M54HC32K1 ,RAD-HARD QUAD 2-INPUT OR GATEM54HC32RAD-HARD QUAD 2-INPUT OR GATE
M54HC32K1
RAD-HARD QUAD 2-INPUT OR GATE
1/7April 2004 HIGH SPEED:
tPD= 8ns (TYP.)at VCC =6V LOW POWER DISSIPATION:CC =1μA(MAX.)atTA =25°C HIGH NOISE IMMUNITY:NIH =VNIL= 28%VCC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE:
|IOH|= IOL =4mA (MIN) BALANCED PROPAGATION DELAYS:
tPLH≅ tPHL WIDE OPERATING VOLTAGE RANGE:CC (OPR)= 2Vto 6V PIN AND FUNCTION COMPATIBLE WITH SERIES32 SPACE GRADE-1: ESA SCC QUALIFIED 50 krad QUALIFIED, 100 krad AVAILABLE ON
REQUEST NO SEL UNDER HIGH LET HEAVY IONS
IRRADIATION DEVICE FULLY COMPLIANT WITH
SCC-9201-111
DESCRIPTIONThe M54HC32is anhighspeed CMOS QUAD
2-INPUT OR GATE fabricated with silicon gate2 MOS technology.
The internal circuitis composed of2 stages
including buffer output, which enables high noise
immunity and stable output.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
M54HC32RAD-HARD QUAD 2-INPUT OR GATE
PIN CONNECTION
ORDER CODES
M54HC322/7
IEC LOGIC SYMBOLS
INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGSAbsoluteMaximum Ratingsare those values beyond which damagetothe device mayoccur.Functional operation under these conditionsis
not implied
M54HC32
RECOMMENDED OPERATING CONDITIONS SPECIFICATIONS ELECTRICAL CHARACTERISTICS(CL=50 pF, Inputtr=tf =6ns)
M54HC324/7
CAPACITIVE CHARACTERISTICS CPD isdefinedasthe valueofthe IC’s internal equivalent capacitance whichis calculatedfrom theoperating current consumption without
load.(Referto Test Circuit). Averageoperatingcurrentcan beobtained bythefollowingequation. ICC(opr) =CPD xVCC xfIN +ICC/4 (per gate)
TEST CIRCUIT= 50pFor equivalent (includesjig and probe capacitance) =ZOUTof pulse generator (typically 50Ω)
WAVEFORM: PROPAGATION DELAY TIME (f=1MHz; 50% duty cycle)
