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M74HCU04B1R-M74HCU04M1R-M74HCU04RM13TR-M74HCU04TTR
HEX INVERTER (SINGLE STAGE)
1/8April 2002 HIGH SPEED:
tPD = 5ns (TYP .) at VCC = 6V LOW POWER DISSIPATION:CC = 1μA(MAX.) at TA =25°C HIGH NOISE IMMUNITY:NIH = VNIL = 10% VCC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE:
|IOH| = IOL = 4mA (MIN) BALANCED PROPAGATION DELAYS:
tPLH ≅ tPHL WIDE OPERATING VOLTAGE RANGE:CC (OPR) = 2V to 6V PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 04
DESCRIPTIONThe M74HCU04 is an high speed CMOS HEX
INVERTER (SINGLE STATE) fabricated with
silicon gate C2 MOS technology.
As internal circuit is composed of a single stage
inverter, it can be used in crystal oscillator.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
M74HCU04HEX INVERTER (SINGLE STATE)
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
M74HCU042/8
INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65 °C; derate to 300mW by 10mW/°C from 65°C to 85°C
RECOMMENDED OPERATING CONDITIONS
M74HCU043/8
DC SPECIFICATIONS
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6ns)
CAPACITIVE CHARACTERISTICS 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC
M74HCU044/8
TEST CIRCUIT CL = 50pF or equivalent (includes jig and probe capacitance)
RT = ZOUT of pulse generator (typically 50Ω)
WAVEFORM : PROPAGATION DELAY TIME (f=1MHz; 50% duty cycle)
