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M74HC86B1
QUAD EXCLUSIVE OR GATE
4HC86M74HC86QUAD EXCLUSIVE OR GATE
B1R(Plastic Package)
ORDER CODES:M54HC86F1R M74HC86M1R
M74HC86B1R M74HC86C1R
F1R(CeramicPackage)
M1R(MicroPackage)
C1R(Chip Carrier)
PIN CONNECTIONS (top view)= Internal
INPUT AND OUTPUT EQUIVALENT CIRCUIT HIGH SPEED
tPD=10ns (TYP.) AT VCC =5V. LOWPOWER DISSIPATION
ICC =1 μA (MAX.) ATTA =25°C. HIGH NOISE IMMUNITY
VNIH =VNIL =28% VCC (MIN.). OUTPUT DRIVE CAPABILITY LSTTL LOADS. SYMMETRICAL OUTPUT IMPEDANCE
IOH =IOL=4 mA (MIN.). BALANCEDPROPAGATION DELAYS
tPLH =tPHL. WIDE OPERATING VOLTAGE RANGE
VCC (OPR)=2V TO6V. PIN AND FUNCTION COMPATIBLE
WITH 54/74LS86
The M54/74HC86isa high speed CMOS QUAD
EXCLUSIVE OR GATE fabricatedin silicon gate2 MOS technology. has the same high speed performanceof LSTTL
combined with true CMOS low power consumption.
Input and output buffer are installed, which enables
high noise immunity and stable output.
All inputs are equipped with protection circuits
against static discharge and transient excess volt-
age.
DESCRIPTION
TRUTH TABLE Y L H
HLH
HHL
PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION4,9,12 1Ato4A Data Inputs5, 10,13 1Bto4B Data Inputs6,8,11 1Yto4Y Data Outputs GND Ground (0V) VCC Positive Supply Voltage
IEC LOGIC SYMBOL
SCHEMATIC CIRCUIT (Per Gate)
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value UnitVCC Supply Voltage -0.5to+7 V DC Input Voltage -0.5to VCC+ 0.5 V DC Output Voltage -0.5to VCC+ 0.5 V
IIK DC Input Diode Current ±20 mA
IOK DC Output Diode Current ±20 mA DC Output Source Sink Current Per Output Pin ±25 mA
ICCor IGND DC VCCor Ground Current ±50 mA Power Dissipation 500(*) mW
Tstg Storage Temperature -65to +150 oC Lead Temperature (10 sec) 300 oC
M54/M74HC86
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value UnitVCC Supply Voltage 2to6 V Input Voltage 0to VCC V Output Voltage 0to VCC V
Top Operating Temperature:
M54HC Series
M74HC Series
-55to +125
-40to +85CC
tr,tf Input Rise and Fall Time VCC=2V 0to 1000 ns
VCC=4.5V 0to 500
VCC=6V 0to 400
SPECIFICATIONS
Symbol Parameter
Test Conditions Value
UnitVCC(V)
=25oC
54HC and 74HC
-40to85oC
74HC
-55to 125oC
54HC
Min. Typ. Max. Min. Max. Min. Max.VIH High Level Input
Voltage
2.0 1.5 1.5 1.54.5 3.15 3.15 3.15
6.0 4.2 4.2 4.2
VIL Low Level Input
Voltage
2.0 0.5 0.5 0.54.5 1.35 1.35 1.35
6.0 1.8 1.8 1.8
VOH High Level
Output Voltage
2.0 VI=
VIH
VIL
IO=-20μA
1.9 2.0 1.9 1.94.5 4.4 4.5 4.4 4.4
6.0 5.9 6.0 5.9 5.9
4.5 IO=-4.0 mA 4.18 4.31 4.13 4.10
6.0 IO=-5.2 mA 5.68 5.8 5.63 5.60
VOL Low Level Output
Voltage
2.0 VI=
VIH
VIL
IO=20μA
0.0 0.1 0.1 0.14.5 0.0 0.1 0.1 0.1
6.0 0.0 0.1 0.1 0.1
4.5 IO= 4.0 mA 0.17 0.26 0.33 0.40
6.0 IO= 5.2 mA 0.18 0.26 0.33 0.40 Input Leakage
Current 6.0 VI =VCCor GND ±0.1 ±1 ±1 μA
ICC Quiescent Supply
Current
6.0 VI =VCCor GND 1 10 20 μA
M54/M74HC86
ELECTRICAL CHARACTERISTICS (CL =50 pF, Inputtr =tf =6 ns)
Symbol Parameter
Test Conditions Value
UnitVCC(V)
=25oC
54HC and 74HC
-40to85oC
74HC
-55to 125oC
54HC
Min. Typ. Max. Min. Max. Min. Max.tTLH
tTHL
Output Transition
Time
2.0 30 75 95 1104.5 8 151922
6.0 7 131619
tPLH
tPHL
Propagation
Delay Time
2.0 56 110 140 1654.5 14 22 28 33
6.0 12 19 24 28
CIN Input Capacitance 5 10 10 10 pF
CPD(*) Power Dissipation
Capacitance pF
(*) CPD isdefinedasthe valueofthe IC’sinternal equivalent capacitance which iscalculated fromthe operatingcurrent consumption without load.
(Referto Test Circuit).Average operting currentcanbe obtained bythefollowingequation. ICC(opr)=CPD •VCC •fIN+ICC/4(per Gate)
SWITCHING CHARACTERISTICS TEST CIRCUIT
TEST CIRCUIT ICC (Opr.)
M54/M74HC86
Plastic DIP14 MECHANICAL DATA
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX. 0.51 0.020 1.39 1.65 0.055 0.065 0.5 0.020 0.25 0.010 20 0.787 8.5 0.335 2.54 0.100 15.24 0.600 7.1 0.280 5.1 0.201 3.3 0.130 1.27 2.54 0.050 0.100
M54/M74HC86
Ceramic DIP14/1 MECHANICAL DATA
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX. 20 0.787 7.0 0.276 3.3 0.130 0.38 0.015 15.24 0.600 2.29 2.79 0.090 0.110 0.4 0.55 0.016 0.022 1.17 1.52 0.046 0.060 0.22 0.31 0.009 0.012 1.52 2.54 0.060 0.100 10.3 0.406 7.8 8.05 0.307 0.317 5.08 0.200
M54/M74HC86