MAX19985AETX+T Fast Delivery |IC PHOENIX CO.,LIMITED

MAX19985AETX+T ,Dual, SiGe, High-Linearity, High-Gain, 700MHz to 1000MHz Downconversion Mixer with LO Buffer/SwitchApplications for Operating Device in Reduced-Power/Reduced-Performance Mode®850MHz WCDMA and cdma20 ..
MAX1999 ,High-Efficiency, Quad Output, Main Power-Supply Controllers for Notebook ComputersApplicationsPGOOD 2 27 LX3ON3 3 26 DH3Notebook and Subnotebook ComputersON5 4 25 LDO3PDAs and Mobil ..
MAX19995AETX+T ,Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/SwitchApplications♦ External Current-Setting Resistors Provide OptionUMTS/WCDMA Base Stationsfor Operatin ..
MAX19997AETX+T ,Dual, SiGe, High-Linearity, High-Gain, 2300MHz to 2700MHz Downconversion Mixer with LO Buffer/SwitchBlock Diagram appears atcdma2000 is a registered trademark of TelecommunicationsIndustry Associatio ..
MAX1999EEI ,High-Efficiency / Quad Output / Main Power- Supply Controllers for Notebook ComputersFeatures♦ No Current-Sense Resistor Needed (MAX1999)The MAX1777/MAX1977/MAX1999 dual step-down,swit ..
MAX1999EEI+ ,High-Efficiency, Quad Output, Main Power-Supply Controllers for Notebook ComputersMAX1777/MAX1977/MAX199919-2187; Rev 1; 9/04High-Efficiency, Quad Output, Main Pow er-Supply Control ..
MAX5033DASA+T ,500mA, 76V, High-Efficiency, MAXPower Step-Down DC-DC ConverterEVALUATION KIT AVAILABLEMAX5033 500mA, 76V, High-Efficiency, MAXPower Step-Down DC-DC Converter
MAX5033DUSA+ ,500mA, 76V, High-Efficiency, MAXPower Step-Down DC-DC ConverterFeaturesThe MAX5033 easy-to-use, high-efficiency, high-voltage, ● Wide 7.5V to 76V Input Voltage Ra ..
MAX5033DUSA+ ,500mA, 76V, High-Efficiency, MAXPower Step-Down DC-DC ConverterElectrical Characteristics (MAX5033_U_ _)(V = +12V, V = +12V, I = 0, T = 0°C to +85°C, unless other ..
MAX5033DUSA+T ,500mA, 76V, High-Efficiency, MAXPower Step-Down DC-DC ConverterApplicationsMAX5033BASA -40°C to +125°C 8 SO● Consumer ElectronicsMAX5033CUSA 0°C to +85°C 8 SO● In ..
MAX5033DUSA+T ,500mA, 76V, High-Efficiency, MAXPower Step-Down DC-DC ConverterElectrical Characteristics (MAX5033_U_ _) (continued)(V = +12V, V = +12V, I = 0, T = 0°C to +85°C, ..
MAX5035AASA ,1A, 76V, High-Efficiency MAXPower Step-Down DC-DC ConverterELECTRICAL CHARACTERISTICS (MAX5035_U_ _)(V = +12V, V = +12V, I = 0, T = 0°C to +85°C, unless other ..

MAX19985AETX+T
Dual, SiGe, High-Linearity, High-Gain, 700MHz to 1000MHz Downconversion Mixer with LO Buffer/Switch
General Description
The MAX19985A high-linearity, dual-channel, downcon-
version mixer is designed to provide approximately
8.7dB gain, +25.5dBm of IIP3, and 9.0dB of noise fig-
ure for 700MHz to 1000MHz diversity receiver applica-
tions. With an optimized LO frequency range of
900MHz to 1300MHz, this mixer is ideal for high-side
LO injection architectures in the cellular and new
700MHz bands. Low-side LO injection is supported by
the MAX19985, which is pin-pin and functionally com-
patible with the MAX19985A.
In addition to offering excellent linearity and noise per-
formance, the MAX19985A also yields a high level
of component integration. This device includes two
double-balanced passive mixer cores, two LO buffers,
a dual-input LO selectable switch, and a pair of differ-
ential IF output amplifiers. On-chip baluns are also inte-
grated to allow for single-ended RF and LO inputs.
The MAX19985A requires a nominal LO drive of 0dBm
and a typical supply current of 330mA at VCC= +5.0V
or 280mA at VCC= +3.3V.
The MAX19985/MAX19985A are pin compatible with
the MAX19995/MAX19995A series of 1700MHz to
2200MHz mixers and pin similar with the MAX19997A/
MAX19999 series of 1850MHz to 3800MHz mixers,
making this entire family of downconverters ideal for
applications where a common PCB layout is used
across multiple frequency bands.
The MAX19985A is available in a 6mm x 6mm, 36-pin
thin QFN package with an exposed pad. Electrical per-
formance is guaranteed over the extended temperature
range of TC= -40°C to +85°C.
Applications
850MHz WCDMA and cdma2000®Base Stations
700MHz LTE/WiMAX™ Base Stations
GSM850/900 2G and 2.5G EDGE Base Stations
iDEN®Base Stations
Fixed Broadband Wireless Access
Wireless Local Loop
Private Mobile Radios
Military Systems
Features700MHz to 1000MHz RF Frequency Range900MHz to 1300MHz LO Frequency Range50MHz to 500MHz IF Frequency Range8.7dB Typical Conversion Gain9.0dB Typical Noise Figure+25.5dBm Typical Input IP3+12.6dBm Typical Input 1dB Compression Point76dBc Typical 2LO-2RF Spurious Rejection at
PRF= -10dBmDual Channels Ideal for Diversity Receiver
Applications48dB Typical Channel-to-Channel IsolationLow -3dBm to +3dBm LO DriveIntegrated LO BufferInternal RF and LO Baluns for Single-Ended
InputsBuilt-In SPDT LO Switch with 46dB LO1-to-LO2
Isolation and 50ns Switching TimePin Compatible with the MAX19995/MAX19995A
Series of 1700MHz to 2200MHz MixersPin Similar to the MAX19997A/MAX19999 Series
of 1850MHz to 3800MHz MixersSingle +5.0V or +3.3V SupplyExternal Current-Setting Resistors Provide Option
for Operating Device in Reduced-Power/Reduced-
Performance Mode
MAX19985A
Dual, SiGe, High-Linearity, 700MHz to 1000MHz
Downconversion Mixer with LO Buffer/Switch
19-4185; Rev 0; 8/08
cdma2000 is a registered trademark of Telecommunications
Industry Association.
WiMAX is a trademark of WiMAX Forum.
Typical Application Circuit and Pin Configuration appear at
end of data sheet.
+Denotes a lead-free/RoHS-compliant package.
*EP = Exposed pad.
T = Tape and reel.
Ordering Information
PARTTEMP RANGEPIN-PACKAGE
MAX19985AETX+-40°C to +85°C36 Thin QFN-EP*
MAX19985AETX+T-40°C to +85°C36 Thin QFN-EP*
MAX19985A
Dual, SiGe, High-Linearity, 700MHz to 1000MHz
Downconversion Mixer with LO Buffer/Switch
ABSOLUTE MAXIMUM RATINGS
+3.3V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, VCC= 3.0V to 3.6V, TC= -40°C to +85°C. Typical values are at VCC= 3.3V, TC= +25°C, all parameters
are guaranteed by design and not production tested, unless otherwise noted.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Note 1:Based on junction temperature TJ= TC+ (θJCx VCCx ICC). This formula can be used when the temperature of the exposed
pad is known while the device is soldered down to a PCB. See the Applications Informationsection for details. The junction
temperature must not exceed +150°C.
Note 2:Junction temperature TJ= TA+ (θJAx VCCx ICC). This formula can be used when the ambient temperature of the PCB is
known. The junction temperature must not exceed +150°C.
Note 3:Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to /thermal-tutorial.
Note 4:TCis the temperature on the exposed pad of the package. TAis the ambient temperature of the device and PCB.
VCCto GND...........................................................-0.3V to +5.5V
LO1, LO2 to GND...............................................................±0.3V
Any Other Pins to GND...............................-0.3V to (VCC+ 0.3V)
RFMAIN, RFDIV, and LO_ Input Power..........................+15dBm
RFMAIN, RFDIV Current (RF is DC shorted
to GND through balun)....................................................50mA
Continuous Power Dissipation (Note 1) ..............................8.8W
θJA(Notes 2, 3)..............................................................+38°C/W
θJC (Note 3).....................................................................7.4°C/W
Operating Temperature Range (Note 4).....TC= -40°C to +85°C
Junction Temperature......................................................+150°C
Storage Temperature Range.............................-65°C to +150°C
Lead Temperature (soldering, 10s).................................+300°C
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITS
Supply VoltageVCCR2 = R5 = 600Ω3.03.33.6V
Supply CurrentICCTotal supply current, VCC = 3.3V280mA
LOSEL Input High VoltageVIH2V
LOSEL Input Low VoltageVIL0.8V
+5.0V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, VCC= 4.75V to 5.25V, TC= -40°C to +85°C. Typical values are at VCC= 5.0V, TC= +25°C, all parame-
ters are production tested, unless otherwise noted.)
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITS
Supply VoltageVCC4.7555.25V
Supply CurrentICC330380mA
LOSEL Input High VoltageVIH2V
LOSEL Input Low VoltageVIL0.8V
LOSEL Input CurrentIIH, IIL-10+10µA
MAX19985A
Dual, SiGe, High-Linearity, 700MHz to 1000MHz
Downconversion Mixer with LO Buffer/Switch
RECOMMENDED AC OPERATING CONDITIONS
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITS
RF FrequencyfRF(Note 5)7001000MHz
LO FrequencyfLO(Note 5)9001300MHzsi ng M i ni - C i r cui ts TC 4- 1W- 17 4:1 tr ansfor m er
as defined in the Typical Application Circuit,
IF matching components affect the IF
frequency range (Note 5)
IF FrequencyfIF
Using alternative Mini-Circuits TC4-1W-7A
4:1 transformer, IF matching components
affect the IF frequency range (Note 5)250
MHz
LO Drive LevelPLO(Note 5)-3+3dBm
+5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, VCC= +4.75V to +5.25V, RF and LO ports are driven from 50Ωsources, PLO= -3dBm to +3dBm,
PRF= -5dBm, fRF= 700MHz to 1000MHz, fLO= 900MHz to 1200MHz, fIF= 200MHz, fRF< fLO, TC= -40°C to +85°C. Typical values
are at VCC= +5.0V, PRF= -5dBm, PLO = 0dBm, fRF=900MHz, fLO= 1100MHz, fIF = 200MHz, TC=+25°C, all parameters are guaran-
teed by design and characterization, unless otherwise noted.) (Note 6)
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITS
fIF = 200MHz, fRF = 824MHz to 915MHz,
TC = -40°C to +85°C7.08.710.2
Conversion Power GainGC
fIF = 200MHz, fRF = 824MHz to 915MHz,
TC = +25°C (Note 9)7.78.79.7
Conversion Power Gain Variation
vs. FrequencyΔGC
Flatness over any one of three frequency
bands:
fRF = 824MHz to 849MHz,
fRF = 869MHz to 894MHz,
fRF = 880MHz to 915MHz (Note 9)
0.150.3dBai n V ar i ati on Over Tem p er atur eTCGTC = -40°C to +85°C-0.012dB/°C
TC = -40°C to +85°C9.211.5
Noise FigureNFfRF = 850MHz, fIF = 200MHz,LO = 0d Bm , TC = + 25°C , V C C = + 5.0V 9.010.3dB
Noise Figure Temperature
CoefficientTCNFTC = -40°C to +85°C0.018dB/°C
Noise Figure Under Blocking
ConditionNFB
+8dBm blocker tone applied to RF port,
fRF = 900MHz, fLO = 1090MHz,
PLO = -3dBm, fBLOCKER = 800MHz,
VCC = +5.0V (Note 7)
18.822dB
TC = -40°C to +85°C10.012.6Input 1dB Compression PointIP1dBTC = +25°C (Note 9)11.012.6dBm
fRF = 824MHz to 915MHz,
fRF1 - fRF2 = 1MHz, fIF = 200MHz,
PRF = -5dBm/tone, TC = -40°C to +85°C
Third-Order Input Intercept PointIIP3fRF = 824MHz to 915MHz,
fRF1 - fRF2 = 1MHz, fIF = 200MHz,
dBm
MAX19985A
Dual, SiGe, High-Linearity, 700MHz to 1000MHz
Downconversion Mixer with LO Buffer/Switch
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITS
PRF = -10dBm-63-76
2LO-2RF Spur Rejection2 x 2
fRF = 800MHz,
fLO = 1000MHz,
fSPUR = 900MHz
PRF = -5dBm
(Note 9)-58-71dBc
PRF = -10dBm-65-78
3LO-3RF Spur Rejection3 x 3
fRF = 800MHz,
fLO = 1000MHz,
fSPUR = 933.3MHz
PRF = -5dBm
(Note 9)-60-73dBc
LO Leakage at RF PortfLO = 900MHz to 1300MHz, PLO = +3dBm
(Note 10)-40-20dBm
fLO = 900MHz to 1200MHz, PLO = +3dBm
(Note 10)-38-25
2LO Leakage at RF PortfL O = 1200M H z to 1300M H z, P L O = + 3d Bm
(Note 10)-35-22
dBm
3LO Leakage at RF PortfLO = 900MHz to 1300MHz, PLO = +3dBm
(Note 10)-50-28dBm
4LO Leakage at RF PortfLO = 900MHz to 1300MHz, PLO = +3dBm
(Note 9)-25-15dBm
LO Leakage at IF PortfLO = 900MHz to 1300MHz, PLO = +3dBm
(Note 10)-35-23dBm
RF-to-IF IsolationfRF = 824MHz to 915MHz (Note 10)3038dB
LO-to-LO Isolation
PLO1 = +3dBm, PLO2 = +3dBm,
fLO1 = 900MHz, fLO2 = 901MHz,
PRF = -5dBm (Notes 8, 10)46dB
Channel-to-Channel Isolation
RFM AIN ( RFD IV ) conver ted p ow er m easur ed
at IFD IV ( IFM AIN ) , r el ati ve to IFM AIN ( IFD IV ) ,
al l unused p or ts ter m i nated to 50Ω ( N ote 9) 48dB
LO Switching Time50% of LOS E L to IF settl ed w i thi n 2 d eg r ees501000ns
RF Input ImpedanceZRF50Ω
RF Input Return LossLO on and IF terminated into matched
impedance20dB
LO Input ImpedanceZLO50Ω
RF and IF terminated into matched
impedance, LO port selected20
LO Input Return Loss
RF and IF terminated into matched
impedance, LO port unselected20
IF Terminal Output ImpedanceZIFNominal differential impedance at the IC’s
IF output200Ω
IF Return Loss
RF terminated in 50Ω; transformed to 50Ω
using external components shown in the
Typical Application CircuitdB
+5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued)
(Typical Application Circuit, VCC= +4.75V to +5.25V, RF and LO ports are driven from 50Ωsources, PLO= -3dBm to +3dBm,
PRF= -5dBm, fRF= 700MHz to 1000MHz, fLO= 900MHz to 1200MHz, fIF= 200MHz, fRF< fLO, TC= -40°C to +85°C. Typical values
are at VCC= +5.0V, PRF= -5dBm, PLO = 0dBm, fRF=900MHz, fLO= 1100MHz, fIF = 200MHz, TC=+25°C, all parameters are guaran-
teed by design and characterization, unless otherwise noted.) (Note 6)
MAX19985A
Dual, SiGe, High-Linearity, 700MHz to 1000MHz
Downconversion Mixer with LO Buffer/Switch
+3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, RF and LO ports are driven from 50Ωsources. Typical values are at VCC= +3.3V, PRF= -5dBm,
PLO = 0dBm, fRF= 900MHz, fLO= 1100MHz, fIF= 200MHz, TC=+25°C, unless otherwise noted.) (Note 6)
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITS
Conversion Power GainGC8.7dB
Conversion Power Gain Variation
vs. FrequencyΔGC
Flatness over any one of three frequency
bands:
fRF = 824MHz to 849MHz,
fRF = 869MHz to 894MHz,
fRF = 880MHz to 915MHz
0.15dBai n V ar i ati on Over Tem p er atur eTCGTC = -40°C to +85°C-0.012dB/°C
Noise FigureNF9.0dB
Noise Figure Temperature
CoefficientTCNFTC = -40°C to +85°C0.018dB/°C
Input 1dB Compression PointIP1dB10.6dBm
Third-Order Input Intercept PointIIP3fRF1 = 900MHz, fRF2 = 901MHz,
fIF = 200MHz, PRF = -5dBm/tone24.7dBm
PRF = -10dBm-74.9
2LO-2RF Spur Rejection2 x 2
fRF = 800MHz,
fLO = 1000MHz,
fSPUR = 900MHzPRF = -5dBm-69.9
dBc
PRF = -10dBm-78
3LO-3RF Spur Rejection3 x 3
fRF = 800MHz,
fLO = 1000MHz,
fSPUR = 933.333MHzPRF = -5dBm-73
dBc
Maximum LO Leakage at RF PortfLO = 900MHz to 1300MHz, PLO = +3dBm-40dBmaxi m um 2LO Leakag e at RF P or tfLO = 900MHz to 1300MHz, PLO = +3dBm-42dBm
Maximum LO Leakage at IF PortfLO = 900MHz to 1300MHz, PLO = +3dBm-34dBm
Minimum RF-to-IF IsolationfRF = 824MHz to 915MHz38dB
LO-to-LO IsolationPLO1 = +3dBm, PLO2 = +3dBm,
fLO1 = 900MHz, fLO2 = 901MHz (Note 8)45dB
Channel-to-Channel Isolation
RFM AIN ( RFD IV ) conver ted p ow er m easur ed
at IFD IV ( IFM AIN ) , r el ati ve to IFM AIN ( IFD IV ) ,
al l unused p or ts ter m i nated to 50Ω dB
LO Switching Time50% of LOS E L to IF settl ed w i thi n 2 d eg r ees50ns
RF Input ImpedanceZRF50Ω
RF Input Return LossLO on and IF terminated into matched
impedance21dB
LO Input ImpedanceZLO50Ω
RF and IF terminated into matched
impedance, LO port selected31
LO Input Return LossRF and IF terminated into matched
impedance, LO port unselected24
MAX19985A
Dual, SiGe, High-Linearity, 700MHz to 1000MHz
Downconversion Mixer with LO Buffer/Switch
Note 5:Not production tested. Operation outside this range is possible, but with degraded performance of some parameters. See
the Typical Operating Characteristics. Performance is optimized for RF frequencies of 824MHz to 915MHz.
Note 6:All limits reflect losses of external components. Output measurements taken at IF outputs of Typical Application Circuit.
Note 7:Measured with external LO source noise filtered so the noise floor is -174dBm/Hz. This specification reflects the effects of
all SNR degradations in the mixer including the LO noise, as defined in the Application Note 2021:Specifications and
Measurement of Local Oscillator Noise in Integrated Circuit Base Station Mixers.
Note 8:Measured at IF port at IF frequency. LOSEL may be in any logic state.
Note 9:Limited production testing.
Note 10:Guaranteed by production testing.
+3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued)
(Typical Application Circuit, RF and LO ports are driven from 50Ωsources. Typical values are at VCC= +3.3V, PRF= -5dBm,
PLO = 0dBm, fRF= 900MHz, fLO= 1100MHz, fIF= 200MHz, TC=+25°C, unless otherwise noted.) (Note 6)
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITS
IF Terminal Output ImpedanceZIFNominal differential impedance at the IC’s
IF output200Ω
IF Output Return Loss
RF terminated in 50Ω; transformed to 50Ω
using external components shown in the
Typical Application CircuitdB
MAX19985A
Dual, SiGe, High-Linearity, 700MHz to 1000MHz
Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics
(Typical Application Circuit, VCC= +5.0V, PLO= 0dBm, PRF= -5dBm, LO is high-side injected for a 200MHz IF, TC=+25°C, unless
otherwise noted.)
CONVERSION GAIN vs. RF FREQUENCY
MAX19985A toc01
RF FREQUENCY (MHz)
CONVERSION GAIN (dB)
TC = +85°CTC = +25°C
TC = -30°C
CONVERSION GAIN vs. RF FREQUENCY
MAX19985A toc02
RF FREQUENCY (MHz)
CONVERSION GAIN (dB)
PLO = -3dBm, 0dBm, +3dBm
CONVERSION GAIN vs. RF FREQUENCY
MAX19985A toc03
RF FREQUENCY (MHz)
CONVERSION GAIN (dB)
VCC = 4.75V, 5.0V, 5.25V
INPUT IP3 vs. RF FREQUENCY
AX19985A toc04
RF FREQUENCY (MHz)
INPUT IP3 (dBm)
TC = +85°C
TC = +25°C
TC = -30°C
PRF = -5dBm/TONE
INPUT IP3 vs. RF FREQUENCY
AX19985A toc05
RF FREQUENCY (MHz)
INPUT IP3 (dBm)
PLO = +3dBm, 0dBmPLO = -3dBm
PRF = -5dBm/TONE
INPUT IP3 vs. RF FREQUENCY
AX19985A toc06
RF FREQUENCY (MHz)
INPUT IP3 (dBm)
VCC = 5.0V
VCC = 5.25V
VCC = 4.75V
PRF = -5dBm/TONE
NOISE FIGURE vs. RF FREQUENCY
MAX19985A toc07
RF FREQUENCY (MHz)
NOISE FIGURE (dB)
TC = +85°C
TC = +25°C
TC = -30°C
NOISE FIGURE vs. RF FREQUENCY
MAX19985A toc08
RF FREQUENCY (MHz)
NOISE FIGURE (dB)
PLO = -3dBm, 0dBm, +3dBm
NOISE FIGURE vs. RF FREQUENCY
MAX19985A toc09
RF FREQUENCY (MHz)
NOISE FIGURE (dB)
VCC = 4.75V, 5.0V, 5.25V
MAX19985A
Dual, SiGe, High-Linearity, 700MHz to 1000MHz
Downconversion Mixer with LO Buffer/Switch
2LO-2RF RESPONSE vs. RF FREQUENCY
MAX19985A toc10
RF FREQUENCY (MHz)
2LO-2RF RESPONSE (dBc)
TC = +85°C
PRF = -5dBm
TC = +25°C
TC = -30°C
2LO-2RF RESPONSE vs. RF FREQUENCY
MAX19985A toc11
RF FREQUENCY (MHz)
2LO-2RF RESPONSE (dBc)
PLO = 0dBm
PLO = +3dBm
PLO = -3dBm
PRF = -5dBm
2LO-2RF RESPONSE vs. RF FREQUENCY
MAX19985A toc12
RF FREQUENCY (MHz)
2LO-2RF RESPONSE (dBc)
PRF = -5dBm
VCC = 4.75V, 5.0V, 5.25V
3LO-3RF RESPONSE vs. RF FREQUENCY
MAX19985A toc13
RF FREQUENCY (MHz)
3LO-3RF RESPONSE (dBc)
PRF = -5dBm
TC = +85°CTC = +25°C
TC = -30°C
3LO-3RF RESPONSE vs. RF FREQUENCY
MAX19985A toc14
RF FREQUENCY (MHz)
3LO-3RF RESPONSE (dBc)
PRF = -5dBm
PLO = -3dBm, 0dBm, +3dBm
3LO-3RF RESPONSE vs. RF FREQUENCY
MAX19985A toc15
RF FREQUENCY (MHz)
3LO-3RF RESPONSE (dBc)
PRF = -5dBm
VCC = 4.75V, 5.0V, 5.25V
INPUT P1dB vs. RF FREQUENCY
MAX19985A toc16
RF FREQUENCY (MHz)
INPUT P
1dB
(dBm)
TC = +85°C
TC = +25°C
TC = -30°C
INPUT P1dB vs. RF FREQUENCY
MAX19985A toc17
RF FREQUENCY (MHz)
INPUT P
1dB
(dBm)
PLO = -3dBm, 0dBm, +3dBm
INPUT P1dB vs. RF FREQUENCY
MAX19985A toc18
RF FREQUENCY (MHz)
INPUT P
1dB
(dBm)
VCC = 5.0V
VCC = 5.25V
VCC = 4.75V
Typical Operating Characteristics (continued)
(Typical Application Circuit, VCC= +5.0V, PLO= 0dBm, PRF= -5dBm, LO is high-side injected for a 200MHz IF, TC=+25°C, unless
otherwise noted.)
MAX19985A
Dual, SiGe, High-Linearity, 700MHz to 1000MHz
Downconversion Mixer with LO Buffer/Switch
CHANNEL ISOLATION vs. RF FREQUENCY
MAX19985A toc19
RF FREQUENCY (MHz)
CHANNEL ISOLATION (dB)
TC = -30°C, +25°C, +85°C
CHANNEL ISOLATION vs. RF FREQUENCY
MAX19985A toc20
RF FREQUENCY (MHz)
CHANNEL ISOLATION (dB)
PLO = -3dBm, 0dBm, +3dBm
CHANNEL ISOLATION vs. RF FREQUENCY
MAX19985A toc21
RF FREQUENCY (MHz)
CHANNEL ISOLATION (dB)
VCC = 4.75V, 5.0V, 5.25V
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
MAX19985A toc22
LO FREQUENCY (MHz)
LO LEAKAGE AT IF PORT (dBm)
TC = -30°C
TC = +25°C, +85°C
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
MAX19985A toc23
LO FREQUENCY (MHz)
LO LEAKAGE AT IF PORT (dBm)
PLO = +3dBm
PLO = 0dBm
PLO = -3dBm
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
MAX19985A toc24
LO FREQUENCY (MHz)
LO LEAKAGE AT IF PORT (dBm)
VCC = 4.75V, 5.0V, 5.25V
RF-TO-IF ISOLATION
vs. RF FREQUENCY
MAX19985A toc25
RF FREQUENCY (MHz)
RF-TO-IF ISOLATION (dB)
TC = +85°C
TC = -30°CTC = +25°C
RF-TO-IF ISOLATION
vs. RF FREQUENCY
MAX19985A toc26
RF FREQUENCY (MHz)
RF-TO-IF ISOLATION (dB)
PLO = -3dBm, 0dBm, +3dBm
RF-TO-IF ISOLATION
vs. RF FREQUENCY
MAX19985A toc27
RF FREQUENCY (MHz)
RF-TO-IF ISOLATION (dB)
VCC = 4.75V, 5.0V, 5.25V
Typical Operating Characteristics (continued)
(Typical Application Circuit, VCC= +5.0V, PLO= 0dBm, PRF= -5dBm, LO is high-side injected for a 200MHz IF, TC=+25°C, unless
otherwise noted.)
MAX19985A
Dual, SiGe, High-Linearity, 700MHz to 1000MHz
Downconversion Mixer with LO Buffer/Switch
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19985A toc28
LO FREQUENCY (MHz)
LO LEAKAGE AT RF PORT (dBm)
TC = -30°C
TC = +85°C
TC = +25°C
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19985A toc29
LO FREQUENCY (MHz)
LO LEAKAGE AT RF PORT (dBm)
PLO = -3dBm, 0dBm, +3dBm
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19985A toc30
LO FREQUENCY (MHz)
LO LEAKAGE AT RF PORT (dBm)
VCC = 4.75V, 5.0V, 5.25V
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19985A toc31
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT (dBm)
TC = -30°C, +25°C, +85°C
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19985A toc32
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT (dBm)
PLO = -3dBm, 0dBm, +3dBm
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19985A toc33
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT (dBm)
VCC = 4.75V, 5.0V, 5.25V
LO SWITCH ISOLATION
vs. LO FREQUENCY
MAX19985A toc34
LO FREQUENCY (MHz)
LO SWITCH ISOLATION (dB)
TC = +85°C
TC = -30°C
TC = +25°C
LO SWITCH ISOLATION
vs. LO FREQUENCY
MAX19985A toc35
LO FREQUENCY (MHz)
LO SWITCH ISOLATION (dB)
PLO = +3dBm
PLO = -3dBm, 0dBm
LO SWITCH ISOLATION
vs. LO FREQUENCY
MAX19985A toc36
LO FREQUENCY (MHz)
LO SWITCH ISOLATION (dB)
VCC = 4.75V, 5.0V, 5.25V
Typical Operating Characteristics (continued)
(Typical Application Circuit, VCC= +5.0V, PLO= 0dBm, PRF= -5dBm, LO is high-side injected for a 200MHz IF, TC=+25°C, unless
otherwise noted.)
3LO-3RF RESPONSE vs. RF FREQUENCY
(VARIOUS LO AND IF BIAS)
MAX19985A toc45
RF FREQUENCY (MHz)
3LO-3RF RESPONSE (dBc)
SEE TABLE 1 FOR RESISTOR AND ICC VALUES
1, 2, 3, 4PRF = -5dBm6
2LO-2RF RESPONSE vs. RF FREQUENCY
(VARIOUS LO AND IF BIAS)
MAX19985A toc44
RF FREQUENCY (MHz)
2LO-2RF RESPONSE (dBc)
SEE TABLE 1 FOR RESISTOR AND ICC VALUES
2, 3, 41PRF = -5dBm
LO SELECTED RETURN LOSS
vs. LO FREQUENCY
MAX19985A toc39
LO FREQUENCY (MHz)
LO SELECTED RETURN LOSS (dB)
PLO = +3dBmPLO = 0dBm
PLO = -3dBm
MAX19985A
Dual, SiGe, High-Linearity, 700MHz to 1000MHz
Downconversion Mixer with LO Buffer/Switch
RF PORT RETURN LOSS
vs. RF FREQUENCY
MAX19985A toc37
RF FREQUENCY (MHz)
RF PORT RETURN LOSS (dB)
PLO = -3dBm, 0dBm, +3dBm
IF = 200MHz
IF PORT RETURN LOSS
vs. IF FREQUENCY
MAX19985A toc38
IF FREQUENCY (MHz)
IF PORT RETURN LOSS (dB)
LO = 900MHz
VCC = 4.75V, 5.0V, 5.25V
IF RETURN LOSS DEPENDS ON
EXTERNAL IF COMPONENTS
LO UNSELECTED RETURN LOSS
vs. LO FREQUENCY
MAX19985A toc40
LO FREQUENCY (MHz)
LO UNSELECTED RETURN LOSS (dB)
PLO = -3dBm, 0dBm, +3dBm
SUPPLY CURRENT
vs. TEMPERATURE (TC)
MAX19985A toc41
TEMPERATURE (°C)
SUPPLY CURRENT (mA)
VCC = 5.25V
VCC = 4.75V
VCC = 5.0V
CONVERSION GAIN vs. RF FREQUENCY
(VARIOUS LO AND IF BIAS)
MAX19985A toc42
RF FREQUENCY (MHz)
CONVERSION GAIN (dB)
SEE TABLE 1 FOR RESISTOR AND ICC VALUES
1, 2, 3, 45
INPUT IP3 vs. RF FREQUENCY
(VARIOUS LO AND IF BIAS)
MAX19985A toc43
RF FREQUENCY (MHz)
INPUT IP3 (dBm)
SEE TABLE 1 FOR RESISTOR AND ICC VALUES
2, 3, 411
Typical Operating Characteristics (continued)
(Typical Application Circuit, VCC= +5.0V, PLO= 0dBm, PRF= -5dBm, LO is high-side injected for a 200MHz IF, TC=+25°C, unless
otherwise noted.)
MAX19985A
Dual, SiGe, High-Linearity, 700MHz to 1000MHz
Downconversion Mixer with LO Buffer/Switch
INPUT P1dB vs. RF FREQUENCY
(VARIOUS LO AND IF BIAS)
MAX19985A toc46
RF FREQUENCY (MHz)
INPUT P
1dB
(dBm)
SEE TABLE 1 FOR RESISTOR AND ICC VALUES
1, 2, 3, 476
CONVERSION GAIN vs. RF FREQUENCY
(VARIOUS VALUES OF L3 AND L6)
MAX19985A toc47
RF FREQUENCY (MHz)
CONVERSION GAIN (dB)
L = L3 = L6
L = 0Ω, 7.5nH, 15nH, 30nH
INPUT IP3 vs. RF FREQUENCY
(VARIOUS VALUES OF L3 AND L6)
MAX19985A toc48
RF FREQUENCY (MHz)
INPUT IP3 (dBm)
L = L3 = L6
L = 0Ω, 7.5nH, 15nH
L = 30nH
2LO-2RF RESPONSE vs. RF FREQUENCY
(VARIOUS VALUES OF L3 AND L6)
MAX19985A toc49
RF FREQUENCY (MHz)
2LO-2RF RESPONSE (dBc)
PRF = -5dBm
L = L3 = L6
L = 30nH
L = 7.5nHL = 15nH
L = 0Ω
3LO-3RF RESPONSE vs. RF FREQUENCY
(VARIOUS VALUES OF L3 AND L6)
MAX19985A toc50
RF FREQUENCY (MHz)
3LO-3RF RESPONSE (dBc)
PRF = -5dBm
L = L3 = L6
L = 0Ω, 7.5nH, 15nH, 30nH
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
(VARIOUS VALUES OF L3 AND L6)
MAX19985A toc51
LO FREQUENCY (MHz)
LO LEAKAGE AT IF PORT (dBm)
L = 0Ω
L = 7.5nH
L = 30nH
L = 15nH
L = L3 = L6
RF-TO-IF ISOLATION vs. RF FREQUENCY
(VARIOUS VALUES OF L3 AND L6)
MAX19985A toc52
RF FREQUENCY (MHz)
RF-TO-IF ISOLATION (dB)
L = 0Ω
L = 7.5nH
L = 30nHL = 15nHL = L3 = L6
Typical Operating Characteristics (continued)
(Typical Application Circuit, VCC= +5.0V, PLO= 0dBm, PRF= -5dBm, LO is high-side injected for a 200MHz IF, TC=+25°C, unless
otherwise noted.)

Partno	Mfg	Dc	Qty	Available	Descript
MAX19985AETX+T \|MAX19985AETXT	MAXIM	N/a	2454	avai	Dual, SiGe, High-Linearity, High-Gain, 700MHz to 1000MHz Downconversion Mixer with LO Buffer/Switch