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M59DR032EA10ZB6

32 MBIT (2MB X 16, DUAL BANK, PAGE) 1.8V SUPPLY FLASH MEMORY

Partnumber Manufacturer Quantity Availability
M59DR032EA10ZB6 2198 In Stock

Description and Introduction

32 MBIT (2MB X 16, DUAL BANK, PAGE) 1.8V SUPPLY FLASH MEMORY The part **M59DR032EA10ZB6** is a **32Mbit (4Mbit x8) 3V Supply Serial Flash Memory** manufactured by **STMicroelectronics**.  

### **Key Specifications:**  
- **Density:** 32Mbit (4Mbit x8)  
- **Interface:** SPI (Serial Peripheral Interface)  
- **Supply Voltage:** 2.7V to 3.6V  
- **Operating Temperature Range:** -40°C to +85°C  
- **Speed:** Up to 50MHz clock frequency  
- **Sector Architecture:** Uniform 4KB sectors  
- **Page Size:** 256 bytes  
- **Endurance:** 100,000 write/erase cycles per sector  
- **Data Retention:** 20 years  
- **Package:** SO8 (8-lead Small Outline)  

### **Features:**  
- **Low Power Consumption:**  
  - Active read current: 15mA (typical)  
  - Standby current: 1µA (typical)  
- **Flexible Erase Options:**  
  - Sector erase (4KB)  
  - Block erase (32KB, 64KB)  
  - Full chip erase  
- **Security Features:**  
  - Software and hardware write protection  
  - Unique 64-bit serial number  
- **Reliable Performance:**  
  - ECC (Error Correction Code) for data integrity  
  - Deep power-down mode for ultra-low power  

This memory is commonly used in **embedded systems, automotive, industrial, and consumer electronics** applications.  

Would you like any additional details?

Partnumber Manufacturer Quantity Availability
M59DR032EA10ZB6 ST 8383 In Stock

Description and Introduction

32 MBIT (2MB X 16, DUAL BANK, PAGE) 1.8V SUPPLY FLASH MEMORY The part **M59DR032EA10ZB6** is a **32 Mbit (4M x 8) Low Voltage Boot Block Flash Memory** manufactured by **STMicroelectronics (ST)**.  

### **Key Specifications:**  
- **Density:** 32 Mbit (4M x 8)  
- **Supply Voltage:** 2.7V to 3.6V  
- **Access Time:** 70 ns  
- **Sector Architecture:** Boot Block (asymmetric sectors)  
- **Operating Temperature Range:** -40°C to +85°C  
- **Package:** 48-ball TFBGA (6x8 mm)  

### **Features:**  
- **Low Power Consumption:**  
  - Active Read Current: 15 mA (typical)  
  - Standby Current: 10 µA (typical)  
- **Flexible Sector Erase:**  
  - Uniform 4 KB sectors  
  - Additional larger sectors for boot code  
- **Fast Programming & Erase:**  
  - Byte Programming: 20 µs (typical)  
  - Sector Erase: 0.7s (typical)  
  - Chip Erase: 15s (typical)  
- **Hardware & Software Data Protection:**  
  - Block locking for secure code storage  
  - WP# (Write Protect) pin for hardware protection  
- **Compatibility:**  
  - JEDEC-standard command set  
  - Compatible with x8 NOR Flash interfaces  

### **Applications:**  
- Embedded systems  
- Automotive electronics  
- Industrial control  
- Networking equipment  

This device is designed for high-performance, low-power applications requiring reliable non-volatile storage.  

*(Source: STMicroelectronics datasheet for M59DR032EA10ZB6.)*

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