8 MBIT (1MB X8 OR 512KB X16, BOOT BLOCK) LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY The **M29W800AB** is a Flash memory device manufactured by **STMicroelectronics (ST)**. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:
### **Manufacturer:**
STMicroelectronics (ST)
### **Description:**
The M29W800AB is a **16 Mbit (2M x 8 or 1M x 16) Flash memory** device with a **Uniform Sector Architecture**. It is designed for embedded systems requiring reliable non-volatile storage.
### **Key Features:**
- **Memory Organization:**
- **2,097,152 x 8 bits** or **1,048,576 x 16 bits**
- **Supply Voltage:**
- **2.7V to 3.6V** for read, program, and erase operations
- **Access Time:**
- **70 ns, 90 ns, 120 ns** (depending on speed grade)
- **Sector Architecture:**
- **Uniform 16 KB sectors** (total of 64 sectors)
- **Programming & Erase:**
- **Byte/Word Programming** (typical 9 µs per byte/word)
- **Sector Erase** (typical 0.7 s per sector)
- **Chip Erase** (optional)
- **Endurance:**
- **100,000 Program/Erase cycles** per sector (minimum)
- **Data Retention:**
- **20 years** (minimum)
- **Interface:**
- **Asynchronous** (CE#, OE#, WE# control signals)
- **Compatible with JEDEC standards**
- **Package Options:**
- **TSOP48 (12x20mm)**
- **SO44 (PLCC44)**
- **Operating Temperature Range:**
- **Industrial (-40°C to +85°C)**
### **Additional Features:**
- **Low Power Consumption:**
- **Standby current:** 1 µA (typical)
- **Active read current:** 15 mA (typical)
- **Hardware & Software Protection:**
- **Block locking** for secure data
- **Temporary Sector Unprotect** for flexible updates
- **Embedded Algorithms:**
- **Auto-Erase & Auto-Program** for simplified operation
This information is based on the official STMicroelectronics datasheet for the **M29W800AB** Flash memory device.
