M58LW032D110N6 ,32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash MemoryM58LW032D32 Mbit (4Mb x8, 2Mb x16, Uniform Block)3V Supply Flash Memory
M58LW032D-110N6 ,32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash MemoryAbsolute Maximum Ratings . . . . . . . 23DC and AC PARAMETERS . 24Table 12. Operating an ..
M58LW032D110ZA6 ,32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash MemoryFEATURES SUMMARY . . . . . 1Figure 1. Packages . . . . . . 1SUMMARY DESCRIPTION ..
M58LW032D110ZA6 ,32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash MemoryLogic Diagram . . 6Table 1. Signal Names . . 6Figure 3. TSOP56 Connections . . ..
M58LW032D-110ZA6 ,32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash MemoryFEATURES SUMMARY WIDE x8 or x16 DATA BUS for HIGH Figure 1. PackagesBANDWIDTH SUPPLY VOLTAGE–V = ..
M58LW032D90N1 ,32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash MemoryLogic Diagram . . 6Table 1. Signal Names . . 6Figure 3. TSOP56 Connections . . ..
M95256-VMW6T ,256Kbit Serial SPI Bus EEPROM With High Speed ClockBlock Diagram . 11INSTRUCTIONS . . 12Table 5. Instruction Set . 12Write Enabl ..
M95256-WDW6TP ,256Kbit and 128Kbit Serial SPI Bus EEPROM With High Speed ClockM95256M95128256Kbit and 128Kbit Serial SPI Bus EEPROMWith High Speed Clock
M95256-WMN6 ,256Kbit and 128Kbit Serial SPI Bus EEPROM With High Speed ClockBlock Diagram . 11INSTRUCTIONS . . 12Table 5. Instruction Set . 12Write Enabl ..
M95256-WMN6P ,256Kbit and 128Kbit Serial SPI Bus EEPROM With High Speed ClockFEATURES . . . . 9Power-up . . . . . 9Power On Reset: VCC Lock-Out Write Protect ..
M95256-WMN6TP ,256Kbit and 128Kbit Serial SPI Bus EEPROM With High Speed ClockFEATURES . . . . 9Power-up . . . . . 9Power On Reset: VCC Lock-Out Write Protect ..
M95256-WMW6 ,256Kbit and 128Kbit Serial SPI Bus EEPROM With High Speed ClockFEATURES SUMMARY■ Compatible with SPI Bus Serial Interface Figure 1. Packages(Positive Clock SPI Mo ..
M58LW032D110N6-M58LW032D-110N6-M58LW032D110ZA6-M58LW032D-110ZA6-M58LW032D90N1-M58LW032D90ZA6-M58LW032D-90ZA6
32 MBIT (4MB X8, 2MB X16, UNIFORM BLOCK)3V SUPPLY FLASH MEMORY
1/50August 2004
M58LW032D32 Mbit (4Mb x8, 2Mb x16, Uniform Block)
3V Supply Flash Memory
FEATURES SUMMARY WIDE x8 or x16 DATA BUS for HIGH
BANDWIDTH SUPPLY VOLTAGE
–VDD = VDDQ = 2.7 to 3.6V for Program,
Erase and Read operations ACCESS TIME Random Read 90ns,110ns Page Mode Read 90ns/25ns, 110ns/25ns PROGRAMMING TIME 16 Word Write Buffer
–12µs Word effective programming time 32 UNIFORM 64 KWord/128KByte MEMORY
BLOCKS ENHANCED SECURITY Block Protection/ Unprotection
–VPEN signal for Program Erase Enable 128 bit Protection Register with 64 bit
Unique Code in OTP area PROGRAM and ERASE SUSPEND 128 bit PROTECTION REGISTER COMMON FLASH INTERFACE 100, 000 PROGRAM/ERASE CYCLES per
BLOCK ELECTRONIC SIGNATURE Manufacturer Code: 0020h Device Code M58LW032D: 0016h PACKAGES Compliant with Lead-Free Soldering
Processes Lead-Free Versions
M58LW032D2/50
TABLE OF CONTENTS
FEATURES SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1Figure 1. Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
SUMMARY DESCRIPTION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5Figure 2. Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Table 1. Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Figure 3. TSOP56 Connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
Figure 4. TBGA64 Connections (Top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
Figure 5. Block Addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
SIGNAL DESCRIPTIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10Address Input (A0). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Address Inputs (A1-A21). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Data Inputs/Outputs (DQ0-DQ15). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Chip Enables (E0, E1, E2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Output Enable (G). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Write Enable (W). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Reset/Power-Down (RP). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Byte/Word Organization Select (BYTE). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Status/(Ready/Busy) (STS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Program/Erase Enable (VPEN). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
VDD Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
VDDQ Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
VSS Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
VSSQ Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Table 2. Device Enable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
BUS OPERATIONS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12Bus Read. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Bus Write. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Output Disable. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Power-Down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Standby . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Table 3. Bus Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
READ MODES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
COMMAND INTERFACE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14Read Memory Array Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Read Electronic Signature Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Read Query Command.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Read Status Register Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Clear Status Register Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Block Erase Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
3/50
M58LW032DWord/Byte Program Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Write to Buffer and Program Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Program/Erase Suspend Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Program/Erase Resume Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Block Protect Command.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Blocks Unprotect Command.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Protection Register Program Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Configure STS Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Table 4. Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Table 5. Configuration Codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Table 6. Read Electronic Signature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
Figure 6. Protection Register Memory Map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
Table 7. Word-Wide Read Protection Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
Table 8. Byte-Wide Read Protection Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
Table 9. Program, Erase Times and Program Erase Endurance Cycles . . . . . . . . . . . . . . . . . . .19
STATUS REGISTER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20Program/Erase Controller Status (SR7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
Erase Suspend Status (SR6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
Erase Status (SR5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
Program Status (SR4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
VPEN Status (SR3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21
Program Suspend Status (SR2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21
Block Protection Status (SR1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21
Reserved (SR0). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21
Table 10. Status Register Bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22
MAXIMUM RATING. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23Table 11. Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23
DC and AC PARAMETERS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24Table 12. Operating and AC Measurement Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24
Figure 7. AC Measurement Input Output Waveform. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24
Figure 8. AC Measurement Load Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24
Table 13. Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24
Table 14. DC Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25
Figure 9. Bus Read AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26
Table 15. Bus Read AC Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26
Figure 10.Page Read AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .27
Table 16. Page Read AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .27
Figure 11.Write AC Waveform, Write Enable Controlled. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28
Table 17. Write AC Characteristics, Write Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28
Figure 12.Write AC Waveforms, Chip Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .29
Table 18. Write AC Characteristics, Chip Enable Controlled. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .29
Figure 13.Reset, Power-Down and Power-Up AC Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30
Table 19. Reset, Power-Down and Power-Up AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . .30
M58LW032D4/50
PACKAGE MECHANICAL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .31Figure 14.TSOP56 - 56 lead Plastic Thin Small Outline, 14 x 20 mm, Package Outline . . . . . . . .31
Table 20. TSOP56 - 56 lead Plastic Thin Small Outline, 14 x 20 mm, Package Mechanical Data.31
Figure 15.TBGA64 - 10x13mm, 8 x 8 ball array 1mm pitch, Package Outline . . . . . . . . . . . . . . . .32
Table 21. TBGA64 - 10x13mm, 8 x 8 ball array, 1 mm pitch, Package Mechanical Data. . . . . . . .32
PART NUMBERING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .33Table 22. Ordering Information Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .33
APPENDIX A.BLOCK ADDRESS TABLE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .34Table 23. Block Addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .34
APPENDIX B.COMMON FLASH INTERFACE - CFI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .35Table 24. Query Structure Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .35
Table 25. CFI - Query Address and Data Output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .35
Table 26. CFI - Device Voltage and Timing Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .36
Table 27. Device Geometry Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .36
Table 28. Block Status Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .37
Table 29. Extended Query information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .37
APPENDIX C.FLOW CHARTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .39Figure 16.Write to Buffer and Program Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . .39
Figure 17.Program Suspend & Resume Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . .40
Figure 18.Erase Flowchart and Pseudo Code. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .41
Figure 19.Erase Suspend & Resume Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . .42
Figure 20.Block Protect Flowchart and Pseudo Code. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .43
Figure 21.Block Unprotect Flowchart and Pseudo Code. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .44
Figure 22.Protection Register Program Flowchart and Pseudo Code. . . . . . . . . . . . . . . . . . . . . . .45
Figure 23.Command Interface and Program Erase Controller Flowchart (a) . . . . . . . . . . . . . . . . .46
Figure 24.Command Interface and Program Erase Controller Flowchart (b) . . . . . . . . . . . . . . . . .47
Figure 25.Command Interface and Program Erase Controller Flowchart (c). . . . . . . . . . . . . . . . . .48
REVISION HISTORY. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .49Table 30. Document Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .49
5/50
M58LW032D
SUMMARY DESCRIPTIONThe M58LW032D is a 32 Mbit (4Mb x 8 or 2Mb
x16) non-volatile memory that can be read, erased
and reprogrammed. These operations can be per-
formed using a single low voltage (2.7V to 3.6V)
core supply.
The memory is divided into 32 blocks of 1Mbit that
can be erased independently so it is possible to
preserve valid data while old data is erased. Pro-
gram and Erase commands are written to the
Command Interface of the memory. An on-chip
Program/Erase Controller simplifies the process of
programming or erasing the memory by taking
care of all of the special operations that are re-
quired to update the memory contents. The end of
a Program or Erase operation can be detected and
any error conditions identified in the Status Regis-
ter. The command set required to control the
memory is consistent with JEDEC standards.
The Write Buffer allows the microprocessor to pro-
gram from 1 to 16 Words in parallel, both speeding
up the programming and freeing up the micropro-
cessor to perform other work. A Word Program
command is available to program a single word.
Erase can be suspended in order to perform either
Read or Program in any other block and then re-
sumed. Program can be suspended to Read data
in any other block and then resumed. Each block
can be programmed and erased over 100,000 cy-
cles.
The M58LW032D has several security features to
increase data protection. Block Protection, where each block can be
individually protected against program or
erase operations. All blocks are protected
during power-up. The protection of the blocks
is non-volatile; after power-up the protection
status of each block is restored to the state
when power was last removed. Program Erase Enable input VPEN, program or
erase operations are not possible when the
Program Erase Enable input VPEN is low. 128 bit Protection Register, divided into two 64
bit segments: the first contains a unique
device number written by ST, the second is
user programmable. The user programmable
segment can be protected.
The Reset/Power-Down pin is used to apply a
Hardware Reset to the enabled memory and to set
the device in power-down mode.
The device features an Auto Low Power mode. If
the bus becomes inactive during read operations,
the device automatically enters Auto Low Power
mode. In this mode the power consumption is re-
duced to the Auto Low Power supply current.
The STS signal is an open drain output that can be
used to identify the Program/Erase Controller sta-
tus. It can be configured in two modes: Ready/
Busy mode where a static signal indicates the sta-
tus of the P/E.C, and Status mode where a pulsing
signal indicates the end of a Program or Block
Erase operation. In Status mode it can be used as
a system interrupt signal, useful for saving CPU
time.
The memory is available in TSOP56 (14 x 20 mm)
and TBGA64 (10x13mm, 1mm pitch) packages.
In addition to the standard version, the packages
are also available in Lead-free version, in compli-
ance with JEDEC Std J-STD-020B, the ST ECO-
PACK 7191395 Specification, and the RoHS
(Restriction of Hazardous Substances) directive.
All packages are compliant with Lead-free solder-
ing processes.
M58LW032D6/50
Table 1. Signal Names
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M58LW032D
M58LW032D
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M58LW032D
M58LW032D
10/50
SIGNAL DESCRIPTIONS
See Figure 2., Logic Diagram, and Table
1., Signal Names, for a brief overview of the sig-
nals connected to this device.
Address Input (A0). The A0 address input is
used to select the higher or lower Byte in X8 mode.
It is not used in X16 mode (where A1 is the Lowest
Significant bit).
Address Inputs (A1-A21). The Address Inputs
are used to select the cells to access in the mem-
ory array during Bus Read operations either to
read or to program data to. During Bus Write oper-
ations they control the commands sent to the
Command Interface of the Program/Erase Con-
troller.
The device must be enabled (refer to Table
2., Device Enable) when selecting the addresses.
The address inputs are latched on the rising edge
of Write Enable or on the first edge of Chip En-
ables E0, E1 or E2 that disable the device, which-
ever occurs first.
Data Inputs/Outputs (DQ0-DQ15). The Data In-
puts/Outputs output the data stored at the selected
address during a Bus Read operation, or are used
to input the data during a program operation. Dur-
ing Bus Write operations they represent the com-
mands sent to the Command Interface of the
Program/Erase Controller. When used to input
data or Write commands they are latched on the
rising edge of Write Enable or the first edge of
Chip Enables E0, E1 or E2 that disable the device,
whichever occurs first.
When the device is enabled and Output Enable is
low, VIL (refer to Table 2., Device Enable), the
data bus outputs data from the memory array, the
Electronic Signature, the Block Protection status,
the CFI Information or the contents of the Status
Register. The data bus is high impedance when
the device is deselected, Output Enable is high,
VIH, or the Reset/Power-Down signal is low, VIL.
When the Program/Erase Controller is active the
Ready/Busy status is given on DQ7.
Chip Enables (E0, E1, E2). The Chip Enable in-
puts E0, E1 and E2 activate the memory control
logic, input buffers, decoders and sense amplifi-
ers. The device is selected at the first edge of Chip
Enables E0, E1 or E2 that enable the device and
deselected at the first edge of Chip Enables E0,
E1 or E2 that disable the device. Refer to Table
2., Device Enable for more details.
When the Chip Enable inputs deselect the memo-
ry, power consumption is reduced to the Standby
level, IDD1.
Output Enable (G). The Output Enable, G, gates
the outputs through the data output buffers during
a read operation. When Output Enable, G, is at VIH
the outputs are high impedance.
Write Enable (W). The Write Enable input, W,
controls writing to the Command Interface, Input
Address and Data latches. Both addresses and
data can be latched on the rising edge of Write En-
able.
Reset/Power-Down (RP). The Reset/Power-
Down pin can be used to apply a Hardware Reset
to the memory.
A Hardware Reset is achieved by holding Reset/
Power-Down Low, VIL, for at least tPLPH. When
Reset/Power-Down is Low, VIL, the Status Regis-
ter information is cleared and the power consump-
tion is reduced to power-down level. The device is
deselected and outputs are high impedance. If Re-
set/Power-Down goes low, VIL,during a Block
Erase, a Write to Buffer and Program or a Block
Protect/Unprotect the operation is aborted and the
data may be corrupted. In this case the STS pin
stays low, VIL, for a maximum timing of tPLPH + tPH-
BH, until the completion of the Reset/Power-Downpulse.
After Reset/Power-Down goes High, VIH, the
memory will be ready for Bus Read and Bus Write
operations after tPHQV. Note that STS does not fall
during a reset, see Ready/Busy Output section.
In an application, it is recommended to associate
Reset/Power-Down pin, RP, with the reset signal
of the microprocessor. Otherwise, if a reset opera-
tion occurs while the memory is performing an
Erase or Program operation, the memory may out-
put the Status Register information instead of be-
ing initialized to the default Asynchronous
Random Read.
Byte/Word Organization Select (BYTE). The
Byte/Word Organization Select pin is used to
switch between the x8 and x16 bus widths of the
memory. When Byte/Word Organization Select is
Low, VIL, the memory is in x8 mode, when it is
High, VIH, the memory is in x16 mode.
Status/(Ready/Busy) (STS). The STS signal is
an open drain output that can be used to identify
the Program/Erase Controller status. It can be
configured in two modes: Ready/Busy - the pin is Low, VOL, during
Program and Erase operations and high
impedance when the memory is ready for any
Read, Program or Erase operation. Status - the pin gives a pulsing signal to
indicate the end of a Program or Block Erase
operation.
After power-up or reset the STS pin is configured
in Ready/Busy mode. The pin can be configured
for Status mode using the Configure STS com-
mand.
11/50
M58LW032D
When the Program/Erase Controller is idle, or sus-
pended, STS can float High through a pull-up re-
sistor. The use of an open-drain output allows the
STS pins from several memories to be connected
to a single pull-up resistor (a Low will indicate that
one, or more, of the memories is busy).
STS is not Low during a reset unless the reset was
applied when the Program/Erase controller was
active.
Program/Erase Enable (VPEN). The Program/
Erase Enable input, VPEN, is used to protect all
blocks, preventing Program and Erase operations
from affecting their data.
Program/Erase Enable must be kept High during
all Program/Erase Controller operations, other-
wise the operations is not guaranteed to succeed
and data may become corrupt.
VDD Supply Voltage. VDD provides the power
supply to the internal core of the memory device.
It is the main power supply for all operations
(Read, Program and Erase).
VDDQ Supply Voltage. VDDQ provides the power
supply to the I/O pins and enables all Outputs to
be powered independently from VDD. VDDQ can be
tied to VDD or can use a separate supply.
It is recommended to power-up and power-down
VDD and VDDQ together to avoid any condition that
would result in data corruption.
VSS Ground. Ground, VSS, is the reference for
the core power supply. It must be connected to the
system ground.
VSSQ Ground. VSSQ ground is the reference for
the input/output circuitry driven by VDDQ. VSSQ
must be connected to VSS.
Note: Each device in a system should have
VDD and VDDQ decoupled with a 0.1µF ceramic
capacitor close to the pin (high frequency, in-
herently low inductance capacitors should be
as close as possible to the package). See Fig-
ure 8., AC Measurement Load Circuit.
Table 2. Device Enable
Note: For single device operations, E2 and E1 can be connected to VSS.
M58LW032D
12/50
BUS OPERATIONS
There are five standard bus operations that control
the memory. Each of these is described in this
section, see Table 3., Bus Operations, for a sum-
mary.
On Power-up or after a Hardware Reset the mem-
ory defaults to Read Array mode (Page Read).
Typically glitches of less than 5ns on Chip Enable
or Write Enable are ignored by the memory and do
not affect bus operations.
Bus Read. Bus Read operations are used to out-
put the contents of the Memory Array, the Elec-
tronic Signature, the Status Register, the Common
Flash Interface and the Block Protection Status.
A valid bus operation involves setting the desired
address on the Address inputs, enabling the de-
vice (refer to Table 2., Device Enable), applying a
Low signal, VIL, to Output Enable and keeping
Write Enable High, VIH. The data read depends on
the previous command written to the memory (see
Command Interface section).
See Figure 9., Bus Read AC Waveforms, and Ta-
ble 15., Bus Read AC Characteristics., for details
of when the output becomes valid.
Bus Write. Bus Write operations write Com-
mands to the memory or latch addresses and input
data to be programmed.
A valid Bus Write operation begins by setting the
desired address on the Address Inputs and en-
abling the device (refer to Chip Enable section).
The Address Inputs are latched by the Command
Interface on the rising edge of Write Enable or the
first edge of E0, E1 or E2 that disables the device
(refer to Table 2., Device Enable).
The Data Input/Outputs are latched by the Com-
mand Interface on the rising edge of Write Enable
or the first edge of E0, E1 or E2 that disables the
device whichever occurs first. Output Enable must
remain High, VIH, during the Bus Write operation.
See Figures 11, and 12, Write AC Waveforms, and
Tables 17 and 18, Write and Chip Enable Con-
trolled Write AC Characteristics, for details of the
timing requirements.
Output Disable. The Data Inputs/Outputs are
high impedance when the Output Enable is at VIH.
Power-Down. The memory is in Power-Down
mode when Reset/Power-Down, RP, is Low. The
power consumption is reduced to the Power-Down
level, IDD2, and the outputs are high impedance,
independent of Chip Enable, Output Enable or
Write Enable.
Standby. Standby disables most of the internal
circuitry, allowing a substantial reduction of the
current consumption. The memory is in standby
when Chip Enable is at VIH. The power consump-
tion is reduced to the standby level IDD1 and the
outputs are set to high impedance, independently
of the Output Enable or Write Enable inputs.
If Chip Enable switches to VIH during a program or
erase operation, the device enters Standby mode
when finished.
Table 3. Bus Operations
Note:1. DQ8-DQ15 are High Z in x8 mode. X = Don’t Care VIL or VIH.
13/50
M58LW032D
READ MODES
Read operations in the M58LW032D are asyn-
chronous. The device outputs the data corre-
sponding to the address latched, that is the
memory array, Status Register, Common Flash In-
terface, Electronic Signature or Block Protection
Status depending on the command issued.
During read operations, if the bus is inactive for a
time equivalent to tAVQV, the device automatically
enters Auto Low Power mode. In this mode the in-
ternal supply current is reduced to the Auto Low
Power supply current, IDD5. The Data Inputs/Out-
puts will still output data if a Bus Read operation is
in progress.
Read operations can be performed in two different
ways, Random Read (where each Bus Read oper-
ation accesses a different Page) and Page Read.
In Page Read mode a Page of data is internally
read and stored in a Page Buffer. Each memory
page is a 4 Words or 8 Bytes and has the same
A3-A21. In x8 mode only A0, A1 and A2 may
change, in x16 mode only A1 and A2 may change.
The first read operation within the Page has the
normal access time (tAVQV), subsequent reads
within the same Page have much shorter access
times (tAVQV1). If the Page changes then the nor-
mal, longer timings apply again.
See Figure 10., Page Read AC Waveforms, and
Table 16., Page Read AC Characteristics, for de-
tails on when the outputs become valid.
M58LW032D
14/50
COMMAND INTERFACE
All Bus Write operations to the memory are inter-
preted by the Command Interface. Commands
consist of one or more sequential Bus Write oper-
ations. The Commands are summarized in Table
4., Commands. Refer to Table 4. in conjunction
with the text descriptions below.
After power-up or a Reset operation the memory
enters Read mode.
Read Memory Array Command. The Read Mem-
ory Array command is used to return the memory
to Read mode. One Bus Write cycle is required to
issue the Read Memory Array command and re-
turn the memory to Read mode. Once the com-
mand is issued the memory remains in Read
mode until another command is issued. From
Read mode Bus Read operations will access the
memory array. After power-up or a reset the mem-
ory defaults to Read Array mode (Page Read).
While the Program/Erase Controller is executing a
Program, Erase, Block Protect, Blocks Unprotect
or Protection Register Program operation the
memory will not accept the Read Memory Array
command until the operation completes.
Read Electronic Signature Command. The Read
Electronic Signature command is used to read the
Manufacturer Code, the Device Code, the Block
Protection Status and the Protection Register.
One Bus Write cycle is required to issue the Read
Electronic Signature command. Once the com-
mand is issued subsequent Bus Read operations
read the Manufacturer Code, the Device Code, the
Block Protection Status or the Protection Register
until another command is issued. Refer to Table
6., Read Electronic Signature, Tables 7 and 8,
Word and Byte-wide Read Protection Register
and Figure 6., Protection Register Memory Map,
for information on the addresses.
Read Query Command. The Read Query Com-
mand is used to read data from the Common Flash
Interface (CFI) Memory Area. One Bus Write cycle
is required to issue the Read Query Command.
Once the command is issued subsequent Bus
Read operations read from the Common Flash In-
terface Memory Area. See APPENDIX B., Tables
24, 25, 26, 27, 28 and 29 for details on the infor-
mation contained in the Common Flash Interface
(CFI) memory area.
Read Status Register Command. The Read Sta-
tus Register command is used to read the Status
Register. One Bus Write cycle is required to issue
the Read Status Register command. Once the
command is issued subsequent Bus Read opera-
tions read the Status Register until another com-
mand is issued.
The Status Register information is present on the
output data bus (DQ1-DQ7) when the device is en-
abled and Output Enable is Low, VIL.
See the section on the Status Register and Table
10. for details on the definitions of the Status Reg-
ister bits
Clear Status Register Command. The Clear Sta-
tus Register command can be used to reset bits
SR1, SR3, SR4 and SR5 in the Status Register to
‘0’. One Bus Write is required to issue the Clear
Status Register command.
The bits in the Status Register are sticky and do
not automatically return to ‘0’ when a new Write to
Buffer and Program, Erase, Block Protect, Block
Unprotect or Protection Register Program com-
mand is issued. If any error occurs then it is essen-
tial to clear any error bits in the Status Register by
issuing the Clear Status Register command before
attempting a new Program, Erase or Resume
command.
Block Erase Command. The Block Erase com-
mand can be used to erase a block. It sets all of
the bits in the block to ‘1’. All previous data in the
block is lost. If the block is protected then the
Erase operation will abort, the data in the block will
not be changed and the Status Register will output
the error.
Two Bus Write operations are required to issue the
command; the second Bus Write cycle latches the
block address and starts the Program/Erase Con-
troller. Once the command is issued subsequent
Bus Read operations read the Status Register.
See the section on the Status Register for details
on the definitions of the Status Register bits.
During the Erase operation the memory will only
accept the Read Status Register command and
the Program/Erase Suspend command. All other
commands will be ignored. Typical Erase times
are given in Table 9.
See APPENDIX C., Figure 18., Erase Flowchart
and Pseudo Code, for a suggested flowchart on
using the Block Erase command.
Word/Byte Program Command. The Word/
Byte Program command is used to program a sin-
gle Word or Byte in the memory array. Two Bus
Write operations are required to issue the com-
mand; the first write cycle sets up the Word Pro-
gram command, the second write cycle latches the
address and data to be programmed, and starts
the Program/Erase Controller.
If the block being programmed is protected an er-
ror will be set in the Status Register and the oper-
ation will abort without affecting the data in the
memory array. The block must be unprotected us-
ing the Blocks Unprotect command or by using the
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M58LW032D
Blocks Temporary Unprotect feature of the Reset/
Power-Down pin, RP.
Write to Buffer and Program Command. The
Write to Buffer and Program command is used to
program the memory array.
Up to 16 Words/32 Bytes can be loaded into the
Write Buffer and programmed into the memory.
Each Write Buffer has the same A5-A21 address-
es. In Byte-wide mode only A0-A4 may change in
Word-wide mode only A1-A4 may change.
Four successive steps are required to issue the
command. One Bus Write operation is required to set up
the Write to Buffer and Program Command.
Issue the set up command with the selected
memory Block Address where the program
operation should occur (any address in the
block where the values will be programmed
can be used). Any Bus Read operations will
start to output the Status Register after the 1st
cycle. Use one Bus Write operation to write the same
block address along with the value N on the
Data Inputs/Output, where N+1 is the number
of Words/Bytes to be programmed. Use N+1 Bus Write operations to load the
address and data for each Word into the Write
Buffer. See the constraints on the address
combinations listed below. The addresses
must have the same A5-A21. Finally, use one Bus Write operation to issue
the final cycle to confirm the command and
start the Program operation.
Invalid address combinations or failing to follow
the correct sequence of Bus Write cycles will set
an error in the Status Register and abort the oper-
ation without affecting the data in the memory ar-
ray. The Status Register should be cleared before
re-issuing the command.
If the block being programmed is protected an er-
ror will be set in the Status Register and the oper-
ation will abort without affecting the data in the
memory array. The block must be unprotected us-
ing the Blocks Unprotect command.
See APPENDIX C., Figure 16., Write to Buffer and
Program Flowchart and Pseudo Code, for a sug-
gested flowchart on using the Write to Buffer and
Program command.
Program/Erase Suspend Command. The Pro-
gram/Erase Suspend command is used to pause a
Word/Byte Program, Write to Buffer and Program
or Erase operation. The command will only be ac-
cepted during a Program or an Erase operation. It
can be issued at any time during an Erase opera-
tion but will only be accepted during a Word Pro-
gram or Write to Buffer and Program command if
the Program/Erase Controller is running.
One Bus Write cycle is required to issue the Pro-
gram/Erase Suspend command and pause the
Program/Erase Controller. Once the command is
issued it is necessary to poll the Program/Erase
Controller Status bit (SR7) to find out when the
Program/Erase Controller has paused; no other
commands will be accepted until the Program/
Erase Controller has paused. After the Program/
Erase Controller has paused, the memory will con-
tinue to output the Status Register until another
command is issued.
During the polling period between issuing the Pro-
gram/Erase Suspend command and the Program/
Erase Controller pausing it is possible for the op-
eration to complete. Once the Program/Erase
Controller Status bit (SR7) indicates that the Pro-
gram/Erase Controller is no longer active, the Pro-
gram Suspend Status bit (SR2) or the Erase
Suspend Status bit (SR6) can be used to deter-
mine if the operation has completed or is suspend-
ed. For timing on the delay between issuing the
Program/Erase Suspend command and the Pro-
gram/Erase Controller pausing see Table 9.
During Program/Erase Suspend the Read Memo-
ry Array, Read Status Register, Read Electronic
Signature, Read Query and Program/Erase Re-
sume commands will be accepted by the Com-
mand Interface. Additionally, if the suspended
operation was Erase then the Write to Buffer and
Program, and the Program Suspend commands
will also be accepted. When a program operation
is completed inside a Block Erase Suspend the
Read Memory Array command must be issued to
reset the device in Read mode, then the Erase Re-
sume command can be issued to complete the
whole sequence. Only the blocks not being erased
may be read or programmed correctly.
See APPENDIX C., Figure 17., Program Suspend
& Resume Flowchart and Pseudo Code, and Fig-
ure 19., Erase Suspend & Resume Flowchart and
Pseudo Code, for suggested flowcharts on using
the Program/Erase Suspend command.
Program/Erase Resume Command. The Pro-
gram/Erase Resume command can be used to re-
start the Program/Erase Controller after a
Program/Erase Suspend operation has paused it.
One Bus Write cycle is required to issue the Pro-
gram/Erase Resume command. Once the com-
mand is issued subsequent Bus Read operations
read the Status Register.
Block Protect Command. The Block Protect
command is used to protect a block and prevent
Program or Erase operations from changing the
data in it. Two Bus Write cycles are required to is-
sue the Block Protect command; the second Bus
Write cycle latches the block address and starts
M58LW032D
16/50
the Program/Erase Controller. Once the command
is issued subsequent Bus Read operations read
the Status Register. See the section on the Status
Register for details on the definitions of the Status
Register bits.
During the Block Protect operation the memory will
only accept the Read Status Register command.
All other commands will be ignored. Typical Block
Protection times are given in Table 9.
The Block Protection bits are non-volatile, once
set they remain set through reset and power-
down/power-up. They are cleared by a Blocks Un-
protect command.
See APPENDIX C., Figure 20., Block Protect
Flowchart and Pseudo Code, for a suggested flow-
chart on using the Block Protect command.
Blocks Unprotect Command. The Blocks Un-
protect command is used to unprotect all of the
blocks. Two Bus Write cycles are required to issue
the Blocks Unprotect command; the second Bus
Write cycle starts the Program/Erase Controller.
Once the command is issued subsequent Bus
Read operations read the Status Register. See the
section on the Status Register for details on the
definitions of the Status Register bits.
During the Block Unprotect operation the memory
will only accept the Read Status Register com-
mand. All other commands will be ignored. Typical
Block Protection times are given in Table 9.
See APPENDIX C., Figure 21., Block Unprotect
Flowchart and Pseudo Code, for a suggested flow-
chart on using the Block Unprotect command.
Protection Register Program Command. The
Protection Register Program command is used to
Program the 64 bit user segment of the Protection
Register. Two write cycles are required to issue
the Protection Register Program command. The first bus cycle sets up the Protection
Register Program command. The second latches the Address and the Data
to be written to the Protection Register and
starts the Program/Erase Controller.
Read operations output the Status Register con-
tent after the programming has started.
The user-programmable segment can be locked
by programming bit 1 of the Protection Register
Lock location to ‘0’ (see Table 7. and Table 8. for
Word-wide and Byte-wide protection addressing).
Bit 0 of the Protection Register Lock location locks
the factory programmed segment and is pro-
grammed to ‘0’ in the factory. The locking of the
Protection Register is not reversible, once the lock
bits are programmed no further changes can be
made to the values stored in the Protection Regis-
ter, see Figure 6., Protection Register Memory
Map. Attempting to program a previously protect-
ed Protection Register will result in a Status Reg-
ister error.
The Protection Register Program cannot be sus-
pended. See APPENDIX C., Figure
22., Protection Register Program Flowchart and
Pseudo Code, for the flowchart for using the Pro-
tection Register Program command.
Configure STS Command.
The Configure STS command is used to configure
the Status/(Ready/Busy) pin. After power-up or re-
set the STS pin is configured in Ready/Busy
mode. The pin can be configured in Status mode
using the Configure STS command (refer to Sta-
tus/(Ready/Busy) section for more details.
Two write cycles are required to issue the Config-
ure STS command. The first bus cycle sets up the Configure STS
command. The second specifies one of the four possible
configurations (refer to Table 5., Configuration
Codes): Ready/Busy mode Pulse on Erase complete mode Pulse on Program complete mode Pulse on Erase or Program complete
mode
The device will not accept the Configure STS com-
mand while the Program/Erase controller is busy
or during Program/Erase Suspend. When STS pin
is pulsing it remains Low for a typical time of
250ns. Any invalid Configuration Code will set an
error in the Status Register.
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M58LW032D
Table 4. Commands
Note:1. X Don’t Care; RA Read Address, RD Read Data, IDA Identifier Address, IDD Identifier Data, SRD Status Register Data, PA Program
Address; PD Program Data, QA Query Address, QD Query Data, BA Any address in the Block, PRA Protection register address,
PRD Protection Register Data, CC Configuration Code. For Identifier addresses and data refer to Table 6., Read Electronic Signature. For Query Address and Data refer to APPENDIX B., COMMON FLASH INTERFACE - CFI.
Table 5. Configuration Codes
Note:1. DQ2-DQ7 are reserved When STS pin is pulsing it remains Low for a typical time of 250ns.
M58LW032D
18/50
19/50
M58LW032D
Table 8. Byte-Wide Read Protection Register
Table 9. Program, Erase Times and Program Erase Endurance Cycles
Note:1. Typical values measured at room temperature and nominal voltages. Sampled, but not 100% tested. Effective byte programming time 6µs, effective word programming time 12µs. Maximum value measured at worst case conditions for both temperature and VDD after 100,000 program/erase cycles. Maximum value measured at worst case conditions for both temperature and VDD.
M58LW032D
20/50
STATUS REGISTER
The Status Register provides information on the
current or previous Program, Erase, Block Protect
or Blocks Unprotect operation. The various bits in
the Status Register convey information and errors
on the operation. They are output on DQ7-DQ0.
To read the Status Register the Read Status Reg-
ister command can be issued. The Status Register
is automatically read after Program, Erase, Block
Protect, Blocks Unprotect and Program/Erase Re-
sume commands. The Status Register can be
read from any address.
The contents of the Status Register can be updat-
ed during an Erase or Program operation by tog-
gling the Output Enable pin or by de-activating and
then reactivating the device (refer to Table
2., Device Enable).
Status Register bits SR5, SR4, SR3 and SR1 are
associated with various error conditions and can
only be reset with the Clear Status Register com-
mand. The Status Register bits are summarized in
Table 10., Status Register Bits. Refer to Table 10.
in conjunction with the following text descriptions.
Program/Erase Controller Status (SR7). The Pro-
gram/Erase Controller Status bit indicates whether
the Program/Erase Controller is active or inactive.
When the Program/Erase Controller Status bit is
Low, VOL, the Program/Erase Controller is active
and all other Status Register bits are High Imped-
ance; when the bit is High, VOH, the Program/
Erase Controller is inactive.
The Program/Erase Controller Status is Low im-
mediately after a Program/Erase Suspend com-
mand is issued until the Program/Erase Controller
pauses. After the Program/Erase Controller paus-
es the bit is High.
During Program, Erase, Block Protect and Blocks
Unprotect operations the Program/Erase Control-
ler Status bit can be polled to find the end of the
operation. The other bits in the Status Register
should not be tested until the Program/Erase Con-
troller completes the operation and the bit is High.
After the Program/Erase Controller completes its
operation the Erase Status, Program Status and
Block Protection Status bits should be tested for
errors.
Erase Suspend Status (SR6). The Erase Sus-
pend Status bit indicates that an Erase operation
has been suspended and is waiting to be re-
sumed. The Erase Suspend Status should only be
considered valid when the Program/Erase Con-
troller Status bit is High (Program/Erase Controller
inactive); after a Program/Erase Suspend com-
mand is issued the memory may still complete the
operation rather than entering the Suspend mode.
When the Erase Suspend Status bit is Low, VOL,
the Program/Erase Controller is active or has com-
pleted its operation; when the bit is High, VOH, a
Program/Erase Suspend command has been is-
sued and the memory is waiting for a Program/
Erase Resume command.
When a Program/Erase Resume command is is-
sued the Erase Suspend Status bit returns Low.
Erase Status (SR5). The Erase Status bit can be
used to identify if the memory has failed to verify
that the block has erased correctly or that all
blocks have been unprotected successfully. The
Erase Status bit should be read once the Program/
Erase Controller Status bit is High (Program/Erase
Controller inactive).
When the Erase Status bit is Low, VOL, the mem-
ory has successfully verified that the block has
erased correctly or all blocks have been unprotect-
ed successfully. When the Erase Status bit is
High, VOH, the erase operation has failed. De-
pending on the cause of the failure other Status
Register bits may also be set to High, VOH. If only the Erase Status bit (SR5) is set High,
VOH, then the Program/Erase Controller has
applied the maximum number of pulses to the
block and still failed to verify that the block has
erased correctly or that all the blocks have
been unprotected successfully. If the failure is due to an erase or blocks
unprotect with VPEN low, VOL, then VPEN
Status bit (SR3) is also set High, VOH. If the failure is due to an erase on a protected
block then Block Protection Status bit (SR1) is
also set High, VOH. If the failure is due to a program or erase
incorrect command sequence then Program
Status bit (SR4) is also set High, VOH.
Once set High, the Erase Status bit can only be re-
set Low by a Clear Status Register command or a
hardware reset. If set High it should be reset be-
fore a new Program or Erase command is issued,
otherwise the new command will appear to fail.
Program Status (SR4). The Program Status bit
is used to identify a Program or Block Protect fail-
ure. The Program Status bit should be read once
the Program/Erase Controller Status bit is High
(Program/Erase Controller inactive).
When the Program Status bit is Low, VOL, the
memory has successfully verified that the Write
Buffer has programmed correctly or the block is
protected. When the Program Status bit is High,
VOH, the program or block protect operation has
failed. Depending on the cause of the failure other
Status Register bits may also be set to High, VOH.
21/50
M58LW032D If only the Program Status bit (SR4) is set
High, VOH, then the Program/Erase Controller
has applied the maximum number of pulses to
the byte and still failed to verify that the Write
Buffer has programmed correctly or that the
Block is protected. If the failure is due to a program or block
protect with VPEN low, VOL, then VPEN Status
bit (SR3) is also set High, VOH. If the failure is due to a program on a protected
block then Block Protection Status bit (SR1) is
also set High, VOH. If the failure is due to a program or erase
incorrect command sequence then Erase
Status bit (SR5) is also set High, VOH.
Once set High, the Program Status bit can only be
reset Low by a Clear Status Register command or
a hardware reset. If set High it should be reset be-
fore a new Program or Erase command is issued,
otherwise the new command will appear to fail.
VPEN Status (SR3). The VPEN Status bit can be
used to identify if a Program, Erase, Block Protec-
tion or Block Unprotection operation has been at-
tempted when VPEN is Low, VIL.
When the VPEN Status bit is Low, VOL, no Pro-
gram, Erase, Block Protection or Block Unprotec-
tion operations have been attempted with VPEN
Low, VIL, since the last Clear Status Register com-
mand, or hardware reset. When the VPEN Status
bit is High, VOH, a Program, Erase, Block Protec-
tion or Block Unprotection operation has been at-
tempted with VPEN Low, VIL.
Once set High, the VPEN Status bit can only be re-
set by a Clear Status Register command or a hard-
ware reset. If set High it should be reset before a
new Program, Erase, Block Protection or Block
Unprotection command is issued, otherwise the
new command will appear to fail.
Program Suspend Status (SR2). The Program
Suspend Status bit indicates that a Program oper-
ation has been suspended and is waiting to be re-
sumed. The Program Suspend Status should only
be considered valid when the Program/Erase
Controller Status bit is High (Program/Erase Con-
troller inactive); after a Program/Erase Suspend
command is issued the memory may still complete
the operation rather than entering the Suspend
mode.
When the Program Suspend Status bit is Low,
VOL, the Program/Erase Controller is active or has
completed its operation; when the bit is High, VOH,
a Program/Erase Suspend command has been is-
sued and the memory is waiting for a Program/
Erase Resume command.
When a Program/Erase Resume command is is-
sued the Program Suspend Status bit returns Low.
Block Protection Status (SR1). The Block Pro-
tection Status bit can be used to identify if a Pro-
gram or Erase operation has tried to modify the
contents of a protected block.
When the Block Protection Status bit is Low, VOL,
no Program or Erase operations have been at-
tempted to protected blocks since the last Clear
Status Register command or hardware reset;
when the Block Protection Status bit is High, VOH,
a Program (Program Status bit SR4 set High) or
Erase (Erase Status bit SR5 set High) operation
has been attempted on a protected block.
Once set High, the Block Protection Status bit can
only be reset Low by a Clear Status Register com-
mand or a hardware reset. If set High it should be
reset before a new Program or Erase command is
issued, otherwise the new command will appear to
fail.
Reserved (SR0). Bit SR0 of the Status Register
is reserved. Its value should be masked.
M58LW032D
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Table 10. Status Register Bits
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M58LW032D
MAXIMUM RATING
Stressing the device above the ratings listed in Ta-
ble 11., Absolute Maximum Ratings, may cause
permanent damage to the device. These are
stress ratings only and operation of the device at
these or any other conditions above those indicat-
ed in the Operating sections of this specification is
not implied. Exposure to Absolute Maximum Rat-
ing conditions for extended periods may affect de-
vice reliability. Refer also to the
STMicroelectronics SURE Program and other rel-
evant quality documents.
Table 11. Absolute Maximum Ratings
Note:1. Compliant with the JEDEC Std J-STD-020B (for small body, Sn-Pb or Pb assembly), the ST ECOPACK® 7191395 specification,
and the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU Maximum one output short-circuited at a time and for no longer than 1 second.
M58LW032D
24/50
DC AND AC PARAMETERS
This section summarizes the operating and mea-
surement conditions, and the DC and AC charac-
teristics of the device. The parameters in the DC
and AC characteristics Tables that follow, are de-
rived from tests performed under the Measure-
ment Conditions summarized in Table
12., Operating and AC Measurement Conditions.
Designers should check that the operating condi-
tions in their circuit match the measurement condi-
tions when relying on the quoted parameters.
Table 12. Operating and AC Measurement Conditions
Table 13. Capacitance
Note:1. TA = 25°C, f = 1 MHz Sampled only, not 100% tested.
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M58LW032D
Table 14. DC Characteristics
