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MAX2667EWT+T
GPS/GNSS Ultra-Low-Noise-Figure LNAs
GPS/GNSS Ultra-Low-Noise-Figure LNAs
MAX2667/MAX2669
EVALUATION KIT AVAILABLE Typical Application Circuit
General Description
The MAX2667/MAX2669 high-gain, low-noise amplifiers
(LNAs) are designed for GPS L1, Galileo, and GLONASS
applications. Designed in Maxim’s advanced SiGe pro-
cess, the devices achieve a high gain and our lowest
noise figure, while maximizing the input-referred 1dB
compression point and the 3rd-order intercept point.
The devices operate from a +1.6V to +3.3V single sup-
ply. The MAX2667 is optimized for low current. The
MAX2669 is optimized for high linearity. The shutdown
feature in the device reduces the supply current to be
less than 10µA. The devices are available in a very small,
lead-free, RoHS-compliant, 0.86mm x 1.26mm x 0.65mm
wafer-level package (WLP).
Applications
Automotive Navigation
Location-Enabled Mobile Devices
Telematics (Asset Tracking and Management)
Personal Navigation Devices (PNDs)
Cellular Phones with GPS
Notebook PCs/Ultra-Mobile PCs
Recreational, Marine Navigation
Avionics
Watches
Features
S 19dB High-Power Gain (MAX2667)
S Ultra-Low Noise Figure: 0.65dB
S Integrated 50Ω Output Matching Circuit
S Low 4.1mA Supply Current (MAX2667)
S Wide 1.6V to 3.3V Supply Voltage Range
S Low Bill of Materials: Two Inductors, Three
Capacitors, and One Resistor
S Small Footprint: 0.86mm x 1.26mm
S Thin Profile: 0.65mm
S 0.4mm-Pitch Wafer-Level Package (WLP)
Ordering Information
+Denotes a lead(Pb)-free/RoHS-compliant package.
T = Tape and reel.RFIN
RFOUT
VCC
SHDN
RF OUTPUT
GNDDC
RF INPUT
BIAS
L1 = 6.2nH (MAX2667)
C1 = 100nF (MAX2667)
C2 = 39pF
L2 = 100nH
C3 = 39pF
L1 = 3.3nH (MAX2669)
C1 = 100nF (MAX2669)
VCC
BIASGNDACC1
MAX2667
MAX2669
25kΩ
PARTTEMP RANGEPIN-PACKAGE
MAX2667EWT+T-40°C to +85°C6 WLP
MAX2669EWT+T-40°C to +85°C6 WLP
GPS/GNSS Ultra-Low-Noise-Figure LNAs
MAX2667/MAX2669
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
VCC to GND_ ........................................................-0.3V to +3.6V
RFOUT and BIAS to GND_ .....-0.3V to (Operating VCC + 0.3V)
Maximum RF Input Power ...............................................+5dBm
Continuous Power Dissipation (TA = +70°C)
WLP (derates 10.5mW/°C above +70°C) ....................840mW
Maximum Current into RF Input .........................................10mA
Operating Temperature Range ..........................-40°C to +85°C
Junction Temperature .....................................................+150°C
Storage Temperature Range ............................-65°C to +160°C
Soldering Temperature (reflow) (Note 1) ........................+260°C
DC ELECTRICAL CHARACTERISTICS
(MAX2667/MAX2669 EV kit. VCC = 1.6V to 3.3V, no RF signals are applied, TA = -40°C to +85°C. Typical values are at VCC = 2.85V
and TA = +25°C, unless otherwise noted.) (Note 2)
AC ELECTRICAL CHARACTERISTICS
(MAX2667/MAX2669 EV kit. VCC = 1.6V to 3.3V, fRFIN = 1575.42MHz, TA = -40°C to +85°C. Typical values are at VCC = 2.85V and
TA = +25°C, unless otherwise noted.) (Note 2)
ABSOLUTE MAXIMUM RATINGS
Note 1: Refer to Application Note 1891: Wafer-level packaging (WLP) and its applications.Junction-to-Ambient Thermal Resistance (qJA) ..........95°C/W
Note 2: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-lay-
er board. For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial.
PACKAGE THERMAL CHARACTERISTICS(Note 2)
CAUTION! ESD SENSITIVE DEVICEPARAMETERCONDITIONSMINTYPMAXUNITS
Supply Voltage1.62.853.3V
Supply CurrentSHDN = highMAX26674.1mAMAX26697.7
Shutdown mode, SHDN = low10FA
Digital Input Logic-HighTA = +25°C1.2V
Digital Input Logic-LowTA = +25°C0.45V
PARAMETERCONDITIONSMINTYPMAXUNITS
RF FrequencyL1 band1575.42MHz
Power Gain
VCC = 2.85VMAX266715.019.5MAX266914.617.7
VCC = 1.6VMAX266714.819.4
MAX266914.317.6
Noise FigureVCC = 1.8V0.65dBVCC = 3.3V0.65
GPS/GNSS Ultra-Low-Noise-Figure LNAs
MAX2667/MAX2669
AC ELECTRICAL CHARACTERISTICS (continued)
(MAX2667/MAX2669 EV kit. VCC = 1.6V to 3.3V, fRFIN = 1575.42MHz, TA = -40°C to +85°C. Typical values are at VCC = 2.85V and
TA = +25°C, unless otherwise noted.) (Note 2)
Note 2: Min and max limits guaranteed by test at TA = +25°C and guaranteed by design and characterization at TA = -40°C and
TA = +85°C.
Note 3: Measured with the two tones located at 1MHz and 2MHz offset from the center of the GPS band with -30dBm/tone for
MAX2667 and -27dBm/tone for MAX2669.
Note 4: Measured with input tones at 1713MHz (-25dBm) and 1851MHz (-49dBm).
Note 5: Measured with a tone located at 5MHz offset from the center of the GPS band.
PARAMETERCONDITIONSMINTYPMAXUNITS
In-Band 3rd-Order Input
Intercept Point(Note 3)MAX2667-3.5dBmMAX2669+4.5
Out-of-Band 3rd-Order Input
Intercept Point(Note 4)MAX2667+2.5dBmMAX2669+8
Input 1dB Compression Point(Note 5)MAX2667-12.5dBmMAX2669-10
Input Return Loss10dB
Output Return Loss15dB
Reverse Isolation30dB
GPS/GNSS Ultra-Low-Noise-Figure LNAs
MAX2667/MAX2669
Typical Operating Characteristics
(MAX2667/MAX2669 EV kit. Typical values are at VCC = 2.85V, fRFIN = 1575.42MHz, TA = +25°C, unless otherwise noted.)
INPUT RETURN LOSS vs. FREQUENCY
MAX2667 toc01
FREQUENCY (MHz)
|S11| (dB)
MAX2669
MAX2667
GAIN vs. FREQUENCY
MAX2667 toc02
FREQUENCY (MHz)
GAIN (dB)
MAX2669
MAX2667
REVERSE ISOLATION vs. FREQUENCY
MAX2667 toc03
FREQUENCY (MHz)
|S12| (dB)
MAX2669
MAX2667
OUTPUT RETURN LOSS vs. FREQUENCY
MAX2667 toc04
FREQUENCY (MHz)
|S22| (dB)
MAX2669
MAX2667
MAX2667 IN-BAND IIP3 vs.
SUPPLY VOLTAGE AND TEMPERATURE
(TWO TONES LOCATED AT 1MHz AND
2MHz OFFSET WITH -35dBm/TONE)
MAX2667 toc05
SUPPLY VOLTAGE (V)
IIP3 (dBm)
-40NC
+85NC
+25NC
MAX2669 IN-BAND IIP3 vs.
SUPPLY VOLTAGE AND TEMPERATURE
(TWO TONES LOCATED AT 1MHz AND
2MHz OFFSET WITH -30dBm/TONE)
MAX2667 toc06
SUPPLY VOLTAGE (V)
IIP3 (dBm)
-40NC
+85NC
+25NC
3.2
GPS/GNSS Ultra-Low-Noise-Figure LNAs
MAX2667/MAX2669
Typical Operating Characteristics (continued)
(MAX2667/MAX2669 EV kit. Typical values are at VCC = 2.85V, fRFIN = 1575.42MHz, TA = +25°C, unless otherwise noted.)
MAX2669 INPUT P1dB COMPRESSION vs.
SUPPLY VOLTAGE AND TEMPERATURE
MAX2667 toc10
SUPPLY VOLTAGE (V)
INPUT P1dB (dBm)
-40NC
+85NC
+25NC
SUPPLY VOLTAGE (V)
MAX2667 toc09
MAX2667 INPUT P1dB COMPRESSION
vs. SUPPLY VOLTAGE AND TEMPERATURE
INPUT P1dB (dBm)
-40NC
+85NC
+25NC
IIP3 (dBm)
SUPPLY VOLTAGE (V)
MAX2669 OUT-OF-BAND IIP3 vs.
SUPPLY VOLTAGE AND TEMPERATURE
(TONE 1 AT 1713MHz, -25dBm;
TONE 2 AT 1851MHz, -49dBm)
MAX2667 toc08
-40NC
+85NC
+25NC
MAX2667 OUT-OF-BAND IIP3 vs.
SUPPLY VOLTAGE AND TEMPERATURE
(TONE 1 AT 1713MHz, -25dBm;
TONE 2 AT 1851MHz, -49dBm)
MAX2667 toc07
SUPPLY VOLTAGE (V)
IIP3 (dBm)
-40NC
+85NC+25NC
3.2
GPS/GNSS Ultra-Low-Noise-Figure LNAs
MAX2667/MAX2669
Bump Description
Bump Configuration
Detailed Description
The MAX2667/MAX2669 are LNAs designed for GPS
L1, Galileo, and GLONASS applications. The devices
feature a power-shutdown control mode to eliminate the
need for an external supply switch. The devices achieve
a high gain and an ultra-low noise figure.
Input and Output Matching
The devices require an off-chip input matching. Only
needed to form the input matching circuit. The Typical
Application Circuit shows the recommended input-
matching network. These values are optimized for the
best simultaneous gain, noise figure, and return loss
performance. Tables 1 and 2 list typical device S param-
eters and Kf values. The devices integrate an on-chip
output matching to 50Ω at the output, eliminating the
need for external matching components. The value of the
input coupling capacitor affects IIP3. A smaller coupling
capacitor results in lower IIP3.
WLPTOP VIEW
BUMP SIDE DOWN
BIASRFOUT/
SHDN
RFINVCC
GNDACGNDDC
MAX2667/MAX2669
BUMPNAMEFUNCTIONBIASProvides Bias for LNA Input. Connect to B1 (RFIN) through a high-value inductor (100nH),
and bypass to ground close to the pin.RFOUT/SHDN
RF Output and SHDN Logic Input. RFOUT is internally matched to 50I and has an internal
DC-blocking capacitor. The SHDN logic requires an external 25kΩ resistor to the logic
control.RFINRF Input. Connect to A1 through bias choke, and connect matching network and
DC-blocking capacitor.VCCSupply Voltage. Bypass to ground with a capacitor close to the IC.GNDACGround of the RF Path. Connect to the 2nd-layer PCB ground plane with a via next to the
pin pad.GNDDCGround of Bias Circuit. Connect to the 2nd-layer PCB ground plane with a separate via
from pin C1. Sharing a ground via with pin C1 might cause stability problems.
