MAX2010ETI-MAX2010ETI+ Fast Delivery |IC PHOENIX CO.,LIMITED

MAX2010ETI ,500MHz to 1100MHz Adjustable RF PredistorterFeaturesThe MAX2010 adjustable RF predistorter is designed to♦ Up to 12dB ACPR Improvement*improve ..
MAX2010ETI+ ,500MHz to 1100MHz Adjustable RF PredistorterELECTRICAL CHARACTERISTICS(MAX2010 EV kit; V = V = +4.75V to +5.25V; no RF signal applied; INP, ING ..
MAX2010ETI+ ,500MHz to 1100MHz Adjustable RF PredistorterApplicationsGND* 1 21 VCCGGAINGND* 2 20 GND*CONTROLING 3 19 PBRAWGND* 4 18 PBEXPMAX2010GND* 5 17 PB ..
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MAX2016ETI ,2.7 V to 5.25 V, LF-to-2.5 GHz dual logarithmic detector/controller for power, gain, and VSWR measurementFeaturesThe MAX2016 dual logarithmic detector/controller is a ♦ Complete Gain and VSWR Detector/Con ..
MAX2016ETI+ ,LF-to-2.5GHz Dual Logarithmic Detector/Controller for Power, Gain, and VSWR MeasurementsFeaturesThe MAX2016 dual logarithmic detector/controller is a ♦ Complete Gain and VSWR Detector/Con ..
MAX5048AAUT#TG16 ,7.6A, 12ns, SOT23/TDFN MOSFET DriverApplicationsV /2CCMAX5048AAUT-T -40°C to +125°C 6 SOT23 ABECCMOSPower MOSFET SwitchingMAX5048BAUT-T ..
MAX5048BATT ,7.6A, 12ns, SOT23/TDFN MOSFET Driver MAX50487.6A, 12ns, SOT23/TDFN, MOSFET Driver
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MAX5048BAUT ,7.6A, 12ns, SOT23/TDFN MOSFET DriverELECTRICAL CHARACTERISTICS(V+ = +12V, T = -40°C to +125°C, unless otherwise noted. Typical values a ..
MAX5048BAUT ,7.6A, 12ns, SOT23/TDFN MOSFET DriverELECTRICAL CHARACTERISTICS(V+ = +12V, T = -40°C to +125°C, unless otherwise noted. Typical values a ..
MAX5048BAUT#TG16 ,7.6A, 12ns, SOT23/TDFN MOSFET DriverApplicationsV /2CCMAX5048AAUT-T -40°C to +125°C 6 SOT23 ABECCMOSPower MOSFET SwitchingMAX5048BAUT-T ..

MAX2010ETI-MAX2010ETI+
500MHz to 1100MHz Adjustable RF Predistorter
General Description
The MAX2010 adjustable RF predistorter is designed to
improve power amplifier (PA) adjacent-channel power
rejection (ACPR) by introducing gain and phase expan-
sion in a PA chain to compensate for the PA’s gain and
phase compression. With its +23dBm maximum input
power level and wide adjustable range, the MAX2010
can provide up to 12dB of ACPR improvement for
power amplifiers operating in the 500MHz to 1100MHz
frequency band. Higher frequencies of operation can
be achieved with this IC’s counterpart, the MAX2009.
The MAX2010 is unique in that it provides up to 6dB of
gain expansion and 21°of phase expansion as the input
power is increased. The amount of expansion is config-
urable through two independent sets of control: one set
adjusts the gain expansion breakpoint and slope, while
the second set controls the same parameters for phase.
With these settings in place, the linearization circuit can
be run in either a static set-and-forget mode, or a more
sophisticated closed-loop implementation can be
employed with real-time software-controlled distortion
correction. Hybrid correction modes are also possible
using simple lookup tables to compensate for factors
such as PA temperature drift or PA loading.
The MAX2010 comes in a 28-pin thin QFN exposed
pad (EP) package (5mm x 5mm) and is specified for
the extended (-40°C to +85°C) temperature range.
Applications
cdma2000™, GSM/EDGE, and iDEN Base Stations
Feed-Forward PA Architectures
Digital Baseband Predistortion Architectures
Military Applications
FeaturesUp to 12dB ACPR Improvement*Independent Gain and Phase Expansion ControlsGain Expansion Up to 6dBPhase Expansion Up to 21°500MHz to 1100MHz Frequency RangeExceptional Gain and Phase FlatnessGroup Delay <2.4ns (Gain and Phase Sections
Combined)±0.03ns Group Delay Ripple Over a 100MHz BandCapable of Handling Input Drives Up to +23dBmOn-Chip Temperature Variation CompensationSingle +5V SupplyLow Power Consumption: 75mW (typ)Fully Integrated into Small 28-Pin Thin QFN
Package
*Performance dependent on amplifier, bias, and modulation.
MAX2010
500MHz to 1100MHz Adjustable
RF Predistorter27262524232291011121314
MAX2010
GAIN
CONTROL
PHASE
CONTROL
GND*
GND*
ING
GND*
GND*
OUTP
GND*
VCCG
GND*
PBRAW
PBEXP
PBIN
GND*
VCCP
GND*
INP
GND*
PFS1PFS2
PDCS1PDCS2
GND*OUTGGND*GCSGFSGBPGND*
*INTERNALLY CONNECTED TO EXPOSED GROUND PADDLE.
Functional Diagram/
Pin Configuration
Ordering Information
19-2930; Rev 0; 8/03
*EP = Exposed paddle.
PARTTEMP RANGEPIN-PACKAGE
MAX2010ETI-T-40°C to +85°C28 Thin QFN-EP*
cdma2000 is a trademark of Telecommunications Industry
Assoc.
MAX2010
500MHz to 1100MHz Adjustable
RF Predistorter
ABSOLUTE MAXIMUM RATINGS
DC ELECTRICAL CHARACTERISTICS
(MAX2010 EV kit; VCCG= VCCP= +4.75V to +5.25V; no RF signal applied; INP, ING, OUTP, OUTG are AC-coupled and terminated to
50Ω. VPF_S1= open; PBEXP shorted to PBRAW; VPDCS1= VPDCS2= 0.8V; VPBIN= VGBP= VGCS= GND; VGFS= VCCG;TA= -40°C to
+85°C. Typical values are at VCCG= VCCP= +5.0V, TA= +25°C, unless otherwise noted.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
VCCG, VCCPto GND..............................................-0.3V to +5.5V
ING, OUTG, GCS, GFS, GBP to GND......-0.3V to (VCCG+ 0.3V)
INP, OUTP, PFS_, PDCS_, PBRAW,
PBEXP, PBIN to GND............................-0.3V to (VCCP+ 0.3V)
Input (ING, INP, OUTP, OUTG) Level............................+23dBm
PBEXP Output Current........................................................±1mA
Continuous Power Dissipation (TA= +70°C)
28-Pin Thin QFN-EP
(derate 21mW/°C above +70°C)...............................1667mW
Operating Temperature Range...........................-40°C to +85°C
Junction Temperature......................................................+150°C
Storage Temperature Range.............................-65°C to +150°C
Lead Temperature (soldering 10s)..................................+300°C
PARAMETERCONDITIONSMINTYPMAXUNITS
Supply VoltageVCCG, VCCP4.755.25V
VCCP5.87Supply CurrentVCCG1012.1mA
PBIN, PBRAW0VCCPAnalog Input Voltage RangeGBP, GFS, GCS0VCCGV
VGFS = VGCS = VPBRAW = 0V-2+2
VGBP = 0 to +5V-100+170Analog Input Current
VPBIN = 0 to +5V-100+220
Logic-Input High VoltagePDCS1, PDCS2 (Note 1)2.0V
Logic-Input Low VoltagePDCS1, PDCS2 (Note 1)0.8V
Logic Input Current-2+2µA
MAX2010
500MHz to 1100MHz Adjustable
RF Predistorter
AC ELECTRICAL CHARACTERISTICS
(MAX2010 EV kit, VCCG= VCCP= +4.75V to +5.25V, 50Ωenvironment, PIN= -20dBm, fIN= 500MHz to 1100MHz, VGCS= +1.0V,
VGFS= +5.0V, VGBP= +1.2V, VPBIN= VPDCS1= VPDCS2= 0V, VPF_S1= +5V, VPBRAW= VPBEXP,TA= -40°C to +85°C. Typical val-
ues are at fIN= 880MHz, VCCG= VCCP= +5V, TA= +25°C, unless otherwise noted.) (Notes 1, 2)
PARAMETERCONDITIONSMINTYPMAXUNITS
Operating Frequency Range5001100MHz
VSWRING, INP, OUTG, OUTP1.3:1
PHASE CONTROL SECTION
Nominal Gain-5.5dB
Gain Variation Over TemperatureTA = -40°C to +85°C-1.7dB
Gain FlatnessOver a 100MHz band±0.1dB
Phase-Expansion Breakpoint
MaximumVPBIN = +5V23dBm
Phase-Expansion Breakpoint
MinimumVPBIN = 0V0.7dBm
Phase-Expansion Breakpoint
Variation Over TemperatureTA = -40°C to +85°C±1.5dB
VPF_S1 = +5V,
VPDCS1 = VPDCS2 = 0V,
PIN = -20 dBm to +23 dBm
VPDCS1 = 5V,
VPDCS2 = 0V,
VPF_S1 = +1.5V
VPDCS1 = 0V,
VPDCS2 = 5V,
VPF_S1 = +1.5V
Phase Expansion
VPF_S1 = 0V,
VPDCS1 = VPDCS2 = +5V,
PIN = -20dBm to +23dBm
Degrees
Phase-Expansion Slope
MaximumPIN = +9dBm1.4Degrees
/dB
Phase-Expansion Slope Minimum
VPF_S1 = 0V,
VPDCS1 = VPDCS2 = +5V,
PIN = +9dBm
0.6Degrees
/dB
Phase-Slope Variation Over
TemperaturePIN = +9dBm, TA = -40°C to +85°C0.05Degrees
/dB
Phase RippleOver a 100MHz band, deviation from linear phase±0.02Degrees
Noise Figure5.5dB
Absolute Group DelayInterconnects de-embedded1.3ns
Group Delay RippleOver a 100MHz band±0.01ns
Parasitic Gain ExpansionPIN = -20dBm to +23dBm+0.4dB
MAX2010
500MHz to 1100MHz Adjustable
RF Predistorter
Note 1:Guaranteed by design and characterization.
Note 2:All limits reflect losses and characteristics of external components shown in the Typical Application Circuit, unless otherwise
noted.
AC ELECTRICAL CHARACTERISTICS (continued)
(MAX2010 EV kit, VCCG= VCCP= +4.75V to +5.25V, 50Ωenvironment, PIN= -20dBm, fIN= 500MHz to 1100MHz, VGCS= +1.0V,
VGFS= +5.0V, VGBP= +1.2V, VPBIN= VPDCS1= VPDCS2= 0V, VPF_S1= +5V, VPBRAW= VPBEXP,TA= -40°C to +85°C. Typical val-
ues are at fIN= 880MHz, VCCG= VCCP= +5V, TA= +25°C, unless otherwise noted.) (Notes 1, 2)
PARAMETERCONDITIONSMINTYPMAXUNITS
GAIN CONTROL SECTION
VGCS = 0V, VGFS = +5V-24.3Nominal Gain
VGCS = +5V, VGFS = 0V-7.6
Gain Variation Over TemperatureTA = -40°C to +85°C-1.4dB
Gain FlatnessOver a 100MHz band±0.2dB
Gain-Expansion Breakpoint
MaximumVGBP = +5V23dBm
Gain-Expansion Breakpoint
MinimumVGBP = +0.5V-2.5dBm
Gain-Expansion Breakpoint
Variation Over TemperatureTA = -40°C to +85°C-0.5dB
VGFS = +5V, PIN = -20dBm to +23dBm5.3Gain-ExpansionVGFS = 0V, PIN = -20dBm to +23dBm3.1dB
VGFS = +5V, PIN = +15dBm0.43Gain-Expansion SlopeVGFS = +0V, PIN = +15dBm0.23dB/dB
Gain-Slope Variation Over
TemperaturePIN = +15dBm, TA = -40°C to +85°C-0.01dB/dB
Noise Figure14.9dB
Absolute Group DelayInterconnects de-embedded1.12ns
Group Delay RippleOver a 100MHz band±0.02ns
Phase RippleOver a 100MHz band, deviation from linear phase±0.09Degrees
Parasitic Phase ExpansionPIN = -20dBm to +23dBm+3Degrees
MAX2010
500MHz to 1100MHz Adjustable
RF Predistorter
SUPPLY CURRENT
vs. SUPPLY VOLTAGE
MAX2010 toc01
SUPPLY VOLTAGE (V)
SUPPLY CURRENT (mA)
TA = +85°C
TA = +25°C
TA = -40°C
SMALL-SIGNAL INPUT RETURN LOSS
vs. FREQUENCY
MAX2010 toc02
INPUT RETURN LOSS (dB)
FREQUENCY (GHz)
A = VPDCS1 = VPDCS2 = VPF_S1 = 0V
B = VPDCS1 = VPDCS2 = 0V, VPF_S1 = 5V
C = VPDCS1 = VPDCS2 = 5V, VPF_S1 = 0V
D = VPDCS1 = VPDCS2 = VPF_S1 = 5V
SMALL-SIGNAL OUTPUT RETURN LOSS
vs. FREQUENCY
MAX2010 toc03
OUTPUT RETURN LOSS (dB)
FREQUENCY (GHz)
A = VPDCS1 = VPDCS2 = VPF_S1 = 0V
B = VPDCS1 = VPDCS2 = 0V, VPF_S1 = 5V
C = VPDCS1 = VPDCS2 = 5V, VPF_S1 = 0V
D = VPDCS1 = VPDCS2 = VPF_S1 = 5VC
LARGE-SIGNAL INPUT RETURN LOSS
vs. FREQUENCY
MAX2010 toc04
INPUT RETURN LOSS (dB)
FREQUENCY (GHz)
PIN = +15dBm
A = VPDCS1 = VPDCS2 = VPF_S1 = 0V
B = VPDCS1 = VPDCS2 = 0V, VPF_S1 = 5V
C = VPDCS1 = VPDCS2 = 5V, VPF_S1 = 0V
D = VPDCS1 = VPDCS2 = VPF_S1 = 5V
LARGE-SIGNAL OUTPUT RETURN LOSS
vs. FREQUENCY
MAX2010 toc05
OUTPUT RETURN LOSS (dB)
FREQUENCY (GHz)
PIN = +15dBm
A = VPDCS1 = VPDCS2 = VPF_S1 = 0V
B = VPDCS1 = VPDCS2 = 0V, VPF_S1 = 5V
C = VPDCS1 = VPDCS2 = 5V, VPF_S1 = 0V
D = VPDCS1 = VPDCS2 = VPF_S1 = 5VC
SMALL-SIGNAL GAIN
vs. FREQUENCY
MAX2010 toc06
FREQUENCY (GHz)
GAIN (dB)
TA = +85°C
TA = +25°C
TA = -40°C
Typical Operating Characteristics
Phase Control Section
(MAX2010 EV kit, VCCP= +5.0V, PIN= -20dBm, VPBIN= 0V, VPF_S1 = +5.0V, VPDCS1= VPDCS2= 0V, fIN= 880MHz, TA= +25°C
unless otherwise noted.)
MAX2010
500MHz to 1100MHz Adjustable
RF Predistorter
SMALL-SIGNAL GAIN
vs. FREQUENCY
MAX2010 toc07
FREQUENCY (GHz)
GAIN (dB)
VCCP = 4.75V, 5.0V, 5.25V
SMALL-SIGNAL GAIN
vs. COARSE SLOPE
MAX2010 toc08
COARSE SLOPE (V)
GAIN (dB)
PDCS1 = 0
PDCS2 = 5
PDCS1 = 5
PDCS2 = 0
PDCS1 = 0
PDCS2 = 0
PDCS1 = 5
PDCS2 = 5
VPF_S1 = 0V
VPF_S1 = 1.5V
VPF_S1 = 5V
SMALL-SIGNAL GAIN
vs. COARSE SLOPE
MAX2010 toc09
COARSE SLOPE (V)
GAIN (dB)
PDCS1 = 0
PDCS2 = 5
PDCS1 = 5
PDCS2 = 0
PDCS1 = 0
PDCS2 = 0
PDCS1 = 5
PDCS2 = 5
TA = -40°C
TA = +25°C
TA = +85°C
GROUP DELAY vs. FREQUENCY
MAX2010 toc10
FREQUENCY (GHz)
DELAY (ns)
A = VPDCS1 = VPDCS2 = VPF_S1 = 0V
B = VPDCS1 = VPDCS2 = 0V, VPF_S1 = 5V
C = VPDCS1 = VPDCS2 = 5V, VPF_S1 = 0V
D = VPDCS1 = VPDCS2 = VPF_S1 = 5V
INTERCONNECTS DE-EMBEDDEDB
NOISE FIGURE vs. FREQUENCY
MAX2010 toc11
NOISE FIGURE (dB)
FREQUENCY (GHz)
A = VPDCS1 = VPDCS2 = VPF_S1 = 0V
B = VPDCS1 = VPDCS2 = 0V, VPF_S1 = 5V
C = VPDCS1 = VPDCS2 = 5V, VPF_S1 = 0V
D = VPDCS1 = VPDCS2 = VPF_S1 = 5V
0.51.1C
SUPPLY CURRENT vs. INPUT POWER
MAX2010 toc12
INPUT POWER (dBm)
SUPPLY CURRENT (mA)
A = VPBIN = 0V
B = VPBIN = 0.5V
C = VPBIN = 1.0V
D = VPBIN = 1.5V
E = VPBIN = 3.0V161284
024D
Typical Operating Characteristics (continued)
Phase Control Section (continued)
(MAX2010 EV kit, VCCP= +5.0V, PIN= -20dBm, VPBIN= 0V, VPF_S1 = +5.0V, VPDCS1= VPDCS2= 0V, fIN= 880MHz, TA= +25°C
unless otherwise noted.)
MAX2010
500MHz to 1100MHz Adjustable
RF Predistorter
GAIN EXPANSION vs. INPUT POWER
MAX2010 toc13
INPUT POWER (dBm)
GAIN (dB)-2131823
A = VPBIN = 0V
B = VPBIN = 0.5V
C = VPBIN = 1.0V
D = VPBIN = 1.5V
E = VPBIN = 2.0V
F = VPBIN = 2.5V
-5.7EF
PHASE EXPANSION vs. INPUT POWER
MAX2010 toc14
INPUT POWER (dBm)
PHASE (DEGREES)-2131823
A = VPBIN = 0V
B = VPBIN = 0.5V
C = VPBIN = 1.0V
D = VPBIN = 1.5V
E = VPBIN = 2.0V
F = VPBIN = 2.5V
GAIN EXPANSION vs. INPUT POWER
MAX2010 toc15
INPUT POWER (dBm)
GAIN (dB)38-2131823
A = VPDCS1 = VPDCS2 = 0V
B = VPDCS1 = 5V, VPDCS2 = 0V
C = VPDCS1 = 0V, VPDCS2 = 5V
D = VPDCS1 = VPDCS2 = 5V
GAIN EXPANSION vs. INPUT POWER
MAX2010 toc16
INPUT POWER (dBm)
GAIN (dB)
A = VPF_S1 = 0V
B = VPF_S1 = 0.5V
C = VPF_S1 = 1.0V
D = VPF_S1 = 1.5V
E = VPF_S1 = 2.0V
F = VPF_S1 = 5.0V
VPDCS1 = 5.0V
-4.8DCB
PHASE EXPANSION vs. INPUT POWER
MAX2010 toc17
INPUT POWER (dBm)
PHASE (DEGREES)-2131823
A = VPF_S1 = 0V
B = VPF_S1 = 0.5V
C = VPF_S1 = 1.0V
D = VPF_S1 = 1.5V
E = VPF_S1 = 2.0V
F = VPF_S1 = 5.0V
VPDCS1 = 5.0VB-15
PHASE EXPANSION vs. INPUT POWER
MAX2010 toc18
INPUT POWER (dBm)
PHASE (DEGREES)-2131823
A = VPDCS1 = VPDCS2 = 0V
B = VPDCS1 = 5V, VPDCS2 = 0V
C = VPDCS1 = 0V, VPDCS2 = 5V
D = VPDCS1 = VPDCS2 = 5V-15
Typical Operating Characteristics (continued)
Phase Control Section (continued)
(MAX2010 EV kit, VCCP= +5.0V, PIN= -20dBm, VPBIN= 0V, VPF_S1 = +5.0V, VPDCS1= VPDCS2= 0V, fIN= 880MHz, TA= +25°C
unless otherwise noted.)
MAX2010
500MHz to 1100MHz Adjustable
RF Predistorter
GAIN EXPANSION vs. INPUT POWER
MAX2010 toc19
INPUT POWER (dBm)
GAIN (dB)38-2131823
VPDCS1 = 5.0, VPF_S1 = 1.5V
TA = -40°C
TA = +25°C
TA = +85°C
PHASE EXPANSION vs. INPUT POWER
INPUT POWER (dBm)
PHASE (DEGREES)-15
VPDCS1 = 5.0, VPF_S1 = 1.5V
TA = -40°C
TA = +25°C
TA = +85°C
MAX2010 toc20
SUPPLY CURRENT vs. SUPPLY VOLTAGE
MAX2010 toc21
SUPPLY VOLTAGE (V)
SUPPLY CURRENT (mA)
TA = +85°C
TA = +25°C
TA = -40°C
SMALL-SIGNAL INPUT RETURN LOSS
vs. FREQUENCY
MAX2010 toc22
FREQUENCY (GHz)
INPUT RETURN LOSS (dB)
A = VGCS = 0V, VGFS = 0V
B = VGCS = 0V, VGFS = 5V
C = VGCS = 5V, VGFS = 0V
D = VGCS = 5V, VGFS = 5V
C, D
A, B
SMALL-SIGNAL OUTPUT RETURN LOSS
vs. FREQUENCY
MAX2010 toc23
FREQUENCY (GHz)
OUTPUT RETURN LOSS (dB)
A = VGCS = 0V, VGFS = 0V
B = VGCS = 0V, VGFS = 5V
C = VGCS = 5V, VGFS = 0V
D = VGCS = 5V, VGFS = 5V
C, D
A, B
Typical Operating Characteristics
Gain Control Section
(MAX2010 EV kit, VCCG= +5.0V, PIN= -20dBm, VGBP= +1.2V, VGFS= +5.0V, VGCS= +1.0V, fIN= 880MHz, TA= +25°C, unless
otherwise noted.)
Typical Operating Characteristics (continued)
Phase Control Section (continued)
(MAX2010 EV kit, VCCP= +5.0V, PIN= -20dBm, VPBIN= 0V, VPF_S1 = +5.0V, VPDCS1= VPDCS2= 0V, fIN= 880MHz, TA= +25°C
unless otherwise noted.)
MAX2010
500MHz to 1100MHz Adjustable
RF Predistorter
LARGE-SIGNAL OUTPUT RETURN LOSS
vs. FREQUENCY
MAX2010 toc25
FREQUENCY (GHz)
OUTPUT RETURN LOSS (dB)
A = VGCS = 0V, VGFS = 0V
B = VGCS = 0V, VGFS = 5V
C = VGCS = 5V, VGFS = 0V
D = VGCS = 5V, VGFS = 5V
0.51.1C
PIN = +15dBm
SMALL-SIGNAL GAIN vs. FREQUENCY
MAX2010 toc26
FREQUENCY (GHz)
GAIN (dB)
TA = +25°C
TA = -40°C
TA = +85°C
SMALL-SIGNAL GAIN vs. FREQUENCY
MAX2010 toc27
FREQUENCY (GHz)
GAIN (dB)
VCCG = 4.75V, 5.0V, 5.25V
SMALL-SIGNAL GAIN vs. VGCS
MAX2010 toc28
VGCS (V)
GAIN (dB)
VGFS = 0V, 1.5V, 5.0V4215
SMALL-SIGNAL GAIN vs. VGCS
MAX2010 toc29
VGCS (V)
GAIN (dB)
TA = -40°C
TA = +25°C
VGFS = +1.5V
TA = +85°C
LARGE-SIGNAL INPUT RETURN LOSS
vs. FREQUENCY
MAX2010 toc24
FREQUENCY (GHz)
INPUT RETURN LOSS (dB)
A = VGCS = 0V, VGFS = 0V
B = VGCS = 0V, VGFS = 5V
C = VGCS = 5V, VGFS = 0V
D = VGCS = 5V, VGFS = 5V
0.51.1C
PIN = +15dBm
Typical Operating Characteristics (continued)
Gain Control Section (continued)
(MAX2010 EV kit, VCCP= +5.0V, PIN= -20dBm, VPBIN= 0V, VPF_S1 = +5.0V, VPDCS1= VPDCS2= 0V, fIN= 880MHz, TA= +25°C
unless otherwise noted.)
MAX2010
500MHz to 1100MHz Adjustable
RF Predistorter
NOISE FIGURE vs. FREQUENCY
MAX2010 toc31
NOISE FIGURE (dB)
FREQUENCY (GHz)
A = VGCS = 0V, VGFS = 0V
B = VGCS = 0V, VGFS = 5V
C = VGCS = 1.5V, VGFS = 5V
D = VGCS = 5V, VGFS = 0V
E = VGCS = 5V, VGFS = 5V
SUPPLY CURRENT vs. INPUT POWER
MAX2010 toc32
SUPPLY CURRENT (mA)812201624
INPUT POWER (dBm)
A = VGBP = 0V
B = VGBP = 0.5V
C = VGBP = 1.0V
D = VGBP = 1.5V
E = VGBP = 3.0V
GAIN EXPANSION vs. INPUT POWER
MAX2010 toc33
GAIN (dB)-238181323
INPUT POWER (dBm)
A = VGBP = 0V
B = VGBP = 0.5V
C = VGBP = 1.0V
D = VGBP = 1.5V CE
E = VGBP = 2.0V
F = VGBP = 2.5V
G = VGBP = 3.5V
H = VGBP = 5.0V H
PHASE EXPANSION vs. INPUT POWER
MAX2010 toc34
PHASE (DEGREES)-238181323
INPUT POWER (dBm)
A = VGBP = 0V
B = VGBP = 0.5V
C = VGBP = 1.0V
D = VGBP = 1.5V
E = VGBP = 2.0V
F = VGBP = 2.5V
G = VGBP = 3.5V
H = VGBP = 5.0V BG
Typical Operating Characteristics (continued)
Gain Control Section (continued)
(MAX2010 EV kit, VCCP= +5.0V, PIN= -20dBm, VPBIN= 0V, VPF_S1 = +5.0V, VPDCS1= VPDCS2= 0V, fIN= 880MHz, TA= +25°C
unless otherwise noted.)
GROUP DELAY vs. FREQUENCY
MAX2010 toc30
FREQUENCY (GHz)
INTERCONNECTS DE-EMBEDDED
DELAY (ns)
A = VGCS = 0V, VGFS = 0V
B = VGCS = 0V, VGFS = 5V
C = VGCS = 5V, VGFS = 0V
D = VGCS = 5V, VGFS = 5V
C, D

Partno	Mfg	Dc	Qty	Available	Descript
MAX2010ETI	MAXIM	N/a	100	avai	500MHz to 1100MHz Adjustable RF Predistorter
MAX2010ETI+ \|MAX2010ETI	MAXIM/DALLAS	N/a	25	avai	500MHz to 1100MHz Adjustable RF Predistorter
MAX2010ETI+ \|MAX2010ETI	MAXIM	N/a	100	avai	500MHz to 1100MHz Adjustable RF Predistorter