MAX5883EGM ,3.3V, 12-Bit, 200Msps High Dynamic Performance DAC with CMOS InputsApplications1 36N.C. B8Base Stations: Single/Multicarrier UMTS, 2 35 B9N.C.CDMAXOR 3 34 B104 33Comm ..
MAX5883EGM+D ,3.3V, 12-Bit, 200Msps High Dynamic Performance DAC with CMOS InputsApplications1 36N.C. B8Base Stations: Single/Multicarrier UMTS, 2 35 B9N.C.CDMAXOR 3 34 B104 33Comm ..
MAX5884EGM ,3.3V, 14-Bit, 200Msps High Dynamic Performance DAC with CMOS InputsApplications1 36N.C. B10Base Stations: Single-/Multicarrier UMTS, N.C. 2 35 B11CDMA, GSM XOR 3 34 B ..
MAX5884EGM+D ,3.3V, 14-Bit, 200Msps High Dynamic Performance DAC with CMOS InputsApplications1 36N.C. B10Base Stations: Single-/Multicarrier UMTS, N.C. 2 35 B11CDMA, GSM XOR 3 34 B ..
MAX5885EGM+D ,3.3V, 16-Bit, 200Msps High Dynamic Performance DAC with CMOS InputsApplications1 36B1 B12Base Stations: Single/Multicarrier UMTS, 2 35B0 B13CDMA, GSM XOR 3 34 B14Comm ..
MAX5886EGK ,3.3V, 12-Bit, 500Msps High Dynamic Performance DAC with Differential LVDS InputsApplicationsEPN.C. 1 51 B7NBase Stations: Single/Multicarrier UMTS, N.C. 2 50 B7PN.C. 3 49 B8NCDMA, ..
MAZ8051-H ,Silicon planar typeElectrical characteristics within part numbers T = 25°CaTemperaturecoefficient ofZener voltage Rev ..
MAZ8051-L ,Silicon planar typeElectrical Characteristics T = 25°CaParameter Symbol Conditions Min Typ Max UnitForward voltage V ..
MAZ8051M ,Silicon planar typeZener DiodesMAZ8000 SeriesSilicon planar typeUnit : mmFor stabilization of power supplyKA
MAZ8051-M ,Silicon planar typeElectrical Characteristics T = 25°CaParameter Symbol Conditions Min Typ Max UnitForward voltage V ..
MAZ8056-H ,Silicon planar typeAbsolute Maximum Ratings T = 25°CaMarking SymbolParameter Symbol Rating UnitRefer to the list of t ..
MAZ8056-L ,Silicon planar typeElectrical characteristics within part numbers T = 25°CaTemperaturecoefficient ofZener voltage Rev ..
MAX5883EGM
3.3V, 12-Bit, 200Msps High Dynamic Performance DAC with CMOS Inputs
General DescriptionThe MAX5883 is an advanced, 12-bit, 200Msps digital-
to-analog converter (DAC) designed to meet the
demanding performance requirements of signal synthe-
sis applications found in wireless base stations and
other communications applications. Operating from a
single 3.3V supply, this DAC offers exceptional dynamic
performance such as 77dBc spurious-free dynamic
range (SFDR) at fOUT= 10MHz. The DAC supports
update rates of 200Msps at a power dissipation of less
than 200mW.
The MAX5883 utilizes a current-steering architecture,
which supports a full-scale output current range of 2mA
to 20mA, and allows a differential output voltage swing
between 0.1VP-Pand 1VP-P.
The MAX5883 features an integrated 1.2V bandgap
reference and control amplifier to ensure high accuracy
and low noise performance. Additionally, a separate
reference input pin enables the user to apply an exter-
nal reference source for optimum flexibility and to
improve gain accuracy.
The digital and clock inputs of the MAX5883 are
designed for CMOS-compatible voltage levels. The
MAX5883 is available in a 48-pin QFN package with an
exposed paddle (EP) and is specified for the extended
industrial temperature range (-40°C to +85°C).
Refer to the MAX5884 and MAX5885 data sheets for
pin-compatible 14- and 16-bit versions of the MAX5883.
For LVDS high-speed versions, refer to the MAX5886,
MAX5887, and MAX5888 data sheets.
ApplicationsBase Stations: Single/Multicarrier UMTS,
CDMA
Communications: LMDS, MMDS, Point-to-Point
Microwave
Digital Signal Synthesis
Automated Test Equipment (ATE)
Instrumentation
Features200Msps Output Update RateSingle 3.3V Supply OperationExcellent SFDR and IMD Performance
SFDR = 77dBc at fOUT= 10MHz (to Nyquist)
IMD = -86dBc at fOUT= 10MHz
ACLR = 71dB at fOUT= 30.72MHz2mA to 20mA Full-Scale Output CurrentCMOS-Compatible Digital and Clock InputsOn-Chip 1.2V Bandgap ReferenceLow Power Dissipation48-Pin QFN-EP Package
MAX5883
3.3V, 12-Bit, 200Msps High Dynamic
Performance DAC with CMOS Inputs
Ordering Information19-2824; Rev 1; 12/03
Pin Configuration*EP = Exposed paddle.
MAX5883
3.3V, 12-Bit, 200Msps High Dynamic
Performance DAC with CMOS Inputs
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS(AVDD= DVDD= VCLK = 3.3V, AGND = DGND = CLKGND = 0V, external reference, VREFIO= 1.25V, RL= 50Ω, IOUT= 20mA, fCLK=
200Msps, TA= TMINto TMAX, unless otherwise noted. ≥+25°C guaranteed by production test, <+25°C guaranteed by design and
characterization. Typical values are at TA= +25°C.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
AVDD, DVDD, VCLK to AGND................................-0.3V to +3.9V
AVDD, DVDD, VCLK to DGND...............................-0.3V to +3.9V
AVDD, DVDD, VCLK to CLKGND...........................-0.3V to +3.9V
AGND, CLKGND to DGND....................................-0.3V to +0.3V
DACREF, REFIO, FSADJ to AGND.............-0.3V to AVDD+ 0.3V
IOUTP, IOUTN to AGND................................-1V to AVDD+ 0.3V
CLKP, CLKN to CLKGND...........................-0.3V to VCLK + 0.3V
B0–B11, SEL0, PD, XOR to DGND.............-0.3V to DVDD+ 0.3V
Continuous Power Dissipation (TA= +70°C)
48-Pin QFN (derate 27mW/°C above +70°C)............2162.2mW
Thermal Resistance (θJA)..............................................+37°C/W
Operating Temperature Range ..........................-40°C to +85°C
Junction Temperature .....................................................+150°C
Storage Temperature Range ............................-60°C to +150°C
Lead Temperature (soldering, 10s) ................................+300°C
MAX5883
3.3V, 12-Bit, 200Msps High Dynamic
Performance DAC with CMOS Inputs
ELECTRICAL CHARACTERISTICS (continued)(AVDD= DVDD= VCLK = 3.3V, AGND = DGND = CLKGND = 0V, external reference, VREFIO= 1.25V, RL= 50Ω, IOUT= 20mA, fCLK=
200Msps, TA= TMINto TMAX, unless otherwise noted. ≥+25°C guaranteed by production test, <+25°C guaranteed by design and
characterization. Typical values are at TA= +25°C.)
MAX5883
3.3V, 12-Bit, 200Msps High Dynamic
Performance DAC with CMOS Inputs
Note 1:Nominal full-scale current IOUT= 32 ✕IREF.
Note 2:This parameter does not include update-rate depending effects of sin(x)/x filtering inherent in the MAX5883.
Note 3:Parameter measured single ended into a 50Ωtermination resistor.
Note 4:Parameter guaranteed by design.
Note 5:Parameter defined as the change in midscale output caused by a ±5% variation in the nominal supply voltage.
ELECTRICAL CHARACTERISTICS (continued)(AVDD= DVDD= VCLK = 3.3V, AGND = DGND = CLKGND = 0V, external reference, VREFIO= 1.25V, RL= 50Ω, IOUT= 20mA, fCLK=
200Msps, TA= TMINto TMAX, unless otherwise noted. ≥+25°C guaranteed by production test, <+25°C guaranteed by design and
MAX5883
3.3V, 12-Bit, 200Msps High Dynamic
Performance DAC with CMOS Inputs
Typical Operating Characteristics(AVDD= DVDD= VCLK = 3.3V, external reference, VREFIO= 1.25V, RL= 50Ω, IOUT= 20mA, TA= +25°C, unless otherwise noted.)
MAX5883
3.3V, 12-Bit, 200Msps High Dynamic
Performance DAC with CMOS Inputs
Typical Operating Characteristics (continued)(AVDD= DVDD= VCLK = 3.3V, external reference, VREFIO= 1.25V, RL= 50Ω, IOUT= 20mA, TA= +25°C, unless otherwise noted.)
MAX5883
3.3V, 12-Bit, 200Msps High Dynamic
Performance DAC with CMOS Inputs
MAX5883
3.3V, 12-Bit, 200Msps High Dynamic
Performance DAC with CMOS InputsFigure 1. Simplified MAX5883 Block Diagram
