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MAX5035AASA+ ,1A, 76V, High-Efficiency MAXPower Step-Down DC-DC ConverterEVALUATION KIT AVAILABLEMAX50351A, 76V, High-Efficiency MAXPower Step-Down DC-DC Converter
MAX19995AETX+T
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch
General DescriptionThe MAX19995A dual-channel downconverter is
designed to provide 8.7dB of conversion gain,
+24.8dBm input IP3, +13.5dBm 1dB input compression
point, and a noise figure of 9.2dB for 1700MHz to
2200MHz diversity receiver applications. With an opti-
mized LO frequency range of 1750MHz to 2700MHz, this
mixer is ideal for high-side LO injection architectures.
Low-side LO injection is supported by the MAX19995,
which is pin-pin and functionally compatible with the
MAX19995A.
In addition to offering excellent linearity and noise per-
formance, the MAX19995A also yields a high level of
component integration. This device includes two double-
balanced passive mixer cores, two LO buffers, a dual-
input LO selectable switch, and a pair of differential IF
output amplifiers. Integrated on-chip baluns allow for sin-
gle-ended RF and LO inputs. The MAX19995A requires a
nominal LO drive of 0dBm and a typical supply current of
350mA at VCC= 5.0V, or 242mA at VCC= 3.3V.
The MAX19995/MAX19995A are pin compatible with the
MAX19985/MAX19985A series of 700MHz to 1000MHz
mixers and pin similar to the MAX19997A/MAX19999
series of 1800MHz to 4000MHz mixers, making this
entire family of downconverters ideal for applications
where a common PCB layout is used across multiple
frequency bands.
The MAX19995A is available in a 6mm x 6mm, 36-pin
thin QFN package with an exposed pad. Electrical per-
formance is guaranteed over the extended temperature
range (TC= -40°C to +85°C).
ApplicationsUMTS/WCDMA Base Stations
LTE/WiMAX™Base Stations
TD-SCDMA Base Stations
DCS1800/PCS1900 and GSM/EDGE Base
Stations
cdma2000®Base Stations
Fixed Broadband Wireless Access
Wireless Local Loop
Private Mobile Radios
Military Systems
Features1700MHz to 2200MHz RF Frequency Range1750MHz to 2700MHz LO Frequency Range50MHz to 500MHz IF Frequency Range8.7dB Typical Conversion Gain9.2dB Typical Noise Figure+24.8dBm Typical Input IP3+13.5dBm Typical Input 1dB Compression Point64dBc Typical 2LO-2RF Spurious Rejection at
PRF= -10dBmDual Channels Ideal for Diversity Receiver
Applications48dB Typical Channel-to-Channel IsolationLow -3dBm to +3dBm LO DriveIntegrated LO BufferInternal RF and LO Baluns for Single-Ended
InputsBuilt-In SPDT LO Switch with 48dB LO-to-LO
Isolation and 50ns Switching TimePin Compatible with the MAX19985/MAX19985A/
MAX19995 Series of 700MHz to 2200MHz MixersPin Similar to the MAX19997A/MAX19999 Series
of 1800MHz to 4000MHz MixersSingle 5.0V or 3.3V SupplyExternal Current-Setting Resistors Provide Option
for Operating Device in Reduced-Power/Reduced-
Performance Mode
MAX19995A
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
Ordering Information19-4419; Rev 0; 1/09
+Denotes a lead(Pb)-free/RoHS-compliant package.
*EP = Exposed pad.
T = Tape and reel.
WiMAX is a trademark of WiMAX Forum.
cdma2000 is a registered trademark of Telecommunications
PARTTEMP RANGEPIN-PACKAGEMAX19995AETX+-40°C to +85°C36 Thin QFN-EP*
MAX19995AETX+T-40°C to +85°C36 Thin QFN-EP*
Pin Configuration/Functional Diagram appears at end of
MAX19995A
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
ABSOLUTE MAXIMUM RATINGS
5.0V SUPPLY DC ELECTRICAL CHARACTERISTICS(Typical Application Circuit, VCC= 4.75V to 5.25V, no input AC signals. TC= -40°C to +85°C, R1 = R4 = 681Ω, R2 = R5 = 1.5kΩ.
Typical values are at VCC= 5.0V, TC= +25°C, unless otherwise noted. All parameters are production tested.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Note 1:Based on junction temperature TJ= TC+ (θJCx VCCx ICC). This formula can be used when the temperature of the exposed
pad is known while the device is soldered down to a PCB. See the Applications Informationsection for details. The junction
temperature must not exceed +150°C.
Note 2:Junction temperature TJ= TA+ (θJAx VCCx ICC). This formula can be used when the ambient temperature of the PCB is
known. The junction temperature must not exceed +150°C.
Note 3:Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to /thermal-tutorial.
Note 4:TCis the temperature on the exposed pad of the package. TAis the ambient temperature of the device and PCB.
VCCto GND...........................................................-0.3V to +5.5V
LO1, LO2 to GND..................................................-0.3V to +0.3V
LOSEL to GND...........................................-0.3V to (VCC+ 0.3V)
RFMAIN, RFDIV, and LO_ Input Power..........................+15dBm
RFMAIN, RFDIV Current (RF is DC shorted to GND
through a balun)..............................................................50mA
Continuous Power Dissipation (Note 1)...............................8.7W
θJA(Notes 2, 3)..............................................................+38°C/W
θJC(Notes 1, 3)...............................................................7.4°C/W
Operating Case Temperature Range (Note 4)....-40°C to +85°C
Junction Temperature......................................................+150°C
Storage Temperature Range.............................-65°C to +150°C
Lead Temperature (soldering, 10s).................................+300°C
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITSSupply VoltageVCC4.7555.25V
Supply CurrentICCTotal supply current, VCC = 5.0V350410mA
LOSEL Input High VoltageVIH2V
LOSEL Input Low VoltageVIL0.8V
LOSEL Input CurrentIIH and IIL-10+10µA
3.3V SUPPLY DC ELECTRICAL CHARACTERISTICS(Typical Application Circuit, VCC= 3.0V to 3.6V, no input AC signals. TC= -40°C to +85°C, R1 = R4 = 909Ω, R2 = R5 = 1kΩ. Typical
values are at VCC= 3.3V, TC= +25°C, unless otherwise noted. Parameters are guaranteed by design and not production tested.)
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITSSupply VoltageVCC3.03.33.6V
Supply CurrentICCTotal supply current242300mA
LOSEL Input High VoltageVIH2V
LOSEL Input Low VoltageVIL0.8V
MAX19995A
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
RECOMMENDED AC OPERATING CONDITIONS
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITSRF FrequencyfRF(Note 5)17002200MHz
LO FrequencyfLO(Note 5)17502700MHzsi ng M i ni - C i r cui ts TC 4- 1W- 17 4:1
tr ansfor m er as d efi ned i n the Typ i cal
Ap p l i cati on C i r cui t, IF m atchi ng com p onents
affect the IF fr eq uency r ang e ( N ote 5)
IF FrequencyfIFsi ng al ter nati ve M i ni - C i r cui ts TC 4- 1W- 7A
4:1 tr ansfor m er as d efi ned i n the Typ i cal
Ap p l i cati on C i r cui t, IF m atchi ng com p onents
affect the IF fr eq uency r ang e ( N ote 5) 250
MHz
LO Drive LevelPLO-3+3dBm
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITSTC = +25°C (Note 7)7.18.79.9Conversion GainGC
TC = +25°C, fRF = 1850MHz (Note 8)7.78.79.7
Flatness over any one of three frequency
bands:
fRF = 1710MHz to 1785MHz
+0.07
fRF = 1850MHz to 1910MHz-0.03
Conversion Gain FlatnessΔGC
fRF = 1920MHz to 1980MHz-0.13
Gain Variation Over TemperatureTCCG
fRF = 1700MHz to 2000MHz,
fLO = 2050MHz to 2350MHz,
TC = -40°C to +85°C
-0.011dB/°C
Input Compression PointIP1dBfRF = 1850MHz (Notes 7, 9)9.513.5dBm
fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone21.524.8
Input Third-Order Intercept PointIIP3fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone,
TC = +25°C2224.8dBm
Input Third-Order Intercept Point
Variation Over TemperatureTCIIP3fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone,
TC = -40°C to +85°C0.006dBm/°C
Single sideband, no blockers present9.211.1
Noise Figure (Note 10)NFSSBfRF = 1850M H z, fLO = 2200M H z, TC = + 25° C ,
PLO = 0dBm, single sideband, no blockers
present
9.29.8dB
Noise Figure Temperature
CoefficientTCNFSingle sideband, no blockers present,
TC = -40°C to +85°C0.016dB/°C
5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS(Typical Application Circuit, R1 = R4 = 681Ω, R2 = R5 = 1.5kΩ, VCC= 4.75V to 5.25V, RF and LO ports are driven from 50Ωsources,
PLO= -3dBm to +3dBm, PRF= -5dBm, fRF= 1700MHz to 2000MHz, fLO= 2050MHz to 2350MHz, fIF= 350MHz, fRF< fLO, TC= -40°C
to +85°C. Typical values are at VCC= 5.0V, PRF= -5dBm, PLO= 0dBm, fRF= 1850MHz, fLO= 2200MHz, fIF= 350MHz, TC= +25°C.
All parameters are guaranteed by design and characterization, unless otherwise noted.) (Note 6)
MAX19995A
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITSNoise Figure with BlockerNFB
PBLOCKER = +8dBm, fRF = 1850MHz,
fLO = 2200MHz, fBLOCKER = 1725MHz,
PLO = 0dBm, VCC = 5.0V, TC = +25°C
(Notes 10, 11)
19.723.4dB
PRF = -10dBm5464fRF = 1850MHz,
fLO = 2200MHz,
fSPUR = 2025MHzPRF = -5dBm4959
PRF = -10dBm5764
2LO-2RF Spur Rejection
(Note 10)2 x 2fRF = 1850MHz,
fLO = 2200MHz,
fSPUR = 2025MHz,
PLO = 0dBm, VCC = 5.0V,
TC = +25°CPRF = -5dBm5259
dBc
PRF = -10dBm7080fRF = 1850MHz,
fLO = 2200MHz,
fSPUR = 2083.33MHzPRF = -5dBm6070
PRF = -10dBm7180
3LO-3RF Spur Rejection
(Note 10)3 x 3fRF = 1850MHz,
fLO = 2200MHz,
fSPUR = 2083.33MHz,
PLO = 0dBm, VCC = 5.0V,
TC = +25°CPRF = -5dBm6170
dBc
RF Input Return LossLO and IF terminated into matched
impedance, LO on21dB
LO port selected, RF and IF terminated into
matched impedance20
LO Input Return LossLO port unselected, RF and IF terminated
into matched impedance22
IF Output ImpedanceZIFNominal differential impedance of the IF
outputs200Ω
IF Output Return Loss
RF terminated into 50Ω, LO driven by 50Ω
source, IF transformed to 50Ω using
external components shown in the Typical
Application Circuit
11.5dB
RF-to-IF Isolation(Note 8)3135dB
LO Leakage at RF Port(Note 8)-35-25dBm
2LO Leakage at RF Port(Note 8)-17.5-14dBm
LO Leakage at IF Port(Note 8)-32-22dBm
5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued)(Typical Application Circuit, R1 = R4 = 681Ω, R2 = R5 = 1.5kΩ, VCC= 4.75V to 5.25V, RF and LO ports are driven from 50Ωsources,
PLO= -3dBm to +3dBm, PRF= -5dBm, fRF= 1700MHz to 2000MHz, fLO= 2050MHz to 2350MHz, fIF= 350MHz, fRF< fLO, TC= -40°C
to +85°C. Typical values are at VCC= 5.0V, PRF= -5dBm, PLO= 0dBm, fRF= 1850MHz, fLO= 2200MHz, fIF= 350MHz, TC= +25°C.
All parameters are guaranteed by design and characterization, unless otherwise noted.) (Note 6)
MAX19995A
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS(Typical Application Circuit, R1 = R4 = 909Ω, R2 = R5 = 1kΩ. Typical values are at VCC= 3.3V, PRF= -5dBm, PLO= 0dBm,
fRF= 1850MHz, fLO= 2200MHz, fIF= 350MHz, TC= +25°C, unless otherwise noted.) (Note 6)
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITSConversion GainGC(Note 8)8.4dB
Flatness over any one of three frequency
bands:
fRF = 1710MHz to 1785MHz
+0.07
fRF = 1850MHz to 1910MHz-0.03
Conversion Gain FlatnessΔGC
fRF = 1920MHz to 1980MHz-0.13
Gain Variation Over TemperatureTCCGTC = -40°C to +85°C-0.013dB/°C
Input Compression PointIP1dB(Note 9)10.2dBm
Input Third-Order Intercept PointIIP3fRF1 - fRF2 = 1MHz22.5dBm
Input Third-Order Intercept Point
Variation Over TemperatureTCIIP3fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone,
TC = -40°C to +85°C0.0017dBm/°C
Noise FigureNFSSBSingle sideband, no blockers present9dB
Noise Figure Temperature
CoefficientTCNFSingle sideband, no blockers present,
TC = -40°C to +85°C0.016dB/°C
PRF = -10dBm652LO-2RF Spur Rejection2 x 2PRF = -5dBm60dBc
PRF = -10dBm773LO-3RF Spur Rejection3 x 3PRF = -5dBm67dBc
RF Input Return LossLO and IF terminated into matched
impedance, LO on25dB
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITSRFMAIN converted power measured at
IFDIV relative to IFMAIN, all unused ports
terminated to 50Ω48
Channel Isolation (Note 7)RFDIV converted power measured at
IFMAIN relative to IFDIV, all unused ports
terminated to 50Ω48
LO-to-LO IsolationPLO1 = +3dBm, PLO2 = +3dBm,
fLO1 = 2200MHz, fLO2 = 2201MHz (Note 7)4048dB
LO Switching Time50% of LOSEL to IF settled within
2 degrees50ns
5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued)(Typical Application Circuit, R1 = R4 = 681Ω, R2 = R5 = 1.5kΩ, VCC= 4.75V to 5.25V, RF and LO ports are driven from 50Ωsources,
PLO= -3dBm to +3dBm, PRF= -5dBm, fRF= 1700MHz to 2000MHz, fLO= 2050MHz to 2350MHz, fIF= 350MHz, fRF< fLO, TC= -40°C
to +85°C. Typical values are at VCC= 5.0V, PRF= -5dBm, PLO= 0dBm, fRF= 1850MHz, fLO= 2200MHz, fIF= 350MHz, TC= +25°C.
All parameters are guaranteed by design and characterization, unless otherwise noted.) (Note 6)
MAX19995A
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued)(Typical Application Circuit, R1 = R4 = 909Ω, R2 = R5 = 1kΩ. Typical values are at VCC= 3.3V, PRF= -5dBm, PLO= 0dBm,
fRF= 1850MHz, fLO= 2200MHz, fIF= 350MHz, TC= +25°C, unless otherwise noted.) (Note 6)
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITSLO port selected, RF and IF terminated into
matched impedance22
LO Input Return LossLO port unselected, RF and IF terminated
into matched impedance16
IF Output Return Loss
RF terminated into 50Ω, LO driven by 50Ω
source, IF transformed to 50Ω using
external components shown in the Typical
Application Circuit
11.5dB
RF-to-IF Isolation36dB
LO Leakage at RF Port-40dBm
2LO Leakage at RF Port-23dBm
LO Leakage at IF Port-37dBm
RFMAIN converted power measured at
IFDIV relative to IFMAIN, all unused ports
terminated to 50Ω
Channel IsolationRFDIV converted power measured at
IFMAIN relative to IFDIV, all unused ports
terminated to 50Ω
LO-to-LO IsolationPLO1 = +3dBm, PLO2 = +3dBm,
fLO1 = 2200MHz, fLO2 = 2201MHz47dB
LO Switching Time50% of LOSEL to IF settled within 2 degrees50ns
Note 5:Not production tested. Operation outside this range is possible, but with degraded performance of some parameters.
See the Typical Operating Characteristics.
Note 6:All limits reflect losses of external components, including a 0.9dB loss at fIF= 350MHz due to the 4:1 transformer. Output
measurements were taken at IF outputs of the Typical Application Circuit.
Note 7:100% production tested.
Note 8:100% production tested for functionality.
Note 9:Maximum reliable continuous input power applied to the RF or IF port of this device is +12dBm from a 50Ωsource.
Note 10:Not production tested.
Note 11:Measured with external LO source noise filtered so the noise floor is -174dBm/Hz. This specification reflects the effects of
all SNR degradations in the mixer, including the LO noise as defined in Application Note 2021: Specifications and
Measurement of Local Oscillator Noise in Integrated Circuit Base Station Mixers.
MAX19995A
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
CONVERSION GAIN vs. RF FREQUENCYMAX19995A toc01
RF FREQUENCY (MHz)
CONVERSION GAIN (dB)
TC = -30°C
TC = +25°C
TC = +85°C
CONVERSION GAIN vs. RF FREQUENCYMAX19995A toc02
RF FREQUENCY (MHz)
CONVERSION GAIN (dB)
PLO = -3dBm, 0dBm, +3dBm
CONVERSION GAIN vs. RF FREQUENCYMAX19995A toc03
RF FREQUENCY (MHz)
CONVERSION GAIN (dB)
VCC = 4.75V, 5.0V, 5.25V
INPUT IP3 vs. RF FREQUENCYMAX19995A toc04
RF FREQUENCY (MHz)
INPUT IP3 (dBm)
TC = +85°CPRF = -5dBm/TONE
TC = +25°C
TC = -30°C
INPUT IP3 vs. RF FREQUENCYMAX19995A toc05
RF FREQUENCY (MHz)
INPUT IP3 (dBm)
PLO = 0dBmPLO = -3dBm
PLO = +3dBmPRF = -5dBm/TONE
INPUT IP3 vs. RF FREQUENCYMAX19995A toc06
RF FREQUENCY (MHz)
INPUT IP3 (dBm)
PRF = -5dBm/TONE
VCC = 4.75V
VCC = 5.25V
VCC = 5.0V
NOISE FIGURE vs. RF FREQUENCYMAX19995A toc07
RF FREQUENCY (MHz)
NOISE FIGURE (dB)
TC = -30°C
TC = +25°C
TC = +85°C
NOISE FIGURE vs. RF FREQUENCYMAX19995A toc08
RF FREQUENCY (MHz)
NOISE FIGURE (dB)
PLO = -3dBm, 0dBm, +3dBm
NOISE FIGURE vs. RF FREQUENCYMAX19995A toc09
RF FREQUENCY (MHz)
NOISE FIGURE (dB)
VCC = 4.75V, 5.0V, 5.25V
Typical Operating Characteristics(Typical Application Circuit, R1 = R4 = 681Ω, R2 = R5 = 1.5kΩ, VCC
= 5.0V, PRF= -5dBm, PLO= 0dBm, fRF= 1850MHz,
fLO= 2200MHz, fIF= 350MHz, TC= +25°C, unless otherwise noted.)
MAX19995A
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switchypical Operating Characteristics (continued)(Typical Application Circuit, R1 = R4 = 681Ω, R2 = R5 = 1.5kΩ, VCC
= 5.0V, PRF= -5dBm, PLO= 0dBm, fRF= 1850MHz,
fLO= 2200MHz, fIF= 350MHz, TC= +25°C, unless otherwise noted.)
2LO-2RF RESPONSE vs. RF FREQUENCYMAX19995A toc10
RF FREQUENCY (MHz)
2LO-2RF RESPONSE (dBc)
TC = -30°CTC = +25°C
TC = +85°C
PRF = -5dBm
2LO-2RF RESPONSE vs. RF FREQUENCYMAX19995A toc11
RF FREQUENCY (MHz)
2LO-2RF RESPONSE (dBc)
PRF = -5dBm
PLO = 0dBmPLO = -3dBm
PLO = +3dBm
2LO-2RF RESPONSE vs. RF FREQUENCYMAX19995A toc12
RF FREQUENCY (MHz)
2LO-2RF RESPONSE (dBc)
PRF = -5dBm
VCC = 4.75V, 5.0V, 5.25V
3LO-3RF RESPONSE vs. RF FREQUENCYMAX19995A toc13
RF FREQUENCY (MHz)
3LO-3RF RESPONSE (dBc)
TC = -30°CTC = +25°C
TC = +85°C
PRF = -5dBm
3LO-3RF RESPONSE vs. RF FREQUENCYMAX19995A toc14
RF FREQUENCY (MHz)
3LO-3RF RESPONSE (dBc)
PRF = -5dBm
PLO = -3dBm, 0dBm, +3dBm
3LO-3RF RESPONSE vs. RF FREQUENCYMAX19995A toc15
RF FREQUENCY (MHz)
3LO-3RF RESPONSE (dBc)
PRF = -5dBm
VCC = 4.75V
VCC = 5.25V
VCC = 5.0V
INPUT P1dB vs. RF FREQUENCYMAX19995A toc16
RF FREQUENCY (MHz)
INPUT P
1dB
(dBm)
TC = -30°C
TC = +25°C
TC = +85°C
INPUT P1dB vs. RF FREQUENCYMAX19995A toc17
RF FREQUENCY (MHz)
INPUT P
1dB
(dBm)
PLO = -3dBm, 0dBm, +3dBm
INPUT P1dB vs. RF FREQUENCYMAX19995A toc18
RF FREQUENCY (MHz)
INPUT P
1dB
(dBm)
VCC = 4.75V
VCC = 5.25VVCC = 5.0V
MAX19995A
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
CHANNEL ISOLATION vs. RF FREQUENCYMAX19995A toc19
RF FREQUENCY (MHz)
CHANNEL ISOLATION (dB)
TC = -30°C, +25°C, +85°C
CHANNEL ISOLATION vs. RF FREQUENCYMAX19995A toc20
RF FREQUENCY (MHz)
CHANNEL ISOLATION (dB)
PLO = -3dBm, 0dBm, +3dBm
CHANNEL ISOLATION vs. RF FREQUENCYRF FREQUENCY (MHz)
CHANNEL ISOLATION (dB)
VCC = 4.75V, 5.0V, 5.25V
MAX19995A toc21
LO LEAKAGE AT IF PORT
vs. LO FREQUENCYLO FREQUENCY (MHz)
LO LEAKAGE AT IF PORT (dBm)
MAX19995A toc22
TC = -30°CTC = +25°C
TC = +85°C
LO LEAKAGE AT IF PORT
vs. LO FREQUENCYLO FREQUENCY (MHz)
LO LEAKAGE AT IF PORT (dBm)
MAX19995A toc23PLO = -3dBm, 0dBm, +3dBm
LO LEAKAGE AT IF PORT
vs. LO FREQUENCYLO FREQUENCY (MHz)
LO LEAKAGE AT IF PORT (dBm)
MAX19995A toc24
VCC = 4.75V
VCC = 5.25VVCC = 5.0V
RF-TO-IF ISOLATION
vs. RF FREQUENCYRF FREQUENCY (MHz)
RF-TO-IF ISOLATION (dB)
MAX19995A toc25
TC = -30°C
TC = +25°C
TC = +85°C
RF-TO-IF ISOLATION
vs. RF FREQUENCYRF FREQUENCY (MHz)
RF-TO-IF ISOLATION (dB)
PLO = -3dBm, 0dBm, +3dBm
MAX19995A toc26
RF-TO-IF ISOLATION
vs. RF FREQUENCYRF FREQUENCY (MHz)
RF-TO-IF ISOLATION (dB)
MAX19995A toc27
VCC = 4.75V, 5.0V, 5.25V
ypical Operating Characteristics (continued)(Typical Application Circuit, R1 = R4 = 681Ω, R2 = R5 = 1.5kΩ, VCC
= 5.0V, PRF= -5dBm, PLO= 0dBm, fRF= 1850MHz,
fLO= 2200MHz, fIF= 350MHz, TC= +25°C, unless otherwise noted.)
MAX19995A
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
LO LEAKAGE AT RF PORT
vs. LO FREQUENCYLO FREQUENCY (MHz)
LO LEAKAGE AT RF PORT (dBm)
MAX19995A toc28
TC = -30°CTC = +25°C
TC = +85°C
LO LEAKAGE AT RF PORT
vs. LO FREQUENCYLO FREQUENCY (MHz)
LO LEAKAGE AT RF PORT (dBm)
MAX19995A toc29
PLO = 0dBm
PLO = -3dBm
PLO = +3dBm
LO LEAKAGE AT RF PORT
vs. LO FREQUENCYLO FREQUENCY (MHz)
LO LEAKAGE AT RF PORT (dBm)
MAX19995A toc30
VCC = 4.75V, 5.0V, 5.25V
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCYLO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT (dBm)
MAX19995A toc31TC = -30°C
TC = +25°C
TC = +85°C
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCYLO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT (dBm)
MAX19995A toc32
PLO = 0dBm
PLO = -3dBm
PLO = +3dBm
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCYLO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT (dBm)
MAX19995A toc33
VCC = 4.75V, 5.0V, 5.25V
LO SWITCH ISOLATION
vs. LO FREQUENCYLO FREQUENCY (MHz)
LO SWITCH ISOLATION (dB)
MAX19995A toc34
TC = -30°C
TC = +25°C
TC = +85°C
LO SWITCH ISOLATION
vs. LO FREQUENCYLO FREQUENCY (MHz)
LO SWITCH ISOLATION (dB)
MAX19995A toc35
PLO = -3dBm, 0dBm, +3dBm
LO SWITCH ISOLATION
vs. LO FREQUENCYLO FREQUENCY (MHz)
LO SWITCH ISOLATION (dB)
MAX19995A toc36
VCC = 4.75V, 5.0V, 5.25V
ypical Operating Characteristics (continued)(Typical Application Circuit, R1 = R4 = 681Ω, R2 = R5 = 1.5kΩ, VCC
= 5.0V, PRF= -5dBm, PLO= 0dBm, fRF= 1850MHz,
fLO= 2200MHz, fIF= 350MHz, TC= +25°C, unless otherwise noted.)
MAX19995A
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
RF PORT RETURN LOSS
vs. RF FREQUENCYRF FREQUENCY (MHz)
RF PORT RETURN LOSS (dB)
MAX19995A toc37
PLO = -3dBm, 0dBm, +3dBm
fIF = 350MHz
IF PORT RETURN LOSS
vs. IF FREQUENCYIF FREQUENCY (MHz)
IF PORT RETURN LOSS (dB)
MAX19995A toc38L = 120nH
L = 330nH
L = 470nH
L = L1, L2, L4, L5fLO = 2300MHz
VCC = 4.75V, 5.0V, 5.25V
LO SELECTED RETURN LOSS
vs. LO FREQUENCYLO FREQUENCY (MHz)
LO SELECTED RETURN LOSS (dB)
MAX19995A toc39PLO = -3dBm, 0dBm, +3dBm
LO UNSELECTED RETURN LOSS
vs. LO FREQUENCYLO FREQUENCY (MHz)
LO UNSELECTED RETURN LOSS (dB)
MAX19995A toc40
PLO = -3dBm, 0dBm, +3dBm
SUPPLY CURRENT vs. TEMPERATURE (TC)TEMPERATURE (°C)
SUPPLY CURRENT (mA)8525455-15
MAX19995A toc41
VCC = 4.75V
VCC = 5.25V
VCC = 5.0V
CONVERSION GAIN vs. RF FREQUENCY
(VARIOUS VALUES OF L3 AND L6)RF FREQUENCY (MHz)
CONVERSION GAIN (dB)
MAX19995A toc42
0Ω, 3.6nH, 6.8nH, 10nH
INPUT IP3 vs. RF FREQUENCY
(VARIOUS VALUES OF L3 AND L6)RF FREQUENCY (MHz)
INPUT IP3 (dBm)
MAX19995A toc43
0Ω, 3.6nH, 6.8nH, 10nH
PRF = -5dBm/TONE
2LO-2RF RESPONSE vs. RF FREQUENCY
(VARIOUS VALUES OF L3 AND L6)RF FREQUENCY (MHz)
2LO-2RF RESPONSE (dBc)
MAX19995A toc440Ω
3.6nH6.8nH, 10nH
PRF = -5dBm
3LO-3RF RESPONSE vs. RF FREQUENCY
(VARIOUS VALUES OF L3 AND L6)RF FREQUENCY (MHz)
3LO-3RF RESPONSE (dBc)
MAX19995A toc45
0Ω, 3.6nH, 6.8nH, 10nH
PRF = -5dBm
ypical Operating Characteristics (continued)(Typical Application Circuit, R1 = R4 = 681Ω, R2 = R5 = 1.5kΩ, VCC
= 5.0V, PRF= -5dBm, PLO= 0dBm, fRF= 1850MHz,
fLO= 2200MHz, fIF= 350MHz, TC= +25°C, unless otherwise noted.)
MAX19995A
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
CHANNEL ISOLATION vs. RF FREQUENCY
(VARIOUS VALUES OF L3 AND L6)RF FREQUENCY (MHz)
CHANNEL ISOLATION (dB)
MAX19995A toc46
10nH
6.8nH
3.6nH0Ω
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
(VARIOUS VALUES OF L3 AND L6)LO FREQUENCY (MHz)
LO LEAKAGE AT IF PORT (dBm)
MAX19995A toc47
10nH
6.8nH
3.6nH
RF-TO-IF ISOLATION vs. RF FREQUENCY
(VARIOUS VALUES OF L3 AND L6)RF FREQUENCY (MHz)
RF-TO-IF ISOLATION (dB)
MAX19995A toc48
10nH6.8nH
3.6nH
ypical Operating Characteristics (continued)(Typical Application Circuit, R1 = R4 = 681Ω, R2 = R5 = 1.5kΩ, VCC
= 5.0V, PRF= -5dBm, PLO= 0dBm, fRF= 1850MHz,
fLO= 2200MHz, fIF= 350MHz, TC= +25°C, unless otherwise noted.)
