MAT04 ,Matched Monolithic Quad TransistorCHARACTERISTICS (@ T = 25C unless otherwise noted. Each transistor is individually tested. For mat ..
MAT04EY ,Matched Monolithic Quad Transistorapplications where low noise and high gain are required.matching parameters (offset voltage, input ..
MAT04F ,Matched Monolithic Quad TransistorCHARACTERISTICS at TA = 25°C unless otherwise noted. Each transiétor is individually tested. For ma ..
MAT04FS ,Matched Monolithic Quad TransistorFEATURES PIN CONNECTIONSLow Offset Voltage: 200 V max14-Lead Cerdip (Y Suffix)High Current Gain: 4 ..
MAU2111 ,Silicon epitaxial planar typeElectrical Characteristics T = 25°C±3°CaParameter Symbol Conditions Min Typ Max UnitForward curren ..
MAV-11SM ,Circuits - MONOLITHIC AMPLIFIERS 50 Ohm
MAX3320BCAP ,2.85 V, up to 250kbp, true RS-232 transceiver with 4mA autoshutdown plus and power-on resetMAX3320A/B/L/T19-1253; Rev 0; 8/973V to 5.5V, up to 250kbps True RS-232 Transceiverwith 4µA AutoShu ..
MAX3320BEAP ,2.85 V, up to 250kbp, true RS-232 transceiver with 4mA autoshutdown plus and power-on resetFeaturesThe MAX3320 combines a microprocessor (µP) super-' Precise Monitoring of 5V and 3.3V Power- ..
MAX3320TCAP ,3.08 V, up to 250kbp, true RS-232 transceiver with 4mA autoshutdown plus and power-on resetGeneral Description ________
MAX3320TCAP+T ,3V to 5.5V, Up to 250kbps True RS-232 Transceiver with 4µA AutoShutdown Plus and Power On ResetApplications ______________Ordering InformationPalmtop ComputersPART* TEMP. RANGE PIN-PACKAGEPortab ..
MAX3320TEAP ,3.08 V, up to 250kbp, true RS-232 transceiver with 4mA autoshutdown plus and power-on resetApplications ______________Ordering InformationPalmtop ComputersPART* TEMP. RANGE PIN-PACKAGEPortab ..
MAX3322EEUP ,±15kV ESD-Protected, RS-232 Transceivers for Multidrop ApplicationsFeaturesThe MAX3322E/MAX3323E 3.0V to 5.5V powered Pin-Selectable 5kΩ /High-Impedance Receivers EI ..
MAT04
Matched Monolithic Quad Transistor
REV.D
Matched Monolithic
Quad Transistor
PIN CONNECTIONS
14-Lead Cerdip (Y Suffix)
14-Lead Plastic DIP (P Suffix)
14-Lead SO (S Suffix)
FEATURES
Low Offset Voltage: 200 �V max
High Current Gain: 400 min
Excellent Current Gain Match: 2% max
Low Noise Voltage at 100 Hz, 1 mA: 2.5 nV/√Hz max
Excellent Log Conformance: rBE = 0.6 � max
Matching Guaranteed for All Transistors
Available in Die Form
PRODUCT DESCRIPTIONThe MAT04 is a quad monolithic NPN transistor that offers ex-
cellent parametric matching for precision amplifier and nonlin-
ear circuit applications. Performance characteristics of the
MAT04 include high gain (400 minimum) over a wide range of
collector current, low noise (2.5 nV/√Hz maximum at 100 Hz,
IC = 1 mA) and excellent logarithmic conformance. The
MAT04 also features a low offset voltage of 200 µV and tight
current gain matching, to within 2%. Each transistor of the
MAT04 is individually tested to data sheet specifications. For
matching parameters (offset voltage, input offset current, and
gain match), each of the dual transistor combinations are
verified to meet stated limits. Device performance is guaranteed
at 25°C and over the industrial and military temperature ranges.
The long-term stability of matching parameters is guaranteed by
the protection diodes across the base-emitter junction of each
transistor. These diodes prevent degradation of beta and match-
ing characteristics due to reverse bias base-emitter current.
The superior logarithmic conformance and accurate matching
characteristics of the MAT04 makes it an excellent choice for
use in log and antilog circuits. The MAT04 is an ideal choice in
applications where low noise and high gain are required.
ELECTRICAL CHARACTERISTICS(@ TA = 25�C unless otherwise noted. Each transistor is individually tested. For matching
parameters (VOS, IOS, ∆hFE) each dual transistor combination is verified to meet stated limits. All tests made at endpoints unless otherwise noted.)NOTESCurrent gain measured at IC = 10 µA, 100 µA and 1 mA.Current gain match is defined as: Measured at IC = 10 µA and guaranteed by design over the specified range of IC.Guaranteed by design.Sample tested.
Specifications subject to change without notice.
MAT04–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS(at –25�C ≤ TA � 85�C for MAT04E, –40�C ≤ TA � 85�C for MAT04F, unless
otherwise noted. Each transistor is individually tested. For matching parameters (VOS, IOS) each dual transistor combination is
verified to meet stated limits. All tests made at endpoints unless otherwise noted.)Input Bias Current
Input Offset Current
Average Offset
Breakdown Voltage
Collector-Base
MAT04
MAT04
ABSOLUTE MAXIMUM RATINGS1Collector-Base Voltage (BVCBO) . . . . . . . . . . . . . . . . . . . 40 V
Collector-Emitter Voltage (BVCEO) . . . . . . . . . . . . . . . . . 40 V
Collector-Collector Voltage (BVCC) . . . . . . . . . . . . . . . . .40 V
Emitter-Emitter Voltage (BVEE) . . . . . . . . . . . . . . . . . . . 40 V
Collector Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30 mA
Emitter Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30 mA
Substrate (Pin-4 to Pin-11) Current . . . . . . . . . . . . . . .30 mA
Operating Temperature Range
MAT04EY . . . . . . . . . . . . . . . . . . . . . . . . .–25°C to +85°C
MAT04FY, FP, FS . . . . . . . . . . . . . . . . . . .–40°C to +85°C
Storage Temperature
Y Package . . . . . . . . . . . . . . . . . . . . . . . . .–65°C to +150°C
P Package . . . . . . . . . . . . . . . . . . . . . . . . .–65°C to +125°C
Lead Temperature (Soldering, 60 sec) . . . . . . . . . . . .+300°C
NOTESAbsolute maximum ratings apply to both DICE and packaged parts, unless
otherwise noted.�JA is specified for worst case mounting conditions, i.e., �JA is specified for
device in socket for cerdip and P-DIP packages; �JA is specified for device
soldered to printed circuit board for SO package.
ORDERING GUIDENOTES
*Not for new designs; obsolete April 2002.
CAUTIONESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the MAT04 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
DICE CHARACTERISTICSDie Size 0.060 × 0.060 Inch, 3600 Sq. mm
(1.52 × 1.52 mm, 2.31 sq. mm)
Q1 COLLECTORQ1 BASEQ1 EMITTERSUBSTRATEQ2 EMITTERQ2 BASEQ2 COLLECTORQ3 COLLECTORQ3 BASE
10.Q3 EMITTER
11.SUBSTRATE
12.Q4 EMITTER
13.Q4 BASE
14.Q4 COLLECTOR
TPC 1.Current Gain
vs. Collector Current
TPC 4.Base-Emitter-On-Voltage
vs. Collector Current
TPC 7.Saturation Voltage vs.
Collector Current
TPC 2.Current Gain
vs. Temperature
TPC 5.Small Signal Input Resistance
(hie) vs. Collector Current
TPC 8.Noise Voltage Density
vs. Frequency
TPC 3.Gain Bandwidth vs.
Collector Current
TPC 6.Small Signal Output
Conductance vs. Collector Current
TPC 9.Noise Voltage Density
vs. Collector Current
