M74HC20B1R ,DUAL 4-INPUT NAND GATEABSOLUTE MAXIMUM RATINGS Symbol Parameter Value UnitV Supply Voltage-0.5 to +7 VCCV DC Input V ..
M74HC20B1R ,DUAL 4-INPUT NAND GATEAbsolute Maximum Ratings are those values beyond which damage to the device may occur. Functional o ..
M74HC20M1R ,DUAL 4-INPUT NAND GATEM74HC20DUAL 4-INPUT NAND GATE ■ HIGH SPEED: t = 9ns (TYP.) at V = 6VPD CC■ LOW POWER DISSIPATION:I ..
M74HC21B1 ,DUAL 4-INPUT AND GATEM74HC21DUAL 4-INPUT AND GATE ■ HIGH SPEED:t = 11ns (TYP.) at V = 6VPD CC■ LOW POWER DISSIPATION:I ..
M74HC21B1 ,DUAL 4-INPUT AND GATEAbsolute Maximum Ratings are those values beyond which damage to the device may occur. Functional o ..
M74HC21B1R ,DUAL 4-INPUT AND GATEAbsolute Maximum Ratings are those values beyond which damage to the device may occur. Functional o ..
MAX1340BETX+ ,12-Bit, Multichannel ADCs/DACs with FIFO, Temperature Sensing, and GPIO PortsFeatures♦ Internal Reference or External Single-Ended/such as an internal ±1°C accurate temperature ..
MAX13412EESA+ ,RS-485 Transceiver with Integrated Low-Dropout Regulator and AutoDirection Controlapplications, this reduces the cost and size of the sys-tem by reducing the number of optical isola ..
MAX1342BETX ,4.096 V, 12-bit, multichannel ADC/DAC with FIFO, temperature sensing, and GPIO portELECTRICAL CHARACTERISTICS(AV = DV = 2.7V to 3.6V (MAX1341/MAX1343/MAX1347/MAX1349), external refer ..
MAX1342BETX+ ,12-Bit, Multichannel ADCs/DACs with FIFO, Temperature Sensing, and GPIO PortsELECTRICAL CHARACTERISTICS(AV = DV = 4.75V to 5.25V, external reference V = 4.096V, f = 3.6MHz (50% ..
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M74HC20B1R-M74HC20M1R
DUAL 4-INPUT NAND GATE
1/8July 2001 HIGH SPEED:
tPD = 9ns (TYP .) at VCC = 6V LOW POWER DISSIPATION:CC = 1μA(MAX.) at TA =25°C HIGH NOISE IMMUNITY:NIH = VNIL = 28 % VCC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE:
|IOH| = IOL = 4mA (MIN) at VCC = 4.5V BALANCED PROPAGATION DELAYS:
tPLH ≅ tPHL WIDE OPERATING VOLTAGE RANGE:CC (OPR) = 2V to 6V PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 20
DESCRIPTIONThe M74HC20 is an high speed CMOS DUAL
4-INPUT NAND GATE fabricated with silicon gate2 MOS technology.
The internal circuit is composed of 3-stage
including buffered output, which gives high noise
immunity and stable output.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
M74HC20DUAL 4-INPUT NAND GATE
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
M74HC202/8
INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65 °C; derate to 300mW by 10mW/°C from 65°C to 85°C
RECOMMENDED OPERATING CONDITIONS
M74HC203/8
DC SPECIFICATIONS
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6ns)
CAPACITANCE CHARACTERISTICS 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/2 (per gate)
M74HC204/8
TEST CIRCUIT CL = 50pF or equivalent (includes jig and probe capacitance)
RT = ZOUT of pulse generator (typically 50Ω)
WAVEFORM 1: PROPAGATION DELAY TIME (f=1MHz; 50% duty cycle)