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M74HC10B1R-M74HC10M1R-M74HC10RM13TR
TRIPLE 3-INPUT NAND GATE
1/8July 2001 HIGH SPEED:
tPD = 8ns (TYP .) at VCC = 6V LOW POWER DISSIPATION:CC = 1μA(MAX.) at TA =25°C HIGH NOISE IMMUNITY:NIH = VNIL = 28 % VCC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE:
|IOH| = IOL = 4mA (MIN) BALANCED PROPAGATION DELAYS:
tPLH ≅ tPHL WIDE OPERATING VOLTAGE RANGE:CC (OPR) = 2V to 6V PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 10
DESCRIPTIONThe M74HC10 is an high speed CMOS TRIPLE
3-INPUT NAND GATE fabricated with silicon gate2 MOS technology.
The internal circuit is composed of 3 stages
including buffer output, which enables high noise
immunity and stable output.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
M74HC10TRIPLE 3-INPUT NAND GATE
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
M74HC102/8
INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE X : Don‘t Care
ABSOLUTE MAXIMUM RATINGS Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65 °C; derate to 300mW by 10mW/°C from 65°C to 85°C
RECOMMENDED OPERATING CONDITIONS
M74HC103/8
DC SPECIFICATIONS
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6ns)
CAPACITIVE CHARACTERISTICS 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/3 (per gate)
M74HC104/8
TEST CIRCUIT CL = 50pF or equivalent (includes jig and probe capacitance)
RT = ZOUT of pulse generator (typically 50Ω)
WAVEFORM : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)
