M74HC30B1R ,8 INPUT NAND GATEM74HC308-INPUT NAND GATE ■ HIGH SPEED: t = 13ns (TYP.) at V = 6VPD CC■ LOW POWER DISSIPATION:I = 1 ..
M74HC30M1R ,8 INPUT NAND GATEAbsolute Maximum Ratings are those values beyond which damage to the device may occur. Functional o ..
M74HC32 ,QUAD 2-INPUT OR GATEM74HC32QUAD 2-INPUT OR GATE ■ HIGH SPEED:t = 8ns (TYP.) at V = 6VPD CC■ LOW POWER DISSIPATION:I = ..
M74HC32 ,QUAD 2-INPUT OR GATEAbsolute Maximum Ratings are those values beyond which damage to the device may occur. Functional o ..
M74HC32B1 ,QUAD 2-INPUT OR GATEM74HC32QUAD 2-INPUT OR GATE ■ HIGH SPEED:t = 8ns (TYP.) at V = 6VPD CC■ LOW POWER DISSIPATION:I = ..
M74HC32M1R ,QUAD 2-INPUT OR GATEM74HC32QUAD 2-INPUT OR GATE ■ HIGH SPEED:t = 8ns (TYP.) at V = 6VPD CC■ LOW POWER DISSIPATION:I = ..
MAX1422ECM ,12-Bit, 20Msps, 3.3V, Low-Power ADC with Internal ReferenceELECTRICAL CHARACTERISTICS(V = V = 3.3V, AGND = DGND = 0, V = ±1.024V, differential input voltage a ..
MAX1425EAI ,10-Bit / 20Msps ADCApplicationsPin ConfigurationMedical Ultrasound ImagingTOP VIEWCCD Pixel ProcessingIR Focal Plane A ..
MAX1426EAI ,10-Bit / 10Msps ADCApplicationsPin ConfigurationMedical Ultrasound ImagingTOP VIEWCCD Pixel ProcessingIR Focal Plane A ..
MAX1426EAI-T ,10-Bit, 10Msps ADCApplicationsPin ConfigurationMedical Ultrasound ImagingCCD Pixel Processing TOP VIEW+IR Focal Plane ..
MAX1444EHJ ,10-Bit / 40Msps / 3.0V / Low-Power ADC with Internal ReferenceELECTRICAL CHARACTERISTICS(V = 3V; OV = 2.7V; 0.1µF and 1µF capacitors from REFP, REFN, and COM to ..
MAX1446EHJ+ ,10-Bit, 60Msps, 3.0V, Low-Power ADC with Internal ReferenceELECTRICAL CHARACTERISTICS(V = 3.0V, OV = 2.7V; 0.1µF and 1.0µF capacitors from REFP, REFN, and COM ..
M74HC30B1R-M74HC30M1R
8 INPUT NAND GATE
1/8July 2001 HIGH SPEED:
tPD = 13ns (TYP.) at VCC = 6V LOW POWER DISSIPATION:CC = 1μA(MAX.) at TA =25°C HIGH NOISE IMMUNITY:NIH = VNIL = 28 % VCC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE:
|IOH| = IOL = 4mA (MIN) BALANCED PROPAGATION DELAYS:
tPLH ≅ tPHL WIDE OPERATING VOLTAGE RANGE:CC (OPR) = 2V to 6V PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 30
DESCRIPTIONThe M74HC30 is an high speed CMOS 8-INPUT
NAND GATE fabricated with silicon gate C2 MOS
technology.
The internal circuit is composed of 5 stages
including buffer output, which enables high noise
immunity and stable output.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
M74HC308-INPUT NAND GATE
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
M74HC302/8
INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65 °C; derate to 300mW by 10mW/°C from 65°C to 85°C
RECOMMENDED OPERATING CONDITIONS
M74HC303/8
DC SPECIFICATIONS
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6ns)
CAPACITIVE CHARACTERISTICS 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC
M74HC304/8
TEST CIRCUIT CL = 50pF or equivalent (includes jig and probe capacitance)
RT = ZOUT of pulse generator (typically 50Ω)
WAVEFORM : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)
