MAX13047EEVB+ ,Single- and Dual-Channel, Bidirectional Low-Level TranslatorsApplicationsµDFN1mm × 1.5mm2 ®I C and 1-Wire Level TranslationCMOS Logic-Level TranslationMAX13047E ..
MAX1304ECM+ ,8-/4-/2-Channel, 12-Bit, Simultaneous-Sampling ADCs with ±10V, ±5V, and 0 to +5V Analog Input RangesFeatures● Up to Eight Channels of Simultaneous Sampling The MAX1304–MAX1306/MAX1308–MAX1310/MAX1312 ..
MAX1305 ,8/4/2-Channel, 12-Bit, Simultaneous-Sampling ADCs with ±10V, ±5V, and 0 to +5V Analog Input RangesApplications• 55mA Analog Supply Current ● SIN/COS Position Encoder• 1.3mA Digital Supply Current ● ..
MAX13050ASA ,Industry-Standard High-Speed CAN Transceivers with ±80V Fault ProtectionElectrical Characteristics(V = +5V ±5%, V 2 = +3V to +3.6V, T = T to T , unless otherwise noted. Ty ..
MAX13050ASA+ ,Industry-Standard High-Speed CAN Transceivers with ±80V Fault Protectionapplications where overvoltage protection is required. ● +3.3V Logic Compatible (MAX13054)These CAN ..
MAX13050ASA+ ,Industry-Standard High-Speed CAN Transceivers with ±80V Fault Protectionfeatures a silent mode that disables the ● Medium- and Heavy-Duty Truck Systemstransmitter. The MA ..
MAX383CSE+ ,Precision, Low-Voltage, SPST CMOS Analog SwitchBlock Diagrams/Truth TablesTOP VIEWCOM 1 1 16 1 1NO1 COM 1 16 NO1 COM 1 16 NO1 2N.C. 15 IN1 2 15 IN ..
MAX383EPE ,Precision, Low-Voltage Analog SwitchesELECTRICAL CHARACTERISTICS—Dual Supplies(V+ = +5V ±10%, V- = -5V ±10%, GND = 0V, V = 2.4V, V = 0.8V ..
MAX383ESE ,Precision, Low-Voltage Analog SwitchesApplicationsMAX381ESE -40°C to +85°C 16 Narrow SOSample-and-Hold Circuits Military RadiosMAX381EJE ..
MAX383ESE ,Precision, Low-Voltage Analog SwitchesFeaturesThe MAX381/MAX383/MAX385 are precision, low-volt- ' Single-Supply Operation (+3V to +15V)ag ..
MAX383ESE ,Precision, Low-Voltage Analog SwitchesMAX381/MAX383/MAX38519-0300; Rev 0; 9/94Precision, Low-Voltage Analog Switches_______________
MAX383ESE+ ,Precision, Low-Voltage, SPST CMOS Analog SwitchELECTRICAL CHARACTERISTICS—Dual Supplies(V+ = +5V ±10%, V- = -5V ±10%, GND = 0V, V = 2.4V, V = 0.8V ..
MAX13047EEVB+
Single- and Dual-Channel, Bidirectional Low-Level Translators
General DescriptionThe MAX13046E/MAX13047E ±15kV ESD-protected
bidirectional level translators provide level shifting for
data transfer in a multivoltage system. The MAX13046E
is a single-channel translator, and the MAX13047E is a
dual-channel translator. Externally applied voltages,
VCCand VL, set the logic level on either side of the
device. The MAX13046E/MAX13047E utilize a transmis-
sion-gate-based design to allow data translation in
either direction (VL↔VCC) on any single data line. The
MAX13046E/MAX13047E accept VLfrom +1.1V to the
minimum of either +3.6V or (VCC+ 0.3V), and VCCfrom
+1.65V to +5.5V, making these devices ideal for data
transfer between low-voltage ASICs/PLDs and higher
voltage systems.
The MAX13046E/MAX13047E feature a shutdown mode
that reduces supply current to less than 1µA thermal
short-circuit protection, and ±15kV ESD protection on the
VCCside for enhanced protection in applications that
route signals externally. The MAX13046E/MAX13047E
operate at a guaranteed data rate of 8Mbps when push-
pull driving is used.
The MAX13046E is available in a 6-pin µDFN package,
and the MAX13047E is available in a 10-pin UTQFN.
Both devices are specified over the extended -40°C to
+85°C operating temperature range.
ApplicationsI2C and 1-Wire®Level Translation
CMOS Logic-Level Translation
Cell Phones
Portable Devices
FeaturesBidirectional Level TranslationOperation Down to +1.1V on VLUltra-Low Supply Current in Shutdown Mode
1µA (max)Guaranteed Push-Pull Driving Data Rate8Mbps (+1.2V ≤VL≤
+3.6V, VCC≤
+5.5V)
16Mbps (+1.8V ≤VL ≤VCC≤
+3.3V)Extended ESD Protection on the I/O VCCLines
±15kV Human Body Model±15kV IEC61000-4-2 Air-Gap Discharge Method
±8kV IEC61000-4-2 Contact DischargeLow Supply CurrentShort-Circuit ProtectionSpace-Saving µDFN and UTQFN Packages
MAX13046E/MAX13047E
Single- and Dual-Bidirectional
Low-Level Translator
Ordering Information/Selector Guide19-4149; Rev 1; 8/08
Note:All devices are specified over the extended -40°C to +85°C operating temperature range.
+Denotes a lead-free/RoHS-compliant package.
EP = Exposed pad.
PARTPIN-PACKAGENUMBER OF CHANNELSTOP MARK
MAX13046EELT+6 µDFN (1mm x 1.5mm)1OC
MAX13047EEVB+10 UTQFN (1.4mm x 1.8mm)2AAC
Pin ConfigurationsTOP VIEW
MAX13046E
µDFN
1mm × 1.5mmSHDN
GND
VCC
VL1
I/O VCC
I/O VL
UTQFN1.4mm × 1.8mmMAX13047E
VCCN.C.
I/O VL2VL26N.C.SHDN
I/O VCC2
I/O VL1
GND
I/O VCC15
Typical Application Circuits appear at end of data sheet.1-Wire is a registered trademark of Maxim Integrated Products, Inc.
MAX13046E/MAX13047E
Single- and Dual-Bidirectional
Low-Level Translator
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS(VCC= +1.65V to +5.5V, VL= +1.1V to minimum of either +3.6V or ((VCC+ 0.3V)), I/O VL and I/O VCCare unconnected, TA= -40°C to
+85°C, unless otherwise noted. Typical values are VCC= +3.3V, VL= +1.8V at TA= +25°C.) (Notes 2, 3)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
(All voltages referenced to GND.)
VCC...........................................................................-0.3V to +6V
VL..............................................................................-0.3V to +4V
I/O VCC.......................................................-0.3V to (VCC+ 0.3V)
I/O VL............................................................-0.3V to (VL+ 0.3V)
SHDN........................................................................-0.3V to +6V
Short-Circuit Duration I/O VL, I/O VCCto GND...........Continuous
Power Dissipation (TA= +70°C)
6-Pin µDFN (derate 2.1mW/°C above +70°C).............168mW
10-Pin UTQFN (derate 6.9mW/°C above +70°C).........559mW
Junction-to-Ambient Thermal Resistance (θJA) (Note 1)
6-Pin µDFN.................................................................477°C/W
10-Pin UTQFN...........................................................20.1°C/W
Junction-to-Ambient Thermal Resistance (θJC) (Note 1)
6-Pin µDFN................................................................20.1°C/W
10-Pin UTQFN.........................................................143.1°C/W
Operating Temperature Range...........................-40°C to +85°C
Junction Temperature......................................................+150°C
Storage Temperature Range.............................-65°C to +150°C
Lead Temperature (soldering, 10s).................................+300°C
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITS
POWER SUPPLYVCC > 3.3V1.13.6VVL Supply RangeVLVCC ≤ 3.3V1.1VCC + 0.3VV
VCC Supply RangeVCC1.655.5V
Supply Current from VCCIQVCC10µA
Supply Current from VLIQVL15µA
VCC Shutdown-Mode Supply CurrentISD-VCCTA = +25°C, SHDN = GND0.031µA
VL Shutdown-Mode Supply CurrentISD-VLTA = +25°C, SHDN = GND0.031µA
I/O VL and I/O VCC Shutdown-Mode
Leakage CurrentISD-LKGTA = +25°C, SHDN = GND0.020.5µA
SHDN Input LeakageTA = +25°C0.020.1µA
ESD PROTECTIONHuman Body Model±15V
IEC 61000-4-2 Air-Gap Discharge±15VI/O VCC (Note 4)
IEC 61000-4-2 Contact Discharge±8V
All Other PinsHuman Body Model±2kV
LOGIC-LEVEL THRESHOLDSI/O VL Input-Voltage HighVIHLVL -
0.2V
I/O VL Input-Voltage LowVILL0.15V
Note 1:Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to /thermal-tutorial.
MAX13046E/MAX13047E
Single- and Dual-Bidirectional
Low-Level Translator
ELECTRICAL CHARACTERISTICS (continued)(VCC= +1.65V to +5.5V, VL= +1.1V to minimum of either +3.6V or ((VCC+ 0.3V)), I/O VL and I/O VCCare unconnected, TA= -40°C to
+85°C, unless otherwise noted. Typical values are VCC= +3.3V, VL= +1.8V at TA= +25°C.) (Notes 2, 3)
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITSI/O VCC Input-Voltage HighVIHCVCC -
0.4V
I/O VCC Input-Voltage LowVILC0.15V
I/O VL Output-Voltage HighVOHLI/O VL source current = 20µA,
VI/O VCC > VCC - 0.4V
0.67 xV
I/O VL Output-Voltage LowVOLLI/O VL sink current = 1mA,
VI/O VCC < 0.15V0.4V
I/O VCC Output-Voltage HighVOHCI/O VCC source current = 20µA,
VI/O VL > VL - 0.2V
0.67 x
VCCV
I/O VCC Output-Voltage LowVOLCI/O VCC sink current = 1mA,
VI/O VL < 0.15V0.4V
VL > 1.2VL - 0.2SHDN Input-Voltage HighVIH-SHDN1.1 ≤ VL < 1.2VL - 0.1V
SHDN Input-Voltage LowVIL-SHDN0.15V
I/O VL-to-I/O VCC Resistance80250Ω
VCC Shutdown Threshold LowVTH_L_VCCVCC falling, VL = +3.3V0.50.81.1V
VCC Shutdown Threshold HighVTH_H_VCCVCC rising, VL = +3.3V0.30.60.9V
VL Shutdown ThresholdVTH_VL0.350.751.06V
Pullup ResistanceVCC = VL = +3.3V61015.5kΩ
RISE/FALL-TIME ACCELERATOR STAGEAccelerator Pulse Duration20ns
I/O VL Output-Accelerator Source
ImpedanceVL = 1.7V13Ω
I/O VCC Output-Accelerator Source
ImpedanceVCC = 2.2V17Ω
I/O VL Output-Accelerator Source
ImpedanceVL = 3.2V6Ω
I/O VCC Output-Accelerator Source
ImpedanceVCC = 3.6V10Ω
MAX13046E/MAX13047E
Single- and Dual-Bidirectional
Low-Level Translator
TIMING CHARACTERISTICS FOR +1.2V ≤VL≤
MINIMUM OF EITHER +3.6V OR (VCC + 0.3V)(VCC≤±5.5V, +1.2V ≤VL≤minimum of either +3.6V or ((VCC+ 0.3V)), RS= 50Ω, RL= 1MΩ, CL= 15pF, TA= -40°C to +85°C, unless
otherwise noted. Typical values are VCC= +3.3V, VL= +1.8V at TA= +25°C.) (Notes 2, 3, 5)
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITSPush-pull driving, Figure 1a725I/O VCC Rise TimetRVCCOpen-drain driving, Figure 1c170400ns
Push-pull driving, Figure 1a637I/O VCC Fall TimetFVCCOpen-drain driving, Figure 1c2050ns
Push-pull driving, Figure 1b830I/O VL Rise TimetRVLOpen-drain driving, Figure 1d180400ns
Push-pull driving, Figure 1356I/O VL Fall TimetFVLOpen-drain driving, Figure 1d3060ns
Push-pull driving530tPD-VL-VCCDriving I/O VLOpen-drain driving2101000
Push-pull driving430Propagation Delay
tPD-VCC-VLDriving I/O VCCOpen-drain driving1901000
Push-pull driving20Channel-to-Channel SkewtSKEWEach translator
equally loadedOpen-drain driving50ns
Push-pull driving8MbpsMaximum Data RateOpen-drain driving500kbps
TIMING CHARACTERISTICS FOR +1.1V ≤VL≤
+1.2V(VCC≤±5.5V, +1.1V ≤VL≤+1.2V, RS= 50Ω, RL= 1MΩ, CL= 15pF, TA= -40°C to +85°C, unless otherwise noted. Typical values are
VCC= +3.3V, VL= +1.8V at TA= +25°C.) (Notes 2, 3, 5)
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITSPush-pull driving, Figure 1a7200I/O VCC Rise TimetRVCCOpen-drain driving, Figure 1c170400ns
Push-pull driving, Figure 1a637I/O VCC Fall TimetFVCCOpen-drain driving, Figure 1c2050ns
Push-pull driving, Figure 1b830I/O VL Rise TimetRVLOpen-drain driving, Figure 1d180400ns
Push-pull driving, Figure 1330I/O VL Fall TimetFVLOpen-drain driving, Figure 1d3060ns
Push-pull driving5200tPD-VL-VCCDriving I/O VLOpen-drain driving2101000
Push-pull driving4200Propagation Delay
tPD-VCC-VLDriving I/O VCCOpen-drain driving1901000
Push-pull driving20Channel-to-Channel SkewtSKEWEach translator
equally loadedOpen-drain driving50ns
Push-pull driving1.2MbpsMaximum Data RateOpen-drain driving500kbps
MAX13046E/MAX13047E
Single- and Dual-Bidirectional
Low-Level Translator
TIMING CHARACTERISTICS FOR +1.8V ≤VL≤
VCC≤
+3.3V(+1.8V ≤VL≤VCC≤+3.3V, RS= 50Ω, RL= 1MΩ, CL= 15pF, TA= -40°C to +85°C, unless otherwise noted. Typical values are VCC= +3.3V,= +1.8V at TA= +25°C.) (Notes 2, 3, 5)
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITSI/O VCC Rise TimetRVCCPush-pull driving, Figure 1a15ns
I/O VCC Fall TimetFVCCPush-pull driving, Figure 1a15ns
I/O VL Rise TimetRVLPush-pull driving, Figure 1b15ns
I/O VL Fall TimetFVLPush-pull driving, Figure 1b15ns
tPD-VL-VCCPush-pull driving, driving I/O VL15Propagation DelaytPD-VCC-VLPush-pull driving, driving I/O VCC15ns
Channel-to-Channel SkewtSKEWPush-pull driving, each translator
equally loaded10ns
Maximum Data RatePush-pull driving16Mbps
Note 2:All units are 100% production tested at TA= +25°C. Limits over the operating temperature range are guaranteed by design
and not production tested.
Note 3:For normal operation, ensure VL< (VCC+ 0.3V). During power-up, VL> (VCC+ 0.3V) does not damage the device.
Note 4:ESD protection is guaranteed by design. To ensure maximum ESD protection, place a 1µF ceramic capacitor between VCC
and GND. See Typical Application Circuits.
Note 5:Timing is measured using 10% of input to 90% of output.
MAX13046E/MAX13047E
Single- and Dual-Bidirectional
Low-Level Translator
Typical Operating Characteristics(VCC= +3.3V, VL= +1.8V, RL= 1MΩ, CL= 15pF, push-pull driving data rate = 8Mbps, TA= +25°C, unless otherwise noted.)
VL DYNAMIC SUPPLY CURRENT
vs. VCC SUPPLY VOLTAGE
(PUSH-PULL DRIVING ONE I/O VL)VCC SUPPLY VOLTAGE (V)
SUPPLY CURRENT (
MAX13046E/7E toc01
VL DYNAMIC SUPPLY CURRENT
vs. VCC SUPPLY VOLTAGE
(PUSH-PULL DRIVING ONE I/O VCC)
VCC SUPPLY VOLTAGE (V)
SUPPLY CURRENT (
MAX13046E/7E toc02
VCC DYNAMIC SUPPLY CURRENT
vs. VL SUPPLY VOLTAGE
(PUSH-PULL DRIVING ONE I/O VL)
VL SUPPLY VOLTAGE (V)
SUPPLY CURRENT (
MAX13046E/7E toc03
VCC DYNAMIC SUPPLY CURRENT
vs. VL SUPPLY VOLTAGE
(PUSH-PULL DRIVING ONE I/O VCC)
VL SUPPLY VOLTAGE (V)
SUPPLY CURRENT (
MAX13046E/7E toc04
VL DYNAMIC SUPPLY CURRENT
vs. TEMPERATURE
(PUSH-PULL DRIVING ONE I/O VL)
TEMPERATURE (°C)
SUPPLY CURRENT (
MAX13046E/7E toc05
VL DYNAMIC SUPPLY CURRENT
vs. TEMPERATURE
(PUSH-PULL DRIVING ONE I/O VCC)
TEMPERATURE (°C)
SUPPLY CURRENT (MAX13046E/7E toc06
VL DYNAMIC SUPPLY CURRENT
vs. CAPACITIVE LOAD
(PUSH-PULL DRIVING ONE I/O VL)
L SUPPLY CURRENT (
MAX13046E/7E toc071020304050
VCC DYNAMIC SUPPLY CURRENT
vs. CAPACITIVE LOAD
(PUSH-PULL DRIVING ONE I/O VL)
SUPPLY CURRENT (
MAX13046E/7E toc081020304050
RISE/FALL TIME vs. CAPACITIVE LOAD
(PUSH-PULL DRIVING ONE I/O VL)
RISE/FALL TIME (ns)
MAX13046E/7E toc091020304050
tFVCC
tRVCC
MAX13046E/MAX13047E
Single- and Dual-Bidirectional
Low-Level Translator
Typical Operating Characteristics (continued)(VCC= +3.3V, VL= +1.8V, RL= 1MΩ, CL= 15pF, push-pull driving data rate = 8Mbps, TA= +25°C, unless otherwise noted.)
PROPAGATION DELAY vs. CAPACITIVE LOAD
(PUSH-PULL DRIVING ONE I/O VL)CAPACITIVE LOAD (pF)
PROPAGATION DELAY (ns)
MAX13046E/7E toc101020304050
RISE/FALL TIME vs. CAPACITIVE LOAD
(PUSH-PULL DRIVING ONE I/O VCC)CAPACITIVE LOAD (pF)
RISE/FALL TIME (ns)
MAX13046E/7E toc111020304050
tRVL
tFVL
PROPAGATION DELAY vs. CAPACITIVE LOAD
(PUSH-PULL DRIVING ONE I/O VCC)CAPACITIVE LOAD (pF)
PROPAGATION DELAY (ns)
MAX13046E/7E toc121020304050
RAIL-TO-RAIL DRIVING
(DRIVING ONE I/O VL)
MAX13046E/7E toc13
25ns/div
I/O VL
I/O VCC
1V/div
1V/div
EXISTING SHUTDOWN MODEMAX13046E/7E toc14
250ns/div
I/O VL
I/O VCC
1V/div
2V/div
1V/div
SHDN
MAX13046E/MAX13047E
Detailed DescriptionThe MAX13046E/MAX13047E ±15kV ESD-protected
bidirectional level translators provide level shifting for
data transfer in a multivoltage system. The MAX13046E
is a single-channel translator and the MAX13047E is a
dual-channel translator. Externally applied voltages,
VCCand VL, set the logic level on either side of the
device. The MAX13046E/MAX13047E utilize a transmis-
sion-gate-based design to allow data translation in
either direction (VL↔ VCC) on any single data line. The
MAX13046E/MAX13047E accept VLfrom +1.1V to the
minimum of either +3.6V or (VCC + 0.3V) and VCCfrom
+1.65V to +5.5V, making these devices ideal for data
transfer between low-voltage ASICs/PLDs and higher
voltage systems.
The MAX13046E/MAX13047E feature a shutdown mode
that reduces supply current to less than 1µA thermal
short-circuit protection, and ±15kV ESD protection on the
VCCside for enhanced protection in applications that
route signals externally. The MAX13046E/MAX13047E
operate at a guaranteed data rate of 8Mbps when push-
pull driving is used. See the Functional Diagram.
Single- and Dual-Bidirectional
Low-Level Translator
MAX13046E Pin Description
MAX13046EFUNCTION
µDFNNAME1VLV L Inp ut S up p l y V ol tag e. Byp ass V L w i th a 0.1µF cer am i c cap aci tor l ocated as cl ose as p ossi b l e to the i np ut.GNDGroundI/O VLInput/Output. Referenced to VL.I/O VCCInput/Output. Referenced to VCC.SHDNS hutd ow n Inp ut. D r i ve S HD N hi g h to enab l e the d evi ce. D r i ve S HD N l ow to p ut the d evi ce i n shutd ow n m od e.
6VCCV CC Inp ut S up p l y V ol tag e. Byp ass V CC w i th a 1µF cer am i c cap aci tor l ocated as cl ose as p ossi b l e to the i np ut
for ful l E S D p r otecti on. If ful l E S D p r otecti on i s not r eq ui r ed , b yp ass V CC w i th a 0.1µF cer am i c cap aci tor .
MAX13047E Pin Description
MAX13047EFUNCTION
UTQFNNAMEI/O VL2Input/Output 2. Referenced to VL.
2VLVL Input Supply Voltage. Bypass VL with a 0.1µF ceramic capacitor located as close as possible to the
input.
3, 7N.C.Not Connected. Internally not connected.SHDNEnable Input. Drive SHDN high to enable the device. Drive SHDN low to put the device in shutdown mode.I/O VCC2Input/Output 2. Referenced to VCC.
6VCC
VCC Input Supply Voltage. Bypass VCC with a 1µF ceramic capacitor located as close as possible to the
input for full ESD protection. If full ESD protection is not required, bypass VCC with a 0.1µF ceramic
capacitor.I/O VCC1Input/Output 1. Referenced to VCC.GNDGroundI/O VL1Input/Output 1. Referenced to VL.EPExposed Pad. Connect EP to GND.
