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M36DR432AD10ZA6T from ST,ST Microelectronics

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23.438ms

M36DR432AD10ZA6T

Manufacturer: ST

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

Partnumber Manufacturer Quantity Availability
M36DR432AD10ZA6T ST 370 In Stock

Description and Introduction

32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product The part **M36DR432AD10ZA6T** is a **512Mb (32Mx16) 3.3V Pseudo Static RAM (PSRAM)** manufactured by **STMicroelectronics (ST)**.  

### **Key Specifications:**  
- **Density:** 512Mb (32M words × 16 bits)  
- **Voltage Supply:** 3.3V (±10%)  
- **Interface:** Parallel  
- **Organization:** 32M × 16  
- **Access Time:** 70ns  
- **Operating Temperature Range:** Industrial (-40°C to +85°C)  
- **Package:** 54-ball FBGA (Fine-pitch Ball Grid Array)  

### **Features:**  
- **Pseudo Static RAM (PSRAM):** Combines DRAM memory cells with an SRAM-like interface.  
- **Self-Refresh:** Built-in refresh circuitry eliminates the need for external refresh control.  
- **Low Power Consumption:** Suitable for battery-powered applications.  
- **Asynchronous Operation:** No clock signal required for read/write operations.  
- **Industrial-Grade:** Designed for harsh environments.  

This PSRAM is commonly used in embedded systems, industrial applications, and consumer electronics where high-density, low-power memory is required.  

Would you like additional details on pin configurations or timing characteristics?

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