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M74HC4049M1R
HEX BUFFER/CONVERTER (INVERTER)
1/8July 2001 HIGH SPEED:
tPD = 8ns (TYP .) at VCC =6V LOW POWER DISSIPATION:CC = 1μA(MAX.) at TA =25°C HIGH NOISE IMMUNITY:NIH = VNIL = 28 % VCC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE:
|IOH| = IOL = 6mA (MIN) BALANCED PROPAGATION DELAYS:
tPLH ≅ tPHL WIDE OPERATING VOLTAGE RANGE:CC (OPR) = 2V to 6V PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 4049
DESCRIPTIONThe M74HC4049 is an high speed CMOS HEX
BUFFER (INVERTING) fabricated with silicon
gate C2 MOS technology.
The internal circuit is composed of 2 stage
inverters, which enables high noise immunity and
a stable output.
Input protection circuits are different from those of
the high speed CMOS IC’s.
The Vcc side diodes are designed to allow
logic-level conversion from high-level voltages (up
to 13V) to low level voltages.
M74HC4049HEX BUFFER/CONVERTER (INVERTER)
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
M74HC40492/8
INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65 °C; derate to 300mW by 10mW/°C from 65°C to 85°C
RECOMMENDED OPERATING CONDITIONS
M74HC40493/8
DC SPECIFICATIONS
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6ns)
M74HC40494/8
CAPACITIVE CHARACTERISTICS 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/6 (per gate)
TEST CIRCUIT CL = 50pF or equivalent (includes jig and probe capacitance)
RT = ZOUT of pulse generator (typically 50Ω)
WAVEFORM : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)
