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MAX2900ETI+MAXIMN/a2000avai200mW Single-Chip Transmitter ICs for 868MHz/915MHz ISM Bands
MAX2900ETI+ |MAX2900ETIMAXN/a185avai200mW Single-Chip Transmitter ICs for 868MHz/915MHz ISM Bands
MAX2900ETI+TMAXIMN/a2avai200mW Single-Chip Transmitter ICs for 868MHz/915MHz ISM Bands


MAX2900ETI+ ,200mW Single-Chip Transmitter ICs for 868MHz/915MHz ISM BandsApplicationsPART TEMP RANGE PIN-PACKAGEAutomatic Meter Reading MAX2900ETI+ -40°C to +85°C 28 QFN-EP ..
MAX2900ETI+ ,200mW Single-Chip Transmitter ICs for 868MHz/915MHz ISM BandsELECTRICAL CHARACTERISTICS(V = +2.7V to +4.5V, EN = OOKIN = REFEN = high, T = -40°C to +85°C. Typic ..
MAX2900ETI+T ,200mW Single-Chip Transmitter ICs for 868MHz/915MHz ISM BandsFeaturesThe MAX2900–MAX2904 complete single-chip 200mW ♦ Versions for U.S. 902MHz to 928MHz Band an ..
MAX291CPA ,8th-Order, Lowpass, Switched-Capacitor FiltersFeatures . 8th-Order Lowpass Filters: Butterworth (MAX291/MAX295) Bessel (MAX292IMAX296) . ..
MAX291CPA ,8th-Order, Lowpass, Switched-Capacitor FiltersApplications ADC Anti-Aliasing Filter Noise Analysis DAC Post-Filtering 50Hz/60Hz Line- ..
MAX291CPA+ ,8th-Order, Lowpass, Switched-Capacitor FiltersELECTRICAL CHARACTERISTICS V+ = 5V, V- ' -5V. Wer output measured at OUT pm, 2tyd2 lyad resistor ..
MAX6126AASA25+ ,Ultra-High-Precision, Ultra-Low-Noise, Series Voltage ReferenceMAX6126 Ultra-High-Precision, Ultra-Low-Noise,Series Voltage Reference
MAX6126AASA50 ,Ultra-High-Precision, Ultra-Low-Noise, Series Voltage ReferenceApplicationsGNDS 4 5 I.C.*High-Resolution A/D and D/A ConvertersATE EquipmentSO/µ MAXHigh-Accuracy ..
MAX6126B25+ ,Ultra-High-Precision, Ultra-Low-Noise, Series Voltage ReferenceFeaturesThe MAX6126 is an ultra-low-noise, high-precision, low- ● Ultra-Low 1.3μV Noise (0.1Hz to 1 ..
MAX6126B30+ ,Ultra-High-Precision, Ultra-Low-Noise, Series Voltage ReferenceElectrical Characteristics—MAX6126_21 (V = 2.048V)OUT(V = 5V, C = 0.1μF, I = 0, T = T to T , unless ..
MAX6126B50 ,Ultra-High-Precision, Ultra-Low-Noise, Series Voltage ReferenceGeneral Description Beneits and
MAX6129AEUK25+ ,Ultra-Low-Power Series Voltage ReferenceELECTRICAL CHARACTERISTICS—MAX6129_21 (V = 2.048V)OUT(V = 2.5V, I = 0, T = T to T , unless otherwis ..


MAX2900ETI+-MAX2900ETI+T
200mW Single-Chip Transmitter ICs for 868MHz/915MHz ISM Bands
MAX2900–MAX2904
200mW Single-Chip Transmitter ICs for
868MHz/915MHz ISM Bands

General Description

The MAX2900–MAX2904 complete single-chip 200mW
transmitters are designed for use in the 868MHz/
915MHz frequency bands. The MAX2900/MAX2901/
MAX2902 are compliant with the FCC CFR47 part 15.247
902MHz to 928MHz ISM-band specifications. MAX2903/
MAX2904 are compliant with the ETSI EN330-220 speci-
fication for the European 868MHz ISM band.
These transmitter ICs offer a high level of integration
while minimizing the number of external components.
This is achieved by full integration of the transmit modu-
lator, power amplifier, RF VCO, 8-channel frequency syn-
thesizer, and baseband PN sequence lowpass filter. By
filtering the BPSK modulation, the spurious emissions are
reduced, enabling up to eight independent transmit
channels in the U.S. ISM band. Inputs are provided for
spread-spectrum BPSK, ASK, and OOK. FM can be
achieved by directly modulating the VCO. The devices
are intended primarily for use with an external differential
antenna.
Applications

Automatic Meter Reading
Wireless Security Systems/Alarms
Wireless Sensors
Wireless Data Networks
Wireless Building Control
Features
Versions for U.S. 902MHz to 928MHz Band and
European 868MHz Band
-7dBm to +23dBm Adjustable Differential RF
Output Power
+23dBm Output Power at 4.5V, +20dBm Output
Power at 3.0V
Support BPSK, OOK, ASK, and FM ModulationsModulation Filter for Direct Sequence BPSK up to
8Mchips/s
Fully Integrated VCO with On-Chip TankExtremely Low Frequency Pulling for OOK
Modulation (typ 60kHz peak, 5kHz RMS)
Integrated Frequency Synthesizer for up to
8 Channels (MAX2900)
+2.7V to +4.5V Supply OperationSmall 28-Pin QFN Package with Exposed Pad
(5mm ✕5mm)

REFEN
RLPF
VCC1
VREG
GND
VTUNE
GND
RF-
RF+
GND
DIVOUT
VCO-
VCO+
OSCREFINVCC4REFOUTDIV63VCC5CPOUT
VCC3PWRSETLDVASKVCC2OOKINMODIN
DUAL-
CHANNEL
(/62 OR /63)
SYNTHESIZER
GATE
REG
MAX2901/
MAX2903
Functional Diagrams/Pin Configurations
Ordering Information
PARTTEMP RANGEPIN-PACKAGE
MAX2900ETI+
-40°C to +85°C28 QFN-EP*
MAX2901ETI+
-40°C to +85°C28 QFN-EP*
MAX2902ETI+
-40°C to +85°C28 QFN-EP*
MAX2903ETI+
-40°C to +85°C28 QFN-EP*
MAX2904ETI+
-40°C to +85°C28 QFN-EP*
REFEN
RLPF
VCC1
VREG
GND
VTUNE
GND
RF-
RF+
N.C.
N.C.
OSCREFINVCC4REFOUTD2VCC5CPOUT
VCC3PWRSETLDVASKVCC2OOKINMODIN
8-CHANNEL
SYNTHESIZER
GATE
REG
MAX2900
+Denotes a lead(Pb)-free/RoHS-compliant package.
*Exposed pad
MAX2900–MAX2904
200mW Single-Chip Transmitter ICs for
868MHz/915MHz ISM Bands
ABSOLUTE MAXIMUM RATINGS
DC ELECTRICAL CHARACTERISTICS

(VCC= +2.7V to +4.5V, EN = OOKIN = REFEN = high, TA= -40°C to +85°C. Typical values are at VCC= +4.5V, TA= +25°C, unless
otherwise noted.) (Note 1)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
VCCto GND...........................................................-0.3V to +5.0V
Analog/Digital Input Voltage to GND..........-0.3V to (VCC + 0.3V)
Analog/Digital Input Current..............................................±10µA
Continuous Power Dissipation (TA= +70°C)
28-Pin QFN-EP (derate 28.5mW/°C above +70°C)............2W
Operating Temperature Range...........................-40°C to +85°C
Junction Temperature .....................................................+150°C
Storage Temperature Range.............................-65°C to +150°C
Lead Temperature (soldering, 10s).................................+300°C
PARAMETERCONDITIONSMIN-3σTYP+3σMAXUNITS

Supply Voltage2.74.54.5V
VCC = +4.0V0.710Shutdown mode: EN =
REFEN = lowVCC = +4.5V60200µA
Synth mode: OOKIN = low
(MAX2900/MAX2901/MAX2903 only)3240
Transmit mode with output
matching optimized for
+23dBm at +4.5V: PWRSET
loaded with 22kΩ resistor
TA = -40°C
to +85°C150200Supply Current
Transmit mode with output
matching optimized for
+20dBm at +3.0V: PWRSET
loaded with 22kΩ resistor
TA = -40°C
to +85°C110135
Five different versions are available. The versions differ
by their frequency band of operation, and by the synthe-
sizer’s mode of operation. The MAX2900 has an internal
8-channel synthesizer.
The MAX2901 and MAX2903 are dual-channel versions
with a selectable internal synthesizer division ratio of 62
or 63. The MAX2901 operates in the 902MHz to
928MHz ISM band and the MAX2903 operates in the
867MHz to 870MHz European ISM band.
The MAX2902 and MAX2904 require an off-chip fre-
quency synthesizer. The MAX2902 operates in the
902MHz– 928MHz ISM band and MAX2904 operates in
the 867MHz–870MHz European ISM band.
The MAX2901–MAX2904 provide LO outputs to drive a
receiver and/or an external synthesizer.
PARTFREQUENCY RANGE (MHz)SYNTHESIZERLO OUTPUTS

MAX2900ETI+902 to 928Internal 8 selectable channelsNo
MAX2901ETI+902 to 928Internal 2 selectable channelsYes
MAX2902ETI+902 to 928Off-chipYes
MAX2903ETI+867 to 870Internal 2 selectable channelsYes
MAX2904ETI+867 to 870Off-chipYes
Part Selection Information
CAUTION! ESD SENSITIVE DEVICE
MAX2900–MAX2904
200mW Single-Chip Transmitter ICs for
868MHz/915MHz ISM Bands
DC ELECTRICAL CHARACTERISTICS (continued)

(VCC= +2.7V to +4.5V, EN = OOKIN = REFEN = high, TA= -40°C to +85°C. Typical values are at VCC= +4.5V, TA= +25°C, unless
otherwise noted.) (Note 1)
PARAMETERCONDITIONSMIN-3σTYP+3σMAXUNITS

Transmit mode with output
matching optimized for
+17dBm at +3.0V: PWRSET
loaded with 36kΩ resistor
TA = +25°C75
Transmit mode with output
matching optimized for
+14dBm at +3.0V: PWRSET
loaded with 51kΩ resistor
TA = +25°C57
Reference-only mode: EN = low23
Supply Current (continued)
PA standby mode: OOKIN = low
(MAX2902/MAX2904 only)2933
VCO Input Tuning Pin CurrentVTUNE = +4.5V, TA = +25°C0.022µA
VREG VCO Regulator Voltage2.0VIG IT A L IN PU T /O U T PU T S ( P IN S E N , RE FE N , D 0, D 1, D 2, M O D IN , O OKIN , LD )
Input Level HighVCC
- 0.5VV
Input Level Low0.5V
Input Bias Current-1010µA
Output Level HighVCC
- 0.4V
Output Level Low0.4V
Output Current-100100µA
ANALOG CONTROL INPUTS (PINS PWRSET, RLPF, VASK)

PWRSET Voltage1.2V
RLPF Voltage1.2V
VASK Input Impedance100220400kΩ
MAX2900–MAX2904
200mW Single-Chip Transmitter ICs for
868MHz/915MHz ISM Bands
AC ELECTRICAL CHARACTERISTICS

(MAX290_ EV kits. VCC= +2.7V to +4.5V, RRLPF= 68kΩ, RPWRSET= 22kΩ, fRF= 917.28MHz (MAX2900/MAX2901/MAX2902) or fRF
= 868MHz (MAX2903/MAX2904), VASK = VREG, fREF= 14.56MHz (MAX2900/MAX2901/MAX2902) or fREF= 13.62MHz
(MAX2903/MAX2904), chip rate on MODIN = 1.22Mbps, POUT= +23dBm, TA= -40°C to +85°C. Typical values are at VCC= +4.5V,= +25°C, unless otherwise noted.) (Note 1)
PARAMETERCONDITIONSMIN-3σTYP+3σMAXU N I T S
ANALOG INPUT PINS

VTUNE Input CapacitanceVTUNE = +1.35V15p F
DIGITAL INPUT PINS

Digital Input Pin Capacitance3p F
VCO AND SYNTHESIZERS SECTION

(MAX2900/MAX2901/MAX2902)902917.28928RFOUT Frequency Range(MAX2903/MAX2904)867868870M H z
(MAX2900/MAX2901/MAX2902)1414.5615REFIN Reference Frequency
Range(MAX2903/MAX2904)1313.7814.5M H z
REFDIV Fixed Reference Divider
Ratio(MAX2900)444
Table 4 (MAX2900)249256Main Divider Ratios(MAX2901/MAX2903)6263
(MAX2900)3.53.643.75PLL Comparison Frequency(MAX2901/MAX2903)1315M H z
VCO Buffer Output Power300Ω d i ffer enti al l oad ( M AX 2901–M AX 2904) -12d Bm
REFDIV Fixed Reference
Divider Ratio(MAX2901/MAX2903)111
VCO Phase NoiseAt 100kHz offset, measured at RFOUT,
PLL loop BW = 5kHz-101d Bc/H z
(MAX2900/MAX2901/MAX2902)446586VCO Tuning Gain(MAX2903/MAX2904)85M H z/V
5kH z RM S VCO Frequency Pulling with
OOK Modulation
OOKIN clocked at 19kHz, internal (crystal)
or external reference frequency60kH z p eak
PLL Phase NoiseMeasured at RFOUT, 5kHz offset,
PLL loop BW = 50kHz-96d Bc/H z
REFOUT Voltage Swing100m V p - p
CPOUT Charge Pump Current500µA
Reference Spurs-62d Bc
Reference Input Voltage for
Nominal OperationUsing an external frequency reference200300m V
BPSK, OOK MODULATOR, AND PA

MODIN Frequency Range1.28M b /s
Modulation Filter Nominal 3dB
Bandwidth1M H z
Modulation Filter Final AttenuationMeasured at 30MHz2841d B
Carrier Suppression28d B
Noise Power DensityAt 960MHz (measured at RFOUT at-150d Bc/H z
MAX2900–MAX2904
200mW Single-Chip Transmitter ICs for
868MHz/915MHz ISM Bands
AC ELECTRICAL CHARACTERISTICS (continued)

(MAX290_ EV kits. VCC= +2.7V to +4.5V, RRLPF= 68kΩ, RPWRSET= 22kΩ, fRF= 917.28MHz (MAX2900/MAX2901/MAX2902) or fRF
= 868MHz (MAX2903/MAX2904), VASK = VREG, fREF= 14.56MHz (MAX2900/MAX2901/MAX2902) or fREF= 13.62MHz
(MAX2903/MAX2904), chip rate on MODIN = 1.22Mbps, POUT= +23dBm, TA= -40°C to +85°C. Typical values are at VCC= +4.5V,= +25°C, unless otherwise noted.) (Note 1)
PARAMETERCONDITIONSMIN-3σTYP+3σMAXU N I T S

PWRSET = 22kΩ, VCC = +4.5V,
TA = +25°C2123.525
PWRSET = 22kΩ, VCC = +4.5V,
TA = -40°C to +85°C20.525RF Output PowerWRS E T = 22kΩ , V C C = + 3.0V , TA = + 25°C 182021Bm
fRF = 900MHz to 930MHz
(MAX2900/MAX2901/MAX2902)0.3RF Output Power Flatness
fRF = 867MHz to 870MHz0.1B
Adjacent Channel Power RatioPN sequence at 1.22MHz-17d Bc
Alternate Channel Power RatioPN sequence at 1.22MHz-26d Bc
OOK Control Range4080d B
OOKIN = high,
VASK = 041
ASK Output Power Adjustment
Range
ASK output power back-
off relative to max powerOOKIN = high,
VASK = 1V16B
RFOUT Rise and Fall TimeSquare-wave signal applied on OOK1µs
At 2nd harmonic of RF output frequency
with external matching network-50
At 3rd harmonic of RF output frequency
with external matching network-51
At 4th harmonic of RF output frequency
with external matching network-63
Out of 902MHz to 928MHz band other than
harmonics with external matching network
(MAX2900/MAX2901/MAX2902)
< -70
Spurious Emissions
Out of 867MHz to 870MHz band other than
harmonics with external matching network
(MAX2903/MAX2904)
< -70Bc
Unlocked, Out-of-Band Spurious
Output Level
Any condition when synthesizer unlocked
(pin LD low)< -50d Bm
Modulation off, measured at 960MHz, any
gain setting (MAX2900/MAX2901/MAX2902)-126-120
Noise Level Out of Band
Modulation off, measured at 900MHz, any
gain setting (MAX2903/MAX2904)-126-120Bm /H z
Output VSWR for Guaranteed
Stability2:1axi m um Al l ow ab l e Outp ut V S WR2:1
Note 1:
Devices are production tested at TA= +25°C and +85°C. Min/Max values are guaranteed by design and characterization
MAX2900–MAX2904
200mW Single-Chip Transmitter ICs for
868MHz/915MHz ISM Bands
Typical Operating Characteristics

(MAX290_ EV kits. VCC= +4.5V, fRF= 917.28MHz (MAX2900/MAX2901/MAX2902) or fRF= 868MHz (MAX2903/MAX2904), RRLPF=
68kΩ, RPWRSET= 22kΩ,VASK = VREG, fREF= 14.56MHz (MAX2900/MAX2901/MAX2902) or fREF= 13.78MHz (MAX2903/MAX2904),
chip rate on MODIN = 1.22 Mbps, RFoutput matching network optimized for +23dBm, VCC= 4.5V, TA= +25°C, unless
otherwise noted.)
SUPPLY CURRENT vs. VCC

MAX2900 toc01
VCC (V)
SUPPLY CURRENT (mA)
TA = +85°C
TA = +25°C
TA = -40°C
SHUTDOWN CURRENT vs. VCC

MAX2900 toc02
VCC (V)
SHUTDOWN CURRENT (
TA = +85°C
TA = +25°CTA = -40°C
OUTPUT POWER vs. VCC

MAX2900 toc03
VCC (V)
OUTPUT POWER (dBm)
TA = +85°C
TA = +25°C
TA = -40°C
VCO PHASE NOISE AT 917.28MHz

MAX2900 toc04
-40dBc/Hz
-140dBc/Hz
FREQUENCY OFFSET (MHz)
VCO SUPPLY PUSHING vs. VCC

MAX2900 toc05
VCC (V)
OUTPUT FREQUENCY (MHz)
PLL LOCK TIME
MAX2900 toc06
100kHz
-100kHz
START 0s
20kHz/div
STOP 30μs
LOWPASS FILTER 3-dB RESPONSE
vs. RRLPF

MAX2900 toc07
RRLPF (kΩ)
LOWPASS FILTER 3-dB BANDWIDTH (kHz)50403020
BPSK MODULATION OUTPUT vs. TIME
MAX2900 toc08
225deg
-225deg
45deg/div
START 0sSTOP 40μs
RF POWER vs. FREQUENCY
(MAX2900/MAX2901/MAX2902)

MAX2900 toc09
RF POWER (dBm)
A: VCC = 4.5V, TA = -40°C
B: VCC = 4.5V, TA = +25°C
C: VCC = 4.5V, TA = +85°C
D: VCC = 2.7V, TA = -40°C
E: VCC = 2.7V, TA = +25°C
F: VCC = 2.7V, TA = +85°C
MAX2900–MAX2904
200mW Single-Chip Transmitter ICs for
868MHz/915MHz ISM Bandsypical Operating Characteristics (continued)

(MAX290_ EV kits. VCC= +4.5V, fRF= 917.28MHz (MAX2900/MAX2901/MAX2902) or fRF= 868MHz (MAX2903/MAX2904), RRLPF=
68kΩ, RPWRSET= 22kΩ,VASK = VREG, fREF= 14.56MHz (MAX2900/MAX2901/MAX2902) or fREF= 13.78MHz (MAX2903/MAX2904),
chip rate on MODIN = 1.22 Mbps, RFoutput matching network optimized for +23dBm, VCC= 4.5V, TA= +25°C, unless
otherwise noted.)
RF POWER vs. FREQUENCY
(MAX2903/MAX2904)

MAX2900 toc10
FREQUENCY (MHz)
RF POWER (dBm)
VCC = +3.6V
VCC = +3.0V
VCC = +2.7V
RF OUTPUT MATCHING
OPTIMIZED FOR +14dBm
OUTPUT AT VCC = +3.0V
OUTPUT SPECTRUM WITH 600kHz
SQUARE WAVE INPUT AT MODIN

MAX2900 toc11
30dBm
-70dBm
10dB/div
MKR
917.31MHz
-16.33dBm
CENTER 917.28MHzSPAN 20MHz
OUTPUT SPECTRUM WITH PN SEQUENCE
AT 1.22MHz AT MODIN

MAX2900 toc12
30dBm
-70dBm
10dB/div
MKR
917.35MHz
8.17dBm
CENTER 917.28MHzSPAN 20MHz
RF OUT RISE AND FALL TIME TRANSIENT
WITH SQUARE OOK

MAX2900 toc13
0dBVp-p
-100dBVp-p
10dB/divTf
START 46μsSTOP 86μs
RF OUT RISE AND FALL TIME TRANSIENT
WITH SQUARE ASK

MAX2900 toc14
22dBVp-p
-78dBVp-p
10dB/divTf
START 45μsSTOP 85μs
SPURIOUS LEVEL FROM
DC TO 7TH HARMONIC

MAX2900 toc15
MKR
910MHz
23.17dBm
30dBm
-70dBm
10dB/div
START 0HzSTOP 7GHz
SPURIOUS LEVEL BETWEEN ±50MHz
FROM CARRIER FREQUENCY

MAX2900 toc16
30dBm
-70dBm
10dB/div
CENTER 917.28MHzSPAN 100MHz
TRANSMITTER EFFICIENCY vs. RPWRSET

MAX2900 toc17
TRANSMITTER EFFICIENCY (%)3430262218BC
A: VCC = 4.5V, TA = -40°C
B: VCC = 4.5V, TA = +25°C
C: VCC = 4.5V, TA = +85°C
D: VCC = 2.7V, TA = -40°C
E: VCC = 2.7V, TA = +25°C
F: VCC = 2.7V, TA = +85°C
MAX2900–MAX2904
200mW Single-Chip Transmitter ICs for
868MHz/915MHz ISM Bands
Pin Description
PIN
MAX2900MAX2901
MAX2903
MAX2902
MAX2904
NAMEPIN TYPEFUNCTION
11VTUNEAnalog InputVCO tuning voltage input22GNDSupply PinGround33VREGAnalog
Input/Output
Regulated voltage output to supply the VCO.
Bypass with a 0.01µF capacitor to GND as
close to the part as possible.44VCC1Supply Pin
Power supply pin for VCO circuits. Bypass
with a 1000pF and a 10µF capacitor to GND
as close to the part as possible.55RLPFAnalog Input
Resistor to Ground
Resistor to ground on this pin sets the
modulation filter bandwidth.66ENDigital InputChip-enable digital input pin. Set EN low
maintain the chip in power-down mode.77REFENDigital InputEnable for crystal oscillator and frequency
reference buffer.88MODINDigital InputBPSK modulation input99OOKINDigital InputOn-off keying modulation. On state = high.1010VCC2Supply
Power supply pin for internal RF buffer
circuits. Bypass with a 100pF and a 0.01µF
capacitor to GND as close to the part as
possible.1111VASKAnalog Voltage
InputASK voltage input pin12—LDDigital OutputLock detector output digital pin. Level is
high when PLL is inside lock range.—12D.C.Do NOT Connect—1313PWRSETAnal og Inp ut
Resi stor to Gr ound Current input set to adjust output power.1414VCC3Supplyow er sup p l y p i n for RF p ow er am p l i fi er
ci r cui ts. Byp ass w i th a 100p F cap aci tor to GN D
as cl ose to the p ar t as p ossi b l e.
MAX2900–MAX2904
200mW Single-Chip Transmitter ICs for
868MHz/915MHz ISM Bands
Pin Description (continued)
PIN
MAX2900MAX2901
MAX2903
MAX2902
MAX2904
NAMEPIN TYPEFUNCTION
1515GNDSupply PinGround
16, 1716, 1716, 17RF-, RF+RF OutputRF d i ffer enti al outp ut, op en- col l ector typ e——N.C.Not Connected—18—GNDSupply PinGround—18D.C.Do Not Connect——19N.C.Not Connected—19—DIVOUTECL OutputDivider output20, 2120, 21VCO-, VCO+Open CollectorVCO output (differential)——D1Digital InputChannel selection bit 1——D0Digital InputChannel selection bit 02222OSCAnalog InputCrystal oscillator connection. See Typical
Operating Circuit.2323REFINAnalog Voltage
Input
Refer ence i np ut p i n anal og ( can b e used asnp ut or as cr ystal osci l l ator d r i ver ) . See
Typical Operating Circuit.24—VCC4Supply Pin
Power-supply pin for the synthesizer circuits.
Bypass with a 1000pF capacitor to GND as
close to the part as possible.—24VCC4Supply Pin
Power-supply pin for the digital circuits.
Bypass with a 100pF capacitor to GND as
close to the part as possible.2525REFOUTAnalog OutputBuffered clock analog output pin——D2Digital InputChannel selection bit 226—DIV63Digital Input
Division ratio selections (division ratio = 62
when DIV63 = high; division
ratio = 63 when DIV63 = low).—26N.C.Not Connected—27—VCC5Supply Pin
Power-supply pin for charge pump circuits.
Bypass with a 100pF capacitor to GND as
close to the part as possible.—27VCC5Supply Pin
Power-supply pin. Bypass with a 100pF
capacitor to GND as close to the part as
possible.28—CPOUTAnalog OutputCharge pump output pin—28D.C.Do Not Connect—
GROUNDGROUNDGROUNDGROUNDElectrical
Ground
Back side of package is connected to
ground.
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