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MAX2009ETI+
1200MHz to 2500MHz Adjustable RF Predistorter
General DescriptionThe MAX2009 adjustable RF predistorter is designed to
improve power amplifier (PA) adjacent-channel power
rejection (ACPR) by introducing gain and phase expan-
sion in a PA chain to compensate for the PA’s gain and
phase compression. With its +23dBm maximum input
power level and wide adjustable range, the MAX2009
can provide up to 12dB of ACPR improvement for
power amplifiers operating in the 1200MHz to 2500MHz
frequency band. Lower frequencies of operation can be
achieved with this IC’s counterpart, the MAX2010.
The MAX2009 is unique in that it provides up to 7dB of
gain expansion and 24°of phase expansion as the
input power is increased. The amount of expansion is
configurable through two independent sets of control:
one set adjusts the gain expansion breakpoint
and slope, while the second set controls the same
parameters for phase. With these settings in place, the
linearization circuit can be run in either a static set-and-
forget mode, or a more sophisticated closed-loop
implementation can be employed with real-time soft-
ware-controlled distortion correction. Hybrid correction
modes are also possible using simple lookup tables to
compensate for factors such as PA temperature drift
or PA loading.
The MAX2009 comes in a 28-pin thin QFN exposed
pad (EP) package (5mm x 5mm) and is specified for
the extended (-40°C to +85°C) temperature range.
ApplicationsWCDMA/UMTS, cdma2000, DCS1800, and
PCS1900 Base Stations
Feed-Forward PA Architectures
Digital Baseband Predistortion Architectures
Military Applications
WLAN Applications
FeaturesUp to 12dB ACPR Improvement*Independent Gain and Phase Expansion ControlsGain Expansion Up to 7dBPhase Expansion Up to 24°1200MHz to 2500MHz Frequency RangeExceptional Gain and Phase FlatnessGroup Delay <1.3ns (Gain and Phase Sections
Combined)±0.04ns Group Delay Ripple Over a 100MHz Band
Capable of Handling Input Drives Up to +23dBmOn-Chip Temperature Variation CompensationSingle +5V SupplyLow Power Consumption: 75mW (typ)Fully Integrated into Small 28-Pin Thin QFN
Package*Performance dependent on amplifier, bias, and modulation.
MAX2009
1200MHz to 2500MHz Adjustable
RF Predistorter27262524232291011121314
MAX2009
GAIN
CONTROL
PHASE
CONTROL
GND*
GND*
ING
GND*
GND*
OUTP
GND*
VCCG
GND*
PBRAW
PBEXP
PBIN
GND*
VCCP
GND*
INP
GND*
PFS1PFS2
PDCS1PDCS2
GND*OUTGGND*GCSGFSGBPGND*
*INTERNALLY CONNECTED TO EXPOSED GROUND PADDLE.
Functional Diagram/
Pin Configuration
Ordering Information19-2929; Rev 0; 8/03
*EP = Exposed paddle.
EVALUATION KIT
AVAILABLE
PARTTEMP RANGEPIN-PACKAGEMAX2009ETI-T-40°C to +85°C28 Thin QFN-EP*
MAX2009
1200MHz to 2500MHz Adjustable
RF Predistorter
ABSOLUTE MAXIMUM RATINGS
DC ELECTRICAL CHARACTERISTICS(MAX2009 EV kit; VCCG= VCCP= +4.75V to +5.25V; no RF signal applied; INP, ING, OUTP, OUTG are AC-coupled and terminated to
50Ω; VPF_S1= open; PBEXP shorted to PBRAW; VPDCS1= VPDCS2= 0.8V; VPBIN= VGBP= VGCS= GND; VGFS= VCCG; TA= -40°C to
+85°C. Typical values are at VCCG= VCCP= +5.0V, TA= +25°C, unless otherwise noted.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
VCCG, VCCPto GND..............................................-0.3V to +5.5V
ING, OUTG, GCS, GFS, GBP to GND......-0.3V to (VCCG+ 0.3V)
INP, OUTP, PFS_, PDCS_, PBRAW,
PBEXP, PBIN to GND............................-0.3V to (VCCP+ 0.3V)
Input (ING, INP, OUTP, OUTG) Level............................+23dBm
PBEXP Output Current........................................................±1mA
Continuous Power Dissipation (TA= +70°C)
28-Pin Thin QFN-EP
(derate 21mW/°C above +70°C)...............................1667mW
Operating Temperature Range...........................-40°C to +85°C
Junction Temperature......................................................+150°C
Storage Temperature Range.............................-65°C to +150°C
Lead Temperature (soldering 10s)..................................+300°C
PARAMETERCONDITIONSMINTYPMAXUNITSSupply VoltageVCCG, VCCP4.755.25V
VCCP5.87Supply CurrentVCCG1012.1mA
PBIN, PBRAW0VCCPAnalog Input Voltage RangeGBP, GFS, GCS0VCCGV
VGFS = VGCS = VPBRAW = 0V-2+2
VGBP = 0 to +5V-100+170Analog Input Current
VPBIN = 0 to +5V-100+220
Logic-Input High VoltagePDCS1, PDCS2 (Note 1)2.0V
Logic-Input Low VoltagePDCS1, PDCS2 (Note 1)0.8V
Logic Input Current-2+2µA
MAX2009
1200MHz to 2500MHz Adjustable
RF Predistorter
AC ELECTRICAL CHARACTERISTICS(MAX2009 EV kit, VCCG= VCCP= +4.75V to +5.25V, 50Ωenvironment, PIN= -20dBm, fIN= 1200MHz to 2500MHz, VGCS= +1.0V,
VGFS= +5.0V, VGBP= +1.2V, VPBIN= VPDCS1= VPDCS2= 0V, VPF_S1= +5V, VPBRAW= VPBEXP, TA= -40°C to +85°C. Typical values
are at fIN= 2140MHz, VCCG= VCCP= +5V, TA= +25°C, unless otherwise noted.) (Notes 1, 2)
PARAMETERCONDITIONSMINTYPMAXUNITSOperating Frequency Range12002500MHz
VSWRING, INP, OUTG, OUTP1.3:1
PHASE CONTROL SECTIONNominal Gain-7.5dB
Gain Variation Over TemperatureTA = -40°C to +85°C-1.4dB
Gain FlatnessOver a 100MHz band±0.1dB
Phase-Expansion Breakpoint
MaximumVPBIN = +5V23dBm
Phase-Expansion Breakpoint
MinimumVPBIN = 0V3.7dBm
Phase-Expansion Breakpoint
Variation Over TemperatureTA = -40°C to +85°C±1.3dB
VPF_S1 = +5V, VPDCS1 = VPDCS2 = 0V,
PIN = -20 dBm to +23 dBm23.7
VPDCS1 = 5V, VPDCS2 = 0V, VPF_S1 = +1.5V14.2
VPDCS1 = 0V, VPDCS2 = 5V, VPF_S1 = +1.5V9.2Phase Expansion
VPF_S1 = 0V, VPDCS1 = VPDCS2 = +5V,
PIN = -20dBm to +23dBm7.6
Degrees
Phase-Expansion Slope
MaximumPIN = +15dBm1.2Degrees
/dB
Phase-Expansion Slope MinimumVPF_S1 = 0V, VPDCS1 = VPDCS2 = +5V,
PIN = +15dBm0.4Degrees
/dB
Phase Slope Variation Over
TemperaturePIN = +15dBm, TA = -40°C to +85°C-0.1Degrees
/dB
Phase RippleOver a 100MHz band, deviation from linear phase±0.15Degrees
Noise Figure7.5dB
Absolute Group DelayInterconnects de-embedded0.7ns
Group Delay RippleOver a 100MHz band±0.03ns
Parasitic Gain ExpansionPIN = -20dBm to +23dBm0.9dB
MAX2009
1200MHz to 2500MHz Adjustable
RF Predistorter
Note 1:Guaranteed by design and characterization.
Note 2:All limits reflect losses and characteristics of external components shown in the Typical Application Circuit, unless otherwise
noted.
AC ELECTRICAL CHARACTERISTICS (continued)(MAX2009 EV kit, VCCG= VCCP= +4.75V to +5.25V, 50Ωenvironment, PIN= -20dBm, fIN= 1200MHz to 2500MHz, VGCS= +1.0V,
VGFS= +5.0V, VGBP= +1.2V, VPBIN= VPDCS1= VPDCS2= 0V, VPF_S1= +5V, VPBRAW= VPBEXP, TA= -40°C to +85°C. Typical values
are at fIN= 2140MHz, VCCG= VCCP= +5V, TA= +25°C, unless otherwise noted.) (Notes 1, 2)
PARAMETERCONDITIONSMINTYPMAXUNITS
GAIN CONTROL SECTIONVGCS = 0V, VGFS = +5V-23Nominal Gain
VGCS = +5V, VGFS = 0V-8.5
Gain Variation Over TemperatureTA = -40°C to +85°C-1dB
Gain FlatnessOver a 100MHz band±0.3dB
Gain-Expansion Breakpoint
MaximumVGBP = +5V23dBm
Gain-Expansion Breakpoint
MinimumVGBP = +0.5V-3dBm
Gain-Expansion Breakpoint
Variation Over TemperatureTA = -40°C to +85°C-0.3dB
VGFS = +5V, PIN = -20dBm to +23dBm6.6Gain ExpansionVGFS = 0V, PIN = -20dBm to +23dBm3.6dB
VGFS = +5V, PIN = +15dBm0.5Gain-Expansion SlopeVGFS = +0V, PIN = +15dBm0.26dB/dB
Gain Slope Variation Over
TemperaturePIN = +15dBm, TA = -40°C to +85°C-0.04dB/dB
Noise Figure16dB
Absolute Group DelayInterconnects de-embedded0.61ns
Group Delay RippleOver a 100MHz band±0.01ns
Phase RippleOver a 100MHz band, deviation from linear phase±0.07Degrees
Parasitic Phase ExpansionPIN = -20dBm to +23dBm5Degrees
MAX2009
1200MHz to 2500MHz Adjustable
RF PredistorterSUPPLY CURRENT
vs. SUPPLY VOLTAGE
MAX2009TOC01
SUPPLY VOLTAGE (V)
SUPPLY CURRENT (mA)
TA = +85°C
TA = +25°C
TA = -40°C
SMALL-SIGNAL INPUT RETURN LOSS
vs. FREQUENCYMAX2009TOC02
INPUT RETURN LOSS (dB)
FREQUENCY (GHz)
A = VPDCS1 = VPDCS2 = VPF_S1 = 0V
B = VPDCS1 = VPDCS2 = 0V, VPF_S1 = 5V
C = VPDCS1 = VPDCS2 = 5V, VPF_S1 = 0V
D = VPDCS1 = VPDCS2 = VPF_S1 = 5VC
SMALL-SIGNAL OUTPUT RETURN LOSS
vs. FREQUENCYMAX2009TOC03
OUTPUT RETURN LOSS (dB)
FREQUENCY (GHz)
A = VPDCS1 = VPDCS2 = VPF_S1 = 0V
B = VPDCS1 = VPDCS2 = 0V, VPF_S1 = 5V
C = VPDCS1 = VPDCS2 = 5V, VPF_S1 = 0V
D = VPDCS1 = VPDCS2 = VPF_S1 = 5V
LARGE-SIGNAL INPUT RETURN LOSS
vs. FREQUENCYMAX2009TOC04
INPUT RETURN LOSS (dB)
FREQUENCY (GHz)
A = VPDCS1 = VPDCS2 = VPF_S1 = 0V
B = VPDCS1 = VPDCS2 = 0V, VPF_S1 = 5V
C = VPDCS1 = VPDCS2 = 5V, VPF_S1 = 0V
D = VPDCS1 = VPDCS2 = VPF_S1 = 5VA
PIN = +15dBm
LARGE-SIGNAL OUTPUT RETURN LOSS
vs. FREQUENCYMAX2009TOC05
OUTPUT RETURN LOSS (dB)
FREQUENCY (GHz)
A = VPDCS1 = VPDCS2 = VPF_S1 = 0V
B = VPDCS1 = VPDCS2 = 0V, VPF_S1 = 5V
C = VPDCS1 = VPDCS2 = 5V, VPF_S1 = 0V
D = VPDCS1 = VPDCS2 = VPF_S1 = 5VA
PIN = +15dBm
SMALL-SIGNAL GAIN
vs. FREQUENCY
MAX2009TOC06
FREQUENCY (GHz)
GAIN (dB)
TA = +85°C
TA = +25°C
TA = -40°C
Typical Operating Characteristics
Phase Control Section(MAX2009 EV kit, VCCP= +5.0V, PIN= -20dBm, VPBIN= 0V, VPF_S1 = +5.0V, VPDCS1= VPDCS2= 0V, fIN= 2140MHz, TA= +25°C,
unless otherwise noted.)
MAX2009
1200MHz to 2500MHz Adjustable
RF PredistorterSMALL-SIGNAL GAIN
vs. FREQUENCY
MAX2009TOC07
FREQUENCY (GHz)
GAIN (dB)
VCCP = 4.75V, 5.0V, 5.25V
SMALL-SIGNAL GAIN
vs. COARSE SLOPE
MAX2009TOC08
COARSE SLOPE (V)
GAIN (dB)
PDCS1 = 0,
PDCS2 = 5
PDCS1 = 5,
PDCS2 = 5
PDCS1 = 5,
PDCS2 = 0
PDCS1 = 0,
PDCS2 = 0
VPF_S1 = 1.5V
VPF_S1 = 0V
VPF_S1 = 5V
SMALL-SIGNAL GAIN
vs. COARSE SLOPE
MAX2009TOC09
COARSE SLOPE (V)
GAIN (dB)
TA = -40°C
TA = +25°C
TA = +85°C
PDCS1 = 0,
PDCS2 = 5
PDCS1 = 5,
PDCS2 = 5
PDCS1 = 5,
PDCS2 = 0
PDCS1 = 0,
PDCS2 = 0
GROUP DELAY
vs. FREQUENCYMAX2009TOC10
DELAY (ns)
FREQUENCY (GHz)
A = VPDCS1 = VPDCS2 = VPF_S1 = 0V
B = VPDCS1 = VPDCS2 = 0V, VPF_S1 = 5V
C = VPDCS1 = VPDCS2 = 5V, VPF_S1 = 0V
D = VPDCS1 = VPDCS2 = VPF_S1 = 5V
INTERCONNECTS DE-EMBEDDED
NOISE FIGURE vs. FREQUENCYMAX2009TOC11
NOISE FIGURE (dB)
FREQUENCY (GHz)
A = VPDCS1 = VPDCS2 = VPF_S1 = 0V
B = VPDCS1 = VPDCS2 = 0V, VPF_S1 = 5V
C = VPDCS1 = VPDCS2 = 5V, VPF_S1 = 0V
D = VPDCS1 = VPDCS2 = VPF_S1 = 5V
SUPPLY CURRENT vs. INPUT POWER
MAX2009TOC12
INPUT POWER (dBm)
SUPPLY CURRENT (mA)124162024
A = VPBIN = 0V
B = VPBIN = 0.5V
C = VPBIN = 1.0VA
D = VPBIN = 1.5V
E = VPBIN = 3.0V
Typical Operating Characteristics (continued)
Phase Control Section (continued)(MAX2009 EV kit, VCCP= +5.0V, PIN= -20dBm, VPBIN= 0V, VPF_S1 = +5.0V, VPDCS1= VPDCS2= 0V, fIN= 2140MHz, TA= +25°C,
unless otherwise noted.)
MAX2009
1200MHz to 2500MHz Adjustable
RF PredistorterGAIN EXPANSION vs. INPUT POWER
MAX2009TOC13
INPUT POWER (dBm)
GAIN (dB)38-2131823
A = VPBIN = 0V
B = VPBIN = 0.5V
C = VPBIN = 1.0VEF
D = VPBIN = 1.5V
E = VPBIN = 2.0V
F = VPBIN = 2.5V
PHASE EXPANSION vs. INPUT POWER
MAX2009TOC14
INPUT POWER (dBm)
PHASE (DEGREES)
A = VPBIN = 0V
B = VPBIN = 0.5V
C = VPBIN = 1.0V
D = VPBIN = 1.5V
E = VPBIN = 2.0V
F = VPBIN = 2.5V
GAIN EXPANSION vs. INPUT POWER
MAX2009TOC15
INPUT POWER (dBm)
GAIN (dB)38-2131823
A = VPDCS1 = VPDCS2 = 0V
B = VPDCS1 = 5V, VPDCS2 = 0V
C = VPDCS1 = 0V, VPDCS2 = 5V
D = VPDCS1 = VPDCS2 = 5V
GAIN EXPANSION vs. INPUT POWER
MAX2009TOC16
INPUT POWER (dBm)
GAIN (dB)38-2131823
A = VPF_S1 = 0V
B = VPF_S1 = 0.5V
C = VPF_S1 = 1.0V
D = VPF_S1 = 1.5V
E = VPF_S1 = 2.0V
F = VPF_S1 = 5.0V
VPDCS1 = 5.0V
PHASE EXPANSION vs. INPUT POWER
MAX2009TOC17
INPUT POWER (dBm)
PHASE (DEGREES)
A = VPF_S1 = 0V
B = VPF_S1 = 0.5V
C = VPF_S1 = 1.0VB
D = VPF_S1 = 1.5V
E = VPF_S1 = 2.0V
F = VPF_S1 = 5.0V
VPDCS1 = 5.0V
PHASE EXPANSION vs. INPUT POWER
MAX2009TOC18
INPUT POWER (dBm)
PHASE (DEGREES)
A = VPDCS1 = VPDCS2 = 0V
B = VPDCS1 = 5V, VPDCS2 = 0V
C = VPDCS1 = 0V, VPDCS2 = 5V
D = VPDCS1 = VPDCS2 = 5V
Typical Operating Characteristics (continued)
Phase Control Section (continued)(MAX2009 EV kit, VCCP= +5.0V, PIN= -20dBm, VPBIN= 0V, VPF_S1 = +5.0V, VPDCS1= VPDCS2= 0V, fIN= 2140MHz, TA= +25°C,
unless otherwise noted.)
MAX2009
1200MHz to 2500MHz Adjustable
RF PredistorterGAIN EXPANSION vs. INPUT POWER
MAX2009TOC19
INPUT POWER (dBm)
GAIN (dB)38-2131823
VPDCS1 = 5.0, VPF_S1 = 1.5V
TA = -40°C
TA = +25°C
TA = +85°C
PHASE EXPANSION vs. INPUT POWER
INPUT POWER (dBm)
PHASE (DEGREES)38-2131823
VPDCS1 = 5.0, VPF_S1 = 1.5V
TA = -40°C
TA = +25°C
TA = +85°C
MAX2009TOC20
SUPPLY CURRENT vs. SUPPLY VOLTAGE
MAX2009TOC21
SUPPLY VOLTAGE (V)
SUPPLY CURRENT (mA)
TA = +85°C
TA = +25°C
TA = -40°C
SMALL-SIGNAL INPUT RETURN LOSS
vs. FREQUENCY
MAX2009TOC22
FREQUENCY (GHz)
INPUT RETURN LOSS (dB)
A = VGCS = 0V, VGFS = 0V
B = VGCS = 0V, VGFS = 5V
C = VGCS = 5V, VGFS = 0V
D = VGCS = 5V, VGFS = 5VC
SMALL-SIGNAL OUTPUT RETURN LOSS
vs. FREQUENCY
MAX2009TOC23
FREQUENCY (GHz)
OUTPUT RETURN LOSS (dB)
A = VGCS = 0V, VGFS = 0V
B = VGCS = 0V, VGFS = 5V
C = VGCS = 5V, VGFS = 0V
D = VGCS = 5V, VGFS = 5VAC
Typical Operating Characteristics
Gain Control Section(MAX2009 EV kit, VCCG= +5.0V, PIN= -20dBm, VGBP= +1.2V, VGFS= +5.0V, VGCS= +1.0V, fIN= 2140MHz, TA= +25°C, unless
otherwise noted.)
Typical Operating Characteristics (continued)
Phase Control Section (continued)(MAX2009 EV kit, VCCP= +5.0V, PIN= -20dBm, VPBIN= 0V, VPF_S1 = +5.0V, VPDCS1= VPDCS2= 0V, fIN= 2140MHz, TA= +25°C,
unless otherwise noted.)
MAX2009
1200MHz to 2500MHz Adjustable
RF PredistorterLARGE-SIGNAL OUTPUT RETURN LOSS
vs. FREQUENCY
MAX2009TOC25
FREQUENCY (GHz)
OUTPUT RETURN LOSS (dB)
A = VGCS = 0V, VGFS = 0V
B = VGCS = 0V, VGFS = 5V
C = VGCS = 5V, VGFS = 0V
D = VGCS = 5V, VGFS = 5VAC
PIN = +15dBm
SMALL-SIGNAL GAIN vs. FREQUENCY
MAX2009TOC26
FREQUENCY (GHz)
GAIN (dB)
TA = -40°C
TA = +85°C
TA = +25°C
SMALL-SIGNAL GAIN vs. FREQUENCY
MAX2009TOC27
FREQUENCY (GHz)
GAIN (dB)
VCCG = 4.75V, 5.0V, 5.25V
SMALL-SIGNAL GAIN vs. VGCS
MAX2009TOC28
VGCS (V)
GAIN (dB)
VGFS = 0V, 1.5V, 5.0V
SMALL-SIGNAL GAIN vs. VGCS
MAX2009TOC29
VGCS (V)
GAIN (dB)
TA = +85°CTA = -40°C
TA = +25°C
LARGE-SIGNAL INPUT RETURN LOSS
vs. FREQUENCY
MAX2009TOC24
FREQUENCY (GHz)
INPUT RETURN LOSS (dB)
A = VGCS = 0V, VGFS = 0V
B = VGCS = 0V, VGFS = 5V
C = VGCS = 5V, VGFS = 0V
D = VGCS = 5V, VGFS = 5VAC
PIN = +15dBm
Typical Operating Characteristics (continued)
Gain Control Section (continued)(MAX2009 EV kit, VCCG= +5.0V, PIN= -20dBm, VGBP= +1.2V, VGFS= +5.0V, VGCS= +1.0V, fIN= 2140MHz, TA= +25°C, unless
otherwise noted.)
MAX2009
1200MHz to 2500MHz Adjustable
RF Predistorter
NOISE FIGURE vs. FREQUENCYMAX2009TOC31
NOISE FIGURE (dB)
FREQUENCY (GHz)
A = VGCS = 0V, VGFS = 0V
B = VGCS = 0V, VGFS = 5V
C = VGCS = 1.5V, VGFS = 5V
D = VGCS = 5V, VGFS = 0V
E = VGCS = 5V, VGFS = 5V
SUPPLY CURRENT vs. INPUT POWERMAX2009TOC32
SUPPLY CURRENT (mA)812201624
INPUT POWER (dBm)
A = VGBP = 0V
B = VGBP = 0.5V
C = VGBP = 1.0V
D = VGBP = 1.5V
E = VGBP = 3.0V
GAIN EXPANSION vs. INPUT POWERMAX2009TOC33
GAIN (dB)-238181323
INPUT POWER (dBm)
A = VGBP = 0V
B = VGBP = 0.5V
C = VGBP = 1.0V
D = VGBP = 1.5V
E = VGBP = 2.0V
F = VGBP = 2.5V
G = VGBP = 3.5V
H = VGBP = 5.0V FEH
PHASE EXPANSION vs. INPUT POWERMAX2009TOC34
PHASE (DEGREES)-238181323
INPUT POWER (dBm)
A = VGBP = 0V
B = VGBP = 0.5V
C = VGBP = 1.0V
D = VGBP = 1.5V CDA
E = VGBP = 2.0V
F = VGBP = 2.5V
G = VGBP = 3.5V
H = VGBP = 5.0V FEH
ypical Operating Characteristics (continued)
Gain Control Section (continued)(MAX2009 EV kit, VCCG= +5.0V, PIN= -20dBm, VGBP= +1.2V, VGFS= +5.0V, VGCS= +1.0V, fIN= 2140MHz, TA= +25°C, unless
otherwise noted.)
GROUP DELAY vs. FREQUENCY
MAX2009TOC30
FREQUENCY (GHz)
DELAY (ns)
A = VGCS = 0V, VGFS = 0V
B = VGCS = 0V, VGFS = 5V
INTERCONNECTS DE-EMBEDDED
C = VGCS = 5V, VGFS = 0V
D = VGCS = 5V, VGFS = 5VC