristicsZ Zwithin part numbersReverse current I V ··············· Specified value ..
MAZ8200-M ,Silicon planar typeElectrical Characteristics T = 25°CaParameter Symbol Conditions Min Typ Max UnitForward voltage V ..
MAX5969AETB+-MAX5969BETB+T
IEEE 802.3af/at-Compliant, Powered Device Interface Controllers with Integrated Power MOSFET
IEEE 802.3af/at-Compliant, Powered Device Interface
Controllers with Integrated Power MOSFET
MAX5969A/MAX5969B
EVALUATION KIT AVAILABLE General Description
The MAX5969A/MAX5969B provide a complete interface
for a powered device (PD) to comply with the IEEE®
802.3af/at standard in a power-over-Ethernet (PoE)
system. The MAX5969A/MAX5969B provide the PD
with a detection signature, classification signature,
and an integrated isolation power switch with inrush
current control. During the inrush period, the MAX5969A/
MAX5969B limit the current to less than 180mA before
switching to the higher current limit (720mA to 880mA)
when the isolation power MOSFET is fully enhanced. The
devices feature an input UVLO with wide hysteresis and
long deglitch time to compensate for twisted-pair cable
resistive drop and to assure glitch-free transition during
power-on/-off conditions. The MAX5969A/MAX5969B
can withstand up to 100V at the input.
The MAX5969A/MAX5969B support a 2-event classifica-
tion method as specified in the IEEE 802.3at standard
and provide a signal to indicate when probed by Type 2
power-sourcing equipment (PSE). The devices detect the
presence of a wall adapter power-source connection and
allow a smooth switchover from the PoE power source to
the wall power adapter.
The MAX5969A/MAX5969B also provide a power-
good (PG) signal, two-step current limit and foldback,
overtemperature protection, and di/dt limit.
The MAX5969A/MAX5969B are available in a space-
saving, 10-pin, 3mm x 3mm, TDFN power package. These
devices are rated over the -40NC to +85NC extended
temperature range.
Applications
IEEE 802.3af/at Powered Devices
IP Phones, Wireless Access Nodes, IP Security
Cameras
WiMAX® Base Station
Features
S IEEE 802.3af/at Compliant
S 2-Event Classification
S Simplified Wall Adapter Interface
S PoE Classification 0 to 5
S 100V Input Absolute Maximum Rating
S Inrush Current Limit of 180mA Maximum
S Current Limit During Normal Operation Between 720mA and 880mA
S Current Limit and Foldback
S Legacy UVLO at 36V (MAX5969A)
S IEEE 802.3af/at-Compliant, 40V UVLO (MAX5969B)
S Overtemperature Protection
S Thermally Enhanced, 3mm x 3mm, 10-Pin TDFN
+Denotes a lead(Pb)-free/RoHS-compliant package.
*EP = Exposed pad.
Ordering Information
Pin Configuration
IEEE is a registered service mark of the Institute of Electrical
and Electronics Engineers, Inc.
WiMAX is a registered certification mark and registered
PARTTEMP RANGEPIN-
PACKAGE
UVLO
THRESHOLD
(V)
MAX5969AETB+-40NC to +85NC10 TDFN-EP*35.4
MAX5969BETB+-40NC to +85NC10 TDFN-EP*38.6
CLS
WAD
VDD
N.C.
I.C.
EP*
*EP = EXPOSED PAD. CONNECT TO VSS.
MAX5969A
MAX5969B2ECDETRTNVSS
TDFN(3mm × 3mm)
TOP VIEW
IEEE 802.3af/at-Compliant, Powered Device Interface
Controllers with Integrated Power MOSFET
MAX5969A/MAX5969B
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
VDD to VSS ..........................................................-0.3V to +100V
DET, RTN, WAD, PG, 2EC to VSS .......................-0.3V to +100V
CLS to VSS ..............................................................-0.3V to +6V
Maximum Current on CLS (100ms maximum) .................100mA
Continuous Power Dissipation (TA = +70NC) (Note 1)10-Pin TDFN (derate 24.4mW/NC above +70NC)Multilayer Board ........................................................1951mW
Operating Temperature Range ..........................-40NC to +85NC
Maximum Junction Temperature .....................................+150NC
Storage Temperature Range ............................-65NC to +150NC
Soldering Temperature (reflow) .................................... +260NC
ELECTRICAL CHARACTERISTICS
(VIN = (VDD - VSS) = 48V, RDET = 24.9kω, RCLS = 619ω. RTN, WAD, PG, and 2EC unconnected, all voltages are referenced to VSS,
unless otherwise noted. TA = TJ = -40NC to +85NC, unless otherwise noted. Typical values are at TA = +25NC.) (Note 3)
ABSOLUTE MAXIMUM RATINGS
PACKAGE THERMAL CHARACTERISTICS (Note 2)
Junction-to-Ambient Thermal Resistance (θJA) ..................4NC/W
Junction-to-Case Thermal Resistance (θJC) .......................9NC/W
Note 1: Maximum power dissipation is obtained using JEDEC JESD51-5 and JESD51-7 specifications.
Note 2: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-
tutorial.
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITS
DETECTION MODE
Input Offset CurrentIOFFSETVIN = 1.4V to 10.1V (Note 4)10FA
Effective Differential Input
ResistancedRVIN = 1.4V up to 10.1V with 1V step,
VDD = RTN = WAD = PG = 2EC (Note 5)23.9525.0025.5kI
CLASSIFICATION MODE
Classification Disable
ThresholdVTH,CLSVIN rising (Note 6)22.022.823.6V
Classification Stability Time0.2ms
Classification CurrentICLASS
VIN = 12.5V to
20.5V, VDD =
RTN = WAD =
PG = 2EC
Class 0, RCLS = 619I03.96
Class 1, RCLS = 117I9.1211.88
Class 2, RCLS = 66.5I17.219.8
Class 3, RCLS = 43.7I26.329.7
Class 4, RCLS = 30.9I36.443.6
Class 5, RCLS = 21.3I52.763.3
TYPE 2 (802.3at) CLASSIFICATION MODE
Mark Event ThresholdVTHMVIN falling10.110.711.6V
Hysteresis on Mark Event
Threshold0.84V
Mark Event CurrentIMARKVIN falling to enter mark event, 5.2V P VIN
P 10.1V0.250.85mA
IEEE 802.3af/at-Compliant, Powered Device Interface
Controllers with Integrated Power MOSFET
MAX5969A/MAX5969B
ELECTRICAL CHARACTERISTICS (continued)
(VIN = (VDD - VSS) = 48V, RDET = 24.9kω, RCLS = 619ω. RTN, WAD, PG, and 2EC unconnected, all voltages are referenced to VSS,
unless otherwise noted. TA = TJ = -40NC to +85NC, unless otherwise noted. Typical values are at TA = +25NC.) (Note 3)
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITS
Reset Event ThresholdVTHRVIN falling2.845.2V
POWER MODE
VIN Supply Voltage Range60V
VIN Supply CurrentIQMeasured at VDD0.270.55mA
VIN Turn-On VoltageVONVIN risingMAX5969A34.335.436.6VMAX5969B37.238.640
VIN Turn-Off VoltageVOFFVIN falling30V
VIN Turn-On/-Off Hysteresis
(Note 7)VHYST_UVLOMAX5969A4.2VMAX5969B7.3
VIN Deglitch TimetOFF_DLYVIN falling from 40V to 20V (Note 8)30120Fs
Inrush to Operating Mode
DelaytDELAYtDELAY = minimum PG current pulse width
after entering into power mode 8096112ms
Isolation Power MOSFET
On-ResistanceRON_ISOIRTN = 600mA
TJ = +25NC0.50.7TJ = +85NC0.651
TJ = +125NC0.8
RTN Leakage CurrentIRTN_LKGVRTN = 12.5V to 30V10FA
CURRENT LIMIT
Inrush Current LimitIINRUSHDuring initial turn-on period,
VRTN = 1.5V90135180mA
Current Limit During Normal
OperationILIMAfter inrush completed,
VRTN = 1V720800880mA
Foldback Threshold VRTN (Note 9)1316.5V
LOGIC
WAD Detection ThresholdVWAD-REFVWAD rising, VIN = 14V to 48V (referenced
to RTN)8910WAD Detection Threshold
Hysteresis
VWAD falling, VRTN = 0V, VSS
unconnected0.725
WAD Input CurrentIWAD-LKGVWAD = 10V (referenced to RTN)3.5FA
2EC Sink CurrentV2EC = 3.5V (referenced to RTN), VSS
unconnected11.52.25mA
2EC Off-Leakage CurrentV2EC = 48V 1FA
PG Sink CurrentVRTN = 1.5V, VPG = 0.8V, during inrush
period125230375FA
PG Off-Leakage CurrentVPG = 48V1FA
THERMAL SHUTDOWN
Thermal-Shutdown ThresholdTSDTJ rising+140NC
Thermal-Shutdown HysteresisTJ falling28NC
IEEE 802.3af/at-Compliant, Powered Device Interface
Controllers with Integrated Power MOSFET
MAX5969A/MAX5969B
ELECTRICAL CHARACTERISTICS (continued)
(VIN = (VDD - VSS) = 48V, RDET = 24.9kω, RCLS = 619ω. RTN, WAD, PG, and 2EC unconnected, all voltages are referenced to VSS,
unless otherwise noted. TA = TJ = -40NC to +85NC, unless otherwise noted. Typical values are at TA = +25NC.) (Note 3)
Note 3: All devices are 100% production tested at TA = +25NC. Limits over temperature are guaranteed by design.
Note 4: The input offset current is illustrated in Figure 1.
Note 5: Effective differential input resistance is defined as the differential resistance between VDD and VSS. See Figure 1.
Note 6: Classification current is turned off whenever the device is in power mode.
Note 7: UVLO hysteresis is guaranteed by design, not production tested.
Note 8: A 20V glitch on input voltage that takes VDD below VON shorter than or equal to tOFF_DLY does not cause the MAX5969A/
MAX5969B to exit power-on mode.
Note 9: In power mode, current-limit foldback is used to reduce the power dissipation in the isolation MOSFET during an overload
condition across VDD and RTN.
Figure 1. Effective Differential Input Resistance/Offset Current
IIN
IINi + 1
IINi
IOFFSET
dRiVINiVINi + 1
IOFFSET = IINi - VINi
dRi
dRi = (VINi + 1 - VINi) = 1V (IINi + 1 - IINi) (IINi + 1 - IINi)
VIN
IEEE 802.3af/at-Compliant, Powered Device Interface
Controllers with Integrated Power MOSFET
MAX5969A/MAX5969B
Typical Operating Characteristics
(VIN = (VDD - VSS) = 54V, RDET = 24.9kω, RCLS = 615ω. RTN, WAD, PG, and 2EC unconnected; all voltages are referenced to VSS.)
INPUT CURRENT (DETECTION)
vs. INPUT VOLTAGE
MAX5969A toc01
VIN (V)
IIN
(mA)642
IIN = IVDD + IDET
RDET = 24.9kI
RTN = 2EC = PG = WAD = VDD
-40°C P TA P +85NC
SIGNATURE RESISTANCE
vs. INPUT VOLTAGE
SIGNATURE
(k642
MAX5969A toc02
VIN (V)
IIN = IVDD + IDET
RDET = 24.9kI
RTN = 2EC = PG = WAD = VDD
TA = -40NC
TA = +85NC
TA = +25NC
INPUT OFFSET CURRENT
vs. INPUT VOLTAGE
INPUT OFFSET CURRENT (µA)642
MAX5969A toc03
VIN (V)
TA = +85NC
TA = -40NC
TA = +25NC
INPUT CURRENT (CLASSIFICATION)
vs. INPUT VOLTAGE
MAX5969A toc04
VIN (V)
IIN
(mA)2015105
CLASS 5
CLASS 4
CLASS 3
CLASS 2
CLASS 1
CLASS 0
CLASSIFICATION SETTLING TIME
MAX5969A toc05
VIN
10V/div
IIN
200mA/div
VCLS
1V/div
100µs/div
RCLS = 30.9I
2EC SINK CURRENT vs. 2EC VOLTAGE
V2EC (V)
I2EC
(mA)40302010
MAX5969A toc06
VSS UNCONNECTED
V2EC REFERENCED TO RTN
VWAD = 14V
TA = -40NC
TA = +85NC
TA = +25NC
PG SINK CURRENT vs. PG VOLTAGE
IPG
(µA)40302010
MAX5969A toc07
TA = -40NC
TA = +85NC
TA = +25NC
INRUSH CURRENT LIMIT
vs. RTN VOLTAGE
MAX5969A toc08
INRUSH CURRENT LIMIT (mA)40302010
NORMAL OPERATION CURRENT LIMIT
vs. RTN VOLTAGE
MAX5969A toc09
CURRENT LIMIT (mA)40102030
060
IEEE 802.3af/at-Compliant, Powered Device Interface
Controllers with Integrated Power MOSFET
MAX5969A/MAX5969B
Typical Operating Characteristics (continued)
(VIN = (VDD - VSS) = 54V, RDET = 24.9kω, RCLS = 615ω. RTN, WAD, PG, and 2EC unconnected; all voltages are referenced to VSS.)
INRUSH CONTROL WAVEFORM WITH
TYPE 2 CLASSIFICATION
MAX5969A toc10
VRTN
50V/div
IRTN
100mA/div
VDD
50V/div
V2EC
50V/div
200µs/div
USING TYPICAL APPLICATION CIRCUIT
2EC PULLED UP TO VDD WITH 10kI
ENTERING POWER MODE WITH
TYPE 2 CLASSIFICATION
MAX5969A toc11
VPG
10V/div0V
VRTN
50V/div
IRTN
200mA/div
VDD
50V/div
20ms/div
V2EC
40V/div
USING TYPICAL APPLICATION CIRCUIT
2EC PULLED UP TO VDD WITH 10kI
IEEE 802.3af/at-Compliant, Powered Device Interface
Controllers with Integrated Power MOSFET
MAX5969A/MAX5969B
Pin Description
PINNAMEFUNCTIONVDD Positive Supply Input. Connect a 68nF (min) bypass capacitor between VDD and VSS.DETDetection Resistor Input. Connect a signature resistor (RDET = 24.9kI) from DET to VDD. N.C.No Connection. Not internally connected.I.C.Internally Connected. Leave unconnected. VSSNegative Supply Input. VSS connects to the source of the integrated isolation n-channel power
MOSFET. RTN
Drain of Isolation MOSFET. RTN connects to the drain of the integrated isolation n-channel power
MOSFET. Connect RTN to the downstream DC-DC converter ground as shown in the Typical
Application Circuit.WAD
Wall Power Adapter Detector Input. Wall adapter detection is enabled the moment VDD - VSS crosses
the mark event threshold. Detection occurs when the voltage from WAD to RTN is greater than 9V.
When a wall power adapter is present, the isolation n-channel power MOSFET turns off, 2EC current
sink turns on. Connect WAD directly to RTN when the wall power adapter or other auxiliary power
source is not used. PG
Open-Drain Power-Good Indicator Output. PG sinks 230FA to disable the downstream DC-DC converter
while turning on the hot-swap MOSFET switch until the hot-swap switch is fully on. PG current sink is
disabled during detection, classification, and in the steady-state power mode. 2EC
Active-Low 2-Event Classification Detect or Wall Adapter Detect Output. A 1.5mA current sink is
enabled at 2EC when a Type 2 PSE or a wall adapter is detected. When powered by a Type 2 PSE, the
2EC current sink is enabled and latched low after the isolation MOSFET is fully on until VIN drops below
the UVLO threshold. 2EC also asserts when a wall adapter supply, typically greater than 9V, is applied
between WAD and RTN. 2EC is not latched if asserted by WAD. CLS
Classification Resistor Input. Connect a resistor (RCLS) from CLS to VSS to set the desired classification
current. See the classification current specifications in the Electrical Characteristics table to find the resis-
tor value for a particular PD classification.EP
Exposed Pad. Do not use EP as an electrical connection to VSS. EP is internally connected to VSS
through a resistive path and must be connected to VSS externally. To optimize power dissipation, solder
the exposed pad to a large copper power plane.
IEEE 802.3af/at-Compliant, Powered Device Interface
Controllers with Integrated Power MOSFET
MAX5969A/MAX5969B
Simplified Block Diagram
1.5mA
46µA
VDDCLS1.23V
PSE 2
2EC
VDD
11.6V/10.8V
11.6V/4V
SET
CLR
DET
VSS
5V REGULATOR
1.23V
22.8V/22V
THERMAL
SHUTDOWN
VDD
VDD
VDD
WAD
WAPD
RTN
VON/VOFF
VDD
SET
CLR
230µA
CLASSIFICATION
ISWITCH
K x ISWITCH
ISOLATION
SWITCH
MUX135mA
VON/VOFF = 38.6V/31V FOR MAX5969B
VON/VOFF = 35.4V/31V FOR MAX5969A
760mAI1
1/K
MAX5969A
MAX5969B
95ms
HSON
15V
IREF
