8 MBIT (1MB X8 OR 512KB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY The **M29W800DT** is a Flash memory device manufactured by **STMicroelectronics (ST)**. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:
### **Manufacturer:**
- **STMicroelectronics (ST)**
### **Specifications:**
- **Memory Type:** Flash
- **Memory Format:** NOR
- **Technology:** 0.18µm CMOS
- **Density:** 8 Mbit (1M x 8-bit or 512K x 16-bit)
- **Supply Voltage:**
- **VCC (Core):** 2.7V to 3.6V
- **VPP (Programming Voltage):** 9V (optional for faster programming)
- **Access Time:**
- **70 ns (max) for x16 mode**
- **90 ns (max) for x8 mode**
- **Operating Temperature Range:**
- **Industrial (-40°C to +85°C)**
- **Package:**
- **TSOP48 (Top or Bottom Boot Block options available)**
### **Descriptions:**
- The **M29W800DT** is a **bottom boot block** Flash memory device, meaning the boot sectors are located at the lower memory addresses.
- It supports both **8-bit and 16-bit data bus configurations** for flexible system integration.
- The device is designed for **high-performance embedded applications** requiring reliable non-volatile storage.
### **Features:**
- **Sector Architecture:**
- **16 uniform 64 KB sectors** (for x16 mode)
- **15 uniform 64 KB sectors + 8 smaller 4 KB/8 KB sectors** (for x8 mode)
- **Command User Interface (CUI):**
- Compatible with **JEDEC standards** for Flash memory.
- **Programming & Erase:**
- **Byte/Word Program (10 µs typical)**
- **Sector Erase (0.7s typical per sector)**
- **Chip Erase (15s typical)**
- **Hardware Protection:**
- **VPP pin for write protection**
- **Block locking mechanism**
- **Low Power Consumption:**
- **Standby current:** 1 µA (typical)
- **Active read current:** 10 mA (typical)
- **Reliability:**
- **100,000 erase/program cycles per sector**
- **20-year data retention**
This information is based on the official STMicroelectronics datasheet for the **M29W800DT** Flash memory device.
