MAX19997AETX+T ,Dual, SiGe, High-Linearity, High-Gain, 2300MHz to 2700MHz Downconversion Mixer with LO Buffer/SwitchBlock Diagram appears atcdma2000 is a registered trademark of TelecommunicationsIndustry Associatio ..
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MAX19997AETX+T
Dual, SiGe, High-Linearity, High-Gain, 2300MHz to 2700MHz Downconversion Mixer with LO Buffer/Switch
MAX19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
General DescriptionThe MAX19997A dual downconversion mixer is a versa-
tile, highly integrated diversity downconverter that pro-
vides high linearity and low noise figure for a multitude of
1800MHz to 2900MHz base-station applications. The
MAX19997A fully supports both low- and high-side LO
injection architectures for the 2300MHz to 2900MHz
WiMAX™, LTE, WCS, and MMDS bands, providing
8.7dB gain, +24dBm input IP3, and 10.3dB NF in the
low-side configuration, and 8.7dB gain, +24dBm input
IP3, and 10.4dB NF in the high-side configuration. High-
side LO injection architectures can be further extended
down to 1800MHz with the addition of one tuning ele-
ment (a shunt inductor) on each RF port.
The device integrates baluns in the RF and LO ports,
an LO buffer, two double-balanced mixers, and a pair
of differential IF output amplifiers. The MAX19997A
requires a typical LO drive of 0dBm and a supply cur-
rent guaranteed below 420mA to achieve the targeted
linearity performance.
The MAX19997A is available in a compact 6mm x 6mm,
36-pin TQFN lead-free package with an exposed pad.
Electrical performance is guaranteed over the extended
temperature range, from TC= -40°C to +100°C.
Applications2.3GHz WCS Base Stations
2.5GHz WiMAX and LTE Base Stations
2.7GHz MMDS Base Stations
UMTS/WCDMA and cdma2000®3G Base
Stations
PCS1900 and EDGE Base Stations
PHS/PAS Base Stations
Fixed Broadband Wireless Access
Wireless Local Loop
Private Mobile Radios
Military Systems
Features1800MHz to 2900MHz RF Frequency Range1950MHz to 3400MHz LO Frequency Range50MHz to 550MHz IF Frequency RangeSupports Both Low-Side and High-Side LO
Injection8.7dB Conversion Gain+24dBm Input IP310.3dB Noise Figure+11.3dBm Input 1dB Compression Point70dBc Typical 2 x 2 Spurious Rejection at
PRF= -10dBmDual Channels Ideal for Diversity Receiver
ApplicationsIntegrated LO BufferIntegrated LO and RF Baluns for Single-Ended
InputsLow -3dBm to +3dBm LO DrivePin Compatible with the MAX19999 3000MHz to
4000MHz MixerPin Similar to the MAX9995 and MAX19995/
MAX19995A 1700MHz to 2200MHz Mixers and the
MAX9985 and MAX19985A 700MHz to 1000MHz
Mixers42dB Channel-to-Channel IsolationSingle 5.0V or 3.3V SupplyExternal Current-Setting Resistors Provide Option
for Operating Device in Reduced-Power/Reduced-
Performance Mode
Ordering Information
PARTTEMP RANGEPIN-PACKAGEMAX19997AETX+-40°C to +100°C36 TQFN-EP*
MAX19997AETX+T-40°C to +100°C36 TQFN-EP*
+Denotes a lead(Pb)-free/RoHS-compliant package.
*EP = Exposed pad.
T = Tape and reel.
Pin Configuration/Functional Block Diagram appears atWiMAX is a trademark of WiMAX Forum.
MAX19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
ABSOLUTE MAXIMUM RATINGS
+5.0V SUPPLY DC ELECTRICAL CHARACTERISTICS(Typical Application Circuitoptimized for the standard RF band (see Table 1), no input RF or LO signals applied, VCC= 4.75V to
5.25V, TC= -40°C to +85°C. Typical values are at VCC= 5.0V, TC= +25°C, unless otherwise noted. R1, R4 = 750Ω, R2, R5 = 698Ω.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
VCCto GND...........................................................-0.3V to +5.5V
RF_, LO to GND.....................................................-0.3V to +0.3V
IFM_, IFD_, IFM_SET, IFD_SET, LO_ADJ_M,
LO_ADJ_D to GND.................................-0.3V to (VCC+ 0.3V)
RF_, LO Input Power......................................................+15dBm
RF_, LO Current (RF_ and LO is DC
shorted to GND through balun)......................................50mA
Continuous Power Dissipation (Note 1) ..............................6.5W
Operating Case Temperature Range
(Note 4).................................................TC= -40°C to +100°C
Junction Temperature......................................................+150°C
Storage Temperature Range.............................-65°C to +150°C
Lead Temperature (soldering, 10s).................................+300°C
Soldering Temperature (reflow).......................................+260°C
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITSSupply VoltageVCC4.755.25V
VCC = 5.0V388420Total Supply CurrentICCVCC = 5.25V390.4mA
VCC (Pin 4) Supply Current
(Main and Diversity Paths)VCC = 5.25V2.5mA
VCC (Pin 10) Supply Current
(Diversity Path)VCC = 5.25V8.9mA
VCC (Pin 16) Supply Current
(Diversity Path)VCC = 5.25V109.3mA
VCC (Pin 21) Supply Current
(Main and Diversity Paths)VCC = 5.25V28.3mA
VCC (Pin 30) Supply Current
(Main Path)VCC = 5.25V109.3mA
VCC (Pin 36) Supply Current
(Main Path)VCC = 5.25V8.9mA
IFM Bias Supply Current (Main
Path)
Total bias feeding IFM- and IFM+ through
R3, L1 and L2; VCC = 5.25V61.6mA
IFD Bias Supply Current
Total bias feeding IFD+ and IFD- through
Note 1:Based on junction temperature TJ= TC+ (θJCx VCCx ICC). This formula can be used when the temperature of the exposed
pad is known while the device is soldered down to a PCB. See the Applications Informationsection for details. The junction
temperature must not exceed +150°C.
Note 2:Junction temperature TJ= TA+ (θJAx VCCx ICC). This formula can be used when the ambient temperature of the PCB is
known. The junction temperature must not exceed +150°C.
Note 3:Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial.
Note 4:TCis the temperature on the exposed pad of the package. TAis the ambient temperature of the device and PCB.
PACKAGE THERMAL CHARACTERISTICSJunction-to-Ambient Thermal Resistance (θJA)
(Notes 2, 3)...................................................................38°C/W
Junction-to-Board Thermal Resistance (θJB)................12.2°C/W
Junction-to-Case Thermal Resistance (θJC)
(Notes 1, 3)..................................................................7.4°C/W
MAX19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITSSupply VoltageVCC3.03.33.6V
Supply CurrentICCTotal supply current, VCC = 3.3V279310mA
+3.3V SUPPLY DC ELECTRICAL CHARACTERISTICS(Typical Application Circuit optimized for the standard RF band (see Table 1), no input RF or LO signals applied, VCC= 3.0V to 3.6V,= -40°C to +85°C. Typical values are at VCC= 3.3V, TC= +25°C, unless otherwise noted. R1, R4 = 1.1kΩ, R2, R5 = 845Ω.)
RECOMMENDED AC OPERATING CONDITIONS
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITSRF Frequency Without External
TuningfRF(Note 5)24002900MHz
RF Frequency with External
TuningfRFee Tab l e 2 for an outl i ne of tuni ng el em ents
op ti m i zed for 1950M H z op er ati on;
op ti m i zati on at other fr eq uenci es w i thi n the
1800M H z to 2400M H z r ang e can b e
achi eved w i th different component values;
contact the factory for details
18002400MHz
LO FrequencyfLO(Notes 5, 6)19503400MHz
Using Mini-Circuits TC4-1W-17 4:1
transformer as defined in the Typical
Application Circuit, IF matching
components affect the IF frequency range
(Notes 5, 6)
IF FrequencyfIF
Using alternative Mini-Circuits TC4-1W-7A
4:1 transformer, IF matching components
affect the IF frequency range (Notes 5, 6)250
MHz
LO Drive LevelPLO-3+3dBm
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITS fRF = 2400MHz to 2900MHz,
TC = +25°C (Notes 8, 9, 10) 8.1 8.7 9.3 Conversion Gain GC
TC = +100°C 8.1
dB
fRF = 2305MHz to 2360MHz 0.15
fRF = 2500MHz to 2570MHz 0.15
fRF = 2570MHz to 2620MHz 0.1
fRF = 2500MHz to 2690MHz 0.15
Conversion Gain Flatness
fRF = 2700MHz to 2900MHz 0.15
dB fRF = 2300MHz to 2900MHz,
+5.0V SUPPLY, HIGH-SIDE LO INJECTION AC ELECTRICAL CHARACTERISTICS(Typical Application Circuitoptimized for the standard RF band (see Table 1),VCC= 4.75V to 5.25V, RF and LO ports are driven
from 50Ωsources, PLO= -3dBm to +3dBm, PRF= -5dBm, fRF= 2300MHz to 2900MHz, fLO= 2650MHz to 3250MHz, fIF= 350MHz,
fRF< fLO, TC= -40°C to +85°C. Typical values are at VCC= 5.0V, PRF= -5dBm, PLO= 0dBm, fRF= 2600MHz, fLO= 2950MHz,
fIF= 350MHz, TC= +25°C, unless otherwise noted.) (Note 7)
MAX19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITSInput Compression PointIP1dB(Notes 8, 9, 11)9.611.3dBm
fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone
(Notes 8, 9)22.024
fRF = 2600MHz, fRF1 - fRF2 = 1MHz,
PRF = -5dBm per tone, TC = +25°C
(Notes 8, 9)
22.524Third-Order Input Intercept PointIIP3
PRF = -5dBm/tone, fRF1 - fRF2 = 1MHz,
TC = +100°C24.2
dBm
Thi r d - O r d er Inp ut Inter cep t P oi ntar i ati on Over Tem p er atur efRF1 - fRF2 = 1MHz, TC = -40°C to +100°C±0.3dBmi ng l e si d eb and , no b l ocker s p r esent
fRF = 2400M H z to 2900M H z ( N otes 6, 8, 10) 10.412.5
Noise FigureNFSSBSingle sideband, no blockers present,
fR F = 2400M H z to 2900M H z , TC = +25°C
(Notes 6, 8, 10)
Noise Figure Temperature
CoefficientTCNFSingle sideband, no blockers present,
TC = -40°C to +100°C0.018dB/°C
Noise Figure Under Blocking
ConditionsNFB
fBLOCKER = 2412MHz, PBLOCKER = 8dBm,
fRF = 2600MHz, fLO = 2950MHz, PLO =
0dBm, V C C = 5.0V, TC = + 25°C ( Notes 8, 12)
22.525dB
fRF = 2600MHz, fLO = 2950MHz,
PRF = -10dBm, fSPUR = fLO - 175MHz
(Note 8)69
PRF = -10dBm, TC = +100°C68
fRF = 2600MHz, fLO = 2950MHz,
PRF = -5dBm, fSPUR = fLO - 175MHz
(Notes 8, 9)64
2LO - 2RF Spur2 x 2
PRF = -5dBm, TC = +100°C63
dBc
fRF = 2600MHz, fLO = 2950MHz,
PRF = -10dBm, fSPUR = fLO - 116.67MHz,
TC = +25°C (Note 8)84
PRF = -10dBm, TC = +100°C85
fRF = 2600MHz, fLO = 2950MHz,
PRF = -5dBm, fSPUR = fLO - 116.67MHz,
TC = +25°C (Notes 8, 9)74
3LO - 3RF Spur3 x 3
PRF = -5dBm, TC = +100°C75
dBcLO on and IF terminated into a matched
+5.0V SUPPLY, HIGH-SIDE LO INJECTION AC ELECTRICAL CHARACTERISTICS
(continued)(Typical Application Circuitoptimized for the standard RF band (see Table 1),VCC= 4.75V to 5.25V, RF and LO ports are driven
from 50Ωsources, PLO= -3dBm to +3dBm, PRF= -5dBm, fRF= 2300MHz to 2900MHz, fLO= 2650MHz to 3250MHz, fIF= 350MHz,
fRF< fLO, TC= -40°C to +85°C. Typical values are at VCC= 5.0V, PRF= -5dBm, PLO= 0dBm, fRF= 2600MHz, fLO= 2950MHz,
fIF= 350MHz, TC= +25°C, unless otherwise noted.) (Note 7)
MAX19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
+5.0V SUPPLY, HIGH-SIDE LO INJECTION AC ELECTRICAL CHARACTERISTICS
(continued)(Typical Application Circuitoptimized for the standard RF band (see Table 1),VCC= 4.75V to 5.25V, RF and LO ports are driven
from 50Ωsources, PLO= -3dBm to +3dBm, PRF= -5dBm, fRF= 2300MHz to 2900MHz, fLO= 2650MHz to 3250MHz, fIF= 350MHz,
fRF< fLO, TC= -40°C to +85°C. Typical values are at VCC= 5.0V, PRF= -5dBm, PLO= 0dBm, fRF= 2600MHz, fLO= 2950MHz,
fIF= 350MHz, TC= +25°C, unless otherwise noted.) (Note 7)
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITS LO Input Return Loss RF and IF terminated into a matched
impedance 13 dB
IF Output Impedance ZIFNominal differential impedance at the IC’s
IF outputs 200
IF Output Return Loss
RF terminated into 50,LO driven by 50
source, IF transformed to 50 using
external components shown in the Typical
Application Circuit
21 dB 25 RF-to-IF Isolation TC = +100°C 24 dB
LO Leakage at RF Port (Notes 8, 9) -28 dBm
2LO Leakage at RF Port -33 dBm -18.5 LO Leakage at IF Port TC = +100°C -17.8 dBm
38.5 43
Channel Isolation
RFMAIN (RFDIV) converted
power measured at IFDIV
(IFMAIN) relative to IFMAIN
(IFDIV), all unused ports
terminated to 50TC = +100°C43.4
dB
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITSConversion GainGCfRF = 2400MHz to 2900MHz,
TC = +25°C (Notes 8, 9, 10)8.18.79.3dB
fRF = 2305MHz to 2360MHz0.2
fRF = 2500MHz to 2570MHz0.15
fRF = 2570MHz to 2620MHz0.2
fRF = 2500MHz to 2690MHz0.25
Conversion Gain Flatness
fRF = 2700MHz to 2900MHz0.25
Gain Variation Over TemperatureTCCGfRF = 2300MHz to 2900MHz, TC = -40°C to
+85°C-0.01dB/°C
+5.0V SUPPLY, LOW-SIDE LO INJECTION AC ELECTRICAL CHARACTERISTICS(Typical Application Circuitoptimized for the standard RF band (see Table 1), VCC= 4.75V to 5.25V, RF and LO ports are driven
from 50Ωsources, PLO= -3dBm to +3dBm, PRF= -5dBm, fRF= 2300MHz to 2900MHz, fLO= 1950MHz to 2550MHz, fIF= 350MHz,
fRF> fLO, TC= -40°C to +85°C. Typical values are at VCC= 5.0V, PRF= -5dBm, PLO= 0dBm, fRF= 2600MHz, fLO= 2250MHz,
fIF= 350MHz, TC= +25°C, unless otherwise noted.) (Note 7)
MAX19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITSfRF1 - fRF2 = 1MHz, PRF = -5dBm per tone
(Notes 8, 9)21.623dBm
Third-Order Input Intercept PointIIP3fRF = 2600MHz, fRF1 - fRF2 = 1MHz,
PRF = -5dBm per tone, TC = +25°C
(Notes 8, 9)23.8dBm
Thi r d - O r d er Inp ut Inter cep t P oi ntar i ati on Over Tem p er atur efRF1 - fRF2 = 1MHz, TC = -40°C to +85°C±0.3dBm
Single sideband, no blockers present
fRF = 2400MHz to 2900MHz (Notes 6, 8)10.313.0
Noise FigureNFSSBSingle sideband, no blockers present,
fRF = 2400MHz to 2900MHz, TC = +25°C
(Notes 6, 8)
Noise Figure Temperature
CoefficientTCNFSingle sideband, no blockers present,
TC = -40°C to +85°C0.018dB/°C
Noise Figure Under Blocking
ConditionsNFB
fBLOCKER = 2793MHz, PBLOCKER = 8dBm,
fRF = 2600MHz, fLO = 2250MHz,
PLO = 0dBm, V C C = 5.0V, TC = +25°C
(Notes 6, 8, 12)25dB
fRF = 2600MHz, fLO = 2250MHz,
PRF = -10dBm, fSPUR = fLO + 175MHz,
TC = +25°C (Note 8)67
2RF - 2LO Spur2 x 2
fRF = 2600MHz, fLO = 2250MHz,
PRF = -5dBm, fSPUR = fLO + 175MHz,
TC = +25°C (Notes 8, 9)62
dBc
fRF = 2600MHz, fLO = 2250MHz,
PRF = -10dBm, fSPUR = fLO + 116.67MHz,
TC = +25°C (Note 8)83
3RF - 3LO Spur3 x 3
fRF = 2600MHz, fLO = 2250MHz,
PRF = -5dBm, fSPUR = fLO + 116.67MHz,
TC = +25°C (Notes 8, 9)73
dBc
RF Input Return LossLO on and IF terminated into a matched
impedance16dB
LO Input Return LossRF and IF terminated into a matched
impedance11.5dB
+5.0V SUPPLY, LOW-SIDE LO INJECTION AC ELECTRICAL CHARACTERISTICS
(continued)(Typical Application Circuitoptimized for the standard RF band (see Table 1), VCC= 4.75V to 5.25V, RF and LO ports are driven
from 50Ωsources, PLO= -3dBm to +3dBm, PRF= -5dBm, fRF= 2300MHz to 2900MHz, fLO= 1950MHz to 2550MHz, fIF= 350MHz,
fRF> fLO, TC= -40°C to +85°C. Typical values are at VCC= 5.0V, PRF= -5dBm, PLO= 0dBm, fRF= 2600MHz, fLO= 2250MHz,
fIF= 350MHz, TC= +25°C, unless otherwise noted.) (Note 7)
MAX19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITSIF Output ImpedanceZIFNominal differential impedance at the IC’s
IF outputs200Ω
IF Output Return Loss
RF terminated into 50Ω, LO driven by 50Ω
source, IF transformed to 50Ω using
external components shown in the Typical
Application CircuitdB
RF-to-IF Isolation23.5dB
LO Leakage at RF Port(Notes 8, 9)-31-24dBm
2LO Leakage at RF Port-27dBm
LO Leakage at IF Port-9.6dBm
Channel Isolation
RFMAIN (RFDIV) converted power
measured at IFDIV (IFMAIN) relative to
IFMAIN (IFDIV), all unused ports terminated
to 50Ω (Notes 8, 9)
38.542dB
+3.3V SUPPLY, LOW-SIDE LO INJECTION AC ELECTRICAL CHARACTERISTICS(Typical Application Circuitoptimized for the standard RF band (see Table 1). Typical values are at VCC= 3.3V, PRF= -5dBm,
PLO= 0dBm, fRF= 2600MHz, fLO= 2250MHz, fIF= 350MHz, TC= +25°C, unless otherwise noted.) (Note 7)
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITSConversion GainGC(Note 9)8.5dB
fRF = 2305MHz to 2360MHz0.2
fRF = 2500MHz to 2570MHz0.15
fRF = 2570MHz to 2620MHz0.15
fRF = 2500MHz to 2690MHz0.25
Conversion Gain Flatness
fRF = 2700MHz to 2900MHz0.15
Gain Variation Over TemperatureTCCGfRF = 2300MHz to 2900MHz,
TC = -40°C to +85°C-0.01dB/°C
Input Compression PointIP1dB7.7dBm
Thi r d - O r d er Inp ut Inter cep t P oi ntIIP3fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone19.7dBm
Third-Order Input Intercept
Variation Over TemperaturefRF1 - fRF2 = 1MHz, TC = -40°C to +85°C±0.5dBm
Noise FigureNFSSBSingle sideband, no blockers present9.7dB
Noise Figure Temperature
CoefficientTCNFSingle sideband, no blockers present,
TC = -40°C to +85°C0.018dB/°C
+5.0V SUPPLY, LOW-SIDE LO INJECTION AC ELECTRICAL CHARACTERISTICS
(continued)(Typical Application Circuitoptimized for the standard RF band (see Table 1), VCC= 4.75V to 5.25V, RF and LO ports are driven
from 50Ωsources, PLO= -3dBm to +3dBm, PRF= -5dBm, fRF= 2300MHz to 2900MHz, fLO= 1950MHz to 2550MHz, fIF= 350MHz,
fRF> fLO, TC= -40°C to +85°C. Typical values are at VCC= 5.0V, PRF= -5dBm, PLO= 0dBm, fRF= 2600MHz, fLO= 2250MHz,
fIF= 350MHz, TC= +25°C, unless otherwise noted.) (Note 7)
MAX19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
+3.3V SUPPLY, LOW-SIDE LO INJECTION AC ELECTRICAL CHARACTERISTICS
(continued)(Typical Application Circuitoptimized for the standard RF band (see Table 1). Typical values are at VCC= 3.3V, PRF= -5dBm,
PLO= 0dBm, fRF= 2600MHz, fLO= 2250MHz, fIF= 350MHz, TC= +25°C, unless otherwise noted.) (Note 7)
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITSPRF = -10dBm, fSPUR = fLO + 175MHz742RF - 2LO Spur2 x 2PRF = -5dBm, fSPUR = fLO + 175MHz69dBc
PRF = -10dBm, fSPUR = fLO + 116.67MHz743RF - 3LO Spur3 x 3PRF = -5dBm, fSPUR = fLO + 116.67MHz64dBc
RF Input Return LossLO on and IF terminated into a matched
impedance16dB
LO Input Return LossRF and IF terminated into a matched
impedance11dB
IF Output ImpedanceZIFNominal differential impedance at the IC’s
IF outputs200Ω
IF Output Return Loss
RF terminated into 50Ω, LO driven by 50Ω
source, IF transformed to 50Ω using
external components shown in the Typical
Application CircuitdB
RF-to-IF Isolation25dB
LO Leakage at RF Port-36dBm
2LO Leakage at RF Port-31dBm
LO Leakage at IF Port-13.5dBm
Channel Isolation
RFMAIN (RFDIV) converted power
measured at IFDIV (IFMAIN) relative to
IFMAIN (IFDIV), all unused ports terminated
to 50ΩdB
Note 5:Operation outside this range is possible, but with degraded performance of some parameters. See the Typical Operating
Characteristics.
Note 6:Not production tested.
Note 7:All limits reflect losses of external components, including a 0.8dB loss at fIF= 350MHz due to the 4:1 impedance trans-
former. Output measurements taken at the IF outputs of Typical Application Circuit.
Note 8:Guaranteed by design and characterization.
Note 9:100% production tested for functional performance.
Note 10:RF frequencies below 2400MHz require external RF tuning similar to components listed in Table 2.
Note 11:Maximum reliable continuous input power applied to the RF or IF port of this device is +12dBm from a 50Ωsource.
Note 12:Measured with external LO source noise filtered so the noise floor is -174dBm/Hz. This specification reflects the effects of
all SNR degradations in the mixer, including the LO noise as defined in Application Note 2021: Specifications and
Measurement of Local Oscillator Noise in Integrated Circuit Base Station Mixers.
MAX19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
Typical Operating Characteristics(Typical Application Circuit, standard RF band (see Table 1), VCC
= 5.0V, LO is high-side injectedfor a 350MHz IF, PLO= 0dBm,
PRF= -5dBm, TC= +25°C, unless otherwise noted.)
CONVERSION GAIN vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)MAX19997A toc01
RF FREQUENCY (MHz)
CONVERSION GAIN (dB)
TC = -30°C
TC = +25°C
TC = +85°C
CONVERSION GAIN vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)MAX19997A toc02
RF FREQUENCY (MHz)
CONVERSION GAIN (dB)
PLO = -3dBm, 0dBm, +3dBm
CONVERSION GAIN vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)MAX19997A toc03
RF FREQUENCY (MHz)
CONVERSION GAIN (dB)
VCC = 4.75V, 5.0V, 5.25V
INPUT IP3 vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)MAX19997A toc04
INPUT IP3 (dBm)
RF FREQUENCY (MHz)
TC = -30°C
PRF = -5dBm/TONE
TC = +25°C
TC = +85°C
INPUT IP3 vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)MAX19997A toc05
INPUT IP3 (dBm)
RF FREQUENCY (MHz)
PRF = -5dBm/TONE
PLO = -3dBm, 0dBm, +3dBm
INPUT IP3 vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)MAX19997A toc06
INPUT IP3 (dBm)
RF FREQUENCY (MHz)
PRF = -5dBm/TONE
VCC = 5.25V
VCC = 5.0V
VCC = 4.75V
NOISE FIGURE vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)MAX19997A toc07
NOISE FIGURE (dB)
TC = -30°C
TC = +25°C
TC = +85°C
NOISE FIGURE vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)MAX19997A toc08
NOISE FIGURE (dB)
PLO = -3dBm, 0dBm, +3dBm
NOISE FIGURE vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)MAX19997A toc09
NOISE FIGURE (dB)
VCC = 4.75V, 5.0V, 5.25V
MAX19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)(Typical Application Circuit, standard RF band (see Table 1), VCC
= 5.0V, LO is high-side injectedfor a 350MHz IF, PLO= 0dBm,
PRF= -5dBm, TC= +25°C, unless otherwise noted.)
2LO - 2RF RESPONSE vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)MAX19997A toc10
2LO - 2RF RESPONSE (dBc)
RF FREQUENCY (MHz)
TC = -30°C
PRF = -5dBm
TC = +25°C
TC = +85°C
2LO - 2RF RESPONSE vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)MAX19997A toc11
2LO - 2RF RESPONSE (dBc)
RF FREQUENCY (MHz)
PLO = +3dBm
PRF = -5dBm
PLO = 0dBm
PLO = -3dBm
2LO - 2RF RESPONSE vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)MAX19997A toc12
2LO - 2RF RESPONSE (dBc)
RF FREQUENCY (MHz)
VCC = 4.75V, 5.0V, 5.25V
PRF = -5dBm
3LO - 3RF RESPONSE vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)MAX19997A toc13
3LO - 3RF RESPONSE (dBc)65
RF FREQUENCY (MHz)
TC = -30°C
TC = +25°C, +85°C
PRF = -5dBm
3LO - 3RF RESPONSE vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)MAX19997A toc14
3LO - 3RF RESPONSE (dBc)65
RF FREQUENCY (MHz)
PLO = -3dBm, 0dBm, +3dBm
PRF = -5dBm
3LO - 3RF RESPONSE vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)MAX19997A toc15
3LO - 3RF RESPONSE (dBc)65
RF FREQUENCY (MHz)
VCC = 4.75V, 5.0V, 5.25V
PRF = -5dBm
INPUT P1dB vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)MAX19997A toc16
INPUT P
1dB
(dBm)
TC = -30°C
TC = +25°C
TC = +85°C
INPUT P1dB vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)MAX19997A toc17
INPUT P
1dB
(dBm)
PLO = -3dBm, 0dBm, +3dBm
INPUT P1dB vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)MAX19997A toc18
INPUT P
1dB
(dBm)
VCC = 4.75V
VCC = 5.25VVCC = 5.0V
MAX19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)(Typical Application Circuit, standard RF band (see Table 1), VCC
= 5.0V, LO is high-side injectedfor a 350MHz IF, PLO= 0dBm,
PRF= -5dBm, TC= +25°C, unless otherwise noted.)
CHANNEL ISOLATION vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)MAX19997A toc19
CHANNEL ISOLATION (dB)
RF FREQUENCY (MHz)
TC = -30°C, +25°C, +85°C
CHANNEL ISOLATION vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)MAX19997A toc20
CHANNEL ISOLATION (dB)
RF FREQUENCY (MHz)
PLO = -3dBm, 0dBm, +3dBm
CHANNEL ISOLATION vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)MAX19997A toc21
CHANNEL ISOLATION (dB)
RF FREQUENCY (MHz)
VCC = 4.75V, 5.0V, 5.25V
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
(LO > RF, STANDARD RF BAND)MAX19997A toc22
LO LEAKAGE AT IF PORT (dBm)-30
LO FREQUENCY (MHz)
TC = -30°C
TC = +25°C, +85°C
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
(LO > RF, STANDARD RF BAND)MAX19997A toc23
LO LEAKAGE AT IF PORT (dBm)-30
LO FREQUENCY (MHz)
PLO = -3dBm, 0dBm, +3dBm
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
(LO > RF, STANDARD RF BAND)MAX19997A toc24
LO LEAKAGE AT IF PORT (dBm)-30
LO FREQUENCY (MHz)
VCC = 4.75V, 5.0V, 5.25V
RF-TO-IF ISOLATION vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)MAX19997A toc25
RF-TO-IF ISOLATION (dB)
TC = -30°CTC = +25°C
TC = +85°C
RF-TO-IF ISOLATION vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)MAX19997A toc26
RF-TO-IF ISOLATION (dB)
PLO = -3dBm, 0dBm, +3dBm
RF-TO-IF ISOLATION vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)MAX19997A toc27
RF-TO-IF ISOLATION (dB)
VCC = 4.75V, 5.0V, 5.25V
MAX19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)(Typical Application Circuit, standard RF band (see Table 1), VCC
= 5.0V, LO is high-side injectedfor a 350MHz IF, PLO= 0dBm,
PRF= -5dBm, TC= +25°C, unless otherwise noted.)
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(LO > RF, STANDARD RF BAND)MAX19997A toc28
LO FREQUENCY (MHz)
LO LEAKAGE AT RF PORT (dBm)
TC = -30°C, +25°C, +85°C
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(LO > RF, STANDARD RF BAND)MAX19997A toc29
LO FREQUENCY (MHz)
LO LEAKAGE AT RF PORT (dBm)
PLO = -3dBm, 0dBm, +3dBm
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(LO > RF, STANDARD RF BAND)MAX19997A toc30
LO FREQUENCY (MHz)
LO LEAKAGE AT RF PORT (dBm)
VCC = 4.75V, 5.0V, 5.25V
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(LO > RF, STANDARD RF BAND)MAX19997A toc31
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT (dBm)
TC = -30°C, +25°C, +85°C
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(LO > RF, STANDARD RF BAND)MAX19997A toc32
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT (dBm)
PLO = -3dBm, 0dBm, +3dBm
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(LO > RF, STANDARD RF BAND)MAX19997A toc33
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT (dBm)
VCC = 4.75V, 5.0V, 5.25V
MAX19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)(Typical Application Circuit, standard RF band (see Table 1), VCC
= 5.0V, LO is high-side injectedfor a 350MHz IF, PLO= 0dBm,
PRF= -5dBm, TC= +25°C, unless otherwise noted.)
LO PORT RETURN LOSS vs. LO FREQUENCY
(LO > RF, STANDARD RF BAND)MAX19997A toc37
LO FREQUENCY (MHz)
LO PORT RETURN LOSS (dB)
PLO = +3dBm
PLO = 0dBmPLO = -3dBm
SUPPLY CURRENT vs. TEMPERATURE (TC)
(LO > RF, STANDARD RF BAND)MAX19997A toc38
TEMPERATURE (°C)
SUPPLY CURRENT (mA)45255-15
VCC = 5.25V
VCC = 5.0V
VCC = 4.75V
RF PORT RETURN LOSS vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)MAX19997A toc34
RF PORT RETURN LOSS (dB)
RF FREQUENCY (MHz)
PLO = -3dBm, 0dBm, +3dBm
fIF = 350MHz
IF PORT RETURN LOSS vs. IF FREQUENCY
(LO > RF, STANDARD RF BAND)MAX19997A toc35
IF FREQUENCY (MHz)
IF PORT RETURN LOSS (dB)
VCC = 4.75V, 5.0V, 5.25V
fLO = 2600MHz
IF PORT RETURN LOSS vs. IF FREQUENCY
(LO > RF, STANDARD RF BAND)MAX19997A toc36
IF FREQUENCY (MHz)
IF PORT RETURN LOSS (dB)
fLO = 2600MHzfLO = 2950MHz
fLO = 2350MHz
MAX19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)(Typical Application Circuit, extended RF band (see Table 2), VCC
= 5.0V, LO is high-side injectedfor a 350MHz IF, PLO= 0dBm,
PRF= -5dBm, TC= +25°C, unless otherwise noted.)
CONVERSION GAIN vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)MAX19997A toc39
RF FREQUENCY (MHz)
CONVERSION GAIN (dB)
TC = -30°C
TC = +25°CTC = +85°C
CONVERSION GAIN vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)MAX19997A toc40
RF FREQUENCY (MHz)
CONVERSION GAIN (dB)
PLO = -3dBm, 0dBm, +3dBm
CONVERSION GAIN vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)MAX19997A toc41
RF FREQUENCY (MHz)
CONVERSION GAIN (dB)
VCC = 4.75V, 5.0V, 5.25V
INPUT IP3 vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)MAX19997A toc42
RF FREQUENCY (MHz)
INPUT IP3 (dBm)
TC = -30°C
PRF = -5dBm/TONE
TC = +25°C
TC = +85°C
INPUT IP3 vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)MAX19997A toc43
RF FREQUENCY (MHz)
INPUT IP3 (dBm)
PRF = -5dBm/TONE
PLO = -3dBm, 0dBm, +3dBm
INPUT IP3 vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)MAX19997A toc44
RF FREQUENCY (MHz)
INPUT IP3 (dBm)
PRF = -5dBm/TONE
VCC = 4.75V
VCC = 5.25V
VCC = 5.0V
NOISE FIGURE vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)MAX19997A toc45
NOISE FIGURE (dB)
TC = -30°C
TC = +25°C
TC = +85°C
NOISE FIGURE vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)MAX19997A toc46
NOISE FIGURE (dB)
PLO = -3dBm, 0dBm, +3dBm
NOISE FIGURE vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)MAX19997A toc47
NOISE FIGURE (dB)
VCC = 4.75V, 5.0V, 5.25V
MAX19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
2LO - 2RF RESPONSE vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)MAX19997A toc49
RF FREQUENCY (MHz)
2LO - 2RF RESPONSE (dBc)
PRF = -5dBm
PLO = -3dBm, 0dBm, +3dBm
3LO - 3RF RESPONSE vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)MAX19997A toc51
RF FREQUENCY (MHz)
3LO - 3RF RESPONSE (dBc)
PRF = -5dBm
TC = -30°C
TC = +25°C, +85°C
Typical Operating Characteristics (continued)(Typical Application Circuit, extended RF band (see Table 2), VCC
= 5.0V, LO is high-side injectedfor a 350MHz IF, PLO= 0dBm,
PRF= -5dBm, TC= +25°C, unless otherwise noted.)
INPUT P1dB vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)MAX19997A toc55
INPUT P
1dB
(dBm)
PLO = -3dBm, 0dBm, +3dBm
INPUT P1dB vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)MAX19997A toc56
INPUT P
1dB
(dBm)
VCC = 4.75V
VCC = 5.0VVCC = 5.25V
2LO - 2RF RESPONSE vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)MAX19997A toc48
RF FREQUENCY (MHz)
2LO - 2RF RESPONSE (dBc)
TC = -30°C
TC = +25°C
TC = +85°CPRF = -5dBm
2LO - 2RF RESPONSE vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)MAX19997A toc50
RF FREQUENCY (MHz)
2LO - 2RF RESPONSE (dBc)
PRF = -5dBm
VCC = 4.75V, 5.0V, 5.25V
3LO - 3RF RESPONSE vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)MAX19997A toc52
RF FREQUENCY (MHz)
3LO - 3RF RESPONSE (dBc)
PRF = -5dBm
PLO = -3dBm, 0dBm, +3dBm
3LO - 3RF RESPONSE vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)MAX19997A toc53
RF FREQUENCY (MHz)
3LO - 3RF RESPONSE (dBc)
PRF = -5dBm
VCC = 4.75V, 5.0V, 5.25V
INPUT P1dB vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)MAX19997A toc54
INPUT P
1dB
(dBm)
TC = -30°CTC = +25°C
TC = +85°C
MAX19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
RF-TO-IF ISOLATION vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)MAX19997A toc65
RF-TO-IF ISOLATION (dB)
VCC = 4.75V, 5.0V, 5.25V
Typical Operating Characteristics (continued)(Typical Application Circuit, extended RF band (see Table 2), VCC
= 5.0V, LO is high-side injectedfor a 350MHz IF, PLO= 0dBm,
PRF= -5dBm, TC= +25°C, unless otherwise noted.)
RF-TO-IF ISOLATION vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)MAX19997A toc63
RF-TO-IF ISOLATION (dB)
TC = -30°CTC = +25°C
TC = +85°C
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
(LO > RF, EXTENDED RF BAND)MAX19997A toc62
LO FREQUENCY (MHz)
LO LEAKAGE AT IF PORT (dBm)
VCC = 4.75V, 5.0V, 5.25V
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
(LO > RF, EXTENDED RF BAND)MAX19997A toc61
LO FREQUENCY (MHz)
LO LEAKAGE AT IF PORT (dBm)
PLO = -3dBm, 0dBm, +3dBm
CHANNEL ISOLATION vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)MAX19997A toc58
RF FREQUENCY (MHz)
CHANNEL ISOLATION (dB)
PLO = -3dBm, 0dBm, +3dBm
CHANNEL ISOLATION vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)MAX19997A toc59
RF FREQUENCY (MHz)
CHANNEL ISOLATION (dB)
VCC = 4.75V, 5.0V, 5.25V
CHANNEL ISOLATION vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)MAX19997A toc57
RF FREQUENCY (MHz)
CHANNEL ISOLATION (dB)
TC = -30°C, +25°C, +85°C
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
(LO > RF, EXTENDED RF BAND)MAX19997A toc60
LO FREQUENCY (MHz)
LO LEAKAGE AT IF PORT (dBm)
TC = -30°C, +25°C, +85°C
RF-TO-IF ISOLATION vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)MAX19997A toc64
RF-TO-IF ISOLATION (dB)
PLO = -3dBm, 0dBm, +3dBm
MAX19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)(Typical Application Circuit, extended RF band (see Table 2), VCC
= 5.0V, LO is high-side injectedfor a 350MHz IF, PLO= 0dBm,
PRF= -5dBm, TC= +25°C, unless otherwise noted.)
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(LO > RF, EXTENDED RF BAND)MAX19997A toc68
LO LEAKAGE AT RF PORT (dBm)
LO FREQUENCY (MHz)
VCC = 4.75V, 5.0V, 5.25V
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(LO > RF, EXTENDED RF BAND)MAX19997A toc66
LO LEAKAGE AT RF PORT (dBm)
LO FREQUENCY (MHz)
TC = -30°C, +25°C, +85°C
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(LO > RF, EXTENDED RF BAND)MAX19997A toc67
LO LEAKAGE AT RF PORT (dBm)
LO FREQUENCY (MHz)
PLO = -3dBm, 0dBm, +3dBm
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(LO > RF, EXTENDED RF BAND)MAX19997A toc69
2LO LEAKAGE AT RF PORT (dBm)
LO FREQUENCY (MHz)
TC = -30°C, +25°C, +85°C
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(LO > RF, EXTENDED RF BAND)MAX19997A toc70
2LO LEAKAGE AT RF PORT (dBm)
LO FREQUENCY (MHz)
PLO = -3dBm, 0dBm, +3dBm
2LO LEAKAGE AT RF PORT vs. LO FREQUENCY
(LO > RF, EXTENDED RF BAND)MAX19997A toc71
2LO LEAKAGE AT RF PORT (dBm)
LO FREQUENCY (MHz)
VCC = 4.75V, 5.0V, 5.25V
MAX19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)(Typical Application Circuit, extended RF band (see Table 2), VCC
= 5.0V, LO is high-side injectedfor a 350MHz IF, PLO= 0dBm,
PRF= -5dBm, TC= +25°C, unless otherwise noted.)
RF PORT RETURN LOSS vs. RF FREQUENCY
(LO > RF, EXTENDED RF BAND)MAX19997A toc72
RF PORT RETURN LOSS (dB)
RF FREQUENCY (MHz)
PLO = -3dBm, 0dBm, +3dBm
fIF = 350MHz
IF PORT RETURN LOSS vs. IF FREQUENCY
(LO > RF, EXTENDED RF BAND)MAX19997A toc73
IF PORT RETURN LOSS (dB)
IF FREQUENCY (MHz)
fLO = 2600MHz
VCC = 4.75V, 5.0V, 5.25V
IF PORT RETURN LOSS vs. IF FREQUENCY
(LO > RF, EXTENDED RF BAND)MAX19997A toc74
IF PORT RETURN LOSS (dB)
IF FREQUENCY (MHz)
fLO = 2600MHz
fLO = 2950MHz
fLO = 2350MHz
LO PORT RETURN LOSS vs. LO FREQUENCY
(LO > RF, EXTENDED RF BAND)MAX19997A toc75
LO PORT RETURN LOSS (dB)
LO FREQUENCY (MHz)
PLO = -3dBmPLO = 0dBm
PLO = +3dBm
SUPPLY CURRENT vs. TEMPERATURE (TC)
(LO > RF, EXTENDED RF BAND)MAX19997A toc76
SUPPLY CURRENT (mA)65255-15
TEMPERATURE (°C)
VCC = 4.75V
VCC = 5.0V
VCC = 5.25V
