M27W800-100K6 ,8 MBIT (1MB X 8 OR 512KB X 16) LOW VOLTAGE UV EPROM AND OTP EPROMAbsolute Maximum Ratings" maycause permanent damage to the device. These are stress ratings only an ..
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M28C16-150N6T ,16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTIONLogic DiagramDESCRIPTIONThe M28C16 is a 2K x 8 low power ParallelEEPROM fabricatedwith SGS-THOMSON ..
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M48T59Y-70PC1 ,64 Kbit (8Kb X8) TIMEKEEPER SRAMM48T59M48T59Y, M48T59V*®5.0 or 3.3V, 64 Kbit (8 Kbit x8) TIMEKEEPER SRAM
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M48T86 ,5 VOLT PC REAL TIME CLOCKAbsolute Maximum Ratings(Table2.) .... ...... ....... ...... ....... ...... ...... .....6DC AND AC ..
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M27W800-100K6
8 MBIT (1MB X 8 OR 512KB X 16) LOW VOLTAGE UV EPROM AND OTP EPROM
1/15March 2000
M27W8008 Mbit (1Mb x 8 or 512Kb x 16)
Low Voltage UV EPROM and OTP EPROM 2.7V to 3.6V LOW VOLTAGE in READ
OPERATION ACCESS TIME:
–90ns at VCC = 3.0V to 3.6V 100ns at VCC = 2.7V to 3.6V BYTE-WIDE or WORD-WIDE
CONFIGURABLE 8 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION Active Current 30mA at 8MHz Standby Current 15μA PROGRAMMING VOLTAGE: 12.5V ± 0.25V PROGRAMMING TIME: 50μs/word ELECTRONIC SIGNATURE Manufacturer Code: 20h Device Code: B2h
DESCRIPTIONThe M27W800 is a low voltage 8 Mbit EPROM of-
fered in the two ranges UV (ultra violet erase) and
OTP (one time programmable). It is ideally suited
for microprocessor systems requiring large data or
program storage. It is organised as either 1 Mbit
words of 8 bit or 512 Kbit words of 16 bit. The pin-
out is compatible with a 8 Mbit Mask ROM.
The M27W800 operates in the read mode with a
supply voltage as low as 2.7V. The decrease in
operating power allows either a reduction of the
size of the battery or an increase in the time be-
tween battery recharges.
The FDIP42W (window ceramic frit-seal package)
has a transparent lid which allows the user to ex-
pose the chip to ultraviolet light to erase the bit pat-
tern. A new pattern can then be written rapidly to
the device by following the programming proce-
dure.
For applications where the content is programmed
only one time and erasure is not required, the
M27W800 is offered in PDIP42 and PLCC44 pack-
age.
M27W800
Table 1. Signal Names
DEVICE OPERATIONThe operating modes of the M27W800 are listed in
the Operating Modes Table. A single power supply
is required in the read mode. All inputs are TTL
compatible except for VPP and 12V on A9 for the
Electronic Signature.
Read ModeThe M27W800 has two organisations, Word-wide
and Byte-wide. The organisation is selected by the
signal level on the BYTEVPP pin. When BYTEVPP
is at VIH the Word-wide organisation is selected
and the Q15A–1 pin is used for Q15 Data Output.
When the BYTEVPP pin is at VIL the Byte-wide or-
ganisation is selected and the Q15A–1 pin is used
for the Address Input A–1. When the memory is
logically regarded as 16 bit wide, but read in the
Byte-wide organisation, then with A–1 at VIL the
lower 8 bits of the 16 bit data are selected and with
A–1 at VIH the upper 8 bits of the 16 bit data are
selected.
The M27W800 has two control functions, both of
which must be logically active in order to obtain
data at the outputs. In addition the Word-wide or
Byte-wide organisation must be selected.
Chip Enable (E) is the power control and should be
used for device selection. Output Enable (G) is the
output control and should be used to gate data to
the output pins independent of device selection.
Assuming that the addresses are stable, the ad-
dress access time (tAVQV) is equal to the delay
from E to output (tELQV). Data is available at the
output after a delay of tGLQV from the falling edge
of G, assuming that E has been low and the ad-
dresses have been stable for at least tAVQV-tGLQV.
3/15
M27W800
Table 2. Absolute Maximum Ratings (1)Note:1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi-
tions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant qual-
ity documents. Minimum DC voltage on Input or Output is –0.5V with possible undershoot to –2.0V for a period less than 20ns. Maximum DC
voltage on Output is VCC +0.5V with possible overshoot to VCC +2V for a period less than 20ns. Depends on range.
Table 3. Operating ModesNote: X = VIH or VIL, VID = 12V ± 0.5V.
Table 4. Electronic Signature
M27W800
Table 5. AC Measurement Conditions
Table 6. Capacitance (1) (TA = 25 °C, f = 1 MHz)
Note:1. Sampled only, not 100% tested.
5/15
M27W800
Table 7. Read Mode DC Characteristics (1)(TA = –40 to 85 °C; VCC = 2.7 to 3.6V; VPP = VCC)
Note:1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP. Maximum DC voltage on Output is VCC +0.5V.
Standby Mode The M27W800 has a standby mode which reduc-
es the supply current from 20mA to 20μA with low
voltage operation VCC ≤ 3.6V, see Read Mode DC
Characteristics table for details.The M27W800 is
placed in the standby mode by applying a CMOS
high signal to the E input. When in the standby
mode, the outputs are in a high impedance state,
independent of the G input.
Two Line Output Control Because EPROMs are usually used in larger
memory arrays, this product features a 2 line con-
trol function which accommodates the use of mul-
tiple memory connection. The two line control
function allows: the lowest possible memory power dissipation, complete assurance that output bus contention
will not occur.
For the most efficient use of these two control
lines, E should be decoded and used as the prima-
ry device selecting function, while G should be
made a common connection to all devices in the
array and connected to the READ line from the
system control bus. This ensures that all deselect-
ed memory devices are in their low power standby
mode and that the output pins are only active
when data is required from a particular memory
device.
System ConsiderationsThe power switching characteristics of Advanced
CMOS EPROMs require careful decoupling of the
supplies to the devices. The supply current ICC
has three segments of importance to the system
designer: the standby current, the active current
and the transient peaks that are produced by the
falling and rising edges of E. The magnitude of the
transient current peaks is dependent on the ca-
pacitive and inductive loading of the device out-
puts. The associated transient voltage peaks can
be suppressed by complying with the two line out-
put control and by properly selected decoupling
capacitors. It is recommended that a 0.1μF ceram-
ic capacitor is used on every device between VCC
and VSS. This should be a high frequency type of
low inherent inductance and should be placed as
close as possible to the device. In addition, a
4.7μF electrolytic capacitor should be used be-
tween VCC and VSS for every eight devices. This
capacitor should be mounted near the power sup-
ply connection point. The purpose of this capacitor
is to overcome the voltage drop caused by the in-
ductive effects of PCB traces.
M27W800
Table 8. Read Mode AC Characteristics (1)(TA = –40 to 85 °C; VCC = 2.7 to 3.6V; VPP = VCC)
Note:1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP Sampled only, not 100% tested. Speed obtained with High Speed measurement conditions.
7/15
M27W800
M27W800
Table 9. Programming Mode DC Characteristics (1)(TA = 25 °C; VCC = 6.25V ± 0.25V; VPP = 12.5V ± 0.25V)
Note:1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
Table 10. Programming Mode AC Characteristics (1)TA = 25 °C; VCC = 6.25V ± 0.25V; VPP = 12.5V ± 0.25V)
Note:1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP. Sampled only, not 100% tested.
Programming The M27W800 has been designed to be fully com-
patible with the M27C800 and has the same elec-
tronic signature. As a result the M27W800 can be
programmed as the M27C800 on the same pro-
gramming equipments applying 12.75V on VPP
and 6.25V on VCC by the use of the same PRES-
TO III algorithm. When delivered (and after each
erasure for UV EPROM), all bits of the M27W800
are in the ’1’ state. Data is introduced by selective-
ly programming ’0’s into the desired bit locations.
Although only ’0’s will be programmed, both ’1’s
and ’0’s can be present in the data word. The only
way to change a ’0’ to a ’1’ is by die exposure to ul-
traviolet light (UV EPROM). The M27W800 is in
the programming mode when VPP input is at
12.5V, G is at VIH and E is pulsed to VIL. The data
to be programmed is applied to 16 bits in parallel
to the data output pins. The levels required for the
address and data inputs are TTL. VCC is specified
to be 6.25V ± 0.25V.
