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MAX2150ETIMAXINN/a49avaiWideband I/Q Modulator with Sigma-Delta Fractional-N Synthesizer


MAX2150ETI ,Wideband I/Q Modulator with Sigma-Delta Fractional-N SynthesizerApplications*EP = exposed pad.Wireless BroadbandSatellite UplinkPin Configuration/LMDS Functional D ..
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MAX2150ETI+T ,Wideband I/Q Modulator with Sigma-Delta Fractional-N SynthesizerELECTRICAL CHARACTERISTICS(MAX2150 EV kit. V = +2.7V to +3.6V, GND = 0V, SHDN = PLLEN = TXEN = high ..
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MAX526DEWG+ ,Calibrated, Quad, Voltage-Output, 12-Bit DACELECTRICAL CHARACTERISTICS - MAX526 (VDD = +15V, Vss = -5V, VREF = 10V, AGND = DGND = OV, TA = TNN ..


MAX2150ETI
Wideband I/Q Modulator with Sigma-Delta Fractional-N Synthesizer
General Description
The MAX2150 is a complete wideband direct upconver-
sion quadrature modulator IC incorporating a 28-bit
sigma-delta fractional-N synthesizer. The device is tar-
geted for applications in the 700MHz to 2300MHz fre-
quency range.
The super-high-resolution sigma-delta fractional-N syn-
thesizer is capable of better than 50mHz resolution
when used with a 10MHz reference. Other features:
fully differential I/Q modulation inputs, an internal LO
buffer, and a 50Ωwideband output driver amplifier.
A standard 3-wire interface is provided for synthesizer
programming and overall device configuration. An on-
chip low-noise crystal oscillator amplifier is also includ-
ed and can be configured as a buffer when an external
reference oscillator is used.
The device typically achieves 34dBc of carrier and side-
band suppression at a -1dBm output level. The wide-
band, internally matched RF output can also
be disabled while the synthesizer and 3-wire bus remain
powered up for continuous programming.
The device consumes 72mA from a single +3.0V sup-
ply and is packaged in an ultra-compact 28-pin QFN
package (5mm ✕5mm) with an exposed pad.
Applications

Wireless Broadband
Satellite Uplink
LMDS
Wireless Base Station
Features
Single Voltage Supply (2.7V to 3.6V)75MHz 3dB I/Q Input BandwidthWideband 50ΩRF Output: 700MHz to 2300MHz Ultra-Fine Frequency Resolution: 100mHzHigh Reference Frequency for Fast-Switching
Applications
Ultra-Low Phase NoiseLow Spurious and Reference Emissions-1dBm RMS Output Power 60dB RF Muting Control34dBc Typical Carrier Suppression34dBc Typical Sideband SuppressionSoftware- and Hardware-Controlled Shutdown
Modes
MAX2150
Wideband I/Q Modulator with Sigma-Delta
Fractional-N Synthesizer
Pin Configuration/
Functional Diagram
Ordering Information

19-2389; Rev 1; 8/03
*EP = exposed pad.
MAX2150
Wideband I/Q Modulator with Sigma-Delta
Fractional-N Synthesizer
ABSOLUTE MAXIMUM RATINGS

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
VCCto GND...........................................................-0.3V to +6.0V
RF Signals: LO+, LO-, OSCIN........................................+10dBm
I+ to I-, Q+ to Q-.......................................................................2V
LO+, LO-, I+, I-, Q+, Q-, BUFEN, TXEN, CLK, DATA,
EN, SYNEN, OSCIN, OSCOUT, BUFOUT, CHP,
SHDN,LOCK, VCC_CP to GND..............-0.3V to (VCC + 0.3V)
Digital Input Current.........................................................±10mA
Short-Circuit Duration RFOUT, BUFOUT, OSCOUT,
Lock, CHP...........................................................................10s
Continuous Power Dissipation
28-Pin QFN (TA = +70°C)....................................................2W
(derate 28.5mW/°C above +70°C)
Operating Temperature Range...........................-40°C to +85°C
Junction Temperature Range..........................................+150°C
Storage Temperature.........................................-65°C to +150°C
Lead Temperature (soldering 10s)..................................+300°C
DC ELECTRICAL CHARACTERISTICS

(MAX2150 EV kit. VCC= +2.7V to +3.6V, GND = 0V, SHDN= PLLEN = TXEN = high, BUFEN= low. No AC input signals. RFOUT and
BUFOUT output ports are terminated in 50Ω. TA= -40°C to +85°C. Typical values are at VCC= +3V, TA= +25°C, unless otherwise
MAX2150
Wideband I/Q Modulator with Sigma-Delta
Fractional-N Synthesizer
AC ELECTRICAL CHARACTERISTICS

(MAX2150 EV kit. VCC= +2.7V to +3.6V, SHDN= PLLEN = TXEN = high, BUFEN =low. Input I/Q signals: FI/Q = 500kHz, VI/Q = 1VP-P.
I+, Q+ single-ended input, driven from AC-coupled source. I-, Q- single-ended inputs are AC-coupled to GND. RFOUT and BUFOUT
output ports are terminated in 50Ωloads. fLO=1750MHz, PLO= -10dBm, typical values are at VCC= +3V, TA= +25°C, unless other-
wise noted.) (Note 1)
MAX2150
Wideband I/Q Modulator with Sigma-Delta
Fractional-N Synthesizer
AC ELECTRICAL CHARACTERISTICS (continued)

(MAX2150 EV kit. VCC= +2.7V to +3.6V, SHDN= PLLEN = TXEN = high, BUFEN = low. Input I/Q signals: FI/Q = 500kHz, VI/Q = 1VP-P.
I+, Q+ single-ended input, driven from AC-coupled source. I-, Q- single-ended inputs are AC-coupled to GND. RFOUT and BUFOUT
output ports are terminated in 50Ωloads. fLO=1750MHz, PLO= -10dBm, typical values are at VCC= +3V, TA= +25°C, unless other-
wise noted.) (Note 1)
Note 1:
Parameters are guaranteed by production testing at +25°C and +85°C. Minimum and maximum values over the tempera-
ture and supply voltage range are guaranteed by design and characterization.
Note 2:
Guaranteed by design and characterization.
Note 3:
Measured with MAX2150 EV kit.
Note 4:
Measured with an on-chip crystal oscillator.
Note 5:
In-loop spurious emissions occur when synthesizing a frequency at an integer multiple of the comparison frequency with
fractional offset within the PLL loop BW.
Note 6:
If an on-chip oscillator is used, a fundamental tone crystal is needed.
Note 7:
Minimum and maximum values at CPX = 1 are guaranteed by production testing. Values at CPX = 0 are guaranteed by
design and characterization.
MAX2150
Wideband I/Q Modulator with Sigma-Delta
Fractional-N Synthesizer
SUPPLY CURRENT
vs. SUPPLY VOLTAGE

MAX2150 toc01
SUPPLY VOLTAGE (V)
SUPPLY CURRENT (mA)
MODULATION OUTPUT POWER
vs. FREQUENCY
MAX2150 toc02
FREQUENCY (MHz)
MODULATION OUTPUT POWER (dBm)
MODULATION OUTPUT POWER
vs. FREQUENCY
MAX2150 toc03
FREQUENCY (MHz)
MODULATION OUTPUT POWER (dBm)
OUTPUT POWER vs. LO POWER
MAX2150 toc04
LO POWER (dBm)
OUTPUT POWER (dBm)1089
CARRIER AND SIDEBAND
SUPPRESSIONS vs. LO POWER
MAX2150 toc05
LO POWER (dBm)
CARRIER AND SIDEBAND SUPPRESSIONS (dB)1098
MODULATOR OUTPUT POWER
vs. I/Q INPUT LEVEL
MAX2150 toc06
I/Q INPUT LEVEL (mV)
MODULATOR OUTPUT POWER (dBm)
Typical Operating Characteristics
(MAX2150 EV kit. VCC= +3V, SHDN= PLLEN = TXEN = high, BUFEN = low. Input I/Q signals: FI/Q= 500kHz, VI/Q= 1VP-P. I+, Q+ sin-
gle-ended input, driven from AC-coupled source. I-, Q- single-ended inputs are AC-coupled to GND. RFOUT and BUFOUT output ports
are terminated in 50Ωloads. fLO=1750MHz, PLO= -10dBm, TA= +25°C, unless otherwise noted.)
MAX2150
Wideband I/Q Modulator with Sigma-Delta
Fractional-N Synthesizer
MODULATOR OUTPUT IP3 vs. VCC

MAX2150 toc07
VCC (V)
MODULATOR OUTPUT IP3 (dBm)
MODULATOR OUTPUT P1dB vs. VCC
MAX2150 toc08
VCC (V)
MODULATOR OUTPUT P1dB (dBm)
LO PORT INPUT RETURN LOSS
vs. FREQUENCY
MAX2150 toc09
FREQUENCY (MHz)
LO PORT RETURN LOSS (dB)
BUFOUT PORT RETURN LOSS
vs. FREQUENCY
MAX2150 toc10
FREQUENCY (MHz)
BUFOUT PORT RETURN LOSS (dB)
LO BUFFER OUTPUT POWER
vs. FREQUENCY
MAX2150 toc11
FREQUENCY (MHz)
LO BUFFER OUTPUT POWER (dBm)
LO BUFFER OUTPUT POWER
vs. FREQUENCY
MAX2150 toc12
FREQUENCY (MHz)
LO BUFFER OUTPUT POWER (dBm)
Typical Operating Characteristics (continued)
(MAX2150 EV kit. VCC= +3V, SHDN= PLLEN = TXEN = high, BUFEN = low. Input I/Q signals: FI/Q= 500kHz, VI/Q= 1VP-P. I+, Q+
single-ended input, driven from AC-coupled source. I-, Q- single-ended inputs are AC-coupled to GND. RFOUT and BUFOUT output
ports are terminated in 50Ωloads. fLO=1750MHz, PLO= -10dBm, TA= +25°C, unless otherwise noted.)
MAX2150
Wideband I/Q Modulator with Sigma-Delta
Fractional-N Synthesizer
OSCIN PORT SENSITIVITY
(SYNTHESIZER) vs. FREQUENCY

MAX2150 toc13
FREQUENCY (MHz)
OSCIN PORT SENSITIVITY (V)403530252015
OSCIN IMPEDANCE vs. FREQUENCY
MAX2150 toc14
FREQUENCY (MHz)
OSCIN PORT IMPEDANCE (403035202515
SYNTHESIZER PHASE NOISE
MAX2150 toc15
SPAN = 20kHzCENTER = 1.75MHz
I/Q MODULATOR OUTPUT SPURS
MAX2150 toc16
SPAN = 2 MHzCENTER = 1.75 GHz
Typical Operating Characteristics (continued)
(MAX2150 EV kit. VCC= +3V, SHDN= PLLEN = TXEN = high, BUFEN = low. Input I/Q signals: FI/Q= 500kHz, VI/Q= 1VP-P. I+, Q+
single-ended input, driven from AC-coupled source. I-, Q- single-ended inputs are AC-coupled to GND. RFOUT and BUFOUT output
ports are terminated in 50Ωloads. fLO=1750MHz, PLO= -10dBm, TA= +25°C, unless otherwise noted.)
MAX2150
Wideband I/Q Modulator with Sigma-Delta
Fractional-N Synthesizer
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