M28F512-12C1 ,512 Kbit (64Kb x8 Bulk Erase)Flasxh MemoryLogic Diagram
VCC VPP
DQO-DQ7
M28F512
AIODMBB
August 1 998
1/20M28F512
Figure ..
M28R400CB ,4 MBIT (256KB X16, BOOT BLOCK) 1.8V SUPPLY FLASH MEMORYAbsolute Maximum Ratings . . . . . . . 19DC and AC PARAMETERS . 20Table 12. Operating an ..
M28R400CB120ZB6T ,4 MBIT (256KB X16, BOOT BLOCK) 1.8V SUPPLY FLASH MEMORYLogic Diagram . . 5Table 1. Signal Names . . 5Figure 3. TFBGA Connections (Top view t ..
M28S-D , NPN Silicon Plastic-Encapsulate Transistor
M28W160BB-90N6 ,16 MBIT (1MB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORYAbsolute Maximum Ratings...... ...... ....... ...... ....... ...... ...... ....18DCand AC PARAMETER ..
M28W160BT ,16 Mbit (1Mb x16, Boot Block) Low Voltage Flash MemoryTABLE OF CONTENTSSUMMARY DESCRIPTION... ...... ....... ...... ....... ...... ....... ...... ...... ..
M4N26 ,6-Pin DIP Optoisolators Transistor Output
M4N37 ,6-Pin DIP Optoisolators Transistor Output
M4T28-BR12SH ,TIMEKEEPER SNAPHAT Battery & CrystalAbsolute Maximum Ratings . 7DC and AC PARAMETERS . . 8Table 3. DC and AC Measurement Co ..
M4T28-BR12SH1 ,TIMEKEEPER SNAPHAT (BATTERY & CRYSTAL)M4T28-BR12SHM4T32-BR12SH® ®TIMEKEEPER SNAPHAT (Battery & Crystal)
M4T32-BR12SH1 ,TIMEKEEPER SNAPHAT (BATTERY & CRYSTAL)Logic Diagram Table 1. Signal NamesX1 Crystal InputX2 Crystal OutputX1 X2V Negative VoltageBAT–V Po ..
M4T32-BR12SH6 ,TIMEKEEPER SNAPHAT (BATTERY & CRYSTAL)TABLE OF CONTENTSSUMMARY DESCRIPTION... ...... ....... ...... ....... ...... ....... ...... ...... ..
M28F512-12C1
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory
ge7gi,'
M28F512
512 Kbit (64Kb x8, Bulk Erase) Flash Memory
I 5V i10% SUPPLY VOLTAGE
I 12V PROGRAMMING VOLTAGE
u FAST ACCESS TIME 90ns
u BYTE PROGRAMING TIME 10ps typical
n ELECTRICAL CHIP ERASE In Is RANGE
II LOW POWER CONSUMPTION
- Stand-by Current SHA typical
a 10,000 ERASE/PROGRAM CYCLES
n INTEGRATED ERASE/PROGRAM-STOP
n 20 YEARS DATA RETENTION
- Detectwtty below 1ppm/year
u ELECTRONIC SIGNATURE
- ManufacturerCode 20h
- Device Code 02h
DESCRIPTION
The M28F512 Flash memory IS a non-volatlle
memory that may be erased electrically at the Chip
level and programmed by byte It IS organised as
64 Kbytes of 8 bits. It uses a command reglster
architecture to select the operating modes and thus
prowdes a simple microprocessor interface. The
device IS offered In PDIP32 and PLCC32 pack-
Table 1. Signal Names
PLCC32 (C)
PDIP32 (B)
Figure 1. Logic Diagram
AO-AI 5 Address Inputs
DQ0-DO7 Data Inputs / Outputs
E Chp Enable
5 Output Enable
Tii Write Enable
We Program Supply
Vcc Supply Voltage
Vss Ground
VCC VPP
A0-A15
M28F512
It: tire;
AIODMBB
August 1998
M28F512
Figure 2A. DIP Pin Connections
Figure 2B. LCC Pin Connections
VPPE1 V 32 JVCC
NC[2 311W
A15[3 30 INC
A12[ 4 29 1A14
A7[5 28]A13
A6[ 6 27 1A8
ASE 7 26 1Ag
A4t 8 25]A11
AM 9 M28F512 2410
A2[10 23 1A10
A1[11 22IE
A0t 12 213007
000[13 201006
001[14 191005
002[15 18 ID04
Vss[16 17 JDO3
Al00549
$3 £9 co k 8 0
<1: < a > S'lt a
Az 5AM
ASE ilA13
Ast 1A8
A4[ jA9
A3[ 9 M28F512 25 1A11
A2[ 16
Alt 1A10
AOE JE
DQO[ ]DQ7
$.-.gL-Ib-hh-rh-rh-TI.-I
M- N (DOD V LO (0
o 0 mo 0 c o
o a > o o o a
Al00550
Warning: NC = Not Connected
Table 2. Absolute Maximum Ratings
Warning: NC = Not Connected
Symbol Parameter Value Unit
TA Ambient Operating Temperature (4) -40 to 125 °C
TEAS Temperature Under Bas -50 to 125 °C
Tsm Storage Temperature -65 to 150 °C
v.0 (2, 3) Input or Output Voltages -0 6 to Vcc + o 5 v
Vcc Supply Voltage M) 6 to 7 V
V(A9, F (2) A9, F175 Voltage -0 6 to 13 5 v
VPP (2) t','rrpgpa,e,'et Voltage, dunng Erase A) 6 to 14 V
Notes 1 Except tor the ratmg 'Operatlng Temperature Range", stresses above those lated 1n the Table "Absolute Maximum Ratlngs"
may cause permanent damage to the deVIce These are stress ratlngs only and operation of the device at these or any other
conditions above those Indicated 1n the Operating sections of thls spetafcation IS not implied Exposure to Absolute Max1mum
Rattng conditions for extended penods may affect dewce reliablllty Refer also to the STMicroelectronics SURE Program and
other relevant quality documents
Depends on range
DEVICE OPERATION
The M28F512 Flash memory employs a technol-
ogy SImIIar to a 512Kb EPROM but adds to the
device functionality by prov1d1ng electncal erasure
and programming These functions are managed
by a command register The functions that are
addressed we the command register depend on
Mlnlmum Voltage may undershoot to -4N dunng transmon and for less than 20ns
Maximum Voltage may overshoot to 7V dunng transmon and for less than 20ns
the voltage applied to the Wp, program voltage,
Input When Vpp IS less than or equal to 6 5V, the
command register IS disabled and M28F512 func-
ttons as a read only memory providing operating
modes sumllar to an EPROM (Read, Output DIS-
able, Electronic Signature Read and Standby)
When Vpp IS raised to 12V the command regsnter
IS enabled and this provides, 1n addmon, Erase and
Program operations
