M74HCT652B1R ,OCTAL BUS TRANSCEIVER/REGISTERABSOLUTE MAXIMUM RATINGS Symbol Parameter Value UnitV Supply Voltage-0.5 to +7 VCCV DC Input V ..
M74HCT652M1R ,OCTAL BUS TRANSCEIVER/REGISTERLOGIC DIAGRAM TIMING CHART 3/13M74HCT652
M74HCT652M1R ,OCTAL BUS TRANSCEIVER/REGISTERM74HCT652OCTAL BUS TRANSCEIVER/REGISTERWITH 3 STATE OUTPUTS ■ HIGH SPEED: ..
M74HCT688RM13TR ,8 BIT EQUALITY COMPARATORM74HCT6888 BIT EQUALITY COMPARATOR ■ HIGH SPEED:t = 21ns (TYP.) at V = 4.5VPD CC■ LOW POWER DISSIP ..
M74HCT7007M1R ,HEX BUFFERAbsolute Maximum Ratings are those values beyond which damage to the device may occur. Functional o ..
M74HCT7007RM13TR ,HEX BUFFERM74HCT7007HEX BUFFER ■ HIGH SPEED: t = 14ns (TYP.) at V =4.5VPD CC■ LOW POWER DISSIPATION:I = 1μA( ..
MAX1535CETJ+ ,Highly Integrated Level 2 SMBus Battery Chargersfeatures. The maximum♦ 6-Bit Input and Charge-Current Resolutioncurrent drawn from the AC adapter i ..
MAX1535CETJ+T ,Highly Integrated Level 2 SMBus Battery ChargersFeaturesThe MAX1535B/MAX1535C/MAX1535D are highly inte-♦ Compliant with Level 2 Smart-Battery-Charg ..
MAX1536ETI ,3.6A, 1.4MHz, Low-Voltage, Internal-Switch Step-Down Regulator with Dynamic Output Voltage ControlApplicationso oMAX1536ETI -40 C to +85 C 28 Thin QFN 5mm x 5mmChipset/Graphics Cores Notebook Compu ..
MAX1536ETI+T ,3.6A, 1.4MHz, Low-Voltage, Internal-Switch Step-Down Regulator with Dynamic Output Voltage ControlApplicationso oMAX1536ETI -40 C to +85 C 28 Thin QFN 5mm x 5mmChipset/Graphics Cores Notebook Compu ..
MAX1538ETI ,4.75 to 28 V,power-source selector for dual-battery systemFeaturesThe MAX1538 selector provides power-source control ♦ Automatically Detects and Responds tof ..
MAX1538ETI+ ,Power-Source Selector for Dual-Battery SystemsELECTRICAL CHARACTERISTICS(V = V = V = 16.8V, C = 1µF, V = V = 0.93V, V = V = 28V, V = V = V = 0,BA ..
M74HCT652B1R-M74HCT652M1R
OCTAL BUS TRANSCEIVER/REGISTER
1/13September 2001 HIGH SPEED:
fMAX = 55 MHz (TYP.) at VCC = 4.5V LOW POWER DISSIPATION:CC = 4μA(MAX.) at TA =25°C COMPATIBLE WITH TTL OUTPUTS : IH = 2V (MIN.) VIL = 0.8V (MAX) SYMMETRICAL OUTPUT IMPEDANCE:
|IOH| = IOL = 6mA (MIN) BALANCED PROPAGATION DELAYS:
tPLH ≅ tPHL PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 652
DESCRIPTIONThe 74HCT652 is an advanced high-speed
CMOS OCTAL BUS TRANSCEIVER AND
REGISTER (3-STATE) fabricated with silicon gate2 MOS technology.
This device consists of bus transceiver circuits,
D-type flip-flops, and control circuitry arranged for
multiplexed transmission of data directly from the
input bus or from the internal storage registers.
Enable GAB and GBA are provided to control the
transceiver functions. Select AB(SAB) and select
BA(SBA) control pins are provided to select
whether real-time or stored data is transferred. A
low input level selects real-time data, and a high
selects stored data.
Data on the A or B bus, or both, can be stored in
the internal D flip-flops by low-to-high transition at
the appropriate clock pins (CLOCK AB or CLOCK
BA) regardless of the select or enable control pins.
When select AB and select BA are in the real time
transfer mode, it is also possible to store data
without using the internal D type flip-flops by
simultaneously enabling GAB and GBA. In this
configuration each output reinforces its input.
Thus, when all other data sources to the two sets
of bus lines are at high impedance, each set of
bus lines will remain at its last state.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
M74HCT652OCTAL BUS TRANSCEIVER/REGISTER
WITH 3 STATE OUTPUTS
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
M74HCT6522/13
INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE
M74HCT6523/13
X : Don’t Care
Z : High Impedance
Qn : The data stored to the internal flip-flops by most recent low to high transition of the clock inputs
* : The data at the A and B bus will be stored to the internal flip-flops on every low to high transition of the clock inputs.
LOGIC DIAGRAM
TIMING CHART
M74HCT6524/13
ABSOLUTE MAXIMUM RATINGS Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65 °C; derate to 300mW by 10mW/°C from 65°C to 85°C
RECOMMENDED OPERATING CONDITIONS
M74HCT6525/13
DC SPECIFICATIONS (*) Applicable Only to GAB, GBA, CAB, CBA, SAB, SBA Input
M74HCT6526/13
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6ns)
CAPACITIVE CHARACTERISTICS 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/8 (per
channel)
M74HCT6527/13
TEST CIRCUIT CL = 50pF/150pF or equivalent (includes jig and probe capacitance)
R1 = 1KΩ or equivalent
RT = ZOUT of pulse generator (typically 50Ω)
WAVEFORM 1 : PROPAGATION DELAY TIME(f=1MHz; 50% duty cycle)
