MAX2430ISE ,Low-Voltage / Silicon RF Power Amplifier/Predriverapplications. It is designed for use in the 800MHz to1000MHz frequency range and, at 915MHz, can pr ..
MAX243CPE ,+5V-Powered, Multichannel RS-232 Drivers/ReceiversFeaturesMAX220 +5 2/2 4 4.7/10 No — 120 Ultra-low-power, industry-standard pinoutMAX222 +5 2/2 4 0. ..
MAX243CSE ,+5V-Powered, Multichannel RS-232 Drivers/Receiversapplications where ±12V is(+5V and +12V—MAX231/MAX239)not available. Low-Power Receive Mode in Sh ..
MAX243CSE+ ,+5V-Powered, Multichannel RS-232 Drivers/ReceiversApplications• Interface Translation• Multidrop RS-232 Networks• Portable Diagnostics EquipmentAutoS ..
MAX243CWE ,+5V-Powered, Multichannel RS-232 Drivers/ReceiversFeaturesMAX220 +5 2/2 4 4.7/10 No — 120 Ultra-low-power, industry-standard pinoutMAX222 +5 2/2 4 0. ..
MAX243EPE ,+5V-Powered, Multichannel RS-232 Drivers/ReceiversFeaturesThe MAX220–MAX249 family of line drivers/receivers isSuperior to Bipolarintended for all EI ..
MAX5853ETL ,2.7 V to 3.6 V, Dual, 10-bit, 80 Msps, current-output DACApplications3 28DA7/IDE CLKCommunicationsDA6/REN 4 27 CVDDSatCom, LMDS, MMDS, HFC, DSL, WLAN,DA5/G3 ..
MAX5854ETL+T ,Dual, 10-Bit, 165Msps, Current-Output DACElectrical Characteristics(AV = DV = CV = 3V, AGND = DGND = CGND = 0, f = 165Msps, differential clo ..
MAX5877EGK+D ,14-Bit, 250Msps, High-Dynamic-Performance, Dual DAC with LVDS InputsApplicationsBase Stations: Single/Multicarrier UMTS, CDMA, GSM68 67 66 65 64 63 62 61 60 59 58 57 5 ..
MAX5878EGK+ ,16-Bit, 250Msps, High-Dynamic-Performance, Dual DAC with LVDS InputsApplicationsBase Stations: Single/Multicarrier UMTS, CDMA, GSM68 67 66 65 64 63 62 61 60 59 58 57 5 ..
MAX5883EGM ,3.3V, 12-Bit, 200Msps High Dynamic Performance DAC with CMOS InputsApplications1 36N.C. B8Base Stations: Single/Multicarrier UMTS, 2 35 B9N.C.CDMAXOR 3 34 B104 33Comm ..
MAX5883EGM+D ,3.3V, 12-Bit, 200Msps High Dynamic Performance DAC with CMOS InputsApplications1 36N.C. B8Base Stations: Single/Multicarrier UMTS, 2 35 B9N.C.CDMAXOR 3 34 B104 33Comm ..
MAX2430IEE-MAX2430ISE
Low-Voltage / Silicon RF Power Amplifier/Predriver
________________General DescriptionThe MAX2430 is a versatile, silicon RF power amplifier
that operates directly from a 3V to 5.5V supply, making
it suitable for 3-cell NiCd or 1-cell lithium-ion battery
applications. It is designed for use in the 800MHz to
1000MHz frequency range and, at 915MHz, can pro-
duce +21dBm (125mW) of output power with greater
than 32dB of gain at VCC= 3.6V.
A unique shutdown function provides an off supply cur-
rent of typically less than 1µA to save power during
“idle slots” in time-division multiple-access (TDMA)
transmissions. An external capacitor sets the RF output
power envelope ramp time. External power control is
also possible over a 15dB range. The amplifier’s input
is matched on-chip to 50Ω. The output is an open col-
lector that is easily matched to a 50Ωload with few
external components.
The MAX2430 is ideal as a driver amplifier for portable
and mobile telephone systems, or as a complete power
amplifier for other low-cost applications, such as those
in the 915MHz spread-spectrum ISM band. It is fabri-
cated with Maxim’s high-frequency bipolar transistor
process and is available in a thermally enhanced,
16-pin narrow SO and miniature 16-pin PwrQSOP pack-
ages with heat slug.
________________________ApplicationsDigital Cordless Phones
915MHz ISM-Band Applications
Two-Way Pagers
Wireless LANs
Cellular Phones
AM and FM Analog Transmitters
____________________________FeaturesOperates Over the 800MHz to 1000MHz Frequency
RangeDelivers 125mW at 915MHz from +3.6V Supply
(100mW typical from +3.0V supply)Operates Directly from 3-Cell NiCd or 1-Cell
Lithium-Ion BatteryOver 32dB Power GainRF Power Envelope Ramping is Programmable
with One External CapacitorInput Matched to 50Ω(VSWR < 2:1)15dB Output Power Control Range1µA Typical Shutdown Current
MAX2430
Low-Voltage, Silicon RF Power
Amplifier/Predriver
Pin Configuration
Functional Diagram
MAX2430
Low-Voltage, Silicon RF Power
Amplifier/Predriver
ABSOLUTE MAXIMUM RATINGS
DC ELECTRICAL CHARACTERISTICS(VCC= VCC1 = VCC2 = RFOUT = 3V to 5.5V, GND1 = GND2 = GND3 = GND4 = 0V, SHDN= 2.2V, BIAS = open, RFIN = open,= -20°C to +85°C, unless otherwise noted.)
AC ELECTRICAL CHARACTERISTICS(MAX2430 EV kit, f = 915MHz, VCC= 3.6V, SHDN= VCC, RFOUT matched to 50Ωresistive load, output measurements taken after
matching network, TA= +25°C, unless otherwise noted.) (Note 1)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
VCC1, VCC2..........................................................................+6VSHDN, BIAS...................................................-0.3V, (VCC+ 0.3V)
RFIN.............................................................................-0.3V, +2V
PRFIN..................................................................................-3dBm
Continuous Power Dissipation (TA= +70°C)
PwrQSOP (derate 20mW/°C above +70°C)......................1.6W
Narrow SO (derate 20mW/°C above +70°C)....................1.6W
Operating Temperature Range...........................-20°C to +85°C
Storage Temperature Range.............................-65°C to +160°C
Lead Temperature (soldering, 10sec).............................+300°C
MAX2430
Low-Voltage, Silicon RF Power
Amplifier/Predriver
__________________________________________Typical Operating Characteristics(MAX2430EVKIT-SO, f = 915MHz, VCC= 3.6V, SHDN= VCC, output matched to 50Ωresistive load, output measurements taken after
matching network, TA= +25°C, unless otherwise noted.)
Note 1:Minimum and maximum parameters are guaranteed by design.
Note 2:For optimum performance at a given frequency, output matching network must be designed for maximum output power.
See Applications Informationsection. Operation outside this frequency range is possible but has not been characterized.
Note 3:No damage to the device.
Note 4:All non-harmonically related outputs are more than 60dB below the desired signal for any electrical phase.
AC ELECTRICAL CHARACTERISTICS (continued)(MAX2430 EV kit, f = 915MHz, VCC= 3.6V, SHDN= VCC, output matched to 50Ωresistive load, output measurements taken after
matching network, TA= +25°C, unless otherwise noted.) (Note 1)
MAX2430
Low-Voltage, Silicon RF Power
Amplifier/Predriver
_____________________________Typical Operating Characteristics (continued)(MAX2430EVKIT-SO, f = 915MHz, VCC= 3.6V, SHDN= VCC, output matched to 50Ωresistive load, output measurements taken after
matching network, TA= +25°C, unless otherwise noted.)
MAX2430
Low-Voltage, Silicon RF Power
Amplifier/Predriver
Detailed DescriptionThe MAX2430 consists of a large power output transis-
tor driven by a capacitively coupled driver stage (see
Functional Diagram). The driver and front-end gain
stages are DC-connected and biased on-chip from the
master bias cell. The master bias cell also controls the
output stage bias circuit. The input impedance at the
RFIN pin is internally matched to 50Ω, while the output
stage must be tuned and filtered externally for any nar-
row-band frequency range of interest between 800MHz
and 1000MHz.
The driver amplifier requires an external inductor at the
VCC2 pin to provide DC bias and proper matching to
the output stage. This inductor’s value depends on the
package type and frequency range of operation; typi-
cally it will vary between 5nH and 22nH.
The output transistor at the RFOUT pin requires an
external RF choke inductor connected to the supply for
DC bias, and a matching network to transform the
desired external load impedance to the optimal internal
load impedance of approximately 15Ω.
The MAX2430 includes a unique shutdown feature. The
TTL/CMOS-compatible SHDNinput allows the device to
be shut down completely without the use of any exter-
nal components. Also, the RFoutput power envelope
ramp time can be programmed with a single external
capacitor connected between the BIAS pin and
ground. Pulling the shutdown pin (SHDN) high powers
on the master bias circuit, which in turn charges the
external capacitor tied to the BIAS pin using a con-
trolled current. The voltage at BIAS controls the output
power level, which ramps until the BIAS pin is internally
clamped to approximately 2.2V. The envelope ramp-
down time is controlled in a similar manner when theSHDNpin is pulled low.
Variable output power control over a 15dB range is also
possible by forcing the voltage on the BIAS pin exter-
nally from 0.6V to 2.4V.
During the on state (SHDN= high), the power-supply
bias current is typically 52mA with no RF applied to the
input. During the off state (SHDN= low), the supply
current is typically reduced to less than 1µA.
Note:MAX2430IEE (PwrQSOP package) underside metal slug
must be soldered to PCB ground plane.
MAX2430
Low-Voltage, Silicon RF Power
Amplifier/Predriver
__________Applications Information
Output MatchingThe optimum internal load impedance seen by RFOUT
is approximately 15Ω. This on-chip low drive imped-
ance provides maximum power transfer and best effi-
ciency under low (3V) supply conditions where the
voltage-swing headroom is limited. For example, driv-
ing an output power of 21.3dBm (135mW) into 50Ω
translates to a 7.35Vp-p swing at the output. An RF
amplifier would require at least a 4.5V supply to drive a
50Ωload directly. However, driving 21.3dBm into 15Ω
translates to 4.02Vp-p. The MAX2430 can achieve a
voltage swing of 4.02Vp-p or 2.01Vp from a 3V supply
voltage without saturating the output transistor.
Figure 1 shows the MAX2430 configured for 800MHz to
1000MHz operation. The output matching circuitry con-
verts the desired 50Ωload impedance to the 15Ωopti-
mal load seen by the output transistor’s collector. This
configuration uses a low-loss, controlled-Q inductor net-
work. Starting from the RFOUT pin, this network consists
of a series L (which includes the 5nH package parasitic
inductance), series C, and shunt C. The design equa-
tions for this network are as follows:
R1 = Output resistance as seen by the
collector ~15Ω= Desired load resistance
The controlled-Q inductor network requires that > R1 and Q > . Choose Q and com-
pute matching components as given below:
where wequals the center frequency in radians/second.
Recommended starting values for L1 and L2 are given
in Table 1.
Figure 1. Typical Application Circuit
Table 1. Recommended L1 and L2 Starting
Values
