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M59DR032A120ZB6T from ST,ST Microelectronics

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M59DR032A120ZB6T

Manufacturer: ST

32 MBIT (2MB X16, DUAL BANK) LOW VOLTAGE FLASH MEMORY

Partnumber Manufacturer Quantity Availability
M59DR032A120ZB6T ST 418 In Stock

Description and Introduction

32 MBIT (2MB X16, DUAL BANK) LOW VOLTAGE FLASH MEMORY The part **M59DR032A120ZB6T** is a **32 Mbit (4M x 8) Low Voltage Parallel NOR Flash Memory** manufactured by **STMicroelectronics (ST)**.  

### **Key Specifications:**  
- **Density:** 32 Mbit (4M x 8)  
- **Supply Voltage:** 2.7V to 3.6V  
- **Access Time:** 120 ns  
- **Interface:** Parallel (x8)  
- **Package:** TSOP48 (Thin Small Outline Package, 48 pins)  
- **Operating Temperature Range:** Industrial (-40°C to +85°C)  
- **Sector Architecture:** Uniform 64 KB sectors  

### **Features:**  
- **Low Power Consumption:**  
  - Active read current: 15 mA (typical)  
  - Standby current: 20 µA (typical)  
- **High Reliability:**  
  - 100,000 erase/program cycles per sector  
  - 20-year data retention  
- **Hardware & Software Data Protection:**  
  - Block protection via lock/unlock commands  
  - Power supply monitoring for write protection  
- **Compatibility:**  
  - JEDEC-standard command set  
  - Compatible with industry-standard parallel NOR Flash  

This device is commonly used in embedded systems, networking equipment, and industrial applications requiring reliable non-volatile memory.  

(Source: STMicroelectronics datasheet)

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