MAT01GH ,Matched Monolithic Dual TransistorCHARACTERISTICS (@ V = 15 V, I = 10 mA, T = 258C, unless otherwise noted.)CB C A MAT01AH ..
MAT03EH ,Low Noise, Matched Dual PNP TransistorCHARACTERISTICS1ABSOLUTE MAXIMUM RATINGS1. COLLECTOR (1 ) Collector-Base Voltage (BV ) . . . . . . ..
MAT03FH ,Low Noise, Matched Dual PNP TransistorCHARACTERISTICS A MAT03E MAT03FParameter Symbol Conditions Min Typ Max Min Typ Max UnitsCurrent Gai ..
MAT04 ,Matched Monolithic Quad TransistorCHARACTERISTICS (@ T = 25C unless otherwise noted. Each transistor is individually tested. For mat ..
MAT04EY ,Matched Monolithic Quad Transistorapplications where low noise and high gain are required.matching parameters (offset voltage, input ..
MAT04F ,Matched Monolithic Quad TransistorCHARACTERISTICS at TA = 25°C unless otherwise noted. Each transiétor is individually tested. For ma ..
MAX3319ECAE+ ,±15kV ESD-Protected, 2.5V, 1µA, 460kbps, RS-232-Compatible TransceiversFeaturesThe MAX3316E–MAX3319E are 2.5V powered RS-232♦ ESD Protection for RS-232 I/O Pinscompatible ..
MAX3319EEAE ,【15kV ESD-Protected, 2.5V, 1レA, 460kbps, RS-232 Compatible TransceiversELECTRICAL CHARACTERISTICS(V = +2.25V to +3.0V, C1–C4 = 0.1µF, T = T to T , unless otherwise noted. ..
MAX3319EEAE+ ,±15kV ESD-Protected, 2.5V, 1µA, 460kbps, RS-232-Compatible TransceiversFeaturesThe MAX3316E–MAX3319E are 2.5V powered RS-232♦ ESD Protection for RS-232 I/O Pinscompatible ..
MAX3320ACAP ,4.25 V, up to 250kbp, true RS-232 transceiver with 4mA autoshutdown plus and power-on resetELECTRICAL CHARACTERISTICS(V = 3V to 5.5V, C1–C4 = 0.1µF (tested at 3.3V ±10%), C1 = 0.047µF, C2–C4 ..
MAX3320BCAP ,2.85 V, up to 250kbp, true RS-232 transceiver with 4mA autoshutdown plus and power-on resetMAX3320A/B/L/T19-1253; Rev 0; 8/973V to 5.5V, up to 250kbps True RS-232 Transceiverwith 4µA AutoShu ..
MAX3320BEAP ,2.85 V, up to 250kbp, true RS-232 transceiver with 4mA autoshutdown plus and power-on resetFeaturesThe MAX3320 combines a microprocessor (µP) super-' Precise Monitoring of 5V and 3.3V Power- ..
MAT01AH-MAT01GH
Matched Monolithic Dual Transistor
REV.A
Matched Monolithic
Dual Transistor
FEATURES
Low VOS (VBE Match): 40 mV typ, 100 mV max
Low TCVOS: 0.5 mV/8C max
High hFE: 500 min
Excellent hFE Linearity from 10 nA to 10 mA
Low Noise Voltage: 0.23 mV p-p—0.1 Hz to 10 Hz
High Breakdown: 45 V min
Available in Die Form
PRODUCT DESCRIPTIONThe MAT01 is a monolithic dual NPN transistor. An exclusive
Silicon Nitride “Triple-Passivation” process provides excellent
stability of critical parameters over both temperature and time.
Matching characteristics include offset voltage of 40 mV, tem-
perature drift of 0.15 mV/°C, and hFE matching of 0.7%. Very
high hFE is provided over a six decade range of collector current,
including an exceptional hFE of 590 at a collector current of only
10 nA. The high gain at low collector current makes the
MAT01 ideal for use in low power, low level input stages.
PIN CONNECTION
TO-78
(H Suffix)
NOTE: Substrate is connected to case.
BURN-IN CIRCUIT
MAT01–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS(@ VCB = 15 V, IC = 10 mA, TA = 258C, unless otherwise noted.)
ELECTRICAL CHARACTERISTICS
(@ VCB = 15 V, IC = 10 mA, –558C £ TA £ +1258C, unless otherwise noted.)
TYPICAL ELECTRICAL CHARACTERISTICS
(@ VCB = 15 V and IC = 10 mA, TA = +258C, unless otherwise noted.)NOTESExclude first hour of operation to allow for stabilization.Parameter describes long-term average drift after first month of operation.Sample tested.The collector-base (ICBO) and collector-emitter (ICES) leakage currents may be
reduced by a factor of two to ten times by connecting the substrate (package) to
a potential which is lower than either collector voltage.ICC and ICES are guaranteed by measurement of ICBO.
6Guaranteed by VOS test (TCVOS @ Guaranteed by IOS test limits over temperature.
Specifications subject to change without notice.
MAT01
WAFER TEST LIMITSOffset Current
Bias Current
Current Gain
Current Gain Match
Offset Voltage Change
NOTE
Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not
guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.
(@ VCB = 15 V, IC = 10 mA, TA = +258C, unless otherwise noted.)
MAT01
ABSOLUTE MAXIMUM RATINGS1Collector-Base Voltage (BVCBO)
MAT01AH, GH, N . . . . . . . . . . . . . . . . . . . . . . . . . . .45 V
Collector-Emitter Voltage (BVCEO)
MAT01AH, GH, N . . . . . . . . . . . . . . . . . . . . . . . . . . .45 V
Collector-Collector Voltage (BVCC)
MAT01AH, GH, N . . . . . . . . . . . . . . . . . . . . . . . . . . .45 V
Emitter-Emitter Voltage (BVEE)
MAT01AH, GH, N . . . . . . . . . . . . . . . . . . . . . . . . . . .45 V
Emitter-Base Voltage (BVEBO)2 . . . . . . . . . . . . . . . . . . . . .5 V
Collector Current (IC) . . . . . . . . . . . . . . . . . . . . . . . . . .25 mA
Emitter Current (IE) . . . . . . . . . . . . . . . . . . . . . . . . . .25 mA
Total Power Dissipation
Case Temperature £ 40°C3 . . . . . . . . . . . . . . . . . . . .1.8 W
Ambient Temperature £ 70°C4 . . . . . . . . . . . . . . .500 mW
Operating Ambient Temperature . . . . . . . . .–55°C to +125°C
Operating Junction Temperature . . . . . . . . .–55°C to +150°C
Storage Temperature . . . . . . . . . . . . . . . . . .–65°C to +150°C
Lead Temperature (Soldering, 60 sec) . . . . . . . . . . . .+300°C
DICE Junction Temperature . . . . . . . . . . . .–65°C to +150°C
NOTES
1Absolute maximum ratings apply to both DICE and packaged devices.
2Application of reverse bias voltages in excess of rating shown can result in
degradation of hFE and hFE matching characteristics. Do not attempt to measure
BVEBO greater than the 5 V rating shown.
3Rating applies to applications using heat sinking to control case temperature.
Derate linearity at 16.4 mW/°C for case temperatures above 40°C.
4Rating applies to applications not using heat sinking; device in free air only. Derate
linearity at 6.3 mW/°C for ambient temperatures above 70°C.
ORDERING GUIDE1NOTESBurn-in is available on commercial and industrial temperature range parts in
TO-can packages.For devices processed in total compliance to MIL-STD-883, add/883 after part
number. Consult factory for 883 data sheet.
CAUTIONESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the MAT01 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
DICE CHARACTERISTICSDIE SIZE 0.035 · 0.025 inch, 875 sq. mils
(0.89 · 0.64 mm, 0.58 sq. mm)
COLLECTOR (1)BASE (1)EMITTER (1)EMITTER (2)BASE (2)COLLECTOR (2)
Figure 1.Offset Voltage
vs. Temperature
Figure 2.Current Gain
vs. Collector Current
Figure 3.Noise Voltage
Figure 7.Base-Emitter Voltage
vs. Collector Current
Figure 8.Saturation Voltage
vs. Collector Current
Figure 9.Gain-Bandwidth
vs. Collector Current
Figure 4.Offset Voltage vs. Time
Figure 5.Current Gain
vs. Temperature
Figure 6.Noise Current Density
MAT01
MAT01 TEST CIRCUITS
Figure 10.MAT01 Matching Measurement Circuit
Figure 11.MAT01 Noise Measurement Circuit
